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NASA NTRS1989

Theoretical and material studies of thin-film electroluminescent devices

Thin-film electroluminescent (TFEL) devices are studied for a possible means of achieving a high resolution, light weight, compact video display panel for computer terminals or television screens. The performance of TFEL devices depends upon the probability of an electron impact exciting a luminescent center which in turn depends upon the density of centers present in the semiconductor layer, the possibility of an electron achieving the impact excitation threshold energy, and the collision cross section itself. Efficiency of such a device is presently very poor. It can best be improved by increasing the number of hot electrons capable of impact exciting a center. Hot electron distributions and a method for increasing the efficiency and brightness of TFEL devices (with the additional advantage of low voltage direct current operation) are investigated.

Summers, C. J.↗

NASA NTRS1989

Monolithically integrated two-dimensional arrays of optoelectronic threshold devices for neural network applications

A monolithic 10 x 10 two-dimensional array of 'optical neuron' optoelectronic threshold elements for neural network applications has been designed, fabricated, and tested. Overall array dimensions are 5 x 5 mm, while the individual neurons, composed of an LED that is driven by a double-heterojunction bipolar transistor, are 250 x 250 microns. The overall integrated structure exhibited semiconductor-controlled rectifier characteristics, with a breakover voltage of 75 V and a reverse-breakdown voltage of 60 V; this is attributable to the parasitic p-n-p transistor which exists as a result of the sharing of the same n-AlGaAs collector between the transistors and the LED.

Kim, J. H.↗

NASA NTRS2007

Increasing Linear Dynamic Range of a CMOS Image Sensor

A generic design and a corresponding operating sequence have been developed for increasing the linear-response dynamic range of a complementary metal oxide/semiconductor (CMOS) image sensor. The design provides for linear calibrated dual-gain pixels that operate at high gain at a low signal level and at low gain at a signal level above a preset threshold. Unlike most prior designs for increasing dynamic range of an image sensor, this design does not entail any increase in noise (including fixed-pattern noise), decrease in responsivity or linearity, or degradation of photometric calibration. The figure is a simplified schematic diagram showing the circuit of one pixel and pertinent parts of its column readout circuitry. The conventional part of the pixel circuit includes a photodiode having a small capacitance, CD. The unconventional part includes an additional larger capacitance, CL, that can be connected to the photodiode via a transfer gate controlled in part by a latch. In the high-gain mode, the signal labeled TSR in the figure is held low through the latch, which also helps to adapt the gain on a pixel-by-pixel basis. Light must be coupled to the pixel through a microlens or by back illumination in order to obtain a high effective fill factor; this is necessary to ensure high quantum efficiency, a loss of which would minimize the efficacy of the dynamic- range-enhancement scheme. Once the level of illumination of the pixel exceeds the threshold, TSR is turned on, causing the transfer gate to conduct, thereby adding CL to the pixel capacitance. The added capacitance reduces the conversion gain, and increases the pixel electron-handling capacity, thereby providing an extension of the dynamic range. By use of an array of comparators also at the bottom of the column, photocharge voltages on sampling capacitors in each column are compared with a reference voltage to determine whether it is necessary to switch from the high-gain to the low-gain mode. Depending upon the built-in offset in each pixel and in each comparator, the point at which the gain change occurs will be different, adding gain-dependent fixed pattern noise in each pixel. The offset, and hence the fixed pattern noise, is eliminated by sampling the pixel readout charge four times by use of four capacitors (instead of two such capacitors as in conventional design) connected to the bottom of the column via electronic switches SHS1, SHR1, SHS2, and SHR2, respectively, corresponding to high and low values of the signals TSR and RST. The samples are combined in an appropriate fashion to cancel offset-induced errors, and provide spurious-free imaging with extended dynamic range.

Pain, Bedabrata↗

NASA NTRS2010

Integral Battery Power Limiting Circuit for Intrinsically Safe Applications

A circuit topology has been designed to guarantee the output of intrinsically safe power for the operation of electrical devices in a hazardous environment. This design uses a MOSFET (metal oxide semiconductor field-effect transistor) as a switch to connect and disconnect power to a load. A test current is provided through a separate path to the load for monitoring by a comparator against a preset threshold level. The circuit is configured so that the test current will detect a fault in the load and open the switch before the main current can respond. The main current passes through the switch and then an inductor. When a fault occurs in the load, the current through the inductor cannot change immediately, but the voltage drops immediately to safe levels. The comparator detects this drop and opens the switch before the current in the inductor has a chance to respond. This circuit protects both the current and voltage from exceeding safe levels. Typically, this type of protection is accomplished by a fuse or a circuit breaker, but in order for a fuse or a circuit breaker to blow or trip, the current must exceed the safe levels momentarily, which may be just enough time to ignite anything in a hazardous environment. To prevent this from happening, a fuse is typically current-limited by the addition of the resistor to keep the current within safe levels while the fuse reacts. The use of a resistor is acceptable for non-battery applications where the wasted energy and voltage drop across the resistor can be tolerated. The use of the switch and inductor minimizes the wasted energy. For example, a circuit runs from a 3.6-V battery that must be current-limited to 200 mA. If the circuit normally draws 10 mA, then an 18-ohm resistor would drop 180 mV during normal operation, while a typical switch (0.02 ohm) and inductor (0.97 ohm) would only drop 9.9 mV. From a power standpoint, the current-limiting resistor protection circuit wastes about 18 times more power than the switch and the inductor configuration. In the fault condition, both the resistor and the inductor react immediately. The resistor reacts by allowing more current to flow and dropping the voltage. Initially, the inductor reacts by dropping the voltage, and then by not allowing the current to change. When the comparator detects the drop in voltage, it opens the switch, thus preventing any further current flow. The inductor alone is not sufficient protection, because after the voltage drop has settled, the inductor would then allow the current to change, in this example, the current would be 3.7 A. In the fault condition, the resistor is flowing 200 mA until the fuse blows (anywhere from 1 ms to 100 s), while the switch and inductor combination is flowing about 2 A test current while monitoring for the fault to be corrected. Finally, as an additional safety feature, the circuit can be configured to hold the switch opened until both the load and source are disconnected.

Burns, Bradley M.↗

NASA NTRS2019

Method of Using Power Grid as Large Antenna for Geophysical Imaging

A high-voltage power transmission system is used as an extremely large antenna to extract spatiotemporal space, physical, and geological information from geomagnetically induced currents (GIC). A differential magnetometer method is used to measure GIC and involves acquiring line measurements from a first fluxgate magnetometer under a high-voltage transmission line, acquiring natural field measurements from a reference magnetometer nearby but not under the transmission line, subtracting the natural field measurements from the line measurements, and determining the GIC-related Biot-Savart field from the difference. NASA warning and alarm systems can be triggered based on determinations of GIC amplitude levels that exceed a set threshold value.

Pulkkinen, Antti A.↗

DOE OSTI2021

Outlier classification using autoencoders: application for fluctuation driven flows in fusion plasmas

Understanding the statistics of fluctuation driven flows in the boundary layer of magnetically confined plasmas is desired to accurately model the lifetime of the vacuum vessel components. Mirror Langmuir probes (MLPs) are a novel diagnostic that uniquely allow us to sample the plasma parameters on a time scale shorter than the characteristic time scale of their fluctuations. Sudden large-amplitude fluctuations in the plasma degrade the precision and accuracy of the plasma parameters reported by MLPs for cases in which the probe bias range is of insufficient amplitude. While some data samples can readily be classified as valid and invalid, we find that such a classification may be ambiguous for up to 40% of data sampled for the plasma parameters and bias voltages considered in this study. In this contribution, we employ an autoencoder (AE) to learn a low-dimensional representation of valid data samples. By definition, the coordinates in this space are the features that mostly characterize valid data. Ambiguous data samples are classified in this space using standard classifiers for vectorial data. In this way, we avoid defining complicated threshold rules to identify outliers, which require strong assumptions and introduce biases in the analysis. By removing the outliers that are identified in the latent low-dimensional space of the AE, we find that the average conductive and convective radial heat fluxes are between approximately 5% and 15% lower as when removing outliers identified by threshold values. For contributions to the radial heat flux due to triple correlations, the difference is up to 40%.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

NASA NTRS2004

Central Stars of Planetary Nebulae in the SMC

In FUSE cycle 3's program C056 we studied four Central Stars of Planetary Nebulae (CSPN) in the Small Magellanic Could. All FUSE observations have been successfully completed and have been reduced and analyzed. The observation of one object (SMP SMC 5) appeared to be off-target and no useful stellar flux was gathered. For another observation (SMP SMC 1) the voltage problems resulted in the loss of data from one of the SiC detectors, but we were still able to analyze the remaining data. The analysis and the results are summarized below. The FUSE data were reduced using the latest available version of the FUSE calibration pipeline (CALFUSE v2.4). The flux of these SMC post-AGB objects is at the threshold of FUSE S sensitivity, and the targets required many orbit-long exposures, each of which typically had low (target) count-rates. The background subtraction required special care during the reduction, and was done in a similar manner to our FUSE cycle 2 BOO1 objects. The resulting calibrated data from the different channels were compared in the overlapping regions for consistency. The final combined, extracted spectra of each target was then modeled to determine the stellar and nebular parameters. The FUSE spectra, combined with archival HST spectra, have been analyzed using stellar atmospheres codes such as TLUSTY and CMFGEN to derive photospheric and wind parameters of the central stars, and with ISM models to determine the amount and temperature of the surrounding atomic and molecular hydrogen. We have combined these results with those of our cycle 4 (D034) program (CSPN of the LMC) in Herald & Bianchi 2004a (paper in preparation, will be submitted to ApJ in June 2004). Two of the three SMC objects analyzed were found to have significantly lower stellar temperatures than had been predicted using nebular photoionization models, indicating either a hotter ionizing companion or the existence of strong shocks in the nebular environment. The analysis also revealed that some objects are surrounded by significant quantities of hot (e.g., 1000- 2000 K) molecular H2, similar to what we found for some LMC and Galactic CSPN (Herald & Bianchi 2002, 2003a, b, 2004b, c, d).

Bianchi, Luciana↗

DOE OSTI2020

Impact of undoped substrates on high performance silicon solar cells

Today's highest-efficiency silicon solar cells typically operate near the threshold between low-level and high-level injection. It is not well understood if pushing further into a regime in which the cell operating point is solidly in high-level injection at all times of the day has further benefits for the solar cell performance. From a reliability perspective, cells fabricated on lower doped silicon have a larger breakdown voltage. This advantage can affect the design of modules allowing higher voltages and a relaxation of the number of bypass diodes needed. In this project, we present a comprehensive assessment, both experimental and using simulation, of how bulk resistivity, light intensity, and operation temperature impact the performance of the silicon solar cell. This work incorporates a comprehensive device physics analysis assisted by numerical simulation. The source code is now available under General Public License (GPL3), and to further leverage the findings of this project and outreach people outside of the scientific community, we are working with www.pveducation.org (which receives >1 million visitors a year) to create interactive content using our simulation results. The simulation results indicate that high bulk resistivity wafers (>>10 Ωcm) require bulk Shockley-Read-Hall (SRH) lifetimes in the millisecond range to outperform wafers with standard bulk resistivities (<10 Ωcm). Additionally, above bulk resistivities of 10 Ωcm (the exact value depends on the bulk characteristics of the wafer), the cell efficiency is weakly dependent on the bulk resistivity. As a result, ingot manufactures may have an opportunity to further reduce wafer cost by growing higher resistivity ingots that are more tolerant to resistivity variations. This project is particularly relevant today, as solar cell architectures with improved surface passivation and milliseconds lifetimes wafers are commercially available, leveraging potential benefits of using higher bulk resistivities. Outside of interdigitated back contact (IBC) cell, reported studies on high resistivity silicon (>100 Ωcm) are very limited. To the best of our knowledge, this project provides for the first-time experimental insight on solar cells fabricated on wafers with bulk resistivities up to several thousand Ωcm, delivering a comprehensive vision of their performance under real-world temperature and light intensity operation conditions. We manufactured and characterized solar cells with bulk resistivities in the range of 1 Ωcm to >15k Ωcm. Under standard testing conditions (STC), we measured solar cells efficiencies over 20% over the entire range of bulk resistivities, using our baseline cell processing. To evaluate the cell performance in real-world operation conditions, the solar cells were measured at different temperatures (25-80°C) and at different light intensities (0.1-1 suns). The measurements show that the bulk resistivity does not impact the solar cell response to temperature and light intensity. Similar thermal coefficients (TC) were measured for standard and high bulk resistivities, and they are comparable with the TC values reported in the literature for standard bulk resistivities <10 Ωcm. After light soaking, the solar cell didn’t show signs of light-induced degradation (LID). This result was expected since n-type float zone (FZ) wafers were used in this work, i.e. low traces of boron and low concentration of oxygen (oxygen is typically found in the seed end of Czochralski (CZ) ingots). We measured for high bulk resistivities (>10 Ωcm) extremely high breakdown voltages (>1000V). In conclusion, the insight provided by this project can positively impact the levelized cost of energy (LCOE) of the photovoltaic systems through its effect on cell and ingot manufacturing yield, silicon cell power output, and module reliability.

14 SOLAR ENERGY↗

NASA NTRS1989

Transient fault behavior in a microprocessor: A case study

An experimental analysis is described which studies the susceptibility of a microprocessor based jet engine controller to upsets caused by current and voltage transients. A design automation environment which allows the run time injection of transients and the tracing from their impact device to the pin level is described. The resulting error data are categorized by the charge levels of the injected transients by location and by their potential to cause logic upsets, latched errors, and pin errors. The results show a 3 picoCouloumb threshold, below which the transients have little impact. An Arithmetic and Logic Unit transient is most likely to result in logic upsets and pin errors (i.e., impact the external environment). The transients in the countdown unit are potentially serious since they can result in latched errors, thus causing latent faults. Suggestions to protect the processor against these errors, by incorporating internal error detection and transient suppression techniques, are also made.

Duba, Patrick↗

DOE OSTI2022

Security Enhancement of Network Constraint Grid-Edge Energy Management System

Network constrained grid edge energy management system (EMS) provides economic solution for active and reactive power dispatch of distributed energy resources (DERs) at the grid edge level. Grid edge EMS ensures secure interconnection of a circuit segment to the distribution system by maintaining grid code requirements (e.g. IEEE 1547–2018). Grid edge EMS is dependent on communication to receive load measurement, which brings a risk of unobservable false data injection attacks (FDIAs). To mitigate the risk, this paper proposes a framework to enhance resilient operation of grid edge EMS by detecting the unobservable FDIAs on loads and replacing them with forecasted values. In this work, a two-step detection algorithm is proposed. In first step, conventional residual based algorithm is deployed. Autoencoder (AE) based data driven mechanism is included in second step to detect the presence of unobservable FDIAs. After ensuring the presence of FDIA, its specific location is detected by checking the maximum residue values till the predefined threshold value is reached. Detected false data injected loads are then replaced with forecasted load values following long-short term memory (LSTM) based forecast to ensure resilient performance of grid edge EMS in the presence of attacks. This proposed security enhancement framework for grid edge EMS is evaluated in IEEE 13 bus system with three integrated DERs. Numerical simulation shows the validation of the proposed framework by reducing voltage violation in real operation of grid edge EMS.

cyber attack detection↗

NASA NTRS1990

The impact of NRZ data asymmetry on the performance of a space telemetry system

The telemetry data asymmetry due to rising and falling voltage transitions can cause undesired spectral components at the output of a spacecraft transmitter. The performance of a space telemetry system can potentially degrade because of these undesired components. Here, an expression is derived for the power spectral density of an asymmetric nonreturn-to-zero (NRZ) data stream. This formula is then used to investigate how the data bandwidth varies with data asymmetry. At the receiver end, the threshold levels of undesired spectral components that fall into the carrier-tracking-loop bandwidth are determined by examining the derived spectral density. Further, based on this formula, a simple technique is developed for the computation of bit signal-to-noise ratio (SNR) degradation due to data asymmetry. The telemetry bit SNR degradations derived using this technique are compared with results obtained previously and with measurements by the Electronic Systems Test Laboratory (ESTL) at the Lyndon B. Johnson Space Center.

Nguyen, T. M.↗

DOE OSTI2021

Heavy-ion-induced displacement damage effects in magnetic tunnel junctions with perpendicular anisotropy

Here, we evaluate the resilience of CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) with perpendicular magnetic anisotropy to displacement damage induced by heavy ion irradiation. MTJs were exposed to 3 MeV Ta 2+ ions at different levels of ion beam fluence spanning five orders of magnitude. The devices remained insensitive to beam fluences up to 10 11 ions/cm 2 , beyond which a gradual degradation in the device magnetoresistance, coercive magnetic field, and spin-transfer-torque switching voltage were observed, ending with a complete loss of magnetoresistance at very high levels of displacement damage (>0.035 displacements per atom). The loss of magnetoresistance is attributed to structural damage at the MgO interfaces, which allows electrons to scatter among the propagating modes within the tunnel barrier and reduces the net spin polarization. Ion-induced damage to the interface also reduces the perpendicular magnetic anisotropy. This study clarifies the displacement damage thresholds that lead to significant irreversible changes in the characteristics of spin-transfer-torque magnetic random access memory (STT-MRAM) and elucidates the physical mechanisms underlying the deterioration in device properties.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

NASA NTRS1975

Migratory gold resistive shorts - Chemical aspects of a failure mechanism

Integrated-circuit devices using the Ti/W/Au metal system are subject to failure mechanisms based on electrolytic corrosion. The migratory gold resistive short (MGRS) failure mode is one example of this mechanism and results in the formation of filamentary or dendritic deposits of gold between adjacent stripes on the IC chip. This reaction requires the presence of a sufficient amount of water, a bias voltage between adjacent stripes, and the activation of the cathodic (-) stripe. Gold ions are transported from anode to cathode through a film of moisture adsorbed on the surface of the chip; halide ions are probably involved in the transfer. Their presence is verified experimentally by X-ray photoelectron spectroscopy. Some of the chemical and electrostatic factors involved in the MGRS mechanism are discussed in this paper, including the questions of a threshold level of moisture and contamination.

Grunthaner, F. J.↗

DOE OSTI2023

Soft syndrome iterative decoding of quantum LDPC codes and hardware architectures

In practical quantum error correction implementations, the measurement of syndrome information is an unreliable step—typically modeled as a binary measurement outcome flipped with some probability. However, the measured syndrome is in fact a discretized value of the continuous voltage or current values obtained in the physical implementation of the syndrome extraction. In this paper, we use this “soft” or analog information to benefit iterative decoders for decoding quantum low-density parity-check (QLDPC) codes. Syndrome-based iterative belief propagation decoders are modified to utilize the soft syndrome to correct both data and syndrome errors simultaneously. We demonstrate the advantages of the proposed scheme not only in terms of comparison of thresholds and logical error rates for quasi-cyclic lifted-product QLDPC code families but also with faster convergence of iterative decoders. Additionally, we derive hardware (FPGA) architectures of these soft syndrome decoders and obtain similar performance in terms of error correction to the ideal models even with reduced precision in the soft information. The total latency of the hardware architectures is about 600 ns (for the QLDPC codes considered) in a 20 nm CMOS process FPGA device, and the area overhead is almost constant—less than 50% compared to min-sum decoders with noisy syndromes.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

DOE OSTI2024

Adaptive Fault Current-Limiting Control of MMC for Protection of Multiterminal HVDC Systems: Preprint

For the development of multi-terminal high voltage DC (MTDC) transmission, it is critical to design the protection system that can selectively isolate the faulty area from the healthy part of the dc grid using DC circuit breakers (DCCBs) while ensuring continuous operation of converter stations in the healthy part. However, because of the lack of fault current blocking capability in half-bridge (HB) modular multilevel converters (MMCs), when a dc fault occurs, the rising fault currents can quickly reach the blocking threshold within a few milliseconds and disrupt the operation of MMCs in the healthy part. Large DC reactors are often considered in series with DCCBs to reduce the rate of rise of fault currents and prevent blocking of MMCs in the healthy part of the grid. However, large DC reactors can prohibitively increase the cost of the system, particularly when they are considered in an offshore environment, for instance in offshore wind projects. Large dc reactors can also introduce stability issues and create post-fault oscillations. This paper presents an adaptive fault current limiting control method for MMCs to avoid their blocking and enable continuous operation of MTDC systems. It contains two parts: The first part is based on circulating current feedforward control that emulates virtual reactors in each arm of an MMC, which is immediately activated when the fault current starts to increase, to reduce the rate of rise of the fault current; the second part is triggered when the fault current exceeds a preset threshold by temporarily bypassing the SMs, serving as a complement to the fault current limiting effect of the first part. Both parts do not require fault detection signal and they are activated automatically during faults. Simulation case studies of a four-terminal bipolar MMC-HVDC system are presented to demonstrate the effectiveness of the proposed control methods.

active fault current limiting↗

DOE OSTI2024

Fast spark-detection system for GEM detectors

The sPHENIX experiment is currently under commissioning at the Relativistic Heavy Ion Collider (RHIC) at Brookhaven National Lab (BNL). The Time Projection Chamber (TPC) serves as a tracking detector for the experiment. The sPHENIX TPC uses a stack of four Gas Electron Multipliers (GEMs) as a gain stage in a reduced ion back-flow configuration. To mitigate the damaging effects of sparks in the GEMs, an online spark monitoring system was created. Once the system detects a spark in a GEM stack, the voltages across the GEMs in that stack can be lowered to prevent further sparking without affecting the gain and efficiency of the other modules. Spark signals are coupled out of the GEM stack by a pick-off capacitor attached to the bottom of the bottom GEM. Custom PCBs convert the oscillatory spark signal into a mono-polar pulse that is then digitized. The software then saves the waveform in a server and uses experimentally derived thresholds to determine how to react. As a result, the system has so far proven to be effective at improving the stability of the TPC and preventing damaging events while collecting cosmic ray data.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

NASA NTRS2012

Design of a Laboratory Hall Thruster with Magnetically Shielded Channel Walls, Phase III: Comparison of Theory with Experiment

A proof-of-principle effort to demonstrate a technique by which erosion of the acceleration channel in Hall thrusters of the magnetic-layer type can be eliminated has been completed. The first principles of the technique, now known as "magnetic shielding," were derived based on the findings of numerical simulations in 2-D axisymmetric geometry. The simulations, in turn, guided the modification of an existing 6-kW laboratory Hall thruster. This magnetically shielded (MS) thruster was then built and tested. Because neither theory nor experiment alone can validate fully the first principles of the technique, the objective of the 2-yr effort was twofold: (1) to demonstrate in the laboratory that the erosion rates can be reduced by >order of magnitude, and (2) to demonstrate that the near-wall plasma properties can be altered according to the theoretical predictions. This paper concludes the demonstration of magnetic shielding by reporting on a wide range of comparisons between results from numerical simulations and laboratory diagnostics. Collectively, we find that the comparisons validate the theory. Near the walls of the MS thruster, theory and experiment agree: (1) the plasma potential has been sustained at values near the discharge voltage, and (2) the electron temperature has been lowered by at least 2.5-3 times compared to the unshielded (US) thruster. Also, based on carbon deposition measurements, the erosion rates at the inner and outer walls of the MS thruster are found to be lower by at least 2300 and 1875 times, respectively. Erosion was so low along these walls that the rates were below the resolution of the profilometer. Using a sputtering yield model with an energy threshold of 25 V, the simulations predict a reduction of ~600 at the MS inner wall. At the outer wall ion energies are computed to be below 25 V, for which case we set the erosion to zero in the simulations. When a 50-V threshold is used the computed ion energies are below the threshold at both sides of the channel. Uncertainties, sensitivities and differences between theory and experiment are also discussed.

plasma simulations↗

NASA NTRS2021

The Temporal and Spatial Development of dB/dt for Substorms

Ground induced currents (GICs) due to space weather are a threat to high voltage power transmission systems. However, knowledge of ground conductivity is the largest source of errors in the determination of GICs. A good proxy for GICs is dB/dt obtained from the Bx and By components of the magnetic field fluctuations. It is known that dB/dt values associated with magnetic storms can reach dangerous levels for power transmission systems. On the other hand, it is not uncommon for dB/dt values associated with substorms to exceed prior Pulkkinen and Molinski critical thresholds of 1.5 nT/s and 5 nT/s, respectively, and the temporal and spatial changes of the dB/dt associated with substorms, unlike storms, are not well understood. Using two dimensional maps of dB/dt over North America and Greenland derived from the spherical elementary currents, we investigate the temporal and spatial change of dB/dt for both a single substorm event and a two dimensional superposed epoch analysis of many substorms. Both the single event and the statistical analysis shows a sudden increase of dB/dt at substorm onset followed by an expansion poleward, westward, and eastward after the onset during the expansion phase. The area of dB/dt values exceeding the two critical thresholds from the initial onset dB/dt values showed little to no expansion equatorward. The temporal and spatial development of the dB/dt resembles the temporal and spatial change of the auroral emissions. Substorm values of dB/dt peak shortly after the auroral onset time and in at least one event exceeded 35 nT/s for a non-storm time substorm. In many of our 81 cases the area that exceeds the threshold of 1.5 nT/s is over several million square kilometers and after about 30 minutes the dB/dt values fall below the threshold level. These results address one of goals of the Space Weather Action Plan, which are to establish benchmarks for space weather events and improve modeling and prediction of their impacts on infrastructure. Plain language: The change in the ground magnetic field with respect to time (dB/dt) associated with magnetic storms (a large disturbance of the magnetic field of the earth) can reach dangerous levels for power transmission systems. On the other hand, substorms, which are a smaller more localized disturbance of the Earth’s magnetic field, are more common. It is not uncommon for substorm dB/dt values to also exceed dangerous levels and the temporal and spatial changes of the dB/dt associated with substorms, unlike storms, are not well understood. Our analysis shows a sudden increase of dB/dt at substorm onset, which peaks shortly after the start of the substorm, followed shortly after by an expansion northward, westward, and eastward after the onset.

ionospheric currents↗