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At least 415 records · Page 23

Slow plastic strain rate compressive flow in binary CoAl intermetallics

Constant-velocity elevated temperature compression tests have been conducted on a series of binary CoAl intermetallics produced by hot extrusion of blended prealloyed powders. The as-extruded materials were polycrystalline, and they retained their nominal 10-micron grain size after being tested between 1100 and 1400 K at strain rates ranging from 2 x 10 to the -4th to 2 x 10 to the -7th per sec. Significant plastic flow was obtained in all cases; while cracking was observed, much of this could be due to failure at matrix-oxide interfaces along extrusion stringers rather than to solely intergranular fracture. A maximum in flow strength occurs at an aluminum-to-cobalt ratio of 0.975, and the stress exponent appears to be constant for aluminum-to-cobalt ratios of 0.85 or more. It is likely that very aluminum-deficient materials deform by a different mechanism than do other compositions.

Whittenberger, J. D.↗

Structural characterization of high temperature composites

Glass, ceramic, and carbon matrix composite materials have emerged in recent years with potential properties and temperature resistance which make them attractive for high temperature applications such as gas turbine engines. At the outset of this study, only flexural tests were available to evaluate brittle matrix composites at temperatures in the 600 to 1000 C range. The results are described of an ongoing effort to develop appropriate tensile, compression, and shear test methods for high temperature use. A tensile test for unidirectional composites was developed and used to evaluate the properties and behavior of ceramic fiber reinforced glass and glass-ceramic matrix composites in air at temperatures up to 1000 C. The results indicate generally efficient fiber reinforcement and tolerance to matrix cracking similar to polymer matrix composites. Limiting properties in these materials may be an inherently very low transverse strain to failure, and high temperature embrittlement due to fiber/matrix interface oxidation.

Mandell, J. F.↗

Evaluation of chemical conversion material (protective coating) exposed to space environmental conditions

This report focuses on the development of an operational Rutherford backscattering spectrometry (RBS) system and shows the application of such a system on a space environmental test. Thin films of aluminum and tantalum were deposited on diamond substrates. These films were anodized and preexposure characterization spectra obtained using RBS and total hemispherical reflectance. The samples were exposed to energetic protons then postexposure characterization spectra was obtained using the same techniques. Conclusions based on the comparison of preexposure and postexposure spectra are presented. RBS comparison spectra show no change in the metal/metal oxide interface, while the comparison reflectance data indicate change. Explanations for this reflectance change are presented in this report.

Edwards, D. L.↗

Observation of radiation induced changes in stress and electrical properties in MOS devices

Strain measurements using X-ray diffraction were performed on irradiated commercial and radiation-hardened metal gate CMOS devices in addition to polysilicon gate NMOS devices. I-V curves were taken and V(ot) and V(it) were separated using the subthreshold slope method for all devices. A correlation has been shown to exist between physical strain relaxation and the electrical properties as a function of radiation dose and recovery. Data shown suggest that the physical response (strain relaxation) in the silicon at the oxide interface is a measure of the type of damage induced and the recovery mechanism. Postradiation measurements of Delta V(it) and Delta V(ot) taken immediately after irradiation support the conclusions of V. Zekeriya and T.-P. Ma (1983) and K. Kasama et al. (1986, 1987); compressive stress at the silicon/SiO2 interface does reduce radiation damage in the device.

Shaw, D. C.↗

2-D Modeling of Nanoscale MOSFETs: Non-Equilibrium Green's Function Approach

We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions and oxide tunneling are treated on an equal footing. Electrons in the ellipsoids of the conduction band are treated within the anisotropic effective mass approximation. Electron-electron interaction is treated within Hartree approximation by solving NEGF and Poisson equations self-consistently. For the calculations presented here, parallelization is performed by distributing the solution of NEGF equations to various processors, energy wise. We present simulation of the "benchmark" MIT 25nm and 90nm MOSFETs and compare our results to those from the drift-diffusion simulator and the quantum-corrected results available. In the 25nm MOSFET, the channel length is less than ten times the electron wavelength, and the electron scattering time is comparable to its transit time. Our main results are: (1) Simulated drain subthreshold current characteristics are shown, where the potential profiles are calculated self-consistently by the corresponding simulation methods. The current predicted by our quantum simulation has smaller subthreshold slope of the Vg dependence which results in higher threshold voltage. (2) When gate oxide thickness is less than 2 nm, gate oxide leakage is a primary factor which determines off-current of a MOSFET (3) Using our 2-D NEGF simulator, we found several ways to drastically decrease oxide leakage current without compromising drive current. (4) Quantum mechanically calculated electron density is much smaller than the background doping density in the poly silicon gate region near oxide interface. This creates an additional effective gate voltage. Different ways to. include this effect approximately will be discussed.

Svizhenko, Alexei↗

Creep Behavior and Durability of Cracked CMC

To understand failure mechanisms and durability of cracked Ceramic matrix composites (CMCs), Melt Infiltration (MI) SiCSiC composites with Sylramic-iBN fibers and full Chemical vapour infiltration SiCSiC composites with Sylramic-ion bombarded BN (iBN) and Hi-Nicalon -S fibers were pre-cracked between 150 to 200 megapascal and then creep and Sustained Peak Low Cycle Fatigue (SPLCF) tested at 13150 C at stress levels from 35 to 103 megapascal for up to 200 hours under furnace and burner rig conditions. In addition creep testing was also conducted on pre-cracked full Chemical vapour infiltration SiCSiC composites at 14500 C between 35 and 103 megapascal for up to 200 hours under furnace conditions. If the specimens survived the 200 hour durability tests, then they were tensile tested at room temperature to determine their residual tensile properties. The failed specimens were examined by Scanning electron microscope (SEM) to determine the failure modes and mechanisms. The influence of crack healing matrix, fiber types, crack density, testing modes and interface oxidation on durability of cracked Ceramic matrix composites (CMCs) will be discussed.

Creep↗

SISGR: Atom chip microscopy: A novel probe for strongly correlated materials

Microscopy techniques co-opted from nonlinear optics and high energy physics have complemented solid-state probes in elucidating the order manifest in condensed matter materials. Up until now, however, no attempts have been made to use modern techniques of ultracold atomic physics to directly explore properties of strongly correlated or topologically protected materials. Our current program is focused on introducing a novel magnetic field microscopy technique into the toolbox of imaging probes. Our prior DOE ESPM program funded the development of a novel instrument using a dilute gas Bose-Einstein condensate (BEC) as a scanning probe capable of measuring tiny magnetic (and electric) DC and AC fields above materials. We successfully built the world's first “scanning cryogenic atom chip microscope”, and we now are in the process of characterizing its performance before using the instrument to take the first wide-area images of transport flow within unconventional superconductors, pnictides and oxide interfaces (LAO/STO), topological insulators, and colossal magnetoresistive manganites. We will do so at temperatures outside the capability of scanning SQUIDs, with ~10x better resolution and without 1/f-noise. A notable goal will be to measure the surface-to-bulk conductivity ratio in topological insulators in a relatively model-independent fashion. We have completed the construction of this magnetic microscope. The instrument uses atom chips—substrates supporting micron-sized current-carrying wires that create magnetic microtraps near surfaces for ultracold thermal gases and BECs—to enable single-shot and raster-scanned large-field-of-view detection of magnetic fields. The fields emanating from electronic transport may be detected at the 10 -7 flux quantum (Φ0) level and below; that is, few to sub-micron resolution of sub-nanotesla fields over single-shot, millimeter-long detection lengths. By harnessing the extreme sensitivity of atomic clocks and BECs to external perturbations, we are now in a position to use atom chips for imaging transport in new regimes. Scanning quantum gas atom chip microscopy introduces three very important features to the toolbox of high-resolution scanning microscopy of strongly correlated or topological materials: simultaneous detection of magnetic and electric fields (down to the sub-single electron charge level; no invasive large magnetic fields or gradients; simultaneous micro- and macroscopic spatial resolution; DC to MHz detection bandwidth; freedom from 1/ƒ flicker noise at low frequencies; and, perhaps most importantly, the complete decoupling of probe and sample temperatures. The atom chip microscope can operate at maximum sensitivity and resolution without regard to the substrate temperature. While the BEC is among the coldest objects realizable (100 nK temperatures are typical), the atom chip substrate can be positioned 1 μm away from the BEC and be as hot as 400 K or as cold as the cryostat can cool. This is because unlike superconducting probes, whose temperature is closely coupled to nearby materials, quantum gases are immune to radiative heating. The energy gap between a Rb atom’s ground state and first excited state far exceeds the typical energy of room-temperature blackbody radiation; such atoms are therefore transparent to radiation heating by materials at room temperature or below. We experimentally demonstrated a new atom chip trapping system that allows the placement and high-resolution imaging of ultracold atoms within microns from any ≤100 μm-thin, UHV-compatible material, while also allowing sample exchange with minimal experimental downtime. The sample is not connected to the atom chip, allowing rapid exchange without perturbing the atom chip or laser cooling apparatus. Exchange of the sample and retrapping of atoms has been performed within a week turnaround, limited only by chamber baking. Moreover, the decoupling of sample and atom chip provides the ability to independently tune the sample temperature and its position with respect to the trapped ultracold gas, which itself may remain in the focus of a high-resolution imaging system. We confine 100-nK BECs of 104 87Rb atoms near a gold-mirrored 100-μm-thick silicon substrate. The substrate can be cooled to 35 K without use of a heat shield, while the atom chip, 120-μm away, remains at room temperature. Atoms may be imaged with 1-μm resolution and retrapped every 16 s, allowing rapid data collection. Straightforward improvements will allow us to push sample temperatures close to 4 K, and improve imaging resolution from 1 μm down to a few-100 nm, thereby providing 10 -9 Φ0 detection sensitivity. We will test the utility of this technique by imaging the magnetic fields emanating from electronic transport and domain percolation in several interesting examples of strongly correlated or topologically protected materials. STM, transport, and x-ray scattering experiments have, among others, revealed the existence of a quantum liquid crystal state in iron (pnictide) and cuprate superconductors. This strongly correlated state of matter could also be detected by imaging the fluctuating transport (spatially and in time) of electrons as the phase/regime boundary is crossed between the pnictide non-Fermi liquid (cuprate strange metal) and the pnictide magnetic phase (cuprate pseudogap regime). Our ability to image wide-area inhomogeneous current flow from room-temperature to <10 K will allow us to study the developing domain structure and transport near twin boundary interfaces through the T N ≈50–150 K nematic transition recently identified in bulk transport experiments by Ian Fisher's group in underdoped Fe-arsinide superconductors. Again, this highlights a main feature of our cryogenic atom chip microscope: the ability to image transport regardless of the sample temperature since the BEC, at nK temperatures, is transparent to blackbody radiation, even when held a microns from the surface.

36 MATERIALS SCIENCE↗

Exploring Atomic-Scale Interactions at the Interface of Reducible Oxide and Ruthenium Nanocatalyst for Ammonia Decomposition

Restructuring atomic-scale interfaces between noble metal nanoparticles and metal oxides provides a promising approach to enhancing catalytic properties. In this study, Ru nanoparticles were supported on CeO 2 , ZrO 2 , and HfO 2 via pyrolysis of MOFs under oxygen-suppressed high-temperature conditions. Despite its nearly ideal particle size (∼2.3 nm), the Ru–CeO 2 /C catalyst exhibited the lowest ammonia decomposition activity. X-ray absorption spectroscopy and DFT calculations revealed that electron transfer from Ru to CeO 2 formed positively charged Ru and partially reduced Ce 4+ , weakening the catalytic performance. In contrast, oxygen-deficient ZrO 2 and HfO 2 support donated electrons to Ru, preserving its metallic state. These findings demonstrate that the reducibility of oxide supports governs the direction and magnitude of interfacial charge transfer, directly tuning catalytic behavior. This study provides insights into the design of oxide-supported Ru catalysts for ammonia decomposition.

Catalysts↗

Oxygen-induced Al surface segregation in Al(x)Ga(1-x)As and the effect of Y overlayers on the oxidation of the Y/Al(x)Ga(1-x)As interface

The oxidation of Al(x)Ga(1-x)As (x = 0.15, AlGaAs) was studied by AES and XPS at 350 C and different oxygen exposures (up to 5 x 10 exp 4 L). Also studied were the effects of yttrium overlayers (theta = 3 ML) on the oxidation of the AlGaAs surface. Substantial oxygen-induced Al surface segregation has been observed for both yttriated and nonyttriated AlGaAs surfaces which increased with increasing oxygen exposure. Also observed is a significant Y-enhanced oxidation of the AlGaAs surface. Oxidation of the yttriated AlGaAs surface was found to be a factor of 4 greater than that of the nonyttriated surface. Also, while oxidation of the nonyttriated AlGaAs yielded mainly Al2O(x) (x less than 3) and only little Ga2O3, the yttriated AlGaAs surface oxide layer was principally Ga2O3 and stoichiometric Al2O3. However, both the yttriated and nonyttriated surfaces were found to contain metallic As within the oxide layer.

Mesarwi, A.↗

Fundamental Studies of Complex Oxides and Their Interfaces

This is a final close-out report for DOE contract DE-FG02-00ER45818 entitled “Fundamental Studies of Complex Oxides and their Interfaces” at the University of Missouri, Columbia, Missouri. It funded research in Condensed Matter Physics Basic Energy Science from July 1, 2000 through Nov 30, 2022. Presented below are: (i) An overview of the research accomplishments during the entire grant period with highlights of research results from the last funding period, (ii) A list of postdocs and graduate students that received support from this grant, and (iii) A list of original papers published through the duration of the grant with impact factor metrics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Tuning the Selectivity and Activity of Electrochemical Interfaces with Defective Graphene Oxide and Reduced Graphene Oxide

Engineered solid-liquid interfaces will play an important role in the development of future energy storage and conversion (ESC) devices. In the present study, defective graphene oxide (GO) and reduced graphene oxide (rGO) structures were used as engineered interfaces to tune the selectivity and activity of Pt disk electrodes. GO was deposited on Pt electrodes via the Langmuir-Blodgett technique, which provided compact and uniform GO films, and these films were subsequently converted to rGO by thermal reduction. Electrochemical measurements revealed that both GO and rGO interfaces on Pt electrodes exhibit selectivity toward the oxygen reduction reaction (ORR), but they do not have an impact on the activity of the hydrogen oxidation reaction in acidic environments. Scanning transmission electron microscopy at atomic resolution, along with Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM), revealed possible diffusion sites for H 2 and O 2 gas molecules and functional groups relevant to the selectivity and activity of these surfaces. Based on these insights, rGO interfaces are further demonstrated to exhibit enhanced activity for the ORR in nonaqueous environments and demonstrate the power of our ex situ engineering approach for the development of next-generation ESC devices.

36 MATERIALS SCIENCE↗

Engineering High- k /SiGe Interface with ALD Oxide for Selective GeO x Reduction

Suppression of electronic defects induced by GeO x at the high- k gate oxide/SiGe interface is critical for implementation of high-mobility SiGe channels in complementary metal-oxide-semiconductor (CMOS) technology. Theoretical and experimental studies have shown that a low defect density interface can be formed with an SiO x -rich interlayer on SiGe. Experimental studies in the literature indicate a better interface formation with Al 2 O 3 in contrast to HfO 2 on SiGe; yet, the mechanism behind this is not well understood. In this study, the mechanism of forming a low defect density interface between Al 2 O 3 /SiGe is discovered using atomic layer deposited (ALD) Al 2 O 3 insertion into or on top of ALD HfO 2 gate oxides. To elucidate the mechanism, correlations are made between the defect density determined by impedance measurements and the chemical and physical structures of the interface determined by high-resolution scanning transmission electron microscopy and electron energy loss spectroscopy. The compositional analysis reveals an SiO x rich interlayer for both Al 2 O 3 /SiGe and HfO 2 /SiGe interfaces with the insertion of Al 2 O 3 into or on top of the HfO 2 oxide. The data is consistent with the Al 2 O 3 insertion inducing decomposition of the GeO x from the interface to form an electrically passive, SiO x rich interface on SiGe. This mechanism demonstrates that nanolaminate gate oxide chemistry cannot be interpreted as resulting from a simple layer-by-layer ideal ALD process, because the precursor or its reaction products can diffuse through the oxide during growth and react at the semiconductor interface. This finding shows that in scaled CMOS, remote oxide ALD (oxide ALD on top of the gate oxide) can be used to suppress electronic defects at gate oxide semiconductor interfaces by oxygen scavenging.

36 MATERIALS SCIENCE↗

Insight into spin transport in oxide heterostructures from interface-resolved magnetic mapping

At interfaces between complex oxides, electronic, orbital and magnetic reconstructions may produce states of matter absent from the materials involved, offering novel possibilities for electronic and spintronic devices. Here we show that magnetic reconstruction has a strong influence on the interfacial spin selectivity, a key parameter controlling spin transport in magnetic tunnel junctions. In epitaxial heterostructures combining layers of antiferromagnetic LaFeO 3 (LFO) and ferromagnetic La 0.7 Sr 0.3 MnO 3 (LSMO), we find that a net magnetic moment is induced in the first few unit planes of LFO near the interface with LSMO. Using X-ray photoemission electron microscopy, we show that the ferromagnetic domain structure of the manganite electrodes is imprinted into the antiferromagnetic tunnel barrier, endowing it with spin selectivity. Finally, we find that the spin arrangement resulting from coexisting ferromagnetic and antiferromagnetic interactions strongly influences the tunnel magnetoresistance of LSMO/LFO/LSMO junctions through competing spin-polarization and spin-filtering effects.

36 MATERIALS SCIENCE↗

Acid–Base Chemistry of a Model IrO 2 Catalytic Interface

Iridium oxide (IrO 2 ) is one of the most efficient catalytic materials for the oxygen evolution reaction (OER), yet the atomic scale structure of its aqueous interface is largely unknown. Herein, the hydration structure, proton transfer mechanisms and acid-base properties of the rutile IrO 2 (110)-water interface are investigated using ab-initio based deep neural-network potentials and enhanced sampling simulations. The proton affinities of the different surface sites are characterized by calculating their acid dissociation constants, which yield a point of zero-charge in good agreement with experiments. A large fraction (≈ 80%) of adsorbed water dissociation is observed, together with a short lifetime (≈ 0.5 ns) of the resulting terminal hydroxy groups, due to rapid proton exchanges between adsorbed H 2 O and adjacent OH species. As a result, this rapid surface proton transfer supports the suggestion that the rate-determining step in the OER may not involve proton transfer across the double layer into solution, as indicated by recent experiments.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Potential-specific structure at the hematite-electrolyte interface

The atomic-scale structure of interfaces between metal oxides and aqueous electrolytes controls their catalytic, geochemical, and corrosion behavior. Measurements that probe these interfaces in situ provide important details of ion and solvent arrangements, but atomically precise structural models do not exist for common oxide-electrolyte interfaces far from equilibrium. Using a novel cell, we measured the structure of the hematite (a-Fe 2 O 3 ) (110$\bar{2}$)-electrolyte interface under controlled electrochemical bias using synchrotron crystal truncation rod X ray scattering. At increasingly cathodic potentials, charge-compensating protonation of surface oxygen groups increases the coverage of specifically bound water while adjacent water layers displace outwardly and became disordered. Returning to open circuit potential leaves the surface in a persistent metastable protonation state. The flux of current and ions at applied potential is thus regulated by a unique interfacial electrolyte environment, suggesting that electrical double layer models should be adapted to the dynamically changing interfacial structure far from equilibrium.

electrochemistry↗