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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 415 records · Page 23
All sourcesNASA NTRSDOE OSTI
NASA NTRS1972

Numerical method and FORTRAN program for the solution of an axisymmetric electrostatic collector design problem

The numerical calculation is described of the steady-state flow of electrons in an axisymmetric, spherical, electrostatic collector for a range of boundary conditions. The trajectory equations of motion are solved alternately with Poisson's equation for the potential field until convergence is achieved. A direct (noniterative) numerical technique is used to obtain the solution to Poisson's equation. Space charge effects are included for initial current densities as large as 100 A/sq cm. Ways of dealing successfully with the difficulties associated with these high densities are discussed. A description of the mathematical model, a discussion of numerical techniques, results from two typical runs, and the FORTRAN computer program are included.

Reese, O. W.↗
NASA NTRS1982

An EBIC study of dislocation networks in unprocessed and unprocessed web silicon ribbon

Experimental techniques for the preparation of electron beam induced current samples of Web-dentritic silicon are described. Both as grown and processed material were investigated. High density dislocation networks were found close to twin planes in the bulk of the material. The electrical activity of these networks is reduced in processed material.

Fieldler, F. S.↗
NASA NTRS1982

Dynamical features of moving double layers

Numerical simulations of the dynamics of double layers that form in response to an applied potential drop across a plasma are carried out for plasmas of lengths much greater than previously considered. The evolution of finite-size plasmas of lengths 100, 200 and 400 Debye lengths at the low-potential end of the simulation region was followed by the solution of the Vlasov and Poisson equations. Results show that the double layer moves towards the high-potential side of the layer, at a speed directly dependent on the length of the plasma. The moving double layer is accompanied by a moving density front which is similar to an ion acoustic shock created by the expansion of a high-density plasma into a low-density plasma, as well as plasma heating and evacuation, electron and ion current interruptions and recovery. Double layer formation, motion, and accompanying phenomena are found to repeat periodically. Results are in good agreement with laboratory experiments, and may be used to explain certain phenomena observed in auroral plasmas.

Singh, N.↗
NASA NTRS1987

Enhanced current flow through a plasma cloud by induction of plasma turbulence

Electrodynamic tethers have been proposed as a means of generating power in low earth orbit. One of the limitations on the power generated is the relatively low electron current that can be collected. It is proposed that the electron current can be significantly enhanced by means of current induced plasma turbulence in a plasma cloud around the collecting anode. This is examined for the specific case of lower hybrid turbulence. An important conclusion is that the use of plasma clouds in the ionosphere will entail a high impedance (no instability) and a low impedance (lower hybrid instability) mode of operation depending on the current density.

Hastings, D. E.↗
NASA NTRS1997

OMC Compressor Case

This report summarizes efforts expended in the development of an all-composite compressor case. Two pre-production units have been built, one utilizing V-CAP and one utilizing AFR-700B resin systems. Both units have been rig tested at elevated temperatures well above design limit loads. This report discusses the manufacturing processes, test results, and Finite Element Analysis performed. The V-CAP unit was funded by NASA-Lewis Research Center in 1994 under contract number NAS3- 27442 for Development of an All-Composite OMC Compressor Case. This contract was followed by an Air Force study in 1996 to build and identical unit using the AFR-700B resin system in place of the V-CAP system. The second compressor case was funded under U.S. Air Force contract F33615-93-D-5326, Advanced Materials for Aerospace Structures Special Studies (AMAS3), Delivery Order 0021 entitled "Advanced Polymeric Composite Materials and Structures Technology for Advanced High Temperature Gas Turbine Engines.' Initial studies using the V-CAP resin system were undertaken in 1993 under a NASA Lewis contract (NAS3-26829). A first prototype unit was developed in a joint program between Textron-Lycoming (now Allied Signal) and Brunswick (now Lincoln Composites). This unit included composite end closures using low density, high temperature molded end closures. The units was similar in size and shape to a titanium case currently used on the PT-21 0 engine and was funded as part of the integrated High Performance Turbine Engine Technology (EHPTET) initiative of DOD and NASA.

Humphrey, W. Donald↗
NASA NTRS1996

Silicon Carbide High-Temperature Power Rectifiers Fabricated and Characterized

The High Temperature Integrated Electronics and Sensors (HTIES) team at the NASA Lewis Research Center is developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high power, and/or high-radiation conditions will enable significant improvements to a far ranging variety of applications and systems. These improvements range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. In the case of jet engines, uncooled operation of 300 to 600 C SiC power actuator electronics mounted in key high-temperature areas would greatly enhance system performance and reliability. Because silicon cannot function at these elevated temperatures, the semiconductor device circuit components must be made of SiC. Lewis' HTIES group recently fabricated and characterized high-temperature SiC rectifier diodes whose record-breaking characteristics represent significant progress toward the realization of advanced high-temperature actuator control circuits. The first figure illustrates the 600 C probe-testing of a Lewis SiC pn-junction rectifier diode sitting on top of a glowing red-hot heating element. The second figure shows the current-versus voltage rectifying characteristics recorded at 600 C. At this high temperature, the diodes were able to "turn-on" to conduct 4 A of current when forward biased, and yet block the flow of current ($quot;turn-off") when reverse biases as high as 150 V were applied. This device represents a new record for semiconductor device operation, in that no previous semiconductor electronic device has ever simultaneously demonstrated 600 C functionality, and 4-A turn-on and 150-V rectification. The high operating current was achieved despite severe device size limitations imposed by present-day SiC wafer defect densities. Further substantial increases in device performance can be expected when SiC wafer defect densities decrease as SiC wafer production technology matures.

Source record↗
NASA NTRS2010

Visual Data Comm: A Tool for Visualizing Data Communication in the Multi Sector Planner Study

Data comm is a new technology proposed in future air transport system as a potential tool to provide comprehensive data connectivity. It is a key enabler to manage 4D trajectory digitally, potentially resulting in improved flight times and increased throughput. Future concepts with data comm integration have been tested in a number of human-in-the-loop studies but analyzing the results has proven to be particularly challenging because future traffic environment in which data comm is fully enabled has assumed high traffic density, resulting in data set with large amount of information. This paper describes the motivation, design, current and potential future application of Visual Data Comm (VDC), a tool for visualizing data developed in Java using Processing library which is a tool package designed for interactive visualization programming. This paper includes an example of an application of VDC on data pertaining to the most recent Multi Sector Planner study, conducted at NASA s Airspace Operations Laboratory in 2009, in which VDC was used to visualize and interpret data comm activities

Lee, Hwasoo Eric↗
NASA NTRS2018

Fabrication of a Hybrid Transition Edge Sensor Array for Lynx

Lynx is a proposed NASA X-Ray telescope flight mission aimed at achieving state-of-the-art angular and energy resolution with a 100 kilopixel array to probe the hot energetic young universe in unprecedented detail. To achieve these goals, our team plans on leveraging our current work in development of the focal plane for the Athena X-Ray Integral Field Unit (X-IFU) while advancing the state-of-the-art in transition edge sensor (TES) X-ray detector technology. The TES is an optimal technology for achieving both high energy and fine angular resolution at the same time because pixel features can be made extremely small and the absorber which dominates the heat capacity can be tuned to meet resolution requirements. Specifically, the proposed mission concept calls for a hybrid detector of three different arrays fabricated in the same planar process in one focal plane and optimized for different science goals. The main arrays consist of 5x5 hydras, 25 pixels of 4 micron thick Au absorbers each with a different thermal link to one common TES. The outer array has absorbers on a 50-micron pitch for most of the 5 arc-minute field-of-view, and the inner array has 25-micron absorbers for the central 1 arc-minute region. A high resolution array consisting of single pixel 1 micron thick Au absorbers on 50-micron pitch will lie off to the side. Reading out an array of this magnitude will likely require improvements in indium bump bonding to superconducting flexible wiring. Fabrication of absorbers of two different sizes requires electroplating through a photoresist mold by careful tuning of the current density to achieve uniform flat absorbers on a fine pitch scale, followed by ion milling to yield narrow streets separating the pixels while preserving high quantum efficiency. We report on progress made at fabricating the hybrid array with different absorber sizes and thicknesses. Further, we also report on ongoing work to adequately heat sink the pixels with backside wire bonding and copper coating. We also report on work to improve detector pixel yield and top side indium bump bonding to flexible wiring.

Focal plane array↗
NASA NTRS1994

Mechanisms of anode power deposition in a low pressure free burning arc

Anode power deposition is a dominant power loss mechanism for arc jets and MPD thrusters. In this study, a free burning arc experiment was operated at pressures and current densities similar to those in arc jets and MPD thrusters in an attempt to identify the physics controlling this loss mechanism. Use of a free burning arc allowed for the isolation of independent variables controlling anode power deposition and provided a convenient and flexible way to cover a broad range of currents, anode surface pressures, and applied magnetic field strengths and orientations using an argon gas. Test results showed that anode power deposition decreased with increasing anode surface pressure up to 6.7 Pa (0.05 torr) and then became insensitive to pressure. Anode power increased with increasing arc current while the electron number density near the anode surface increased linearity. Anode power also increased with increasing applied magnetic field strength due to an increasing anode fall voltage. Applied magnetic field orientation had an effect only at high currents and low anode surface pressures, where anode power decreased when applied field lines intercepted the anode surface. The results demonstrated that anode power deposition was dominated by the current carrying electrons and that the anode fall voltage was the largest contributor. Furthermore, the results showed that anode power deposition can be reduced by operating at increased anode pressures, reduced arc currents, and applied magnetic field strengths and with magnetic field lines intercepting the anode.

Soulas, George C.↗
NASA NTRS1976

On the emission mechanism in high current hollow cathode arcs

Large hollow cathodes have been operated in a magnetoplasmadynamic arc over wide ranges of current and mass flow, with orifice current densities and mass fluxes encompassing those encountered in low current steady state hollow cathode arcs. Detailed cathode interior measurements of current and potential distributions show that maximum current penetration into the cathode is about one diameter axially upstream from the tip, with peak inner surface current attachment up to one cathode diameter upstream of the tip. The spontaneous attachment of peak current upstream of the cathode tip is suggested as a criterion for characteristic hollow cathode operation. This empirical criterion was verified by experiment.

Krishnan, M.↗
NASA NTRS2016

Dynamic Characterization of Galfenol (Fe81.6Ga18.4)

Galfenol has the potential to transform the smart materials industry by allowing for the development of multifunctional, load-bearing devices. One of the primary technical challenges faced by this development is the very limited experimental data on Galfenol's frequency-dependent response to dynamic stress, which is critically important for the design of such devices. This report details a novel and precise characterization of the constitutive behavior of polycrystalline Galfenol (Fe81.6Ga18.4) under quasi-static (1 Hz) and dynamic (4 to 1000 Hz) stress loadings. Mechanical loads are applied using a high-frequency load frame. Quasi-static minor and major hysteresis loop measurements of magnetic flux density and strain are presented for constant electromagnet currents (0 to 1.1 A) and constant magnetic fields 0 to 14 kA/m (0 to 180 Oe). The dynamic stress amplitude for minor and major loops is 2.88 and 31.4 MPa (418 and 4550 psi), respectively. Quasi-static material properties closely match published values for similar Galfenol materials. Quasi-static actuation responses are also measured and compared to quasi-static sensing responses; the high degree of reversibility seen in the comparison is consistent with published measurements and modeling results. Dynamic major and minor loops are measured for dynamic stresses up to 31 MPa (4496 psi) and 1 kHz, and the bias condition resulting in maximum, quasi-static sensitivity. Eddy current effects are quantified by considering solid and laminated Galfenol rods. Three key sources of error in the dynamic measurements are accounted for: (1) electromagnetic noise in strain signals due to Galfenol's magnetic response, (2) error in load signals due to the inertial force of fixturing, and (3) phase misalignment between signals due to conditioning electronics. For dynamic characterization, strain error is kept below 1.2 percent of full scale by wiring two collocated gauges in series (noise cancellation) and through leadwire weaving. Inertial force error is kept below 0.41 percent by measuring the dynamic force in the specimen using a nearly collocated piezoelectric load washer. The phase response of all conditioning electronics is explicitly measured and corrected for. In general, as frequency is increased, the sensing response becomes more linear because of an increase in eddy currents. As frequency increases above approximately 100 Hz, the elbow in the strain-versus-stress response disappears as the active (soft) regime stiffens toward the passive (hard) regime. Under constant-field conditions, the loss factors of the solid rod peak between 200 and 600 Hz, rather than exhibiting a monotonic increase. Compared to the solid rod, the laminated rod exhibits much slower increases in hysteresis with frequency, and its quasi-static behavior extends to higher frequencies. The elastic modulus of the laminated rod decreases between 100 and 300 Hz; this trend is currently unexplained.

Dynamic sensing↗
NASA NTRS1995

InGaAsSb/GaSb thermophotovoltaic cells

AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate. The (direct) bandgap of the In(1 - x)Ga(x)As(1 -y)Sb(y) alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x, y); and is closely lattice-matched to the GaSb substrate The use of the quaternary alloy, as opposed to a ternary alloy - such as, for example, InGaAs/InP - permits low bandgap devices optimized for 1000 to 1500 C thermal sources with, with at the time, near-exact lattice matching to the GaSb substrate. Lattice-matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. For bandgaps of 0.52 eV,Fo internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/sq cm is 0.220 volts and 0.260 V for current densities of 2 A/sq cm. Fill factors of 56% have also been measured. These preliminary results lead to the conclusion that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1000 to 1500 C source temperatures.

Mauk, M. G.↗
NASA NTRSDate not supplied

Molten Salt Electrolytes: Computational Analysis of Transport, Electrochemical Properties and Designing New Mixtures

Electric aircraft propulsion has gained a traction over the last decade due to possible high-energy density electrochemistries with reasonable cycle life and identification of non-flammable chemistries that can guarantee much better safety. Commercial Li-ion batteries cannot reach such high capacities because of weight limitations that arise from the widely used intercalation electrodes. Also, use of organic electrolytes make them highly susceptible to fire on exposure to air and humidity. Currently, use of Lithium metal anode along with conversion electrochemistries such as Li-O2 and Li-S are being pursued to achieve such high energy densities. Safer inorganic solid-state electrolytes, recently discovered Water-in-Salt electrolytes, molten salt electrolytes are some of the alternatives being pursued for a safer/non-flammable battery. Of these safer alternatives, molten-salt electrolytes offer some attractive properties: liquid at operating temperatures resulting in better electrode-wetting, stable interface with Li-metal anodes and good ionic conductivity; their only drawback being high operating temperatures. In this talk, we will discuss some of the computational studies, driven via atomistic simulations, of the properties of molten-salt electrolytes including transport mechanism and interface stability. We will also discuss predicting electrochemical properties of these high-temperature electrolytes. Further, we will discuss a thermodynamic approach to predicting new molten-salt eutectics with lower melting points.

Molten Salt Electrolytes↗
NASA NTRS1994

Three-dimensional magnetic bubble memory system

A compact memory uses magnetic bubble technology for providing data storage. A three-dimensional arrangement, in the form of stacks of magnetic bubble layers, is used to achieve high volumetric storage density. Output tracks are used within each layer to allow data to be accessed uniquely and unambiguously. Storage can be achieved using either current access or field access magnetic bubble technology. Optical sensing via the Faraday effect is used to detect data. Optical sensing facilitates the accessing of data from within the three-dimensional package and lends itself to parallel operation for supporting high data rates and vector and parallel processing.

Stadler, Henry L.↗
NASA NTRS1998

Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (less than 250 V) 4H-SiC p(+)n Junction diodes: DC Properties - Part 1

Given the high density (approx. 10(exp 4)/sq cm) of elementary screw dislocations (Burgers vector = 1c with no hollow core) in commercial SiC wafers and epilayers, all appreciable current (greater than 1 A) SiC power devices will likely contain elementary screw dislocations for the foreseeable future. It is therefore important to ascertain the electrical impact of these defects, particularly in high-field vertical power device topologies where SiC is expected to enable large performance improvements in solid-state high-power systems. This paper compares the DC-measured reverse-breakdown characteristics of low-voltage (less than 250 V) small-area (less than 5 x 10(exp -4)/sq cm) 4H-SiC p(+)n diodes with and without elementary screw dislocations. Compared to screw dislocation-free devices, diodes containing elementary screw dislocations exhibited higher pre-breakdown reverse leakage currents, softer reverse breakdown I-V knees, and highly localized microplasmic breakdown current filaments. The observed localized 4H-SiC breakdown parallels microplasmic breakdowns observed in silicon and other semiconductors, in which space-charge effects limit current conduction through the local microplasma as reverse bias is increased.

Neudeck, Philip G.↗
NASA NTRS1999

Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (<250 V) 4H-SiC p+n Junction Diodes - Part 1: DC Properties

Given the high density (approx. 10(exp 4)/sq cm) of elementary screw dislocations (Burgers vector = lc with no hollow core) in commercial SiC wafers and epilayers, all appreciable current (greater than 1 A) SiC power devices will likely contain elementary screw dislocations for the foreseeable future. It is therefore important to ascertain the electrical impact of these defects, particularly in high-field vertical power device topologies where SiC is expected to enable large performance improvements in solid-state high-power systems. This paper compares the DC-measured reverse-breakdown characteristics of low-voltage (less than 250 V) small-area (less than 5 x 10(exp -4) sq cm) 4H-SiC p(+)n diodes with and without elementary screw dislocations. Compared to screw dislocation-free devices, diodes containing elementary screw dislocations exhibited higher pre-breakdown reverse leakage currents, softer reverse breakdown I-V knees, and highly localized microplasmic breakdown current filaments. The observed localized 4H-SiC breakdown parallels microplasmic breakdowns observed in silicon and other semiconductors, in which space-charge effects limit current conduction through the local microplasma as reverse bias is increased.

Neudeck, Philip G.↗
NASA NTRS1976

Cusped magnetic field mercury ion thruster

A residence time approach is used to explain the nonuniform beam current density profile of the SERT II thruster and to propose a magnetic field modification which should produce a highly uniform beam profile. Expressions are derived which relate the thruster performance parameters to the geometry and plasma properties of the discharge chamber. These relationships are applied to a cylindrical discharge chamber model of the SERT II thruster and suggest that, in addition to the magnetic field modification, the discharge chamber length of this thruster should be reduced. These modifications should result in a thruster which has a highly uniform beam profile, good performance, and a low double ion population. Experimental results indicate that at about the same thrust and performance levels the beam flatness parameter of the modified thruster is 40% higher than the SERT II thruster value.

Beattie, J. R.↗