Anomalous electrical transport behavior in the vicinity of the first-order magnetostructural transition in the giant magnetocaloric Gd 4 ScGe 4
Here, magnetic, specific heat, and electrical transport measurements of Gd 4 ScGe 4 single crystals reveal sharp, discontinuous, nearly anhysteretic first-order magnetostructural transformation at $T_C$ = 63 K. The electrical resistivity exhibits two distinct regions where it increases with decreasing temperature: between $T_C$ and 120 K, as well as below 3 K; electronic transport remains conventionally metallic at all other measured temperatures, up to 325 K. The dispersion of charge carriers due to electron-paramagnon scattering is the likely reason for the observed anomalous transport above $T_C$. Additionally, the existence of intermediate lattice states near the transition recognized by the spike in the interslab Ge-Ge distances is expected to reduce the mean free path of the electrons contributing to the unusual behavior of the electrical resistivity between $T_C$ and 120 K. Beyond conventional electronic and lattice terms, the third component of likely magnetic origin contributes to the low-temperature heat capacity; the presence of spin waves may be responsible for the increased electron-magnon scattering below 3 K. Minor magnetocrystalline anisotropy is observed with the b axis as the easy magnetization axis in Gd 4 ScGe 4 . A negative deviation from linearity in the temperature dependence of the inverse magnetic susceptibility is detected below 150 K.