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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 415 records · Page 23
All sourcesNASA NTRSDOE OSTI
NASA NTRS2014

Absorption Voltages and Insulation Resistance in Ceramic Capacitors with Cracks

Time dependence of absorption voltages (V(sub abs)) in different types of low-voltage X5R and X7R ceramic capacitors was monitored for a maximum duration of hundred hours after polarization. To evaluate the effect of mechanical defects on V(sub abs)), cracks in the dielectric were introduced either mechanically or by thermal shock. The maximum absorption voltage, time to roll-off, and the rate of voltage decrease are shown to depend on the crack-related leakage currents and insulation resistance in the parts. A simple model that is based on the Dow equivalent circuit for capacitors with absorption has been developed to assess the insulation resistance of capacitors. Standard measurements of the insulation resistance, contrary to the measurements based on V(sub abs)), are not sensitive to the presence of mechanical defects and fail to reveal capacitors with cracks.

ceramic capacitor↗
NASA NTRS2016

Absorption Voltages and Insulation Resistance in Ceramic Capacitors with Cracks

Time dependence of absorption voltages (Vabs) in different types of low-voltage X5R and X7R ceramic capacitors was monitored for a maximum duration of hundred hours after polarization. To evaluate the effect of mechanical defects on Vabs, cracks in the dielectric were introduced either mechanically or by thermal shock. The maximum absorption voltage, time to roll-off, and the rate of voltage decrease are shown to depend on the crack-related leakage currents and insulation resistance in the parts. A simple model that is based on the Dow equivalent circuit for capacitors with absorption has been developed to assess the insulation resistance of capacitors. Standard measurements of the insulation resistance, contrary to the measurements based on Vabs, are not sensitive to the presence of mechanical defects and fail to reveal capacitors with cracks. Index Terms: Ceramic capacitor, insulation resistance, dielectric absorption, cracking.

cracking↗
NASA NTRS2017

Degradation and ESR Failures in MnO2 Chip Tantalum Capacitors

Equivalent series resistance (ESR) of chip tantalum capacitors determines the rate of energy delivery and power dissipation thus affecting temperature and reliability of the parts. Employment of advanced capacitors with reduced ESR decreases power losses and improves efficiency in power systems. Stability of ESR is essential for correct operations of power units and might cause malfunctioning and failures when ESR becomes too high or too low. Several cases with ESR values in CWR29 capacitors exceeding the specified limit that were observed recently raised concerns regarding environmental factors affecting ESR and the adequacy of the existing screening and qualification testing. In this work, results of stress testing of various types of military and commercial capacitors obtained over years by GSFC test lab and NEPP projects that involved ESR measurements are described. Environmental stress tests include testing in humidity and vacuum chambers, temperature cycling, long-term storage at high temperatures, and various soldering simulation tests. Note that in many cases parts failed due to excessive leakage currents or reduced breakdown voltages. However, only ESR-related degradation and failures are discussed. Mechanisms of moisture effect are discussed and recommendations to improve screening and qualification system are suggested.

Equivalent Series Resistance (ESR)↗
NASA NTRS2017

Micron MT29F128G08AJAAA 128GB Asynchronous Flash Memory Total Ionizing Dose Characterization Test Report

The purpose of this test was to characterize the Micron MT29F128G08AJAAAs parameter degradation for total dose response and to evaluate and compare lot date codes for sensitivity. In the test, the device was exposed to both low dose and high dose rate (HDR) irradiations using gamma radiation. Device parameters such as leakage currents, quantity of upset bits and overall chip and die health were investigated to determine which lot is more robust.

Flash Memory↗
NASA NTRS2017

Packaging Technology for Dielectric-Coating-Less Heavy Ion Radiation Testing of High-Voltage (HV) Electronic Parts

Testing high voltage (HV) electronic parts (greater than 300 V) for sudden event effects (SEE) caused by cosmic rays in the space environment, consisting of energetic heavy-ions, and neutron radiation in the upper atmosphere is a crucial step towards using these parts in spacecraft and aircraft. Due to the nature of cosmic radiation and neutrons, electronic parts are tested for SEE without any packaging and/or shielding over the top of the device. In the case of commercial HV parts, the top of the packaging is etched off and then a thin dielectric coating is placed over the part in order to avoid electrical arcing between the device surface and wire bonds and other components. Even though the effects of the thin dielectric layer on SEE testing can be accounted for, the dielectric layer significantly hinders post testing failure analysis. Replicating the test capability of state-of-the-art packaging while eliminating the need for post radiation test processing of the die surface (that obscures failure analysis) is the goal. To that end, a new packaging concept for HV parts has been developed that requires no dielectric coating over the part. Testing of prototype packages used with Schottky diodes (rated at 1200V) has shown no electrical arcing during testing and leakage currents during reverse bias testing are within the manufactures specifications.

High Voltage↗
NASA NTRS2018

Solid State Ephemeral Electric Potential and Electric Field Sensor

Systems, methods, and devices of the various embodiments provide a field effect transistor (FET) that controls equilibrium by reversing the effects of leakage currents affecting the gate response of the FET by using an equilibrium pump electrode. The equilibrium reversing gate FETs (ergFETs) of the various embodiments, may include an equilibrium pump electrode located within a non-conducting gap. The ergFETs of the various embodiments may provide solid state ephemeral electric potential and electric field sensor systems and methods for measuring ephemeral electric potentials and electric fields.

Generazio, Edward R.↗
NASA NTRS2019

ISSI IS46DR16640B-25DBA25 DDR2 SDRAM Total Ionizing Dose Characterization Test Report

The purpose of this testing is to characterize the ISSI IS46DR16640B-25DBA25 parameter degradation for total dose response. This test’s purpose is to evaluate and compare lot date codes for sensitivity. In the test, the device is exposed to both low dose and high dose rate (HDR) irradiations using gamma radiation. Device parameters such as leakage currents, quantity of upset bits or addresses, and overall chip and die health are investigated to determine which lot is more robust. These parameters directly affect the functionality of the memory within a system and may determine thresholds necessary to mitigate failure.

Total Ionizing Dose (TID)↗
NASA NTRS2017

Reliability Issues with PME and BME Ceramic Capacitors

Exposure of chip MnO2 tantalum capacitors to humid environments might result in increased ESR, leakage currents, and first turn-on failures. However, there is a lack of literature data on the effect of moisture on reverse bias behavior of the parts. The presence of moisture can also result in pop-corning when a high water vapor pressure develops when moisture absorbed in pores of tantalum slugs vaporizes instantly during soldering process resulting in damage to capacitors. A study of kinetics of moisture ingress to and release from active elements of capacitors would allow a better understanding of degradation mechanisms and is important for preventing failures. In this work, a technique for investigation of moisture sorption and desorption in solid chip tantalum capacitors that employs tantalum slugs as a humidity sensor have been developed and kinetics of the process analyzed for different types of capacitors at temperatures from room to 125 C. A model that relates diffusion characteristics of polymer cases and size of the slugs to characteristic times of moisture sorption has been developed. A strong effect of moisture on long-term degradation of reverse bias currents in MnO2 cathode capacitors has been demonstrated and physical mechanisms discussed.

degradation↗
NASA NTRS2019

Effect of Environments on Parametric Degradation in Polymer Tantalum Capacitors

Chip polymer tantalum capacitors (CPTCs) are more sensitive to environments compared to conventional, MnO2 cathode capacitors. Contrary to MnO2 capacitors, CPTCs can degrade with time of storage even in dry conditions, that might limit their use for space applications. Performance of CPTCs depends on the amount of moisture in the slug, and varies with time of storage after manufacturing. For this reason, characteristics of the parts and qualification testing should be carried out after preconditioning to stabilize moisture content. This work analyzes kinetics of moisture sorption and desorption in different types of CPTCs from three manufacturers. Variations of capacitance, dissipation factor, ESR, and leakage currents caused by exposure to humid, dry, and radiation environments are discussed. Examples of the effects of long-term exposure to vacuum and humid environments at 85%RH are presented. Temperature dependencies of the characteristic times of moisture diffusion allow for assessments of the bake-out times that are necessary to avoid pop-corning failures after soldering and to precondition parts before qualification testing.

Teverovsky, Alexander↗
NASA NTRS2017

Kinetics of Moisture Sorption and Reverse Bias Degradation in Chip Tantalum Capacitors

Exposure of chip MnO2 tantalum capacitors to humid environments might result in increased ESR, leakage currents, and first turn-on failures. However, there is a lack of literature data on the effect of moisture on reverse bias behavior of the parts. The presence of moisture can also result in pop-corning when a high water vapor pressure develops when moisture absorbed in pores of tantalum slugs vaporizes instantly during soldering process resulting in damage to capacitors. A study of kinetics of moisture ingress to and release from active elements of capacitors would allow a better understanding of degradation mechanisms and is important for preventing failures. In this work, a technique for investigation of moisture sorption and desorption in solid chip tantalum capacitors that employs tantalum slugs as a humidity sensor have been developed and kinetics of the process analyzed for different types of capacitors at temperatures from room to 125 ºC. A model that relates diffusion characteristics of polymer cases and size of the slugs to characteristic times of moisture sorption has been developed. A strong effect of moisture on long-term degradation of reverse bias currents in MnO2 cathode capacitors has been demonstrated and physical mechanisms discussed.

Teverovsky, Alexander↗
NASA NTRS2017

Kinetics of Moisture Sorption and Reverse Bias Degradation in Chip Tantalum Capacitors

Exposure of chip MnO2 tantalum capacitors to humid environments might result in increased ESR, leakage currents, and first turn-on failures. However, there is a lack of literature data on the effect of moisture on reverse bias behavior of the parts. The presence of moisture can also result in pop-corning when a high water vapor pressure develops when moisture absorbed in pores of tantalum slugs vaporizes instantly during soldering process resulting in damage to capacitors. A study of kinetics of moisture ingress to and release from active elements of capacitors would allow a better understanding of degradation mechanisms and is important for preventing failures. In this work, a technique for investigation of moisture sorption and desorption in solid chip tantalum capacitors that employs tantalum slugs as a humidity sensor have been developed and kinetics of the process analyzed for different types of capacitors at temperatures from room to 125 C. A model that relates diffusion characteristics of polymer cases and size of the slugs to characteristic times of moisture sorption has been developed. A strong effect of moisture on long-term degradation of reverse bias currents in MnO2 cathode capacitors has been demonstrated and physical mechanisms discussed.

Teverovsky, Alexander↗
NASA NTRS2017

Reliability Issues with PME and BME Ceramic Capacitors

This work is a review of reliability issues specific for low-voltage precious metal electrode (PME) and base metal electrode (BME) multilayer ceramic capacitors (MLCC). A special attention is given to degradation and failures in capacitors with defects, in particular with cracks. Temperature and voltage reliability acceleration factors have been calculated based on approximation of distributions of degradation rates of leakage currents using a general log-linear Weibull model. Results show a substantial difference in behavior of BME and PME capacitors with defects. Mechanisms of degradation and failures in humid and dry environments and risks of overstressing capacitors during highly accelerated life testing (HALT) are discussed.

Teverovsky, Alexander↗
NASA NTRS2019

OMH3075 Hall Effect Sensor Total Ionizing Dose Test Report

The purpose of this test was to characterize the OMH3075 Hall Effects sensor degradation for total dose response. The device samples were exposed to low dose irradiations using gamma radiation. Device parameters such as magnetic operating points, leakage currents, supply currents, and rise and fall times were investigated.

Forney, James↗
NASA NTRS2018

MT29F512G08AUCBBH8-6IT:B NAND Flash Memory Total Ionizing Dose Test Report

The purpose of this test was to characterize the Micron 512 GB NAND (MT29F512G08AUCBBH8-6IT:B) flash memory parameter degradation for total dose response. In the test, the device was exposed to high dose rate (HDR) irradiations using gamma radiation. Device parameters such as leakage currents, quantity of upset bits and overall chip and die health were investigated.

TID↗
NASA NTRS2021

Screening and Qualification of BME Feedthrough Capacitors for a Space Project

Surface mount technology feedthrough ceramic capacitors are gaining popularity in Hi-Rel systems due to small size and great filtering characteristics. In this work, BME feedthrough capacitors compliant with AEC-Q200 requirements have been evaluated, screened and qualified for a space project. Evaluation included analysis of the effect of post-soldering thermal shocks, temperature dependencies of leakage currents, distribution of breakdown voltages, assessments of high-current capability, and thermal resistance of the parts. The parts have been screened and qualified at conditions close to the military requirements for ceramic capacitors. No failures were detected during screening including burning-in, but two samples failed during monitored 2000 hour life testing at 125C and two times rated voltage. Failure analysis revealed manufacturing defects that required additional analysis of screening and qualification test conditions. Highly accelerated life testing (HALT) has been carried out to assess reliability acceleration factors and the probability of failure at the use conditions. An approach to selection of adequate burning-in and life test conditions is discussed.

Alexander Teverovsky↗
NASA NTRS2021

Screening and Qualification of BME Feedthrough Capacitors for a Space Project

Surface mount technology feedthrough ceramic capacitors are gaining popularity in Hi-Rel systems due to small size and great filtering characteristics. In this work, BME feedthrough capacitors compliant with AEC-Q200 requirements have been evaluated, screened and qualified for a space project. Evaluation included analysis of the effect of post-soldering thermal shocks, temperature dependencies of leakage currents, distribution of breakdown voltages, assessments of high-current capability, and thermal resistance of the parts. The parts have been screened and qualified at conditions close to the military requirements for ceramic capacitors. No failures were detected during screening including burning-in, but two samples failed during monitored 2000 hour life testing at 125C and two times rated voltage. Failure analysis revealed manufacturing defects that required additional analysis of screening and qualification test conditions. Highly accelerated life testing (HALT) has been carried out to assess reliability acceleration factors and the probability of failure at the use conditions. An approach to selection of adequate burning-in and life test conditions is discussed.

Alexander Teverovsky↗
NASA NTRS2022

Si5345, SY88422L, LT3482, and MSK130 components Total Ionizing Dose Test Report

The purpose of this test was to characterize the SI-5345, SY88422L, LT3482 and MSK130 parameter degradation for total dose response. The components are associated with REAG ID #21-024. In the test, each device was exposed to high dose rate (HDR) irradiation using gamma radiation. Device parameters such as leakage currents, timing, and overall chip health were investigated. These devices were tested for an interstellar mission on a trajectory between 0.9 AU and 5.3 AU with a 2.5-year mission, yielding an expected overall dose of 29 krad(Si)behind 1 mm of aluminum shielding (at 95% confidence; environment and dose determined through SPENVIS). This test report gives an initial look at candidate parts. Extremely small sample sizes (only 1 or 2 devices tested) do not allow consideration of part-to-part variability. High dose rates were used despite LT3482 and MSK130 having potential enhanced low dose rate sensitivity (ELDRS). Care should be taken in interpreting results given these limitations.

Total Ionizing Dose (TID)↗