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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 415 records · Page 23
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Advances in 3D transient plasma dynamics and control through MHD and hybrid fluid-kinetic simulations with JOREK

Transient phenomena and their control are of high relevance in magnetic confinement fusion plasmas to guarantee a stable and safe plasma operation. Interpretative simulations can maximize the insights gained from experiments on present machines and predictive simulations can help in the preparation of design, mitigation techniques and operational scenarios for future devices. In this article, we provide an overview of recent advances and novel scientific results obtained with the 3D non-linear hybrid fluid-kinetic code JOREK, covering physics of plasma transients from the core to the scrape-off layer (SOL) both for tokamak and stellarator devices. Substantial progress was made in the physics understanding, model validation with experiments and experiment interpretation, thus, giving confidence for predictions to devices like DTT, ITER and DEMO. The topics addressed comprise a wide range: the edge physics of new operation scenarios and edge localized mode suppression; major disruptions with a focus on runaway electrons and vertical displacement events as well as disruption mitigation by shattered pellet injection; the physics mechanisms and operational limits of the flux pumping regime for sawtooth control; MHD limits of stellarators and work towards incorporating advanced edge/SOL/exhaust dynamics; continuing improvements of the code for more efficient hybrid simulations on conventional and accelerated high performance computing architectures.

disruptions↗
DOE OSTI2025

Gate control of electron correlations towards Mott field effect transistors (MottFET)

The modulation of channel conductance in field-effect transistors (FETs) via metal-insulator-semiconductor structures has revolutionized information processing and storage. However, the limitations of silicon-based FETs in electrical switching have driven the search for new materials capable of overcoming these constraints. Electrostatic gating of competing electronic phases in a Mott material near its metal-to-insulator transition (MIT) offers the prospects of substantial modulation of the conducting electrons and electrical resistivity through small changes in band filling. While electrostatic control of the MIT has been previously reported, the advancement of Mott materials toward novel Mott-based transistors, MottFETs requires the realization of their unique physical properties in a solid-state device. In this study, we present gate control of electron correlation using a solid-state device utilizing the oxide Mott system La 1-x Sr x VO 3 as a correlated FET channel. We report on a gate resistance response that cannot be explained in a purely electrostatic framework. This behavior suggests an enhancement in effective mass and a reduction in effective carrier density as the system approaches its insulating state, consistent with theoretical predictions for Mott systems, suggesting at least 100× charge gain originating from the correlated behavior. These preliminary results pave the way toward the development of highly efficient, low-power electronic devices that could surpass the performance bottlenecks of conventional FETs by leveraging the electronic phase transitions of correlated electron systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Topological quantum devices: a review

The introduction of the concept of topology into condensed matter physics has greatly deepened our fundamental understanding of transport properties of electrons as well as all other forms of quasi particles in solid materials. It has also fostered a paradigm shift from conventional electronic/optoelectronic devices to novel quantum devices based on topology-enabled quantum device functionalities that transfer energy and information with unprecedented precision, robustness, and efficiency. In this article, the recent research progress in topological quantum devices is reviewed. We first outline the topological spintronic devices underlined by the spin-momentum locking property of topology. We then highlight the topological electronic devices based on quantized electron and dissipationless spin conductivity protected by topology. Finally, we discuss quantum optoelectronic devices with topology-redefined photoexcitation and emission. The field of topological quantum devices is only in its infancy, we envision many significant advances in the near future.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Potential Skyrmion Host Fe(IO3)3: Connecting Stereoactive Lone-Pair Electron Effects to the Dzyaloshinskii-Moriya Interaction

Magnetic skyrmions, which are topologically distinct magnetic spin textures, are gaining increased attention for their unique physical properties and potential applications in spintronic devices. Here we present a design strategy for skyrmion host candidates based on combinations of magnetic spin, asymmetric building units having stereoactive lone-pair electrons, and polar lattice symmetry. To demonstrate the viability of the proposed rational design principles, we successfully synthesized a Fe(IO 3 ) 3 polycrystalline sample and single crystals by using a new simplified low-temperature pathway, which is experimentally feasible for extending materials growth of transition metal iodates. Single crystal X-ray and powder synchrotron X-ray diffraction measurements demonstrated that Fe(IO 3 ) 3 crystallizes in the polar chiral hexagonal lattice with space group P63. The combined structural features of the macroscopic electric polarization along the c-axis stemming from the coalignment of the stereoactive lone-pairs of the IO 3 – trigonal pyramid and the magnetic Fe 3+ cation residing on the 3-fold rotation axis were selected to promote asymmetric exchange coupling. We find evidence of a predicted skyrmion phase at 14 K ≤ T ≤ 16 K and 2.5 T ≤ μ 0 H ≤ 3.2 T driven by a Dzyaloshinskii–Moriya (DM) interaction, a conclusion supported by the appreciable DM exchange and the zero-field spiral antiferromagnetic ground state of Fe(IO 3 ) 3 deduced from neutron diffraction experiments. The associated magnetic modulation wavelength of the putative skyrmions is expected to be short ~18 nm, comparable to the period of the DM-driven incommensurate order. This work links stereoactive lone-pair electron effects to enhanced DM interaction, demonstrating a new approach for chemical guidelines in the search for skyrmionic states of matter.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Inverse Design of Plasma Metamaterial Devices for Optical Computing

We apply inverse-design methods to produce two-dimensional plasma metamaterial (PMM) devices. Backpropagated finite-difference frequency-domain (FDFD) simulations are used to design waveguides and demultiplexers operating under both TE and TM modes. Demultiplexing and waveguiding are demonstrated for devices composed of plasma elements with reasonable plasma densities of approximately 7 GHz, allowing for future in situ training and experimental realization of these designs. We also explore the possible applicability of PMMs to nonlinear boolean operations for use in optical computing. Functionally complete logical connectives (or and and) are achieved in the TM mode.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2026

Tailorable multiferroic tunnel junctions from all-van der Waals multilayer stacking

Multiferroic tunnel junctions (MFTJs) represent a class of multistate, non-volatile spintronic devices, in which electron tunnelling can be manipulated by switching long-range lattice and spin orders. In contrast to conventional oxide-based MFTJs, MFTJs constructed from two-dimensional van der Waals (vdW) crystals promise minimal defect concentration in the constituents and at interfaces, which may allow for probing intrinsic tunnelling physics and the development of high-performance devices. Here, in this study, we construct Fe 3 GeTe 2 /CuInP 2 S 6 /Fe 3 GeTe 2 all-vdW MFTJs by assembling multilayer flakes of ferromagnetic Fe 3 GeTe 2 electrodes and a ferroelectric CuInP 2 S 6 spacer. These MFTJs exhibit four non-volatile resistance states featuring sizable tunnelling magnetoresistance of ∼10 2 % and tunnelling electroresistance of ∼10 4 %. To tune the properties of the vdW MFTJ, we make use of the flexibility in material choice offered by vdW heterostructure devices; we use Fe 3 GeTe 2 /Fe 5 GeTe 2 asymmetric electrodes to boost the tunnelling electroresistance by 10 3 %, we integrate In 2 Se 3 as a ferroelectric with a smaller bandgap to enhance the ON-state current density by 10 4 % to 10 4 A cm −2 and we use Fe 3 GaTe 2 electrodes to demonstrate room temperature operation. Furthermore, when we combine the asymmetric ferromagnetic electrodes with the small-bandgap ferroelectric spacer to construct Fe 3 GeTe 2 /In 2 Se 3 /Fe 5 GeTe 2 MFTJs, we simultaneously realized tunnelling electroresistance of 10 6 % and an ON-state current density of 10 4 A cm −2 , both two orders of magnitude higher than the highest values achieved with conventional oxide-based MFTJs. In the future, our all-vdW MFTJs with the tailorability of all functional layers may make it possible to investigate fundamental aspects of interlayer tunnelling and enable the design of functional magnetoelectric nanodevices.

Xie, Ti [University of Maryland, College Park, MD ↗
DOE OSTI2023

Direct Observation of Magnetic Bubble Lattices and Magnetoelastic Effects in van der Waals Cr 2 Ge 2 Te 6

Abstract Ferromagnetic van der Waals (vdW) materials are of large current interest for the fundamental study of low‐dimensional magnetism and for potential applications in multilayer heterostructures. Cr 2 Ge 2 Te 6 (CGT) is particularly exciting because it is a ferromagnetic semiconductor with tunable electronic and magnetic properties. Controlling the magnetic domain structure of CGT is a requirement for understanding its novel interface physics and for tuning behavior for potential devices. Herein, cryo‐Lorentz transmission electron microscopy is performed in the temperature range of 12–50K to directly image the magnetic domain structures in CGT. A rich phase diagram of domain structures including stripe domains, magnetic bubble lattices of mixed‐chirality, and topologically‐protected lattices of homochiral magnetic bubbles is observed. The types and chiralities of the bubbles can be controlled by topographical changes in the CGT flakes. Additionally, it is observed that in‐plane strain and magnetoelastic coupling can align and organize both bubble lattices and stripe domains. This study provides insights into creating and controlling complex magnetic domain structures for integration into multilayer heterostructures and for future studies of 2D magnetism.

36 MATERIALS SCIENCE↗
DOE OSTI2023

ALEGRA: Finite element modeling for shock hydrodynamics and multiphysics

ALEGRA is a multiphysics finite-element shock hydrodynamics code, under development at Sandia National Laboratories since 1990. Fully coupled multiphysics capabilities include transient magnetics, magnetohydrodynamics, electromechanics, and radiation transport. Importantly, ALEGRA is used to study hypervelocity impact, pulsed power devices, and radiation effects. The breadth of physics represented in ALEGRA is outlined here, along with simulated results for a selected hypervelocity impact experiment.

42 ENGINEERING↗
DOE OSTI2024

Human electromagnetic field exposure in wearable communications systems: A review

While wearable technologies have taken essential parts of our daily lives, concerns on human health are often overseen. Mainly due to extreme proximity or direct physical contact to human skin, wearable communications devices are prone to cause higher levels of electromagnetic field (EMF) exposure at human skin surface than any other type of wireless technologies. Nevertheless, while focusing on theoretical aspects of human EMF exposure in wearable communications, prior work paid little to no attention on exact exposure levels generated by commercial wearable devices that are already widely used by public consumers. In this context, this paper provides an extensive review of SAR from various commercial wearable devices that are currently sold in the market, as well as the analytical framework and the current measurement methodologies for standard compliance tests. To extend the discussion to general wearable communications, this paper presents simulation results adopting representative antenna patterns, which leads to suggestion of separation distances to keep the current safety guidelines. In particular, considering the increasing interest in millimeter wave (mmW), this paper sheds light on EMF exposure evaluated at 60 GHz and compares to results from 2.4 GHz.

42 ENGINEERING↗
DOE OSTI2021

Sulfurized Polyacrylonitrile (SPAN): Changes in Mechanical Properties during Electrochemical Lithiation

Sulfurized polyacrylonitrile (SPAN) is a promising material for stable lithium-sulfur (Li-S) batteries that can potentially satisfy the demand for high-density energy storage devices for electric vehicles (EVs). However, important physical and chemical properties of the SPAN cathode material are not yet well understood. For example, the SPAN mechanical behavior that depends on the structure and chemistry of the material generated during synthesis, and the mechanical response evolution during battery discharge have been scarcely investigated. This work addresses the effects of electrochemical lithiation on the SPAN mechanical integrity via uniaxial tensile loading tests using molecular dynamics with the ReaxFF potential. Here, we evaluate the volume expansion, Young’s modulus, yield strength, and ultimate tensile strength with increasing lithium contents. Our results show how the degree of graphitization of the carbonized skeleton impacts the SPAN ability to withstand the volume expansion-induced structural stresses upon lithiation. We describe the fracture mechanisms and find out a ductility loss with increasing lithium contents

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Domain-Dependent Electronic Properties of 2D Copper Boride Synthesized from Reversible Subsurface Diffusion on Cu(111)

Emerging boron-based 2D materials hold properties with potential applications ranging from electronic devices to catalysis and energy storage. Using physical vapor deposition, 2D copper borides are formed on Cu(111) at elevated temperatures. However, the as-prepared surfaces often contain boron clusters that compromise structural homogeneity, and the dynamics of their formation is not yet fully understood. Through in situ low-energy electron microscopy (LEEM), Auger electron spectroscopy (AES), and scanning tunneling microscopy/spectroscopy (STM/STS), we show that cluster-free 2D CuB x is synthesized via reversible subsurface diffusion of boron atoms. The resolved regular atomic structure aligns with the previously calculated Cu 8 B 14 model. In a rare case, possibly due to surface strain and a change of orientation, a second domain of CuB x was observed with a pronounced change in electronic properties, yet electronic states remain delocalized in both domains. In conclusion, these findings demonstrate the sensitivity of electronic properties to domain structure and highlight a potential opportunity to tune 2D CuB x for diverse applications.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2021

Detecting ionizing radiation using halide perovskite semiconductors processed through solution and alternative methods

We report the direct detection of high-energy radiation such as X-rays and.-rays by semiconductors at room temperature is a challenging proposition that requires remarkably pure and nearly perfect crystals. The emergence of metal halide perovskites, defect-tolerant semiconductors, is reviving hope for new materials in this field after an almost 20 year hiatus. Metal halide perovskites, which combine exceptional optoelectronic properties, versatile chemistry and simple synthesis, are challenging traditional approaches for the development of novel semiconductors for detecting hard radiation. We discuss the relevant physical properties, promising materials, fabrication techniques and device architectures for high-performance, low-cost detectors by targeting next-generation semiconductors for radiation detection. We also present a perspective on the impact of such advances in future medical imaging applications.

36 MATERIALS SCIENCE↗
DOE OSTI2022

VAC: A Software Approach to Resilient SCADA Automation

To better secure critical infrastructure, especially power systems, this paper introduces a virtual SCADA automation controller. The automation controller is a gateway into a power subsystem, making it a valuable target for cyber-attacks that could cut it off from the control center and cause a loss of view and control. To prevent this, the Virtual Automation Controller (VAC) is a backup device that mirrors the capabilities of the physical controller. It can communicate via Modbus and DNP3 and is containerized so it can be deployed on a variety of platforms. Furthermore, it utilizes software-defined networking to quickly disconnect a failed automation controller and preserve its state for forensics. The VAC gives system operators time to replace the failed controller and prevents dangerous and costly damage to power systems. The VAC is compared against the SEL 3505-3 RTAC and shown to have the necessary features to act as a failover controller.

Johnson, Jordan↗
DOE OSTI2022

Optical systems fabricated by printing-based assembly

Provided are optical devices and systems fabricated, at least in part, via printing-based assembly and integration of device components. In specific embodiments the present invention provides light emitting systems, light collecting systems, light sensing systems and photovoltaic systems comprising printable semiconductor elements, including large area, high performance macroelectronic devices. Optical systems of the present invention comprise semiconductor elements assembled, organized and/or integrated with other device components via printing techniques that exhibit performance characteristics and functionality comparable to single crystalline semiconductor based devices fabricated using conventional high temperature processing methods. Optical systems of the present invention have device geometries and configurations, such as form factors, component densities, and component positions, accessed by printing that provide a range of useful device functionalities. Optical systems of the present invention include devices and device arrays exhibiting a range of useful physical and mechanical properties including flexibility, shapeability, conformability and stretchablity.

Rogers, John↗
DOE OSTI2023

Addressing Consequence within Operational Risk: An Approach for Understanding an Organization’s Unique Infrastructure Environment

The endeavor of tackling operational risk focused on consequences is challenging even for the most resourced entity but can be advanced though a simplified approach: identifying, binning, and prioritizing the infrastructure environment. While no two entities within a single element of the 16 critical infrastructure sectors are exactly alike when it comes to risk, there is a basic process to move toward a greater understanding of operational risk through becoming more informed about the infrastructure landscape in which the entity exists. The process starts with bringing internal and external stakeholders and subject matter experts together to analyze key areas such as Information Technology (IT) and Operational Technology (OT) components and points of convergence, analyzing internal and external cyber and physical dependencies, accounting for explosive growth in devices and wireless technology, and leveraging the contributions of people inside and outside the operational environment. Attaining a common understanding of the infrastructure landscape as part of addressing consequences within operational risk is not easy to do or resource light, but the process outlined provides the framework to further any entity’s efforts in this space.

99 GENERAL AND MISCELLANEOUS↗
DOE OSTI2024

Advanced Power Electronics and Electric Machines

The advanced power electronics and electric machines (APEEM) research group at the National Renewable Energy Laboratory (NREL) has developed world-class experimental and modeling capabilities for designing and evaluating efficient and reliable power electronics and electric machines thermal management systems. They also design, fabricate and characterize advanced power electronics packaging, and are developing state-of-health monitoring techniques. These researchers deliver safe, reliable, high performing, power-dense components that allow seamless integration between renewable energy sources, electric transportation, and the grid, helping to make widespread electric vehicle (EV) adoption and greenhouse gas emissions reduction more feasible. This document outlines the group's major capabilities in the areas of power electronics; module development and characterization; thermal modeling and management; thermomechanical reliability analysis of devices, modules, inverters/converters, and electric machines; physics-of-failure-based reliability analysis; and microelectronics. It also overviews the group's state-of-the-art equipment for fluid-based thermal management; thermal measurement & characterization; thermomechanical reliability analysis; micro- and power electronics measurement & characterization; and prototype fabrication, as well as the group's world-class modeling and simulation capabilities.

advanced gate drivers↗
DOE OSTI2024

Addressing Consequence within Operational Risk (O.T. Gagnon III) 9-18-2024

Addressing Consequence within Operational Risk: Why threats and security are just not that important! When dealing with cyber or physical risk within any critical infrastructure (CI) environment, don’t concern yourself with vulnerabilities and threats, at least not at first! Also, don’t be overly fixated on “securing the systems” within the organization. The endeavor of tackling operational risk focused on consequences in any critical infrastructure environment to include the complex Aviation ecosystem is challenging even for the most resourced entity but can be advanced though a simplified approach: identifying, binning, and prioritizing the infrastructure environment. While no two entities within a single element of the 16 critical infrastructure sectors are exactly alike when it comes to risk, there is a basic process to move toward a greater understanding of operational risk through becoming more informed about the infrastructure environment in which the entity exists. The process starts with bringing internal and external stakeholders and subject matter experts together to analyze key areas such as Information Technology (IT) and Operational Technology (OT) components and points of convergence, analyzing internal and external cyber and physical dependencies, accounting for explosive growth in devices and wireless technology, and leveraging the contributions of people inside and outside the operational environment. Attaining a common understanding of the infrastructure environment as part of addressing consequences within operational risk is not easy to do or resource light, but the process outlined provides the framework to further any entity’s efforts in this space. When it comes to cyber risks, before an organization can consider vulnerabilities within and threats to its operations, it must first have a solid understanding of the consequences existing inside its infrastructure environment. Idaho National Lab’s Consequence-Driven, Cyber-Informed Engineering is offered as an example of this approach to effective and efficient cyber risk mitigation.

99 GENERAL AND MISCELLANEOUS↗
DOE OSTI2023

Incremental Threshold Scheme Enabled IoT Group Key Management

Cyber landscape evolves rapidly. Internet of Things (IoT) and Edge Computing (EC) have rapidly become an integral part of the modern computing infrastructure. It is expected that there will be more than 50 billion active and connected IoT devices by 2025 [1]. Pervasive IoT/EC creates unprecedented opportunities bridging the gap between previously segregated cyber and physical spaces. However, this progress also brings along new security challenges. IoT devices typically have limited computation, communication, and storage resources. This leads to security architecture designs such as using symmetric keys for group communication. While secure and efficient in stable network settings, symmetric key solutions are ill-adapted for IoT's highly dynamic device mobility behavior and frequent group membership turnover. Whenever IoT members leave a group, the known symmetric keys cannot be made forgotten, posing a serious vulnerability. This leads to frequent re-groupings that require expensive re-authentication, key regeneration, and key redistribution in order to maintain IoT/EC security. We present a novel symmetric key management framework that integrate an Incremental Threshold Scheme (ITS) cryptographical function into communication protocol's key rotation mechanism to allow for secure and efficient symmetric key communication group member node revocation. This ITS-enabled key management framework alleviates the need of frequent and expensive re-grouping and re-keying needed by today's large and dynamic IoT/EC operations. We further applied this ITS-enabled key management framework to a distributed IoT/EC-integrated publish and subscribe framework for applicability validation.

Li, Mingyan↗