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At least 415 records · Page 23

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NASA NTRS2001

Low Power Silicon Germanium Electronics for Microwave Radiometers

Space-based radiometric observations of key hydrological parameters (e.g., soil moisture) at the spatial and temporal scales required in the post-2002 era face significant technological challenges. These measurements are based on relatively low frequency thermal microwave emission (at 1.4 GHz for soil moisture and salinity, 10 GHz and up for precipitation, and 19 and 37 GHz for snow). The long wavelengths at these frequencies coupled with the high spatial and radiometric resolutions required by the various global hydrology communities necessitate the use of very large apertures (e.g., greater than 20 m at 1.4 GHz) and highly integrated stable RF electronics on orbit. Radio-interferometric techniques such as Synthetic Thinned Array Radiometry (STAR), using silicon germanium (SiGe) low power radio frequency integrated circuits (RFIC), is one of the most promising technologies to enable very large non-rotating apertures in space. STAR instruments are composed of arrays of small antenna/receiving elements that are arranged so that the collecting area is smaller than an equivalent real aperture system, allowing very high packing densities for launch. A 20 meter aperture at L-band, for example, will require greater than 1000 of these receiving elements. SiGe RFIC's reduce power consumption enough to make an array like this possible in the power-limited environment of space flight. An overview of the state-of-the-art will be given, and current work in the area of SiGe radiometer development for soil moisture remote sensing will be discussed.

Doiron, Terence A.↗

NASA NTRS1991

The Nickel(111)/Alkaline Electrolyte Interface

The electrochemical properties of Ni (111) prepared and characterized in ultra high vacuum, UHV, by surface analytical techniques have been examined in alkaline media by cyclic voltammetry using an UHV-electrochemical cell transfer system designed and built in this laboratory. Prior to the transfer, the Ni(111) surfaces were exposed to saturation coverages of CO in UHV in an attempt to protect the surface from possible contamination with other gases during the transfer. Temperature Programmed Desorption, TPD, of CO-dosed Ni (111) surfaces displaying sharp c(4x2), LEED patterns, subsequently exposed to water-saturated Ar at atmospheric pressure in an auxiliary UHV compatible chamber and finally transferred back to the main UHV chamber, yielded CO2 and water as the only detectable products. This indicates that the CO-dosed surfaces react with water and/or bicarbonate and hydroxide as the most likely products. Based on the integration of the TPD peaks, the combined amounts of H2O and CO2 were found to be on the order of a single monolayer. The reacted c(4x2)CO/Ni(111) layer seems to protect the surface from undergoing spontaneous oxidation in strongly alkaline solutions. This was evidenced by the fact that the open circuit potential observed immediately after contact with deaerated 0.1 M KOH was about 0.38 V vs. DHE, drifting slightly towards more negative values prior to initiating the voltametric scans. The average ratio of the integrated charge obtained in the first positive linear scan in the range of 0.35 to 1.5 V vs. DHE (initiated at the open circuit potential) and the first (and subsequent) linear negative scans in the same solution yielded for various independent runs a value of 3.5 +/- 0.3. Coulometric analysis of the cyclic voltammetry curves indicate that the electrochemically formed oxyhydroxide layer involves a charge equivalent to 3.2 +/- 0.4 layers of Ni metal.

Wang, Kuilong↗

NASA NTRS2016

A Discrete Component Low-Noise Preamplifier Readout for a Linear (1x16) SiC Photodiode Array

A compact, low-noise and inexpensive preamplifier circuit has been designed and fabricated to optimally readout a common cathode (1x16) channel 4H-SiC Schottky photodiode array for use in ultraviolet experiments. The readout uses an operational amplifier with 10 pF capacitor in the feedback loop in parallel with a low leakage switch for each of the channels. This circuit configuration allows for reiterative sample, integrate and reset. A sampling technique is given to remove Johnson noise, enabling a femtoampere level readout noise performance. Commercial-off-the-shelf acquisition electronics are used to digitize the preamplifier analogue signals. The data logging acquisition electronics has a different integration circuit, which allows the bandwidth and gain to be independently adjusted. Using this readout, photoresponse measurements across the array between spectral wavelengths 200 nm and 370 nm are made to establish the array pixels external quantum efficiency, current responsivity and noise equivalent power.

low-noise preamplifier↗

DOE OSTI2026

Versatile High-Gain Low-Noise Readout ASIC for Silicon Microstrip Tracking Detectors

This work presents Turpial, a custom-designed low- power front-end readout ASIC for microstrip silicon sensors. Implemented in 130 nm CMOS technology, the chip integrates 64 identical readout channels, each including a configurable charge-sensitive amplifier, a bipolar pulse shaper, a 32-sample 50 Msps analog memory, and a 12-bit RC-hybrid SAR ADC operating at 1 Msps. To satisfy the target power budget of 5 mW per channel, the architecture employs a time-decoupled readout scheme in which fast transient signals are first captured in the analog memory and subsequently digitized at a lower rate. Turpial supports a wide dynamic range from 1 kℎ+ to 1 Mℎ+ while maintaining low noise performance, targeting an equivalent noise charge (ENC) below 200 𝑒−including the sensor, and providing a maximum gain of 1500 mV/fC. A digital block manages slow control, data acquisition, and data serialization through dual CML 300 Mb/s serializers. In addition, an on-chip reference circuit, based on a sub-1 V bandgap reference and an integrated LDO regulator, eliminates the need for external reference circuitry. Experimental results demonstrate that both the individual building blocks and the fully integrated ASIC meet the design specifications.

Hernandez, Hugo [Stanford University] (ORCID:00000↗

NASA NTRS1993

Test pattern generation for ILA sequential circuits

An efficient method of generating test patterns for sequential machines implemented using one-dimensional, unilateral, iterative logic arrays (ILA's) of BTS pass transistor networks is presented. Based on a transistor level fault model, the method affords a unique opportunity for real-time fault detection with improved fault coverage. The resulting test sets are shown to be equivalent to those obtained using conventional gate level models, thus eliminating the need for additional test patterns. The proposed method advances the simplicity and ease of the test pattern generation for a special class of sequential circuitry.

Feng, YU↗

DOE OSTI2025

UV + Damp Heat Induced Power Losses in Fielded Utility N-Type Si PV Modules

A recent trend in commercial PV modules is a transition to n-type silicon cells, including passivated emitter rear totally diffused (n-PERT), tunnel oxide passivated contact (TOPCon), and silicon heterojunction (SHJ). There is evidence via lab studies that some of these cells are more susceptible to UV induced degradation (UVID), yet there is a lack of confirmation that such degradation occurs in the field. Current IEC standards designed to screen for early module failures require only minimal UV exposure (15 kWh/m2 280-400 nm, ~2-3 months equivalent outdoor exposure). Here, we investigate fielded n-PERT silicon (Si) modules from a commercial utility that show power losses of ~2%/year. We present a comprehensive picture of the physics and chemistry of degradation supported by both module and cell electronic characterization (EL, PL, IV, EQE, and DLIT) and materials-level morphological and chemical analysis (SEM, EDS, XPS, FTIR, and HPLC). All sampled site modules show short circuit current (Isc) and open circuit voltage (Voc) losses when compared to unfielded spares, with the most severely degraded also having losses in fill factor (FF). We identify two different degradation modes contributing to overall power loss: (1) external quantum efficiency (EQE) measurements show losses in the blue range of the spectra, indicative of cell surface recombination losses, and (2) variations in high series resistance (Rs) at the cell level that are correlated with compositional differences in cell metallization. Using unfielded spares, we were able to reproduce Voc, Isc, and EQE losses via a minimum UV stress of 67.5 kWh/m2 (280-400 nm), 4.5x the exposure currently required in IEC 61215-2 (MQT 10). Degradation continued with additional UV dosage equivalent to the fielded modules (405 kWh/m2 total), with power loss leveling out at an average of 6.1%. Subsequent 1000 h of 85% RH/85degrees C damp heat testing showed that cells exposed to UV underwent additional severe series resistance degradation, even those without the susceptible paste composition seen in the field, whereas non-UV exposed cells saw little change. We attribute this to higher concentrations of acetic acid generated on the UV exposed area of the module, leading to degradation of the gridline/cell interface and high Rs. This study is unique in that it reproduces field observed utility scale UVID with an accelerated test and supports the need for standards development for longer UV exposure combined with other stress factors to catch materials interplay within a module package.

14 SOLAR ENERGY↗

NASA NTRS1991

Pi/4-QPSK modems for satellite sound/data broadcast systems

The use of pi/4-quadrature phase-shift keying (QPSK) modems for satellite sound broadcast systems (SSBS) broadcasting to mobile or portable receivers is proposed. Three different differential detectors (including the FM-discriminator followed by integrate-sample-and-dump filter) and a novel coherent detector are discussed. The degradation caused by the frequency offset between the local oscillator (LO) and the unmodulated carrier (CR) in the baseband differential detector is studied. The performance of both coherently and differentially detected pi/4-QPSK in a Gaussian channel is also studied. It is shown that with a frequency offset of more than 3 percent of the symbol rate, the performance degradation is more than 1 dB at 0.0001. The out-of-band power of the nonlinearly amplified bandlimited pi/4-QPSK signals is reduced from -13 dB to -37 dB if a 2-dB output back-off amplifier is used instead of a hardlimiter. The performance of the pi/4-QPSK is equivalent to that of QPSK, although the pi/4-QPSK has the advantage of less spectrum restoration after nonlinear amplification. The coherent demodulator and differential decoder avoid the three-level detection and achieve the same bit-error-rate performance as DEQPSK with a simple circuit.

Liu, Chia-Liang↗

NASA NTRS1993

Forback DC-to-DC converter

A pulse-width modulated DC-to-DC power converter including a first inductor, i.e. a transformer or an equivalent fixed inductor equal to the inductance of the secondary winding of the transformer, coupled across a source of DC input voltage via a transistor switch which is rendered alternately conductive (ON) and nonconductive (OFF) in accordance with a signal from a feedback control circuit is described. A first capacitor capacitively couples one side of the first inductor to a second inductor which is connected to a second capacitor which is coupled to the other side of the first inductor. A circuit load shunts the second capacitor. A semiconductor diode is additionally coupled from a common circuit connection between the first capacitor and the second inductor to the other side of the first inductor. A current sense transformer generating a current feedback signal for the switch control circuit is directly coupled in series with the other side of the first inductor so that the first capacitor, the second inductor and the current sense transformer are connected in series through the first inductor. The inductance values of the first and second inductors, moreover, are made identical. Such a converter topology results in a simultaneous voltsecond balance in the first inductance and ampere-second balance in the current sense transformer.

Lukemire, Alan T.↗

NASA NTRS1995

Forback DC-to-DC converter

Lukemire, Alan T.↗

NASA NTRS1978

Preliminary evaluation of Glass Resin materials for solar cell cover use

The glass resins were deposited by several techniques on 200 micron thick cells and on 50 microns thick wafers. The covered cells were exposed to ultraviolet light in vacuum to an intensity of 10 UV energy-equivalent solar constants at air mass zero for 728 hr. The exposure was followed by a single long thermal cycle from ambient temperature to -150 C. Visual inspection of the samples indicated that all samples had darkened to varying degrees. The loss in short-circuit current was found to range from 8 to 24%, depending on the resin formulation. In another test over 40 glass resin-coated silicon wafers withstood 15 thermal cycles from 100 to-196 C in one or more of the thicknesses tested. Several of the resin-coated wafers were tested at 65 C and 90% relative humidity for 170 hr. No change in physical appearance was detected.

Marsik, S. J.↗

NASA NTRS1984

Electrodynamic tethers. I - Power generation in LEO. II - Thrust for propulsion & power storage

The power gain and thrust for plasma engines available by unreeling 10 km of insulated Al wire from a spacecraft are investigated. The wire, unreeling in the vertical, would cut the earth's magnetic field lines, thereby generating 20 kW of power in the wire. A drag loss of 20.4 kJ/sec would reduce the power gain to 18.7 kW, an efficiency of 92 percent. Thicker wires could push the power gain to 1 MW at 95 percent efficiency. Conductive 'balloons' at the ends of the tether would function as ionospheric 'brushes' to complete the circuit. Reversing the IXB force by employing on-board stored power would drive the tether current against the induced voltage, providing a 1 N thrust for 8 kW of energy consumed, which could be supplied by solar panels during the day portion of orbit. The equivalent thrust by conventional stationkeeping means would consume 8000 kg of propellant/yr. Techniques for stabilizing the tether in the presence of variable magnetic fields are discussed.

Mccoy, J. E.↗

NASA NTRS1990

Interferometric Measurement Of Residual Stress

Stress averaged through thickness of plate measured nondestructively. Theory of elasticity combined with laser interferometric technique into technique for measurement of residual stresses in solid objects - usually in thin, nominally-flat plates. Measurements particularly useful in inspection of wafers of single-crystal silicon for making solar cells or integrated circuits, because stresses remaining after crystal-growing process cause buckling or fracture. Used to predict deflections of plates caused by known applied loads under specified boundary condition, or to infer applied loads that cause known deflections. Also used to relate known deflections to residual stresses equivalent to stresses produced by fictitious applied loads.

Danyluk, Steven↗

NASA NTRS1975

A study of short test and charge retention test methods for nickel-cadmium spacecraft cells

Methods for testing nickel-cadmium cells for internal shorts and charge retention were studied. Included were (a) open circuit voltage decay after a brief charge, (b) open circuit voltage recovery after shorting, and (c) open circuit voltage decay and capacity loss after a full charge. The investigation included consideration of the effects of prior history, of conditioning cells prior to testing, and of various test method variables on the results of the tests. Sensitivity of the tests was calibrated in terms of equivalent external resistance. The results were correlated. It was shown that a large number of variables may affect the results of these tests. It is concluded that the voltage decay after a brief charge and the voltage recovery methods are more sensitive than the charged stand method, and can detect an internal short equivalent to a resistance of about (10,000/C)ohms where "C' is the numerical value of the capacity of the cell in ampere hours.

Scott, W. R.↗

NASA NTRS1978

Preliminary evaluation of glass resin materials for solar cell cover use

Silicon solar cells and silicon wafers coated with a heat-curable resin consisting of alternating Si-O atoms were subjected to three tests to evaluate the potential utility of this coating in space environments. These included UV irradiation in vacuum at an intensity of 10 air mass zero UV energy-equivalent solar constants for 728 hours followed by a long thermal cycle; 15 thermal shock cycles between 100 C and minus 196 C; and high temperature and humidity (65 C at 90% relative humidity). The UV tests resulted in a 8 to 24% loss in short-circuit current and darkening of the covers. Modification of the resin to provide a better match between the coefficients of expansion of the resin and silicon improved resistance to thermal shock, but also increased the darkening effect under UV irradiation. Silicon wafers coated with the resin were not adversely affected by the temperature/humidity test.

Marsik, S. J.↗

NASA NTRS1986

Total-dose radiation effects data for semiconductor devices. 1985 Supplement. Volume 2, part B

Steady-state, total-dose radiation test data are provided in graphic format, for use by electronic designers and other personnel using semiconductor devices in a radiation environment. The data were generated by JPL for various NASA space programs. The document is in two volumes: Volume 1 provides data on diodes, bipolar transistors, field effect transistors, and miscellaneous semiconductor types, and Volume 2 (Parts A and B) provides data on integrated circuits. The data are presented in graphic, tabular, and/or narrative format, depending on the complexity of the integrated circuit. Most tests were done steady-state 2.5-MeV electron beam. However, some radiation exposures were made with a Cobalt-60 gamma ray source, the results of which should be regarded as only an approximate measure of the radiation damage that would be incurred by an equivalent electron dose. All data were generated in support of NASA space programs by the JPL Radiation Effects and Testing Group (514).

Martin, K. E.↗

NASA NTRS1988

Formula Gives Better Contact-Resistance Values

Lateral currents in contact strips taken into account. Four-terminal test structures added to intergrated circuits to enable measurement of interfacial resistivities of contacts between thin conducting layers. Thin-film model simplified quasi-two-dimensional potential model that accounts adequately for complicated three-dimensional, nonuniform current densitites. Effects of nonuniformity caused by lateral current flow in strips summarized in equivalent resistance Rs and voltage Vs.

Lieneweg, Udo↗

DOE OSTI2023

Quantum simulation of an exotic quantum critical point in a two-site charge Kondo circuit

Tuning a material to the cusp between two distinct ground states can produce physical properties that are unlike those in either of the neighbouring phases. Advances in the fabrication and control of quantum systems have raised the tantalizing prospect of artificial quantum simulators that can capture such behaviour. A tunable array of coupled qubits should have an appropriately rich phase diagram, but realizing such a system with either tunnel-coupled semiconductor quantum dots or metal nanostructures has proven difficult. The challenge for scaling up to clusters or lattices is to ensure that each element behaves essentially identically and that the coupling between elements is uniform, while also maintaining tunability of the interactions. Here we study a nanoelectronic circuit comprising two coupled hybrid metal–semiconductor islands, combining the strengths of both materials to form a potentially scalable platform. The semiconductor component allows for controllable inter-site couplings at quantum point contacts, while the metal component’s effective continuum of states means that different sites can be made equivalent by tuning local potentials. The couplings afforded by this architecture can realize an unusual quantum critical point resulting from frustrated Kondo interactions. In this study, the observed critical behaviour matches theoretical predictions, verifying the success of our experimental quantum simulation.

36 MATERIALS SCIENCE↗

DOE OSTI2024

The SparkPix-S ASIC for the sparsified readout of 1 MHz frame-rate X-ray cameras at LCLS-II: pixel design and simulation results

Exploiting the “sparse” nature of the information in XPCS (X-ray Photon Correlation Spectroscopy) and XSVS (Speckle Visibility Spectroscopy) experiments, we present the SparkPix-S, a 3-sides buttable Application Specific Integrated Circuit (ASIC) based on a sparsified readout strategy for large-format hybrid detectors. The SparkPix-S architecture, based on the successful ePix family, will be composed as follows: a front-end 2-D matrix of 384×352 square pixels with 50 µm pitch is arranged to match the dimensions of a PIN Si-sensor matrix; charge readout, signal shaping and amplitude discrimination is performed at pixel-level, by means of a low-power (<18 µW) analog processor, which, in case of an event, negotiates access to an analog bus placed every other column; on the chip periphery (balcony), the information on each bus is digitized by an array of successive approximation analog-to-digital converters (SAR-ADCs) running at 10 Msps; on the digital back-end the global logic will generate the output data stream using low-voltage differential signalling (LVDS). A first prototype of the SparkPix-S, with a reduced matrix size of 96×96 pixels, is currently under production on a 130 nm CMOS technology. Simulated performance results show an equivalent noise charge <60 el. r.m.s. at 1 MHz repetition rate, with a maximum input energy of 60 keV and capability to discriminate charge signals with equivalent energy as low as 900 eV.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗