Quasi-static major and minor strain-stress loops in textured polycrystalline Fe81.6Ga18.4 Galfenol
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Spectrum of iron ions in magnesium oxide
Change of electrical conductivity in periclase crystallites at high temperatures
Dependence of tungsten electrode work functions on positive ion sheaths between electrodes and cesium plasmas
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Influence of number of slip systems operating in magnesium on friction and effect of orientation of crystals on friction behavior
Technique prevents silicon wafers from adhering to susceptor following silicon epitaxial deposition. Annular ring of refractory material goes around wafer during epitaxial deposit. Silicon is deposited on ring, susceptor, and portions of wafer. Ring breaks away from susceptor and wafer and no silicon undergrowth occurs.
Chromium prepared by the iodide process was consolidated into 100-g buttons by arc melting and fabricated to sheet by rolling. Test specimens machined from the wrought sheet were annealed in palladium-purified hydrogen, followed by a purification anneal, in order to produce stable grain structures for testing. Observations of surface slip lines and dislocation substructures suggest that a diffusion-controlled, dislocation-climb mechanism is operative in the creep of chromium over the temperature range investigated.
Research on the fracture behavior of silicon nitride and silicon carbide is reported along with the role of anion impurities in the fabrication and behavior of magnesium oxide. The results of a survey of crack propagation in SiC and Si3N4 are presented. Studies in the following areas are reported: development of a fracture toughness testing technique, constant moment beam, microcrack examination, and etching techniques.
A summary is presented of optical measurements performed on a variety of cesium iodide samples to characterize quantitatively the optical quality of the materials, and to define and measure parameters which determine its suitability as a detector material for high energy cosmic ray experiments on HEAO-A. The general case of light transmission through a long rectangular slab under multiple internal reflections is discussed along with transmission and scattering as a function of wavelength at normal incidence. Scattering parameters are tabulated for encapsulated single crystal CsI and polyscin.
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The results are described of the final stage of the research involving the role of anions in the behavior of magnesium oxide, as well as the continued efforts of the fracture behavior of silicon nitride materials. These efforts, particularly the first, are further sub-divided in subsections describing individual types of behavior of materials.
Results from tests of the first variable-gap diminiode at an initial interelectrode spacing of 0.23 millimeter indicate sharply defined, relatively low ultimate power points. This characteristic supports the value of the diminiode as a well-controlled tool for thermionic-conversion research and development.
Explosive deformation (50 kbar range) induced, in Cu, Mo and Nb, internal friction peaks identical to those observed after large normal deformation. The variation of the peaks with pressure for Mo and Nb lead to an explanation of these processes in terms of double kink generation in screw and edge dislocations.
Various properties of ceramic materials were investigated. Magnesium oxide and the role of anion impurities were investigated together with the slow crack growth in silicon nitride-silicon carbide ceramics. The oxide program involved development of fabrication techniques for anion doped materials and evaluation of the role of these anions in the hot pressing response, grain boundary diffusion of nickel doped material, grain boundary microhardness, and grain growth. The carbide-nitride work employed commercial materials and the research involved evaluation of a recently reported technique for study of slow crack growth and the development of data for these commercial materials.
The first study area involved magnesium oxide and the role of anion impurities, while the second area was directed toward slow crack growth in silicon nitride-silicon carbide ceramics. The oxide program involved development of fabrication techniques for anion doped materials and evaluation of the role of these anions in the hot pressing response, grain boundary diffusion of nickel doped material, grain boundary microhardness, and grain growth.
The AMO efficiencies (no anti-reflection coating) obtained to date are 2.5% for solar cells deposited on graphite substrates, 3.5% for solar cells deposited on metallurgical silicon substrates, and 4.5% for solar cells fabricated from purified metallurgical silicon.
A .005 M solution of fluorescein in cyclohexanol was directionally solidified in a standard 10 x 10 x 45mm UV silica cuvette, using a bottom thermoelectric chilling device. Progress of the experiment was monitored by time lapse photography. During flight (SPAR I) the camera malfunctioned and only one quarter of the expected data were collected. Comparison of flight and ground specimens indicated that: (1) The dark green layer observed ahead of the solid-liquid interface which is most likely the solute-enriched zone, appears to be wider in the flight specimen; (2) Parasitic nucleation ahead of the solid-liquid interface in the flight sample led to an irregularly shaped interface, smaller grain size, equiaxed grain morphology and a larger average macroscopic growth rate; (3) The formation of equiaxed grains ahead of the solid-liquid interface in the flight specimen may be attributed to ordered islands within the liquid, which survived remelting because of the low degree of superheating (approximately equal to 1.5 C), did not settle because of reduced gravity and acted as nuclei during cooling.