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At least 415 records · Page 23
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Nanoscale Decoupling of Carrier-Phonon Transport in Carbon Nanotube-Halide Perovskite Heterostructures

In conventional semiconductors, electrical and thermal conductivity are typically coupled, posing a challenge in optimizing both simultaneously. Overcoming this inherent trade-off enables strategies for advancing electronic applications. Herein, a strategy is demonstrated to decouple electrical and thermal conductivity trade-off by creating heterostructures of highly conductive single-walled carbon nanotubes (SWCNTs) coated with low conductivity hybrid perovskites. Coating SWCNTs with methylammonium lead iodide perovskite results in an enhancement in electrical conductivity (408-1266 S cm-1) due to p-type doping followed by a threefold decrease of the in-plane thermal conductivity (3.3-1 W m-1 K-1), compared to pristine SWCNTs. Molecular dynamics simulations uncover phonon boundary scattering at the SWCNT/perovskite interface as well as localization of methylammonium-related and softening of the Pb-I-related phonon modes in methylammonium lead iodide perovskite decreasing the thermal conductivity.

14 SOLAR ENERGY↗
DOE OSTI2023

Long carrier diffusion length in two-dimensional lead halide perovskite single crystals

Ruddlesden-Popper (RP) perovskites are two-dimensional semiconductors for high-performance optoelectronic devices. In this work, we report a long in-plane carrier diffusion length in 2D RP perovskite single crystals probed by scanning photocurrent microscopy. Carrier diffusion lengths of 7–14μm are observed when the number of PbI 6 –2 octahedra between organic spacers increases from 1 to 3. Using detailed light intensity and electric-field-dependent photocurrent measurements, we attribute the observed long diffusion length to the dominating dissociated free carrier transport. This is further validated by time-resolved photoluminescence measurements, where the decay lifetime increases in the presence of an electric field. From our experiments, we conclude that the in-plane transport in RP perovskites is efficient because of the partial free carrier generation, which overcomes strong excitonic effects. In conclusion, our results suggest that semiconducting devices fabricated from RP perovskite single crystals can be as efficient as their 3D counterparts.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Overcoming Shockley-Queisser limit using halide perovskite platform?

The Intergovernmental Panel on Climate Change (IPCC) reveals that the global temperature has reached its highest level in the last 2,000 years. Development of emissions-free electrification technologies such as photovoltaics (PV) can be a great paramountcy to balance the climate pressure and the growing demand on energy. Although many PV technologies have been demonstrated so far, all the single-junction PVs are still subjected to the well-known efficiency cap of the Shockley-Queisser limit (33.7%), with most of the absorbed solar energy lost into heat. In parallel to delicate system-level designs, such as tandem, multi-junction, photothermal, or up-/down-conversion, we ask the question about the feasibility of overcoming the SQ limit at material level. In this study, we first dissect the origin of the limit, and then, by using the emerging perovskite as the platform, we list several potential pathways (i.e., hot carrier, multi-exciton generation, intermediate band gap, and ferroelectricity that have been newly discovered or can be introduced in the perovskite) to the roadmap of exceeding the SQ limit.

14 SOLAR ENERGY↗
DOE OSTI2025

Crystal growth, scintillation properties & fast neutron-gamma discrimination of cubic halide perovskite CsCaCl 3 :(Eu 2+ , Tl + )

The vast variety of nuclear security applications require radiation detection materials tailored to their operational needs. A scintillator’s properties are strongly influenced by the choice of luminescent dopant, which facilitates customization to different applications. In this work, transparent Ø12 mm single crystals of undoped CsCaCl 3 , CsCaCl 3 :1% Eu, CsCaCl 3 :1% Tl, and CsCaCl 3 :1% Eu, 1% Tl were grown via the Vertical Bridgman method. Their scintillation properties and fast neutron-gamma discrimination capabilities were investigated. Undoped CsCaCl 3 had a light yield of 2,500 ph/MeV, which is the highest reported to date for this CVL material. The incorporation of Eu 2+ or Tl + into CsCaCl 3 as luminescence centers resulted in significantly higher light yields of ∼16,000 ph/MeV and energy resolutions of ∼8% at 662 keV. Compared to the single dopant counterparts, CsCaCl 3 :Eu, Tl had significantly suppressed afterglow; however, this came at the cost of reduced light yield. Among the materials tested, only CsCaCl 3 :Tl showed effective fast neutron and gamma discrimination capabilities, achieving a Figure of Merit of 3.2 between gamma-rays and fast neutron captures that produce protons and 1.6 between gamma-rays and fast neutron captures that produce alpha particles.

crystal growth↗