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At least 415 records · Page 23

Terahertz lasers and amplifiers based on resonant optical phonon scattering to achieve population inversion

The present invention provides quantum cascade lasers and amplifier that operate in a frequency range of about 1 Terahertz to about 10 Terahertz. In one aspect, a quantum cascade laser of the invention includes a semiconductor heterostructure that provides a plurality of lasing modules connected in series. Each lasing module includes a plurality of quantum well structure that collectively generate at least an upper lasing state, a lower lasing state, and a relaxation state such that the upper and the lower lasing states are separated by an energy corresponding to an optical frequency in a range of about 1 to about 10 Terahertz. The lower lasing state is selectively depopulated via resonant LO-phonon scattering of electrons into the relaxation state.

Hu, Qing↗

InP-Based Ridge Waveguide Lasers for Wavelength Division Multiplexing Applications

Wavelength division multiplexed (WDM) systems place stringent requirements on the absolute wavelength and wavelength spacing of the elements in laser arrays. Ridge waveguides (RW) show excellent potential for practical implementation due to their simple fabrication with relaxed fabrication tolerances, high reliability and good performancce. An analysis of the fabrication tolerances for RW and buried heterostructure (BH) devices is performed, showing the advantages offered by the ridge design.

wavelength↗

Laser activated MTOS microwave device

A light-activated semiconductor device usable as an optoelectronic switch, pulse generator or optical detector is provided. A semiconductor device is disclosed which provides back-to-back metal-thin oxide-silicon (MTOS) capacitors. Each capacitor includes a thin, light-absorptive aluminum electrode which overlies a thin oxide layer and a lightly doped region implanted in an intrinsic silicon substrate.

Maserjian, J.↗

Advanced Laser Processing of Materials--Fundamentals and Applications

Preparation of amorphous thin films in semiconductors and their transition to the crystalline phase may apply to switching devices. Surfaces of single crystal samples of bulk In2Se3 and thin films of InSe were treated using an excimer laser, and microscopic examination showed the treated portions of the surface had become amorphous. Film samples of InSe were laser-treated like the bulk samples. Examination of these treated flims showed shifts in the optical transmittance spectra as well as surface morphology changes.

amorphous thin films semiconductors crystalline ph↗

Solar and laser energy conversion with Schottky barrier solar cells

Photovoltaic devices have been fabricated for solar and short-wavelength laser energy conversion using the thin metal film-semiconductor (Schottky barrier) approach. Studies of the metal film optical characteristics and the voltage outputs were emphasized. Air mass zero efficiencies of 8 to 9% in GaAs and laser conversion efficiencies of 25% at 4880 A in GaAs(0.6)P(0.4) are presently measured, with projected efficiencies of 15 and 45%, respectively. The techniques, if applied successfully to semiconductor thin films, could have an impact in solar energy terrestrial application.

Stirn, R. J.↗

Diode laser array

A diode laser array comprises a substrate of a semiconductor material having first and second opposed surfaces. On the first surface is a plurality of spaced gain sections and a separate distributed Bragg reflector passive waveguide at each end of each gain section and optically connecting the gain sections. Each gain section includes a cavity therein wherein charge carriers are generated and recombine to generate light which is confined in the cavity. Also, the cavity, which is preferably a quantum well cavity, provides both a high differential gain and potentially large depth of loss modulation. Each waveguide has a wavelength which is preferably formed by an extension of the cavity of the gain sections and a grating. The grating has a period which provides a selective feedback of light into the gain sections to supporting lasing, which allows some of the light to be emitted from the waveguide normal to the surface of the substrate and which allows optical coupling of the gain sections. Also, the grating period provides an operating wavelength which is on the short wavelength side of the gain period of the gain sections required for laser oscillation. An RF pulse is applied so as to maximize the magnitude of the loss modulation and the differential gain in the gain sections. The array is operated by applying a DC bias to all the gain sections at a level just below the threshold of the gain sections to only one of the gain sections which raises the bias in all of the gain sections to a level that causes all of the gain sections to oscillate. Thus, a small bias can turn the array on and off.

Carlson, Nils W.↗

Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport

Interest in optical devices which can operate in the visible spectrum has motivated research interest in the II-VI wide band gap semiconductor materials. The recent challenge for semiconductor opto-electronics is the development of a laser which can operate at short visible wavelengths, In the past several years, major advances in thin film technology such as molecular beam epitaxy and metal organic chemical vapor deposition have demonstrated the applicability of II-VI materials to important devices such as light-emitting diodes, lasers, and ultraviolet detectors.The demonstration of its optical bistable properties in bulk and thin film forms also make ZnSe a possible candidate material for the building blocks of a digital optical computer. Despite this, developments in the crystal growth of bulk II-VI semiconductor materials has not advanced far enough to provide the low price, high quality substrates needed for the thin film growth technology. The electrical and optical properties of semiconductor materials depend on the native point defects, (the deviation from stoichiometry), and the impurity or dopant distribution. To date, the bulk growth of ZnSe substrates has been plagued with problems related to defects such as non-uniform distributions of native defects, impurities and dopants, lattice strain, dislocations, grain boundaries, and second phase inclusions which greatly effect the device performance. In the bulk crystal growth of some technologically important semiconductors, such as ZnTe, CdS, ZnSe and ZnS, vapor growth techniques have significant advantages over melt growth techniques due to the high melting points of these materials.

Su, Ching-Hua↗

Raman scattering from phonons and magnons in magnetic semiconductors, MnTe

Comparisons are made between theoretical and experimental data on laser Raman scattering by phonons and two-magnons in antiferromagnetic and paramagnetic phases of MnTe. The study was performed specifically to characterize the magnetic exchange coupling constants of the Mn ions in the samples. Crystal MnTe samples were bombarded with an Ar ion laser beam to obtain spectrometer and photon counter data. One E(2g) phonon with a room temperature energy of 178/cm and a two-magnon peak of 360/cm were observed in the Raman spectrum. A spin wave dispersion relation is presented for the spectrum. Finally, a Monte Carlo technique was used to calculate the two-magnon joint density of states that best fits the experimental data.

Mobasser, S. R.↗

Developments in mode-locked lasers and their applications

The most important recent advance with respect to mode locking has been the development of 'colliding-pulse' mode locking. An important extension to this method is reported. According to this extension, the colliding pulse function is obtained by making use of an 'antiresonant ring' laser cavity. The new concept has been applied to a flash-pumped passively mode-locked Nd:YAG laser in a number of experiments. Attention is given to mode locking of a self-pumped phase conjugate laser, picosecond photoacoustic experiments, and picosecond pulses on semiconductor surfaces.

Siegman, A. E.↗

Technology Development of Miniaturized Far-Infrared Sources for Biomolecular Spectroscopy

The objective of this project was to develop a purely solid-state based, thus miniaturized, far-infrared (FIR) (also known as terahertz (THz)) wave source using III-V semiconductor nanostructures for biomolecular detection and sensing. Many biomolecules, such as DNA and proteins, have distinct spectroscopic features in the FIR wavelength range as a result of vibration-rotation-tunneling motions and various inter- and intra-molecule collective motions. Spectroscopic characterization of such molecules requires narrow linewidth, sufficiently high power, tunable (in wavelength), and coherent FIR sources. Unfortunately, the FIR frequency is one of the least technologically developed ranges in the electromagnetic spectrum. Currently available FIR sources based on non-solid state technology are bulky, inefficient, and very often incoherent. In this project we investigated antimonide based compound semiconductor (ABCS) nanostructures as the active medium to generate FIR radiation. The final goal of this project was to demonstrate a semiconductor THz source integrated with a pumping diode laser module to achieve a compact system for biomolecular applications.

Kono, Junichiro↗

Microelectromechanical Systems (MEMS) Broadband Light Source Developed

A miniature, low-power broadband light source has been developed for aerospace applications, including calibrating spectrometers and powering miniature optical sensors. The initial motivation for this research was based on flight tests of a Fabry-Perot fiberoptic temperature sensor system used to detect aircraft engine exhaust gas temperature. Although the feasibility of the sensor system was proven, the commercial light source optically powering the device was identified as a critical component requiring improvement. Problems with the light source included a long stabilization time (approximately 1 hr), a large amount of heat generation, and a large input electrical power (6.5 W). Thus, we developed a new light source to enable the use of broadband optical sensors in aerospace applications. Semiconductor chip-based light sources, such as lasers and light-emitting diodes, have a relatively narrow range of emission wavelengths in comparison to incandescent sources. Incandescent light sources emit broadband radiation from visible to infrared wavelengths; the intensity at each wavelength is determined by the filament temperature and the materials chosen for the filament and the lamp window. However, present commercial incandescent light sources are large in size and inefficient, requiring several watts of electrical power to obtain the desired optical power, and they emit a large percentage of the input power as heat that must be dissipated. The miniature light source, developed jointly by the NASA Glenn Research Center, the Jet Propulsion Laboratory, and the Lighting Innovations Institute, requires one-fifth the electrical input power of some commercial light sources, while providing similar output light power that is easily coupled to an optical fiber. Furthermore, it is small, rugged, and lightweight. Microfabrication technology was used to reduce the size, weight, power consumption, and potential cost-parameters critical to future aerospace applications. This chip-based light source has the potential for monolithic fabrication with on-chip drive electronics. Other uses for these light sources are in systems for vehicle navigation, remote sensing applications such as monitoring bridges for stress, calibration sources for spectrometers, light sources for space sensors, display lighting, addressable arrays, and industrial plant monitoring. Two methods for filament fabrication are being developed: wet-chemical etching and laser ablation. Both yield a 25-mm-thick tungsten spiral filament. The proof-of-concept filament shown was fabricated with the wet etch method. Then it was tested by heating it in a vacuum chamber using about 1.25 W of electrical power; it generated bright, blackbody radiation at approximately 2650 K. The filament was packaged in Glenn's clean-room facilities. This design uses three chips vacuum-sealed with glass tape. The bottom chip consists of a reflective film deposited on silicon, the middle chip contains a tungsten filament bonded to silicon, and the top layer is a transparent window. Lifetime testing on the package will begin shortly. The emitted optical power is expected to be approximately 1.0 W with the spectral peak at 1.1 mm.

Tuma, Margaret L.↗

Conversion of type of quantum well structure

A method for converting a Type 2 quantum well semiconductor material to a Type 1 material. A second layer of undoped material is placed between first and third layers of selectively doped material, which are separated from the second layer by undoped layers having small widths. Doping profiles are chosen so that a first electrical potential increment across a first layer-second layer interface is equal to a first selected value and/or a second electrical potential increment across a second layer-third layer interface is equal to a second selected value. The semiconductor structure thus produced is useful as a laser material and as an incident light detector material in various wavelength regions, such as a mid-infrared region.

Ning, Cun-Zheng↗

Conversion of Type of Quantum Well Structure

A method for converting a Type 2 quantum well semiconductor material to a Type 1 material. A second layer of undoped material is placed between first and third layers of selectively doped material, which are separated from the second layer by undoped layers having small widths. Doping profiles are chosen so that a first electrical potential increment across a first layer-second layer interface is equal to a first selected value and/or a second electrical potential increment across a second layer-third layer interface is equal to a second selected value. The semiconductor structure thus produced is useful as a laser material and as an incident light detector material in various wavelength regions, such as a mid-infrared region.

Ning, Cun-Zheng↗

Development of Efficient Mid-IR Interband Cascade Lasers for Chemical Sensing

Significant progress has been made: Above room temperature (up to 350K) pulsed operation has been demonstrated. CW operation temperature has been raised up to 237 K. DFB IC lasers have been applied for the detection of trace gases such as CH4, HCl, and H2CO. Devices have been operated continuously over several hundred hours without degradation. Main challenge remains for many potential applications of ICLs. CW operation at room temperature and above with significant output powers. There is still significant room for improvement: Laser design and material quality - many parameters have not been optimized. Device fabrication and thermal management (passivation, better mounting, etc.). Significantly higher output power can be achieved with laser arrays.

diode lasers↗

Research and Development of Laser Diode Based Instruments for Applications in Space

Laser diode technology continues to advance at a very rapid rate due to commercial applications such as telecommunications and data storage. The advantages of laser diodes include, wide diversity of wavelengths, high efficiency, small size and weight and high reliability. Semiconductor and fiber optical-amplifiers permit efficient, high power master oscillator power amplifier (MOPA) transmitter systems. Laser diode systems which incorporate monolithic or discrete (fiber optic) gratings permit single frequency operation. We describe experimental and theoretical results of laser diode based instruments currently under development at NASA Goddard Space Flight Center including miniature lidars for measuring clouds and aerosols, water vapor and wind for Earth and planetary (Mars Lander) use.

Krainak, Michael↗