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At least 415 records · Page 23

Effect of slow rotational diffusion on angular correlations.

The theory for perturbed angular correlations of gamma radiation has been extended to include the possibility of adiabatic variation in the interaction Hamiltonian, K, for the intermediate state. The calculation begins from a polycrystalline model. It is shown that adiabatic variation in K introduces a time dependence into the angles which express the orientation of the molecular frame. The relevance of the adiabatic limit to the use of perturbed angular correlations of gamma radiation for study of the motion of radioactive species in viscous media is discussed.

Marshall, A. G.↗

Vibrational spectra and structure of azomethane and azomethane-d6.

The infrared and Raman spectra of azomethane and azomethane-d(6) were examined in detail. Vibrational data provided definitive verification of a trans-structure with C(2h) symmetry. A vibrational assignment is proposed for the 24 fundamental modes based upon the observed contours, isotopic shift ratios, and group frequency correlations. Spectra of the polycrystalline samples indicate that there are at least four molecules per unit cell, since a number of the bands were observed to be split into doublets. The crystal also appeared to have a center of symmetry, since mutual exclusion was clearly operative.

Durig, J. R.↗

Shielded silicon gate complementary MOS integrated circuit.

An electrostatic shield for complementary MOS integrated circuits was developed to minimize the adverse effects of stray electric fields created by the potentials in the metal interconnections. The process is compatible with silicon gate technology. N-doped polycrystalline silicon was used for all the gates and the shield. The effectiveness of the shield was demonstrated by constructing a special field plate over certain transistors. The threshold voltages obtained on an oriented silicon substrate ranged from 1.5 to 3 V for either channel. Integrated inverters performed satisfactorily from 3 to 15 V, limited at the low end by the threshold voltages and at the high end by the drain breakdown voltage of the n-channel transistors. The stability of the new structure with an n-doped silicon gate as measured by the shift in C-V curve under 200 C plus or minus 20 V temperature-bias conditions was better than conventional aluminum gate or p-doped silicon gate devices, presumably due to the doping of gate oxide with phosphorous.

Lin, H. C.↗

Elevated temperature deformation of TD-nickel base alloys

Sensitivity of the elevated temperature deformation of TD-nickel to grain size and shape was examined in both tension and creep. Elevated temperature strength increased with increasing grain diameter and increasing L/D ratio. Measured activation enthalpies in tension and creep were not the same. In tension, the internal stress was not proportional to the shear modulus. Creep activation enthalpies increased with increasing L/D ratio and increasing grain diameter, to high values compared with that of the self diffusion enthalpy. It has been postulated that two concurrent processes contribute to the elevated temperature deformation of polycrystalline TD-nickel: (1) diffusion controlled grain boundary sliding, and (2) dislocation motion.

Petrovic, J. J.↗

Selection and preliminary evaluation of three structures as potential solid conductors of alkali ions: Two hollandites, a titanate, and a tungstate

Utilization of crystal-chemical criteria has suggested three structure types in which alkali ions may be mobile: (1)hollandites K(x)Mg(x/2)Ti(8-x/2)O16 and K(x)Al(x)Ti(8-x)O16 for 1.6 less than or equal to x less than or equal to 2.0 tungstate K2W4013; and (3) sodium hexatitante Na2Ti6O13. Each is a tunnel structure. An electrical screening procedure, previously tested on beta-alumina, has indicated high K(+) ion mobility in the hollandites and in the tungstate, but not in the hexatitanate. Specimens were polycrystalline disks near 90 percent of theoretical density. The ac conductivity calculated from dielectric and capacitance measurements has been attributed to ion mobility. This ac conductivity was up to 0.01/ohm-cm for hollandites and about 0.0001/ohm-cm for the tungstate, with approximate activation energies of 21 to 25 and 16 kJ/mole (5 to 6 and 4 kcal/mole), respectively. Electronic conduction and chemical reactivity have eliminated the tungstate from further consideration. The hollandites have been considered worthy of further development and evaluation.

Singer, J.↗

Effects of surface polishing on the microstrain behavior of telescope mirror materials

Rough ground silicic mirror substrate materials were found in previous investigations to exhibit significant surface yield. This effect was removed by surface etching, a procedure not normally employed in the finishing of optical telescope mirrors. The effects of fine grinding and polishing techniques as well as graded etching are investigated. Torsional shear measurements of yield strain versus stress are made on four candidate mirror substrate materials: polycrystalline silicon, ULE silica 7971, CER-VIT 101, and fused silica 7940. Commonly employed fine grinding and polishing practices are shown to remove a major portion of the surface yield found in rough ground mirror substrate materials.

Eul, W. A.↗

Electrical screening procedure for solid ionic conductors

An electrical screening method has been developed for preliminary evaluation of polycrystalline specimens of candidates for use as solid ionic conductive electrolytes in batteries. The procedure measures dielectric loss and capacitance, from which are calculated an ac conductivity attributed provisionally to ions and an activation energy for that conductivity. Electronic conductivity is directly measured. The screening procedure applied to sodium beta-alumina yielded acceptable values for conductivity and activation energy.

Kautz, H. E.↗

Adhesion, friction, and wear of a copper bicrystal with (111) and (210) grains

Sliding friction experiments were conducted in air with polycrystalline copper and ruby riders sliding against a copper bicrystal. Friction coefficient was measured across the bicrystal surface, and the initiation of adhesive wear was examined with scanning electron microscopy. Results indicate a marked increase in friction coefficient as the copper rider crossed the grain boundary from the (111) plane to the (210) plane of the bicrystal. Adhesion, friction, and initiation of adhesive wear was notably different in the adjacent grains of differing orientation. A slip-band adhesion-generated fracture mechanism for wear particle formation is proposed.

Brainard, W. A.↗

Electromotive force measurements on cells involving beta-alumina solid electrolyte

Open circuit emf measurements have been made to demonstrate that a two-phase, polycrystalline mixture of beta- alumina and alpha-alumina could be used as a solid electrolyte in galvanic cells with reversible electrodes fixing oxygen or aluminum chemical potentials. These measurements indicate that such a two phase solid electrolyte can be used to monitor oxygen chemical potentials as low as that corresponding to Al, Al2O3 coexistence. The activity of Na2O in beta-alumina in coexistence with alpha-alumina was also determined by emf measurements.

Choudhury, N.↗

Thermal conductivity of earth materials at high temperatures.

The total thermal conductivity (lattice plus radiative) of several important earth materials is measured in the temperature range from 500 to 1900 K. A new technique is used in which a CO2 laser generates a low-frequency temperature wave at one face of a small disk-shaped sample, and an infrared detector views the opposite face to detect the phase of the emerging radiation. Phase data at several frequencies yield the simultaneous determination of the thermal diffusivity and the mean extinction coefficient of the material. The lattice, radiative, and total thermal conductivities are then calculated. Results for single-crystal and polycrystalline forsterite-rich olivines and an enstatite indicate that, even in relatively pure large-grained material, the radiative conductivity does not increase rapidly with temperature. The predicted maximum total thermal conductivity at a depth of 400 km in an olivine mantle is 0.020 cal/cm/sec/deg C, which is less than twice the surface value.

Schatz, J. F.↗

Electron microscopy of some experimentally shocked counterparts of lunar minerals.

Particulate samples of experimentally shocked olivine, enstatite, and apatite and their unshocked equivalents were thinned by ion bombardment and examined by transmission methods in a conventional (100 kV) electron microscope. Enstatite shock-loaded at a peak pressure of 250 kb was partly transformed to relatively dense inverse defect spinel. Magnesian olivine shocked at a peak pressure of 200 kb shows intense lattice deformation. Magnesian olivine shock-loaded at a peak pressure of 400 kb was recrystallized to very fine polycrystalline aggregates. Apatite shock-loaded at a peak pressure of 250 kb shows planar deformation elements and shock-induced imperfections.

Sclar, C. B.↗

Fatigue hardening in niobium single crystals.

Nb single crystals of various orientations were cyclically deformed in tension-compression under strain control. At low strain amplitudes all crystals oriented for single slip and some oriented for multiple slip showed a two stage hardening. When present, the first stage was characterized with almost no cyclic work hardening. The rate of hardening in the second stage increased with strain amplitude and the amount of secondary slip. In crystals oriented for single slip kink bands developed on their side faces during rapid hardening stage which resulted in considerable amount of asterism in Laue spots. A cyclic stress-strain curve independent of prior history was found to exist which was also independent of crystal orientation. Furthermore, this curve differed only slightly from that of polycrystalline Nb obtained from data in literature.

Doner, M.↗

Auger electron spectroscopy study of initial stages of oxidation in a copper - 19.6-atomic-percent-aluminum alloy

Auger electron spectroscopy was used to examine the initial stages of oxidation of a polycrystalline copper - 19.6 a/o-aluminum alloy. The growth of the 55-eV aluminum oxide peak and the decay of the 59-, 62-, and 937-eV copper peaks were examined as functions of temperature, exposure, and pressure. Pressures ranged from 1x10 to the minus 7th power to 0.0005 torr of O2. Temperatures ranged from room temperature to 700 C. A completely aluminum oxide surface layer was obtained in all cases. Complete disappearance of the underlying 937-eV copper peak was obtained by heating at 700 C in O2 at 0.0005 torr for 1 hr. Temperature studies indicated that thermally activated diffusion was important to the oxidation studies. The initial stages of oxidation followed a logarithmic growth curve.

Ferrante, J.↗

Electrode materials for charge coupled devices

The use of polycrystalline silicon in charged coupled semiconductor devices is discussed. In particular, the electrical and optical properties of the material are characterized.

Gajda, W. T. J.↗

Epitaxial growth of 6H silicon carbide in the temperature range 1320 C to 1390 C

High-quality epitaxial layers of 6H SiC have been grown on 6H SiC substrates with the grown direction perpendicular to the crystal c-axis. The growth was by chemical vapor deposition from methyltrichlorosilane (CH3SiCl3) in hydrogen at temperatures in the range of 1320 to 1390 C. Epitaxial layers up to 80 microns thick were grown at rates of 0.4 microns/min. Attempts at growth on the (0001) plane of 6H SiC substrates under similar conditions resulted in polycrystalline cubic SiC layers. Optical and X-ray diffraction techniques were used to characterize the grown layers.

Will, H. A.↗

Technique for direct measurement of magnetic entropy of solids: Results for dysprosium titanium oxide

A measurement technique was devised which permits direct observation of the magnetic entropy of solids as a function of applied magnetic field. Measurements were made of the magnetic entropy, in the temperature range 2 to 20 K, of polycrystalline samples of dysprosium titanium oxide (Dy2Ti2O7) to determine its suitability for use as the working substance of a magnetic refrigerator. Magnetization measurements were also made at 4.2 K and below to provide additional information on the nature of the compound. The measurements indicated that crystalline electric fields perturbed the ground state of the dysprosium ions, removed the 16-fold degeneracy predicted by Hund's rules, and left only a twofold degeneracy in its place. A positive, temperature independent contribution to the magnetization was observed in the saturation region, which indicated that the doublet ground-state wave function was perturbed by a nearby unpopulated upper energy level.

Flood, D. J.↗

Elevated temperature deformation of thoria dispersed nickel-chromium

The deformation behavior of thoria nickel-chromium (TD-NiCr) was examined over the temperature range 593 C (1100 F) to 1260 C (2300 F) in tension and compression and at 1093 C (2000 F) in creep. Major emphasis was placed on: (1) the effects of the material and test related variables (grain size, temperature, stress and strain rate) on the deformation process; and (2) the evaluation of single crystal TD-NiCr material produced by a directional recrystallization process. Elevated temperature yield strength levels and creep activation enthalpies were found to increase with increasing grain size reaching maximum values for the single crystal TD-NiCr. Stress exponent of the steady state creep rate was also significantly higher for the single crystal TD-NiCr as compared to that determined for the polycrystalline materials. The elevated temperature deformation of TD-NiCr was analyzed in terms of two concurrent, parallel processes: diffusion controlled grain boundary sliding, and dislocation motion.

Kane, R. D.↗