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All sources NASA NTRS DOE OSTI

NASA NTRS2016

The NASA Electronic Parts and Packaging (NEPP) Program: An Overview

This presentation provides an overview of the NEPP Program. The NEPP Mission is to provide guidance to NASA for the selection and application of microelectronics technologies; Improve understanding of the risks related to the use of these technologies in the space environment; Ensure that appropriate research is performed to meet NASA mission assurance needs. NEPP's Goals are to provide customers with appropriate and cost-effective risk knowledge to aid in: Selection and application of microelectronics technologies; Improved understanding of risks related to the use of these technologies in the space environment; Appropriate evaluations to meet NASA mission assurance needs; Guidelines for test and application of parts technologies in space; Assurance infrastructure and support for technologies in use by NASA space systems.

Technology Evaluation↗

NASA NTRS2016

The NASA Electronic Parts and Packaging (NEPP) Program: An Overview

NASA Electronic Parts and Packaging (NEPP) Program↗

NASA NTRS1995

Clementine Engineering Experiments Program.

Spacecraft must survive and operate reliably in the space environment for long periods of time. Radiation, temperature variations, spacecraft charging, surface contamination, and micrometeoroids/space debris all present environmental challenges to spacecraft missions. The environmental issues associated with these effects require in-situ space experiments to properly quantify the environment and its effects. To obtain data on specific microelectronic and sensor systems in the space environment, several engineering experiments were developed for the Clementine spacecraft and the Clementine lunar transfer booster or Interstage Adapter Satellite (ISAS). These platforms allowed testing of advanced spacecraft microelectronic and sensor devices in a lunar transfer orbit that intersects Earth's radiation belts and debris environment and in interplanetary space where direct exposure to solar flares, Galactic Cosmic Rays, and micrometeoroids was possible. A suite of experiments was developed by the Naval Research Laboratory (NRL), the Jet Propulsion Laboratory (JPL), NASA Langley Research Center (LaRC), the Aerospace Corporation, and NASA Goddard Space Flight Center (GSFC) to investigate in detail specific radiation and environmental reliability issues. This paper presents an introduction to the issues being investigated, the instruments provided for the mission, and the rationale for the engineering program.

Spacecraft↗

NASA NTRS1997

Recent Radiation Effects Activities at JPL: Coping with COTS

The rediation effects and testing programs in place at the Jet Propulsion Laboratory support the insertion of traditional, advanced, and emerging microelectronic and photonic technologies in NASA systems through research and testing that enhances the radiation hardness assurance (RHA) of these technologies. With the decreasing availability of radiation hardened electronics and the new NASA paradigm of faster, more aggressive and less expensive space missions, there has been an increasing emphasis on using high performance commercial microelectronic parts and circuits in NASA spacecraft.

radiation↗

NASA NTRSDate not supplied

Learning From Failure: Boosting Cycling Endurance of Optical Phase Change Materials

Chalcogenide phase change materials (PCMs) are a unique class of compounds whose switchable optical and electronic properties have fueled an explosion of emerging applications in microelectronics and microphotonics. Key to any application is the ability of PCMs to reliably switch between crystalline and amorphous states over a large number of cycles. While this issue has been extensively studied in the case of microelectronic memories, current PCM-based optical devices suffer from much inferior endurance. To understand the failure mechanisms limiting endurance of PCMs specifically in microphotonic devices, we have developed an on-chip resistive micro-heater platform and an automatic multi-modal characterization system to analyze cycling performance of optical PCMs. Reversible switching of large-area PCM devices over 50,000 cycles was demonstrated.

Optical phase change material↗

DOE OSTI2019

Experimental Determination of the Sn-Cu-Ni Phase Diagram for Pb-Free Solder Applications

The rapid increase of scrapped electrical products disposed in landfill sites is significantly influencing the environment because of the composition of the associated components. This situation has been the stimulus for the international community to issue a directive to prohibit the use of Pb-containing solders in electronic devices and effectively ban such products on the market. The Sn-Cu-Ni has become increasingly significant as it is used in several solder alloys and more generally both Cu and Ni are common substrates that interact with Sn-based solders in microelectronic applications. However, there is currently an insufficient understanding of the phase equilibria and the associated phase diagrams of many Sn alloys. The present work implemented an experimental methodology to obtain high accuracy results for the phase equilibria between one liquid and one or two intermetallic compounds. The Sn-Cu-Ni and the associated Sn-Cu and Sn-Ni binary systems have been re-evaluated and compared with the literature. The liquidus and the invariant lines were determined for the Sn-Cu-Ni ternary at the temperatures ranges of between 240 °C and 270 °C. The result will contribute to filling phase equilibria data gaps in the Sn-rich corner of the Sn-Cu-Ni alloy system.

36 MATERIALS SCIENCE↗

DOE OSTI2015

Microstructure evolution of Ag–8Au–3Pd alloy wire during electromigration

As the continuous shrinkage of the interconnect line width in microelectronics devices, there is a growing concern about the electromigration (EM) failure of bonding wire. In addition, an innovative Ag–8Au–3Pd alloy wire has shown promise as an economical substitute for gold wire interconnects due to the cost pressure of gold in the last decade. In present study of the Ag–8Au–3Pd alloy wire, the surface diffusion occupied the dominant position during EM failure, and the activation energy was found to be 0.61 eV. In order to reveal the failure mechanism, the cross-sections of the Ag–8Au–3Pd alloy wire during EM were prepared by focused ion beam (FIB) micro-machining for electron backscatter diffraction (EBSD) analysis. The microstructure evolution of the Ag–8Au–3Pd alloy wire was characterized by the grain size and grain boundary. As a result, the EM failure originates in the atom transportation, which causes grain size increasing and atom diffusion on the wire surface. - Highlights: • The activation energy of Ag–8Au–3Pd alloy wire was obtained as 0.61 eV. • During EM, the silver atoms diffused from negative to the positive terminal on the wire surface. • The microstructure (grain size and grain boundary) was characterized by FIB-EBSD. • During EM, the atom transportation was found to cause grain size growth and atom diffusion on the wire surface.

36 MATERIALS SCIENCE↗

DOE OSTI2015

Note: Fabrication of a fast-response and user-friendly environmental chamber for atomic force microscopes

The atomic force microscope is one of the most widespread tools in science, but many suppliers do not provide a competitive solution to make experiments in controlled atmospheres. Here, we provide a solution to this problem by fabricating a fast-response and user-friendly environmental chamber. We corroborate the correct functioning of the chamber by studying the formation of local anodic oxidation on a silicon sample (biased under opposite polarities), an effect that can be suppressed by measuring in a dry nitrogen atmosphere. The usefulness of this chamber goes beyond the example here presented, and it could be used in many other fields of science, including physics, mechanics, microelectronics, nanotechnology, medicine, and biology.

36 MATERIALS SCIENCE↗

DOE OSTI2015

Quantitative analysis of doped/undoped ZnO nanomaterials using laser assisted atom probe tomography: Influence of the analysis parameters

In the last decade, atom probe tomography has become a powerful tool to investigate semiconductor and insulator nanomaterials in microelectronics, spintronics, and optoelectronics. In this paper, we report an investigation of zinc oxide nanostructures using atom probe tomography. We observed that the chemical composition of zinc oxide is strongly dependent on the analysis parameters used for atom probe experiments. It was observed that at high laser pulse energies, the electric field at the specimen surface is strongly dependent on the crystallographic directions. This dependence leads to an inhomogeneous field evaporation of the surface atoms, resulting in unreliable measurements. We show that the laser pulse energy has to be well tuned to obtain reliable quantitative chemical composition measurements of undoped and doped ZnO nanomaterials.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2015

Inorganic/organic nanocomposites: Reaching a high filler content without increasing viscosity using core-shell structured nanoparticles

Extensive research is being conducted on the development of inorganic/organic nanocomposites for a wide variety of applications in microelectronics, biotechnologies, photonics, adhesives, or optical coatings. High filler contents are usually required to fully optimize the nanocomposites properties. However, numerous studies demonstrated that traditional composite viscosity increases with increasing the filler concentration reducing therefore significantly the material processability. In this work, we synthesized inorganic/organic core-shell nanocomposites with different shell thicknesses. By reducing the shell thickness while maintaining a constant core size, the nanoparticle molecular mass decreases but the nanocomposite filler fraction is correlatively increased. We performed viscosity measurements, which clearly highlighted that intrinsic viscosity of hybrid nanoparticles decreases as the molecular mass decreases, and thus, as the filler fraction increases, as opposed to Einstein predictions about the viscosity of traditional inorganic/polymer two-phase mixtures. This exceptional behavior, modeled by Mark-Houwink-Sakurada equation, proves to be a significant breakthrough for the development of industrializable nanocomposites with high filler contents.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2016

Influence of temporary organic bond nature on the properties of compacts and ceramics

This work contains results of investigation of obtaining high thermally conductive ceramics from commercial powders of aluminum nitride and yttrium oxide by the method of monoaxial compaction of granulate. The principal scheme of preparation is proposed and technological properties of granulate are defined. Compaction conditions for simple items to use as heat removal in microelectronics and power electrical engineering have been established. Investigations of thermophysical properties of obtained ceramics and its structure by the XRD and SEM methods have been carried out. Ceramics with thermal conductivity from 172 to 174 W/m·K has been obtained as result of this work.

36 MATERIALS SCIENCE↗

DOE OSTI2016

High-speed modulator with interleaved junctions in zero-change CMOS photonics

A microring depletion modulator is demonstrated with T-shaped lateral p-n junctions used to realize efficient modulation while maximizing the RC limited bandwidth. The device having a 3 dB bandwidth of 13 GHz has been fabricated in a standard 45 nm microelectronics CMOS process. The cavity has a linewidth of 17 GHz and an average wavelength-shift of 9 pm/V in reverse-bias conditions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2016

Flake like V{sub 2}O{sub 5} nanoparticles for ethanol sensing at room temperature

The versatile redox property of vanadium oxide explores it in various applications like catalysis, electrochromism, electrochemistry, energy storage, sensors, microelectronics, batteries etc., In this present work, vanadium oxide was prepared via hydrothermal route followed by calcination. The structural and lattice parameters were analysed from the powder X-ray diffraction (XRD) pattern. The morphology and the composition of the sample were obtained from Field emission Scanning electron microscopic (FeSEM) and Energy Dispersive X-ray (EDAX) Spectrometric analysis respectively. The sensitivity, response – recovery time of the sample towards ethanol (0 ppm – 300 ppm) sensing at room temperature was measured and the present investigation on vanadium oxide nanoparticles over the flakes shows better sensitivity (30%) at room temperature.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2016

Low-power resistive random access memory by confining the formation of conducting filaments

Owing to their small physical size and low power consumption, resistive random access memory (RRAM) devices are potential for future memory and logic applications in microelectronics. In this study, a new resistive switching material structure, TiO{sub x}/silver nanoparticles/TiO{sub x}/AlTiO{sub x}, fabricated between the fluorine-doped tin oxide bottom electrode and the indium tin oxide top electrode is demonstrated. The device exhibits excellent memory performances, such as low operation voltage (<±1 V), low operation power, small variation in resistance, reliable data retention, and a large memory window. The current-voltage measurement shows that the conducting mechanism in the device at the high resistance state is via electron hopping between oxygen vacancies in the resistive switching material. When the device is switched to the low resistance state, conducting filaments are formed in the resistive switching material as a result of accumulation of oxygen vacancies. The bottom AlTiO{sub x} layer in the device structure limits the formation of conducting filaments; therefore, the current and power consumption of device operation are significantly reduced.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2016

Auger generation as an intrinsic limit to tunneling field-effect transistor performance

Many in the microelectronics field view tunneling field-effect transistors (TFETs) as society's best hope for achieving a >10× power reduction for electronic devices; however, despite a decade of considerable worldwide research, experimental TFET results have significantly underperformed simulations and conventional MOSFETs. To explain the discrepancy between TFET experiments and simulations, we investigate the parasitic leakage current due to Auger generation, an intrinsic mechanism that cannot be mitigated with improved material quality or better device processing. We expose the intrinsic link between the Auger and band-to-band tunneling rates, highlighting the difficulty of increasing one without the other. From this link, we show that Auger generation imposes a fundamental limit on ultimate TFET performance.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2016

Direct view at colossal permittivity in donor-acceptor (Nb, In) co-doped rutile TiO{sub 2}

Topical observations of colossal permittivity (CP) with low dielectric loss in donor-acceptor cations co-doped rutile TiO{sub 2} have opened up several possibilities in microelectronics and energy-storage devices. Yet, the precise origin of the CP behavior, knowledge of which is essential to empower the device integration suitably, is highly disputed in the literature. From spectromicroscopic approach besides dielectric measurements, we explore that microscopic electronic inhomogeneities along with the nano-scale phase boundaries and the low temperature polaronic relaxation are mostly responsible for such a dielectric behavior, rather than electron-pinned defect-dipoles/grain-boundary effects as usually proposed. Donor-acceptor co-doping results in a controlled carrier-hopping inevitably influencing the dielectric loss while invariably upholding the CP value.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Thermal stability of antiferroelectric-like Al:HfO 2 thin films with TiN or Pt electrodes

HfO 2 -based antiferroelectric-like thin films are increasingly being considered for commercial devices. However, even with initial promise, the temperature sensitivity of electrical properties such as loss tangent and leakage current remains unreported. 50 nm thick, 4 at. % Al-doped HfO 2 thin films were synthesized via atomic layer deposition with both top and bottom electrodes being TiN or Pt. A study of their capacitance vs temperature showed that the Pt/Al:HfO 2 /Pt had a relative dielectric permittivity of 23.30 ± 0.06 at room temperature with a temperature coefficient of capacitance (TCC) of 78 ± 86 ppm/°C, while the TiN/Al:HfO 2 /TiN had a relative dielectric permittivity of 32.28 ± 0.14 at room temperature with a TCC of 322 ± 41 ppm/°C. The capacitance of both devices varied less than 6% over 1 to 1000 kHz from –125 to 125 °C. Both capacitors maintained loss tangents under 0.03 and leakage current densities of 10 –9 –10 –7 A/cm 2 between –125 and 125 °C. The TiN/Al:HfO 2 /TiN capacitor maintained an energy storage density (ESD) of 18.17 ± 0.79 J/cm 3 at an efficiency of 51.79% ± 2.75% over the –125 to 125 °C range. The Pt/Al:HfO 2 /Pt capacitor also maintained a stable ESD of 9.83 ± 0.26 J/cm 3 with an efficiency of 62.87% ± 3.00% over the same temperature range. Finally, such low losses in both capacitors along with their thermal stability make antiferroelectric-like, Al-doped HfO 2 thin films a promising material for temperature-stable microelectronics.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Thermoelectric coolers for high-power-density 3D electronics heat management

Future advancements in three-dimensional (3D) electronics require robust thermal management methodology. Thermoelectric coolers (TECs) are reliable and solid-state heat pumping devices with high cooling capacity that can meet the requirements of emerging 3D microelectronic devices. In this work, we first provide the design of TECs for electronics cooling using a computational model and then experimentally validate the main predictions. Key device parameters such as device thickness, leg density, and contact resistance were studied to understand their influence on the performance of TECs. Our results show that it is possible to achieve high cooling power density through optimization of TE leg height and packing density. Scaling of TECs is shown to provide ultra-high cooling power density.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗