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At least 415 records · Page 23

FY25 Theory and Simulation Performance Target: Development of an integrated modeling framework for fusion reactor design and assessment (Final Report)

This report documents the FY25 Theory and Simulation Performance Target (TSPT) of developing an integrated modeling framework for fusion reactor design and assessment (FREDA). Over Q1-Q4, new capabilities were developed across both plasma and engineering domains and demonstrated on an example representation of a Compact Advanced Tokamak with a Dual Cooled Lead Lithium blanket. This represents a first-of-a-kind demonstration of coupled core-to-wall-to-engineering for a reactor. Self-consistent CESOL workflows were applied to provide core, pedestal, and SOL prediction; new modules were developed for energetic particle stability (FAR3D) and transport (TGLF-EP) analysis; and boundary plasma modeling (SOLPS-ITER, BOUT++/Hermes-3) was expanded to evaluate wall and divertor heat fluxes and interface with engineering thermal analysis. A parameterized CAD tool, TRACER, was expanded to generate medium-fidelity divertor, blanket, and coil geometries; OpenFOAM and Diablo workflows were applied for first-wall and divertor thermal analyses with helium cooling; and reduced-order models were created for high-mass-flux divertor cooling. Magnet multiphysics capabilities were verified between Elmer, Diablo, and a new MFEM-based solver, and workflows enable stress, thermal, and neutron-fluence analysis of TF coils with neutronics-driven heating. Nuclear and blanket analysis workflows were demonstrated, including tritium breeding, transport, and CFD-informed thermo-mechanical assessment. Preliminary multi-fidelity uncertainty quantification workflows were applied to boundary modeling codes and shown to achieve variance reductions with fewer high-fidelity boundary simulations. Key findings highlight the challenges of resolving the ITEP gap to find suitable balance between wall and divertor loads, neutron heating, and practical limits of PFC cooling. Next step priorities are to develop automated workflows to check boundary code convergence and detachment, implement tighter physics-engineering CAD provenance tracking, and inclusion of plasma-material interface models for SLAG and tungsten cracking behavior. Collectively, these developments establish sophisticated capabilities for predictive, multi-fidelity, whole-device modeling that integrates plasma physics, materials, magnets, and nuclear engineering to guide pathways to viable Fusion Pilot Plant design points.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Cryogenic User Facilities for R&D on Noble Liquid Detectors and Low Temperature Devices

Cryogenic test facilities are critical infrastructure for physics experiments in a variety of fields, perhaps most notably for particle detection with noble liquid detectors, low-temperature device development, and quantum information research. However, considerable investment and technical knowledge are required to construct and operate such facilities. This white paper discusses proposals for user facilities aimed at broadening the availability of testing capabilities for the scientific community.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Quantum sensing using a qubit for the detection of ionizing radiation

Quantum sensing utilizes the inherent sensitivity of a quantum system to external stimuli. Our goal is to leverage this sensitivity to develop a quantum sensor designed for the detection of ionizing radiation. Here we report on the design, fabrication, and measurement of a new quantum device for hard x-ray and gamma-ray detection. Our quantum device is based on a superconducting quantum bit (qubit) with superconducting tunnel junctions as the core device elements. We describe our experimental investigation directed toward the detection metrics of energy resolution, dynamic range, and active area. In contrast to existing superconducting detectors, the active area per qubit may be much larger than the physical area of the tunnel junctions or the physical area of the qubit device, due to the sensitivity of quantum coherence to ionizing radiation deposition within a radius on the millimeter or centimeter scale. Furthermore, our experimental design enables an ionizing radiation source at room temperature to be detected by our quantum sensor at low temperature.

qubit↗

Electrical Switching of Perovskite Thin-Film Resistors

Electronic devices that exploit electrical switching of physical properties of thin films of perovskite materials (especially colossal magnetoresistive materials) have been invented. Unlike some related prior devices, these devices function at room temperature and do not depend on externally applied magnetic fields. Devices of this type can be designed to function as sensors (exhibiting varying electrical resistance in response to varying temperature, magnetic field, electric field, and/or mechanical pressure) and as elements of electronic memories. The underlying principle is that the application of one or more short electrical pulse(s) can induce a reversible, irreversible, or partly reversible change in the electrical, thermal, mechanical, and magnetic properties of a thin perovskite film. The energy in the pulse must be large enough to induce the desired change but not so large as to destroy the film. Depending on the requirements of a specific application, the pulse(s) can have any of a large variety of waveforms (e.g., square, triangular, or sine) and be of positive, negative, or alternating polarity. In some applications, it could be necessary to use multiple pulses to induce successive incremental physical changes. In one class of applications, electrical pulses of suitable shapes, sizes, and polarities are applied to vary the detection sensitivities of sensors. Another class of applications arises in electronic circuits in which certain resistance values are required to be variable: Incorporating the affected resistors into devices of the present type makes it possible to control their resistances electrically over wide ranges, and the lifetimes of electrically variable resistors exceed those of conventional mechanically variable resistors. Another and potentially the most important class of applications is that of resistance-based nonvolatile-memory devices, such as a resistance random access memory (RRAM) described in the immediately following article, Electrically Variable Resistive Memory Devices (MFS-32511-1).

Liu, Shangqing↗

Hiding in plain sight: The prevalence and impact of trions and Fermi polarons in transient absorption spectroscopy experiments of 2D semiconductors

Transient absorption (TA) spectroscopy is one of the most popular experimental methods to measure the excited state lifetimes and charge carrier recombination mechanisms in two dimensional (2D) semiconductors. This fundamental information is essential for designing and optimizing the next generation of ultrathin and lightweight 2D semiconductor-based optoelectronic devices. However, the interpretation of TA spectroscopy data varies across the community. The community lacks a unifying physical explanation for how and why experimental variables such as incident light intensity, sample-substrate interactions, and/or applied bias affect TA spectral data. This Perspective (1) compares the physical chemistry TA literature to nanomaterial physics literature from a historical perspective, (2) reviews multiple physical explanations that the TA community developed to explain spectral features and experimental trends, (3) provides a unifying explanation for how and why trions—and, more generally, Fermi polarons—contribute to TA spectra, and (4) quantifies the extent to which various physical interpretations and data analysis procedures yield different timescales and mechanisms for the same set of experimental results. We highlight the importance of considering trions/Fermi polarons in TA measurements and their implications for advancing our understanding of 2D material properties.

2D materials↗

Overview of physics results from MAST upgrade towards core-pedestal-exhaust integration

Recent results from MAST Upgrade are presented, emphasising understanding the capabilities of this new device and deepening understanding of key physics issues for the operation of ITER and the design of future fusion power plants. The impact of MHD instabilities on fast ion confinement have been studied, including the first observation of fast ion losses correlated with Compressional and Global Alfvén Eigenmodes. High-performance plasma scenarios have been developed by tailoring the early plasma current ramp phase to avoid internal reconnection events, resulting in a more monotonic q profile with low central shear. The impact of m/n = 3/2, 2/1 and 1/1 modes on thermal plasma confinement and rotation profiles has been quantified, and scenarios optimised to avoid them have transiently reached values of normalised beta approaching 4.2. In pedestal and ELM physics, a maximum pedestal top temperature of ~350 eV has been achieved, exceeding the value achieved on MAST at similar heating power. Mitigation of type-I ELMs with n = 1 RMPs has been observed. Studies of plasma exhaust have concentrated on comparing conventional and Super-X divertor configurations, while X-point target, X-divertor and snowflake configurations have been developed and studied in parallel. In L-mode discharges, the separatrix density required to detach the outer divertors is approximately a factor 2 lower in the Super-X than the conventional configuration, in agreement with simulations. Detailed analysis of spectroscopy data from studies of the Super-X configuration reveal the importance of including plasma-molecule interactions and D 2 Fulcher band emission to properly quantify the rates of ionisation, plasma-molecule interactions and volumetric recombination processes governing divertor detachment. In H-mode with conventional and Super-X configurations, the outer divertors are attached in the former and detached in the latter with no impact on core or pedestal confinement.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Advanced development of double-injection, deep-impurity semiconductor switches

Deep-impurity, double-injection devices, commonly refered to as (DI) squared devices, represent a class of semiconductor switches possessing a very high degree of tolerance to electron and neutron irradiation and to elevated temperature operation. These properties have caused them to be considered as attractive candidates for space power applications. The design, fabrication, and testing of several varieties of (DI) squared devices intended for power switching are described. All of these designs were based upon gold-doped silicon material. Test results, along with results of computer simulations of device operation, other calculations based upon the assumed mode of operation of (DI) squared devices, and empirical information regarding power semiconductor device operation and limitations, have led to the conculsion that these devices are not well suited to high-power applications. When operated in power circuitry configurations, they exhibit high-power losses in both the off-state and on-state modes. These losses are caused by phenomena inherent to the physics and material of the devices and cannot be much reduced by device design optimizations. The (DI) squared technology may, however, find application in low-power functions such as sensing, logic, and memory, when tolerance to radiation and temperature are desirable (especially is device performance is improved by incorporation of deep-level impurities other than gold.

Hanes, M. H.↗

Plasma Surface Interactions: Predicting the Performance and Impact of Dynamic PFC Surfaces

This project focused on the development and integration of high-performance simulation tools to predict the operating behavior of Plasma-Facing Components in magnetic confinement fusion systems. A key objective at Illinois was to assess the impact of the dynamic interplay between the evolving material surface and the magnetized plasma sheath, and characterize the impact of tungsten-based PFCs on plasma contamination, including phenomena such as surface erosion, dynamic recycling of fuel species, and tritium retention, which are critical for the success of future magnetic fusion devices.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Role of Neutrals Versus Transport in Determining the Pedestal Density Structure: Final Technical Report

In fusion devices the plasma density plays a crucial role in determining the fusion reaction rate and has a direct impact on the fusion gain of a given device. This density is in general regulated by the particle sources and transport near the plasma edge, which give rise to an edge density pedestal. When predicting the performance of future devices, this density pedestal is often prescribed, rather than predicted, due to a lack of models which allow confident extrapolation. This project aims to advance these models through the focused validation of theoretical models related to the transport of fueling neutral particles, and through interpretive transport modeling in present day fusion plasmas, in which the penetration of neutrals is altered to better simulate future reactor-like conditions. Achievements in theory and model validation under this project have advanced our understanding of how much of the edge density profile is set by transport versus direct ionization, enabling interesting projections to future burning plasma devices.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Roadmap on Atomtronics: State of the art and perspective

Atomtronics deals with matter-wave circuits of ultracold atoms manipulated through magnetic or laser-generated guides with different shapes and intensities. In this way, new types of quantum networks can be constructed in which coherent fluids are controlled with the know-how developed in the atomic and molecular physics community. In particular, quantum devices with enhanced precision, control, and flexibility of their operating conditions can be accessed. Concomitantly, new quantum simulators and emulators harnessing on the coherent current flows can also be developed. Here, the authors survey the landscape of atomtronics-enabled quantum technology and draw a roadmap for the field in the near future. The authors review some of the latest progress achieved in matter-wave circuits' design and atom-chips. Atomtronic networks are deployed as promising platforms for probing many-body physics with a new angle and a new twist. The latter can be done at the level of both equilibrium and nonequilibrium situations. Numerous relevant problems in mesoscopic physics, such as persistent currents and quantum transport in circuits of fermionic or bosonic atoms, are studied through a new lens. The authors summarize some of the atomtronics quantum devices and sensors. Finally, the authors discuss alkali-earth and Rydberg atoms as potential platforms for the realization of atomtronic circuits with special features.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Assessment of the errors of high-fidelity two-qubit gates in silicon quantum dots

Achieving high-fidelity entangling operations between qubits consistently is essential for the performance of multi-qubit systems. Solid-state platforms are particularly exposed to errors arising from materials-induced variability between qubits, which leads to performance inconsistencies. Here we study the errors in a spin qubit processor, tying them to their physical origins. We use this knowledge to demonstrate consistent and repeatable operation with above 99% fidelity of two-qubit gates in the technologically important silicon metal-oxide-semiconductor quantum dot platform. Analysis of the physical errors and fidelities in multiple devices over extended periods allows us to ensure that we capture the variation and the most common error types. Physical error sources include the slow nuclear and electrical noise on single qubits and contextual noise that depends on the applied control sequence. Furthermore, we investigate the impact of qubit design, feedback systems and robust gate design to inform the design of future scalable, high-fidelity control strategies. Our results highlight both the capabilities and challenges for the scaling-up of silicon spin-based qubits into full-scale quantum processors.

Quantum dots↗

RF sheath induced sputtering on Proto-MPEX. I. Sheath equivalent dielectric layer for modeling the RF sheath

The pulsed linear plasma device Prototype Material Plasma Exposure eXperiment (Proto-MPEX) uses a radio frequency (RF) helicon antenna with an aluminum nitride ceramic window for plasma production. The RF sheath created under the helicon antenna is sufficient to cause ion impact energies to be greater than the sputtering threshold of the AlN helicon window material and for impurities to be created. In this study, we investigate the RF sheath on the inner diameter of the helicon window and its impact on the impurity production rates in Proto-MPEX. Three models—a 3D COMSOL finite element RF model of the Proto-MPEX helicon region, a rectified DC sheath potential model, and the 3D Global Impurity TRansport code—are coupled together to study impurity production and transportation. This novel method of impurity generation and transport modeling spans length scales ranging from the sheath (millimeters or less) up to the full device (meters) and can be applied to other radio frequency sources and antennas in a wide range of plasma physics studies, including basic plasmas, low-temperature processing plasmas, plasma thrusters, and fusion plasmas.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Performance Evaluation and Loss Modeling of WBG Devices based on a Novel Double-Pulse Test Method for Current Source Inverter

Careful measurements of the power device characteristics are necessary to accurately estimate a power converter's losses and efficiency. The conventional double-pulse test (DPT) circuit is a well-known method to implement this laboratory characterization of power devices and power modules. However, the switching characteristics of a power device depend on the power electronics circuit in which it is connected as well as the power circuit's physical layout, in addition to the device's internal structure. Hence, the conventional DPT circuit configuration, which is tailored for a standard voltage-source inverter (VSI), is not well-suited for a current-source inverter (CSI). This paper demonstrates a previously-proposed CSI-based DPT measurement technique that is appropriate for normal CSI operation. The characteristics of SiC MOSFETs and series-connected SiC Schottky diodes used in a CSI are measured using this improved technique while taking temperature effects into account to yield more accurate loss predictions. The CSI losses, including the switching and conduction losses of SiC MOSFETs and SiC Schottky diodes, have been modeled using this approach. The total CSI losses and efficiency have been estimated based on the CSI DPT results and loss models.

42 ENGINEERING↗

Load Mitigating Feedback Control of WECs

This report outlines the development of load-mitigating feedback control for wave energy converters. A simple, self-tuning multi-objective controller is demonstrated in simulation for a 3-DOF (surge, heave, pitch) point absorber. In previous work, the proposed control architecture has been shown to be effective in experiment for a variety of device archetypes for the single objective of the maximization of electrical power capture: here this architecture is extended to reduce device loading as well. In particular, PTO actuation forces and the minimization of fatigue damage (determined from the sum of wave-exerted and PTO forces) are considered as additional objectives for the self-tuning controller. This controller is demonstrated for two similar, but distinct systems: one described by the identified linear models from physical testing of the WaveBot device, and another based upon a WEC-Sim simulation that expands upon boundary element method data from the WaveBot device. In both cases, because the power surface is consistently fairly flat in the vicinity of control parameters that maximize power capture in contrasting sea-states, it is found to be generally possible to mitigate either fatigue damage or PTO load. However, PTO load is found to conflict with fatigue damage in some sea-states, limiting the efficacy of control objectives that attempt to mitigate both simultaneously. Additionally, coupling between the surge and pitch DOFs also limits the extent to which fatigue damage can be mitigated for both DOFs in some sea-states. Because control objectives can be considered a function of the sea-state (e.g., load mitigation may not be a concern until the sea is sufficiently large) a simple transition strategy is proposed and demonstrated. This transition strategy is found to be effective with some caveats: firstly, it cannot circumvent the aforementioned objective contradictions. Secondly, this objective transition is too slow to act as a system constraint, and objective thresholds must thus be considered quite conservatively. Improvement of the adjustment strategy is demonstrated through the addition of an integral term. Selection of well-performing transition parameters can be a function of sea-state. While a simple selection procedure is proposed, it is non-optimal, and a more robust selection procedure is suggested for future work.

16 TIDAL AND WAVE POWER↗

Optimization of Microelectronic Devices for Sensor Applications

The NASA/JPL goal to reduce payload in future space missions while increasing mission capability demands miniaturization of active and passive sensors, analytical instruments and communication systems among others. Currently, typical system requirements include the detection of particular spectral lines, associated data processing, and communication of the acquired data to other systems. Advances in lithography and deposition methods result in more advanced devices for space application, while the sub-micron resolution currently available opens a vast design space. Though an experimental exploration of this widening design space-searching for optimized performance by repeated fabrication efforts-is unfeasible, it does motivate the development of reliable software design tools. These tools necessitate models based on fundamental physics and mathematics of the device to accurately model effects such as diffraction and scattering in opto-electronic devices, or bandstructure and scattering in heterostructure devices. The software tools must have convenient turn-around times and interfaces that allow effective usage. The first issue is addressed by the application of high-performance computers and the second by the development of graphical user interfaces driven by properly developed data structures. These tools can then be integrated into an optimization environment, and with the available memory capacity and computational speed of high performance parallel platforms, simulation of optimized components can proceed. In this paper, specific applications of the electromagnetic modeling of infrared filtering, as well as heterostructure device design will be presented using genetic algorithm global optimization methods.

Cwik, Tom↗

Manipulating the metal-to-insulator transition and magnetic properties in manganite thin films via epitaxial strain

Strain engineering of epitaxial transition metal oxide heterostructures offers an intriguing opportunity to control electronic structures by modifying the interplay between spin, charge, orbital, and lattice degrees of freedom. Here, we demonstrate that the electronic structure, magnetic and transport properties of La 0.9 Ba 0.1 MnO 3 thin films can be effectively controlled by epitaxial strain. Spectroscopic studies and first-principles calculations reveal that the orbital occupancy in Mn eg orbitals can be switched from the d 3z 2 -r 2 orbital to the d x 2 -y 2 orbital by varying the strain from compressive to tensile. Further, the change of orbital occupancy associated with Mn 3d-O 2p hybridization leads to dramatic modulation of the magnetic and electronic properties of strained La 0.9 Ba 0.1 MnO 3 thin films. Under moderate tensile strain, an emergent ferromagnetic insulating state with an enhanced ferromagnetic Curie temperature of 215 K is achieved. These findings not only deepen our understanding of electronic structures, magnetic and transport properties in the La 0.9 Ba 0.1 MnO 3 system, but also demonstrate the use of epitaxial strain as an effective knob to tune the electronic structures and related physical properties for potential spintronic device applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Modeling and Design of the Triton OWC System (Final Report)

Two versions of the Triton Oscillating Water Column type device will be modeled in WEC Sim. First, a model of a wave-tank scale device which can be tuned and validated against tank test data. Second, a model of the deployment-scale device will be constructed following the method of the tank-scale device to ensure that relevant physics are captured. In the latter case, the geometry, PTO architecture, and other design details are not yet finalized, so the model will serve as a platform for design iteration as time and budget allows. A subset of this iteration will be automated using existing WEC-Sim capabilities. A primary focus of this work will be familiarizing Triton personnel with the WEC-Sim workflow and model details so that the model of the deployment device can continue to be enhanced after project end.

16 TIDAL AND WAVE POWER↗