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At least 415 records · Page 23

XES studies of density of states of high temperature superconductors

X-ray emission spectroscopic studies concerning the superconducting crystals, thin films and ceramics of the Y-Ba-Cu-O, Tm-Ba-Cu-O, Bi-Sr-Ca-Cu-O, Bi-Pb-Sr-Ca-Cu-O and T1-Ba-Ca-Cu-O types are presented. The contributions of the 13d(9)L, 13d(10)L, 13d(10)LL and 13d(10)L(2) configurations, where L denotes a ligand hole at the oxygen orbitals in the spectroscopic pattern of these superconductors are discussed. An attempt to connect the x-ray 'as registered' Cu L emission spectra with the density of states close to the Fermi level, considering an influence of the CuL3 absorption edge, is presented. The corrected intensity distributions below the Fermi level are found to correspond to the theoretical density of states. Furthermore, an approach to the average valence of copper based on the account of the self-absorption and fluorescence effects and on the configurations listed above is shown. The average valence of copper in the materials investigated is estimated to lie in the range of +2.10 to 2.32 when the formal trivalent copper is considered as that characterized by the 13d(9)L configuration. The density of states at the Fermi level was estimated to be 2.4 states/eV-cell for a Bi-Sr-Ca-Cu-O crystal and 3.6 states/eV-cell for a Tl-Ba-Ca-Cu-O ceramic.

Jasiolek, Gabriel↗

XES studies of density of states of high temperature superconductors

X-ray emission spectroscopic studies concerning the superconducting crystals, thin films, and ceramics of the Y-Ba-Cu-O, Tm-Ba-Cu-O, Bi-Sr-Ca-Cu-O, Bi-Pb-Sr-Ca-Cu-O, and Tl-Ba-Ca-Cu-O types are presented. The contributions of the 13d(9)L, 13d(10)L, 13d(10)LL, and 13d(10)L(2) configurations, where L denotes a ligand hole at the oxygen orbitals in the spectroscopic pattern of these superconductors are discussed. An attempt to connect the x-ray 'as registered' Cu L(alpha) emission spectra with the density of states close to the Fermi level, considering an influence of the CuL3 absorption edge, is presented. The corrected intensity distributions below the Fermi level are found to correspond to the theoretical density of states. Furthermore, an approach to the average valence of copper basing on the account of the self-absorption and fluorescence effects and on the configurations listed above is shown. The average valence of copper in the materials investigated is estimated to lie in the range of +2.10 to 2.32 when the formal trivalent copper is considered as that characterized by the 13d(9)L configuration. The density of states at the Fermi level was estimated to be 2.4 states/eV-cell for a Bi-Sr-Ca-Cu-O crystal and 3.6 states/eV-cell for a Tl-Ba-Ca-CU-O ceramic.

Jasiolek, Gabriel↗

Modulating the Electronic Transport of 2D Sb2Te3 Nanoplates by Coinage Metal Intercalation

Thermoelectric materials are particularly relevant to the current energy infrastructure and demands of the 21st century, converting waste heat into usable electricity. The solution intercalation of zerovalent copper into Sb2Te3 nanoplates, a well-established thermoelectric material, is reported. The copper intercalant is homogeneously distributed throughout the nanoplates, confirmed by scanning transmission electron microscopy coupled with energy-dispersive X-ray spectroscopy. The copper composition was shown to be 6 at. % by X-ray photoelectron spectroscopy. Copper ordering within the van der Waals gaps of the nanoplates is confirmed by selected area electron diffraction. Fabrication and thermoelectric property measurements of single-crystal Sb2Te3 and Cu-Sb2Te3 nanoplate devices show effective modulation of electrical conductivity and Seebeck coefficient with Cu intercalation. X-ray photoelectron spectroscopic studies in the valence-band region reveal additional electronic states from copper that appear near the Fermi energy, postulated to act as electron acceptors, leading to modulation of the electronic transport properties.

2D nanoplates↗

Aliovalent gallium dopants remove Ti 3+ defects and improve photocatalytic and photoelectrochemical water oxidation properties of LaTiO 2 N

LaTiO 2 N is a promising semiconductor for the water splitting reaction due to its 2.1 eV band gap and stability against corrosion. However, its solar energy conversion is limited by Ti 3+ recombination defects introduced during ammonolysis. Here we show for the first time that Ti 3+ defects in LaTiO 2 N can be suppressed with incorporation of 2, 5, and 10% aliovalent gallium (Ga 3+ ) dopants during synthesis via the layered La 2 Ti 2 O 7 intermediate. Electron paramagnetic resonance (EPR) spectroscopy on the solid powders confirms a reduction in the Ti 3+ donor density from 2.97 × 10 17 cm −3 for the non-doped material to ∼6.24 × 10 16 cm −3 for 5% Ga-doped LaTiO 2 N. The remaining Ti 3+ defects are concentrated near the LaTiO 2 N surface, according to X-ray photoelectron spectroscopy. The defect reduction shifts the optical absorption edge from 2.02 to 2.09 eV and eliminates a broad absorption band at 1050 nm from the optical absorption spectra. It also removes a 1.0–1.7 eV sub-band gap photovoltage signal from surface photovoltage spectra. This suggests that empty Ti 3+ d-orbitals are located 1.0–1.7 eV above the LaTiO 2 N valence band edge. Removing these recombination states with increasing Ga 3+ content enhances the photoconversion efficiency of LaTiO 2 N during water oxidation. The optimized 2 wt% CoO x -loaded 5% Ga-doped LaTi O2 N material has a 16% AQE (400 nm) for O 2 production from aqueous silver nitrate solution and a ∼2.1 mA cm −2 water oxidation photocurrent at 1.23 V under 100 mW cm −2 Xe arc lamp illumination. The water oxidation photocurrent is stable during a 50 min test, and the Faraday efficiency for O 2 generation is 97%, confirming short-term corrosion stability of LaTiO 2 N. Altogether, these results provide a better understanding of the distribution, concentration, and impact of Ti 3+ defects on the optical, photovoltage, and photoelectrochemical properties of LaTiO 2 N. In combination with other defect control strategies, aliovalent Ga 3+ doping can help bring the solar energy conversion efficiency of LaTiO 2 N closer to the theoretical limit.

Wang, Li [University of California, Davis, CA (Uni↗

A linear surrogate for optimising functions of an orthogonal matrix with applications in wave function theory

The technique of surrogate optimisation is to use a simpler function to approximate a complex function that is time-consuming to evaluate. Here we show that the maximum of a special type of surrogate function f(U)=Tr(AU),UϵO(n) is at A T (AA T ) 1/2 , and that there is one and only one local maximum both in SO(n) and O(n)–SO(n). This function f(U) has been found to be useful in various aspects of electronic structure theory, including proving the Carlson-Keller theorem, and localising orbitals. As one other example, we apply it here to optimise the ground state of molecules using the Generalised Valence Bond wavefunction.

74 ATOMIC AND MOLECULAR PHYSICS↗

Effects of spin-orbit coupling and very large supercells on the description of acceptors in CdTe

Predicting accurate shallow donor and acceptor levels in semiconductors has been quite challenging using periodic boundary conditions as implemented in current density functional theory codes. The reason is that the wave functions associated with the shallow centers are quite extended and are not fully contained in the supercell (typically with a few hundred atoms) so impurities in the periodically repeated image cells interact with each other. Errors of ~0.1 eV are expected, and these are of the same order of magnitude as the ionization energies themselves. In the case of acceptors in CdTe, this problem is exacerbated by the strong spin-orbit coupling that split the Te-related states at the top of the valence band, making the calculations at least 8 times more expensive. CdTe is an important solar-cell material with record high efficiency of 22%. One of the main limiting factors to increasing the efficiency towards the theoretical limit of ~30% is the often reported very low hole concentration. Pushing to the limit of computational capability by using very large supercells with spin-orbit coupling we report the results of hybrid functional calculations of group-V acceptors in CdTe. We show that extrapolation to the dilute limit leads to an interpretation of the experimental data that is qualitatively different from previous DFT and hybrid functional calculation reports. We find that the group-V impurities indeed behave as shallow acceptors and that the corresponding compensating AX-centers are unstable and do not limit p-type doping. We address the differences between our results and previous theoretical predictions and show that our calculated ionization energies predict hole concentrations that are in excellent agreement with recent temperature-dependent Hall measurements on high-quality single-crystal samples.

14 SOLAR ENERGY↗

Evolution of ion emission yield of alloys with the nature of the solute. 2: Interpretation

Solid solutions of transition elements in copper, nickel, cobalt, iron, and aluminum matrices were analyzed by observing secondary ion emissions under bombardment with 6.2-keV argon ions. Enchancement of the production of solute-element ions was observed. An ion emission model is proposed according to which the ion yield is governed by the probability of an atom leaving the metal in a preionized state. The energy distribution of the valence electrons of the solute atoms is the bases of the probability calculation.

Blaise, G.↗

Strained-layer InGaAs/GaAs/AlGaAs single quantum well lasers with high internal quantum efficiency

Low threshold current density strained-layer In(0.2)Ga(0.8)As/GaAs/AlGaAs single quantum well lasers, emitting at 980 nm, have been grown by molecular beam epitaxy. Contrary to what has been reported for broad-area lasers with pseudomorphic InGaAs active layers grown by metalorganic chemical vapor deposition, these layers exhibit a high internal quantum efficiency (about 90 percent). The maximum external differential quantum efficiency is 70 percent, limited by an anomalously high internal loss possibly caused by a large lateral spreading of the optical mode. In addition, experimental results supporting the theoretically predicted strain-induced reduction of the valence-band nonparabolicity and density of states are presented.

Larsson, Anders↗

Structure and superconductivity in (Bi(0.35)Cu(0.65))Sr2YCu2O7 and related materials

The recently reported (Bi/Cu)Sr2YCu2O7 phase has been studied by time of flight powder neutron diffraction. The proposed 1212 structure has been confirmed and refinements have shown the oxygen in the (Bi/Cu)O layer is displaced by 0.78 A from the ideal (1/2,1/2,0) site (P4/mmm space group) along /100/. Bond Valence Sum calculations have suggested oxidation states of Bi(5+) and Cu(2+) for the cations in the (Bi/Cu)O layers. The material is non-superconducting and all attempts to induce superconductivity have been unsuccessful. Work on the related material (Ce/Cu)Sr2YCu2O7 has shown the ideal Ce content to be 0.5 Ce per formula unit. The introduction of Ba (10%) onto the Sr site dramatically increases phase stability and also induces superconductivity (62 K).

Jennings, R. A.↗

Spatially Resolved Investigation of Mixed Valence and Insulator-to-Metal Transition in an Organic Salt

Using scanning tunneling microscopy/spectroscopy (STM/STS), we investigate the evolution of electronic structures across the boundaries of 7,7,8,8-tetracyanoquinodimethane (TCNQ) and K-TCNQ assemblies on a weakly interacting substrate. Despite the semiconducting/insulating nature of TCNQ (TCNQ 0 ) and K-TCNQ (TCNQ -1 ), a continuum metallic-like density of states extending deep (~1.5 nm) into the TCNQ assembly is observed near domain boundary. We attribute the formation of these states to the abrupt change of molecular valence, which perturbs the electrostatics of the junction and creates local electric fields as evidenced by the band bending near domain boundary. To the best of our knowledge, this study provides the first microscopic understanding of the crucial physics occurring near domain boundaries of mixed valence in K-TCNQ, or broadly speaking charge transfer complexes, which highlights these boundaries as potential “weak” points to initiate the electric field induced insulator-to-metal transition.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Exact matrix product state representation and convergence of a fully correlated electronic wavefunction in the infinite-basis limit

Here In this paper we present the exact representation of a fully correlated electronic wavefunction as the single-particle basis approaches completeness. It consists of a half-infinite chain of matrices of exponentially increasing size. The complete basis limit is illustrated numerically using the density-matrix renormalization-group method by computing the core-valence entanglement in the C 2 ground state in increasing subsets of cc-pVTZ and pVQZ bases until convergence is reached.

36 MATERIALS SCIENCE↗

Mixed-valence halide perovskites

Mixed-valence compounds—which feature an element in at least two different oxidation states—can display emergent optical and transport phenomena stemming from electron transfer between the different valences (intervalence charge-transfer; IVCT). As halide perovskites show promise as active materials in numerous optoelectronic devices, it is an opportune moment to incorporate and study the effects of mixed-valence in this versatile materials family, to access tunable electronic structures ranging from insulators to semiconductors to metals. Herein, we introduce the basic concepts of mixed-valence in molecules and discuss how these concepts may be extended to mixed-valence in extended solids. We then review the few studies of mixed valence in 3D and 2D halide perovskites and halide perovskites with mixed-valence impurities, ranging from studies in the early 1900s to the present day. In conclusion, through judicious choice of metal ion, its coordinating ligands and their geometry, and overall structural dimensionality, chemists can exert powerful synthetic control over electronic delocalization in mixed-valence perovskites, and we hope to see this intriguing materials class expand to encompass new compositions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

On the dissociation energy of BH

The dissociation energy D(0) of the X 1Sigma(+) state has been determined to be 81.5 + or - 0.5 kcal/mol. This value includes an estimate for basis set incompleteness and for core-core and core-valence correlation. The barrier in the A 1Pi state potential is estimated to be 1.9 + or - 0.2 kcal/mol. By analyzing the tunneling through the barrier, it is demonstrated that D(0) and the predissociation limit differ by about 0.8-0.9 kcal/mol. Thus the experimental predissociation limit of 82.5 + or - 0.4 kcal/mol is consistent with the values computed for D(0) and the barrier in this work.

Bauschlicher, Charles W., Jr.↗

X-Ray Photoemission Measurements of La(1-x)Ca(x)CoO3(x = 0, 0.5)

X-ray photoemission measurements of the core levels and valence electronic structure of LaCoO3 and La(0.5)Ca(0.5)CoO3 high quality epitaxial films are presented. Shifts of the core levels and main valence band features are consistent with a doping-induced change in the chemical potential. Oxygen states are found to significantly contribute to a peak in the valence band at 1 eV binding energy, verifying earlier results of cluster calculations. A Fermi level crossing of this same band upon doping is observed, yielding a high Fermi level density of states.

Vasquez, R. P.↗

Neutron-unbound states in 31 Ne

Background: The Island of Inversion near the N = 20 shell gap is home to nuclei with reordered single-particle energy levels compared to the spherical shell model. Studies of 31 Ne have revealed that its ground state has a halo component, characterized by a valence neutron orbiting a deformed 30 Ne core. This lightly-bound nucleus with a separation energy of only S n = 170 keV is expected to have excited states that are neutron unbound. Purpose: The purpose of this experiment was to investigate the low-lying excited states in 31 Ne that decay by the emission of a single neutron. Methods: An 89 MeV/u 33 Mg beam impinged on a segmented Be reaction target. Neutron unbound states in 31 Ne were populated via a two-proton knockout reaction. The 30 Ne fragment and associated neutron from the decay of 31 Ne were detected by the MoNA-LISA-Sweeper experimental setup at the National Superconducting Cyclotron Laboratory. Invariant mass spectroscopy was used to reconstruct the two-body decay energy ( 30 Ne + n). Results: The two-body decay energy spectrum exhibits two features: a low-lying peak at 0.30 ± 0.17 MeV and a broad enhancement at 1.50 ± 0.33 MeV, each fit with an energy-dependent asymmetric Breit-Wigner line shape representing a resonance in the continuum. Accompanying shell model calculations using the FSU interaction within NuShellX, combined with cross-section cal culations using the eikonal reaction theory, indicate that these peaks in the decay energy spectrum are caused by multiple resonant states in 31 Ne. Conclusions: In this study, excited states in 31 Ne were observed for the first time. Transitions from calculated shell model final states in 31 Ne to bound states in 30 Ne are in good agreement with the measured decay energy spectrum. Cross-section calculations for the two-proton knockout populating 31 Ne states as well as spectroscopic factors pertaining to the decay of 31 Ne into 30 Ne are used to examine the results within the context of the shell model expectations.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Probing the Dipole-Bound State in the 9-Phenanthrolate Anion by Photodetachment Spectroscopy, Resonant Two-Photon Photoelectron Imaging, and Resonant Photoelectron Spectroscopy

Valence-bound anions with a dipolar core can support dipole-bound states (DBSs) below the electron detachment threshold. The highly diffuse DBS observed is usually of σ symmetry with an s-like orbital. Recently, a π-type DBS was observed experimentally in the 9-anthrolate anion (9AT – ) and it was shown to be stabilized due to the large anisotropic polarizability of the 9AT core. To confirm the general existence of π-DBS and its structural dependence, here we report an investigation of the 9-phenanthrolate anion (9PT – ), which has a different structure and lower symmetry than 9AT – . Photodetachment spectroscopy revealed a DBS 257 cm -1 below the detachment threshold of 9PT – at 19,627 cm -1 (2.4334 eV). Resonant two-photon photoelectron imaging indeed showed a π symmetry for the DBS. Similar to that observed in 9AT – , the π-DBS in 9PT – is also stabilized by the anisotropic polarizability of the 9PT core and accessed via non-adiabatic population transfer from the initially populated σ-DBS. Photodetachment spectroscopy unveiled nine above-threshold vibrational resonances of the DBS, resulting in nine highly non-Franck-Condon resonant photoelectron spectra by tuning the detachment laser to the vibrational resonances. In conclusion, the combination of photodetachment spectroscopy and resonant photoelectron spectroscopy allowed frequencies for nine vibrational modes of the 9-phenathroxy radical to be measured, including the six lowest frequency bending modes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Electronic structure modulation of MoS2 by substitutional Se incorporation and interfacial MoO3 hybridization: Implications of Fermi engineering for electrocatalytic hydrogen evolution and oxygen evolution

The design of earth-abundant electrocatalysts that can facilitate water splitting at low overpotentials, provide high current densities, and enable prolonged operational lifetimes is central to the production of sustainable fuels. The distinctive atomistic and electronic structure characteristics of the edges of MoS2 imbue high reactivity toward the hydrogen evolution reaction. MoS2 is nevertheless characterized by significantly high overpotentials as compared to platinum. Here, we demonstrate that modulation of the electronic structure of MoS2 through interfacial hybridization with MoO3 and alloying of selenium on the anion sublattice allows for systematic lowering of the conduction band edge and raising of the valence band edge, respectively. The former promotes enhanced electrocatalytic activity toward hydrogen evolution, whereas the latter promotes enhanced activity toward the oxygen evolution reaction. Such alloyed heterostructures prepared by sol-gel reactions and hydrothermal selenization expose a high density of edge sites. The alloyed heterostructures exhibit low overpotential, high current density, high turnover frequency, and prolonged operational lifetime. The mechanistic origins of catalytic activity have been established based on electronic structure calculations and x-ray absorption and emission spectroscopy probes of electronic structure, which suggest that interfacial hybridization at the MoO3 interface yields low-lying conduction band states that facilitate hydrogen adsorption. In contrast, shallow Se 4p-derived states give rise to a raised effective valence band maximum, which facilitates adsorption of oxygen intermediates and engenders a low overpotential for the oxygen evolution reaction. The findings illustrate the use of electronic structure modulation through interfacial hybridization and alloying to systematically improve electrocatalytic activity.

Parija, Abhishek↗