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At least 415 records · Page 23

Sampling on NISQ Devices: "Who’s the Fairest One of All?"

Modern NISQ devices are subject to a variety of biases and sources of noise that degrade the solution quality of computations carried out on these devices. A natural question that arises in the NISQ era, is how fairly do these devices sample ground state solutions. To this end, we run five fair sampling problems (each with at least three ground state solutions) that are based both on quantum annealing and, on the Grover Mixer, -QAOA algorithm for gate-based NISQ hardware. In particular, we use seven IBM Q devices, the Aspen-9 Rigetti device, the IonQ device, and three D-Wave quantum annealers. For each of the fair sampling problems, we measure the ground state probability, the relative fairness of the frequency of each ground state solution with respect to the other ground state solutions, and the aggregate error as given by each hardware provider. Overall, our results show that NISQ devices do not achieve fair sampling yet. Furthermore, we also observe differences in the software stack with a particular focus on compilation techniques that illustrate what work will still need to be done to achieve a seamless integration of frontend (i.e., quantum circuit description) and backend compilation.

Computer Science↗

Training a Neural Network on Analog TaO x ReRAM Devices Irradiated With Heavy Ions: Effects on Classification Accuracy Demonstrated With CrossSim

The image classification accuracy of a TaO x ReRAM-based neuromorphic computing accelerator is evaluated after intentionally inducing a displacement damage up to a fluence of 10 14 2.5-MeV Si ions/cm 2 on the analog devices that are used to store weights. Results are consistent with a radiation-induced oxygen vacancy production mechanism. When the device is in the high-resistance state during heavy ion radiation, the device resistance, linearity, and accuracy after training are only affected by high fluence levels. Here, the findings in this paper are in accordance with the results of previous studies on TaO x -based digital resistive random access memory. When the device is in the low-resistance state during irradiation, no resistance change was detected, but devices with a 4-kΩ inline resistor did show a reduction in accuracy after training at 10 14 2.5-MeV Si ions/cm 2 . This indicates that changes in resistance can only be somewhat correlated with changes to devices’ analog properties. This paper demonstrates that TaO x devices are radiation tolerant not only for high radiation environment digital memory applications but also when operated in an analog mode suitable for neuromorphic computation and training on new data sets.

42 ENGINEERING↗

Technologies for Prolonging Cardiac Implantable Electronic Device Longevity

Prolonged longevity of cardiac implantable electronic devices (CIEDs) is needed not only as a passive response to match the prolonging life expectancy of patient recipients, but will also actively prolong their life expectancy by avoiding/deferring the risks (and costs) associated with device replacement. CIEDs are still exclusively powered by nonrechargeable primary batteries, and energy exhaustion is the dominant and an inevitable cause of device replacement. The longevity of a CIED is thus determined by the attrition rate of its finite energy reserve. The energy available from a battery depends on its capacity (total amount of electric charge), chemistry (anode, cathode, and electrolyte), and internal architecture (stacked plate, folded plate, and spiral wound). The energy uses of a CIED vary and include a background current for running electronic circuitry, periodic radiofrequency telemetry, high‐voltage capacitor reformation, constant ventricular pacing, and sporadic shocks for the cardiac resynchronization therapy defibrillators. The energy use by a CIED is primarily determined by the patient recipient's clinical needs, but the energy stored in the device battery is entirely under the manufacturer's control. A larger battery capacity generally results in a longer‐lasting device, but improved battery chemistry and architecture may allow more space‐efficient designs. Armed with the necessary technical knowledge, healthcare professionals and purchasers will be empowered to make judicious selection on device models and maximize the utilization of all their energy‐saving features, to prolong device longevity for the benefits of their patients and healthcare systems.

LAU, ERNEST W.↗

Device-Level Multidimensional Thermal Dynamics With Implications for Current and Future Wide Bandgap Electronics

Researchers have been extensively studying wide-bandgap (WBG) semiconductor materials such as gallium nitride (GaN) with an aim to accomplish an improvement in size, weight, and power of power electronics beyond current devices based on silicon (Si). However, the increased operating power densities and reduced areal footprints of WBG device technologies result in significant levels of self-heating that can ultimately restrict device operation through performance degradation, reliability issues, and failure. Typically, self-heating in WBG devices is studied using a single measurement technique while operating the device under steady-state direct current measurement conditions. However, for switching applications, this steady-state thermal characterization may lose significance since the high power dissipation occurs during fast transient switching events. Therefore, it can be useful to probe the WBG devices under transient measurement conditions in order to better understand the thermal dynamics of these systems in practical applications. In this work, the transient thermal dynamics of an AlGaN/GaN high electron mobility transistor (HEMT) were studied using thermoreflectance thermal imaging and Raman thermometry. Also, the proper use of iterative pulsed measurement schemes such as thermoreflectance thermal imaging to determine the steady-state operating temperature of devices is discussed. These studies are followed with subsequent transient thermal characterization to accurately probe the self-heating from steady-state down to submicrosecond pulse conditions using both thermoreflectance thermal imaging and Raman thermometry with temporal resolutions down to 15 ns.

42 ENGINEERING↗

Eye-Safe 1.5 and 2.0 Micron Laser Power Conversion Using Metamorphic InGaAs Photovoltaic Devices

Laser power transmission at 1.5 and 2.0 microns are considered eye-safe up to 0.1 W/cm2 irradiance. Further, the atmospheric bands at these two wavelengths may provide the highest optical transmission through the atmosphere in hazy conditions. By slowly changing the lattice-constant of InGaAs with a Compositionally Graded Buffer (CGB), we have fabricated InGaAs photovoltaic (PV) devices over a wide range of bandgaps useful for multijunction concentrating photovoltaic devices, thermophotovoltaic devices, and Laser Power Converters (LPC). Here, we have demonstrated monochromatic power conversion of 1.5-micron light with an eye-safe efficiency of 39.8% at 0.1 W/cm2 with InGaAs devices lattice-matched to InP with an Antireflection Coating (ARC). We have also demonstrated 30.2% and 24.5% eye-safe LPC efficiency of metamorphic InGaAs devices grown on GaAs substrates using GaInP and AlGaAsP CGBs, respectively. Finally, we have demonstrated metamorphic InGaAs devices grown on InP and GaAs substrates that are estimated to have eye-safe LPC efficiencies at 2.0 microns of 27.4% and 20.9% respectively. The efficiencies of all these LPC devices continues to increase up to about 30-70 times the eye-safe irradiance.

eye-safe↗

SU-E-J-48: Development of An Abdominal Compression Device for Respiratory Correlated Radiation Therapy

Purpose: The aim of this study is to develop the abdominal compression device which could control pressure level according to the abdominal respiratory motion and evaluate its feasibility. Methods: In this study, we focused on developing the abdominal compression device which could control pressure level at any point of time so the developed device is possible to use a variety of purpose (gating technique or respiratory training system) while maintaining the merit of the existing commercial device. The compression device (air pad form) was designed to be able to compress the front and side of abdomen and the pressure level of the abdomen is controlled by air flow. Pressure level of abdomen (air flow) was determined using correlation data between external abdominal motion and respiratory volume signal measured by spirometer. In order to verify the feasibility of the device, it was necessary to confirm the correlation between the abdominal respiratory motion and respiratory volume signal and cooperation with respiratory training system also checked. Results: In the previous study, we could find that the correlation coefficient ratio between diaphragm and respiratory volume signal measured by spirometer was 0.95. In this study, we confirmed the correlation between the respiratory volume signal and the external abdominal motion measured by belt-transducer (correlation coefficient ratio was 0.92) and used the correlated respiratory volume data as an abdominal pressure level. It was possible to control the pressure level with negligible time delay and respiratory volume data based guiding waveforms could be properly inserted into the respiratory training system. Conclusion: Through this feasibility study, we confirmed the correlation between the respiratory volume signal and the external abdominal motion. Also initial assessment of the device and its compatibility with the respiratory training system were verified. Further study on application in respiratory gated therapy and respiratory training system will be investigated. This work was supported by Radiation Technology R and D program (No. 2013M2A2A7043498)and Basic Atomic Energy Research Institute (BAERI)(No. NRF-2009-0078390) through the National Research Foundation of Korea funded by the Ministry of Science, ICT and Future Planning.

21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS↗

SU-C-213-07: Fabrication and Testing of a 3D-Printed Small Animal Rectal Cooling Device to Evaluate Local Hypothermia as a Radioprotector During Prostate SBRT

Purpose: The protective effects of induced or even accidental hypothermia on the human body are widespread with several medical uses currently under active research. In vitro experiments using human cell lines have shown hypothermia provides a radioprotective effect that becomes more pronounced at large, single-fraction doses common to SBRT treatments. Relevant to prostate SBRT, this work details the fabrication and testing of a 3D-printed cooling device to facilitate the investigation of the radioprotective effect of local hypothermia on the rat rectum. Methods: A 3cm long, two-channel rectal cooling device was designed in SOLIDWORKS CAD for 3D printing. The water intake nozzle is connected to a 1mm diameter brass pipe from which water flows and circulates back around to the exit nozzle. Both nozzles are connected by plastic tubing to a water chiller pump. Following leak-proof testing, fiber optic temperature probes were used to evaluate the temperature over time when placed adjacent to the cooling device within a rat rectum. MRI thermometry characterized the relative temperature distribution in concentric ROIs surrounding the probe. CBCT images from a small-animal irradiator were evaluated for imaging artifacts which could affect Monte Carlo dose calculations during treatment planning. Results: The rectal temperature adjacent to the cooling device decreased from body temperature (37°C) to 15°C in 10–20 minutes from device insertion. Rectal temperature was maintained at 15±3°C during active cooling. MRI thermometry tests revealed a steep temperature gradient with increasing distance from the cooling device, with the desired temperature range maintained within the surrounding few millimeters. Conclusion: A 3D printed rectal cooling device was fabricated for the purpose of inducing local hypothermia in rat rectums. Rectal cooling capabilities were characterized in-vivo to facilitate an investigation of the radioprotective effect of hypothermia for late rectal toxicity following a single large dose of radiation. Funding support provided by RSNA research seed grant.

60 APPLIED LIFE SCIENCES↗

SU-E-T-348: Effect of Treatment Table and Immobilization Devices On Surface Dose When Using a GRID Technique

Purpose: To determine the increase of surface dose of MLC-designed GRID therapy in the presence of immobilization devices and treatment table. Methods: To create a GRID field, our facility utilizes an MLC consisting of four millimeter wide leaves. The field is designed to have aperture sizes of 0.8 cm X 0.8 cm with inter-aperture distance of 3.2 cm. Gafchromic EBT3 film was placed between the surface of a solid water phantom and the immobilization device. The treatment table was also present within the beam path. The devices consist of carbon fiber exterior shell. A piece of film was also placed at maximal depth for the photon energy of 10 MV. Image files were converted to dose per a calibration curve based on the selected red channel. The surface dose to maximum dose was established by comparing the ratio of seven centrally located aperture regions-of-interest and four adjacent inter-aperture regions-of-interest were measured with the available software tools. Results: With no devices present in beam path, the ratio of surface dose to maximum dose was 11.5% ± 0.3% for aperture region and 7.0% ± 0.1% for inter-aperture region. When devices are present, the ratio of surface dose to maximum dose was 45.2% ± 0.5% and 33.8% ± 1.1%, respectively. Due to the presence of devices, the surface dose increases in aperture region by 3.8 times or in the inter-aperture region by 4.7 times. Conclusion: The purpose of using GRID technique is to deliver a single fractional dose in range of 15–20 Gy to a bulky lesion while also preserving skin tolerance. The increase of surface dose due to devices placed in beam path may increase the chance of skin toxicity in GRID therapy. Care should be used to determine best manageable patient immobilization while considering skin dose especially for posteriorly located lesions.

60 APPLIED LIFE SCIENCES↗

Gas Ingress and Egress of MEMS Multi-Chip Modules and MEMS Devices

Hermetic microcircuit packaging was the dominant method of protecting semiconductor devices in the 1960s and 1970s. After losing majority market sectors to plastic encapsulated microelectronics over the last a few decades, hermetic packaging remains the preferred method of protecting semiconductor devices for critical applications such as in military, space, and medical fields, where components and systems are required to serve for several decades. MEMS devices impose additional challenges to packaging by requiring specific internal cavity pressures to function properly or deliver the needed quality (Q) factors. In MEMS multichip modules, internal pressure requirement conflicts arise when different MEMS devices require different internal gases and pressures. The authors developed a closed-formed equation to model pressure changes of hermetic enclosures due to gas ingression. This article expands the authors mathematical model to calculate gas pressure of a MEMS multichip module package as well as those of MEMS devices inside the multichip module package. These equations are not only capable of calculating service lifetimes of MEMS devices and multi-chip modules but can also help develop MEMS device packaging strategies to extend the service life of MEMS multi-chip modules.

36 MATERIALS SCIENCE↗

Susceptibility Study of Audio Recording Devices to Electromagnetic Stimulations

Little research has been performed to study how intentional electromagnetic signals may couple into recording devices. An electromagnetic susceptibility study was performed on an analog tape recorder, a digital video camera, a wired computer microphone, and a wireless microphone system to electromagnetic interference. Devices were subjected to electromagnetic stimulations in the frequency range of 1-990 MHz and field strengths up to 4.9 V/m. Carrier and message frequencies of the stimulation signals were swept, and the impacts of device orientation and antenna polarization were explored. Message signals coupled into all devices only when amplitude modulated signals were used as stimulation signals. Test conditions that produced maximum sensitivity were highly specific to each device. Only narrow carrier frequency ranges could be used for most devices to couple messages into recordings. A basic detection technique using cross-correlation demonstrated the need for messages to be as long as possible to maximize message detection and minimize detection error. Analysis suggests that detectable signals could be coupled to these recording devices under realistic ambient conditions.

42 ENGINEERING↗

Embedded Volttron Specification - Benchmarking Small Footprint Compute Devices for Volttron

An embedded system is a small footprint computing unit that typically serves a specific purpose closely associated with measurements and control of hardware devices. These units are designed for reasonable durability and operations in a wide range of operating conditions. Some embedded systems support real-time operations and can demonstrate high levels of reliability. Many have failsafe mechanisms built to handle graceful shutdown of the device in exception conditions. The available memory, processing power, and network connectivity of these devices are limited due to the nature of their specific-purpose design and intended application. Industry practice is to carefully design the software for the available hardware capability to suit desired deployment needs. Volttron is an open source agent development and deployment platform designed to enable researchers to interact with devices and appliances without having to write drivers themselves. Hosting Volttron on small footprint embeddable devices enables its demonstration for embedded use. This report details the steps required and the experience in setting up and running Volttron applications on three small footprint devices: the Intel Next Unit of Computing (NUC), the Raspberry Pi 2, and the BeagleBone Black. In addition, the report also details preliminary investigation of the execution performance of Volttron on these devices.

97 MATHEMATICS AND COMPUTING↗

Re-Evaluation of Active Interlock Envelopes Considering Insertion Device Correction Coils

The Active Interlock (AI) is a system that ensures that the beam position and angle through the NSLS-II storage ring is located so that the machine apertures that may be struck by synchrotron radiation are not exposed to high power beam which may compromise them. Of particular importance in the NSLS-II is to maintain the beam position and angle within the insertion device (ID) straights where insertions devices make high power x-ray beams for users which may compromise the storage ring vacuum chamber. The beam position and angle in the center of the insertion device is calculated using a pair of beam position monitors (BPMs) on either side of the device. The safe area of positions and angles within the insertion device is called the AI envelope. If there is a magnetic element between the BPMs, it needs to be accounted for in the calculation of the beam position and angle. In addition to the permanent magnet arrays that comprise the insertion device itself, there are correction coils that are used to correct any orbit distortions that are generated by imperfections in the device. It has recently come to our attention that these coils are not considered in the AI calculations, nor are the currents in these coils read by the AI. As it may be possible in theory for these coils to produce angles large enough that the synchrotron radiation beam may damage components, we analyzed the possibility for all ID types and configurations. In this report we show what changes are necessary for the AI envelope, and limits placed upon the correction coils to maintain operation of the storage ring without compromising protection.

36 MATERIALS SCIENCE↗

Comparative Assessment of Experimental Testing of Instrument with an Embedded Digital Device Using Model-Based and Conventional Methods

The use of digital equipment has not been widespread in U.S. nuclear facilities. A major contributing factor to this situation arises from regulatory concerns about common cause failures (CCFs) stemming from the use of identical software in redundant systems, questions as to how to quantify the reliability of software-based products, validity of tools that are used for software verification and validation (V&V), and the effectiveness of software QA procedures. Compounding the concerns are sporadic incidents of digital equipment malfunctions in nuclear power plants, including lockups resulting from software memory leaks, feedwater control malfunctions due to excessive traffic on Ethernet networks, software logic errors, and other problems leading to plant trips. Additionally, the limited amount of demonstrated research and a lack of industry consensus on quantitative software reliability methodologies has hindered the widespread adoption of digital I&C in the nuclear industry. In a recent Regulatory Issue Summary (RIS), the U.S. Nuclear Regulatory Commission (NRC) identified concerns about the impact of greater use of instrumentation and control (I&C) equipment with an embedded digital device (EDD) [1]. Specifically, the NRC staff states that increased use of such devices “may increase a facility’s vulnerability to a CCF” (i.e., common-cause failure). The prevailing NRC guidance regarding software CCF (SCCF) identifies two design attributes that are acceptable for eliminating CCF concerns: (1) diversity or (2) testability (specifically, 100% testability). Either solution can result in high costs and remaining licensing uncertainty (i.e., how much diversity is enough? how to ensure test coverage of every possible sequence of device states?). Consequently, many utilities and reactor designers have limited or avoided more extensive use of digital technology to minimize licensing, scheduling, and financial risk. Without development of cost effective qualification methods to satisfy regulatory requirements and address the potential for CCF vulnerability associated with EDDs, the nuclear power industry may not be able to realize the benefits of digital technology achieved by other industries. In order to address these challenges, the U.S. Department of Energy (DOE) is sponsoring this research to assess the prospect of CCF in digital I&C equipment. The purpose of the current research is to develop an effective approach employing science-based methods to resolve concerns about CCF vulnerability that serve to inhibit deployment of advanced instrumentation (e.g., sensors, actuators, microcontrollers) with EDDs in nuclear power applications. The research objectives address the challenge of establishing high levels of safety and reliability assurance needed for the qualification of EDDs (e.g., microprocessors, programmable logic devices) that are subject to software design faults, complex failure modes, and CCF vulnerability. Specific objectives are: (1) assess the regulatory context for treatment of CCF vulnerability a graded approach to their qualification, (3) develop and extend model-based testing methods to enable effective demonstration of whether devices are subject to CCF, which may arise from vulnerabilities introduced at any stage of the design lifecycle, (4) establish a cost-effective testing framework that incorporates automation and test scenario prioritization, and (5) demonstrate the qualification approach through selection and testing of candidate digital device(s). This report documents an assessment of the results from experimental testing of a representative instrument with an embedded digital device. The experiment serves as a proof-of-concept demonstration of a model-based testing (MBT) framework. The objective of MBT is to ensure that an EDD undergoes suitably comprehensive testing to establish that it is not subject to SCCF. The approach by which MBT accomplishes this objective is through development and application of an effective test suite that provides the appropriate coverage to detect the full range of postulated faults that may arise at the requirements, design, and code (implementation) level of the EDD software. The findings of the experiment involve the application of the MBT framework by Ohio State University (OSU) through testing of the selected demonstration instrument (i.e., the prototype smart pressure sensor developed by Virginia Commonwealth University, VCU). In addition, the experiment findings also involve application of a more conventional black-box testing approach that serves as a baseline against which the MBT methodology can be compared. The primary outcome documented in this report is the comparative analysis of the capabilities demonstrated for each method. The results of the analysis demonstrate clear benefits that arise from the MBT methodology. The comparison indicates greater effectiveness from the more comprehensive evidence available through MBT and enhanced efficiency achieved through automation within the MBT framework. The structure of the report addresses the approach and application of each test method as well as the comparative analysis of the experimental results. Chapter 2 gives a summary overview of the demonstration approach. Chapter 3 covers the baseline testing and Chapter 4 documents the model-based testing. Chapter 5 describes the findings of the comparative analysis and presents the conclusions that can be drawn about the effectiveness and efficiency of the MBT methodology.

47 OTHER INSTRUMENTATION↗

Engineering of Lead Selenide Quantum Dot Based Devices and Core/Shell Heterostructures

Near infrared (NIR) emitting colloidal quantum dots (QDs) such as PbSe are interesting materials for implementation in various optoelectronic devices such as solar cells, photodetectors, and radiation detectors. Material properties like size tunable emission wavelengths, facile solution processability, the possibility of carrier multiplication and Auger assisted up-conversion, and high Z number provide PbSe QDs with unique advantages over many currently available commercial materials used in these devices. In this dissertation, after an introduction to QDs in general, we first focus on synthesis of PbSe-based heterostructured QDs for study via optical spectroscopy. PbSe/CdSe QDs synthesized via cation exchange reaction were used as seeds to study the proper conditions for further CdSe or CdS shell growth. Optical spectroscopy studies show that growth of thicker CdSe shells leads to tunable visible emission, while growth of thick CdS shells can greatly increase the photoluminescence quantum yield (PLQY) observed from the intermediate CdSe shell. NIR PL lifetimes can be greatly enhanced by the growth of CdS shells, due to strong delocalization of the hole wavefunction within the PbSe core, while the electron is delocalized throughout the QD including in the CdS shell, resulting in radiative lifetimes in the tens of microseconds. Two pulse delay measurements show that Auger assisted up conversion is also taking place in these engineered QD dot heterostructures. In the sections that follow, we look at QD devices, first with a focus on novel devices fabricated from PbSe QDs, using an amine synthesis method that allows for facile in-solution ligand exchange. QD film mobilities are measured for PbSe QDs capped with various short ionic ligands. Carrier densities in PbSe QD films are calculated from C-V measurements, showing for the first time that carrier densities can be modulated by simply changing the capping ligand. vii Radiation detectors utilizing PbSe QDs capped with KI and NH4I ligands show tangible response to incident alpha radiation. Current output response to alpha radiation is dependent on strength of radiation source and amount of bias voltage applied. In the final section a critical review of hybrid layered 2D-QD photodetectors is presented. In a typical example, PbSe and PbS QDs act as the absorbing layer in phototransistor devices which utilize layered 2D materials such as graphene and transition metal dichalcogenides as transport layers. Resulting devices display high gains and improved directivities compared to QD only and 2D only devices.

36 MATERIALS SCIENCE↗

Rapid Patterning and Advanced Device Structures for Low Cost Manufacturable Crystalline Si IBC Cells

Recent record efficiency Si cells have had an interdigitated back contact (IBC) design where both positive and negative contacts are fabricated on the back side of the Si wafer. Many industry groups have investigated IBC cells but used photolithography to pattern the rear contacts although it is considered impractical for low cost, high volume manufacturing. Alternative patterning methods using lasers and mechanical masking have been utilized in fabrication of patterned regions in IBC Si solar cells to replace photolithography. Another exciting advance in Si solar cell technology has been replacing the high temperature diffusion of doped regions inside the crystalline Si wafer with low temperature deposition of very thin layers of doped amorphous hydrogenated Si (a-Si:H) on the Si wafer. This is called a Si heterojunction (HJ) device. The a-Si:H provides excellent passivation of surface defects and has produced the highest open circuit voltages (VOC) of any Si solar cell device structure. The Institute of Energy Conversion (IEC) demonstrated the first IBC-HJ solar cell combining these two strategies in 2007 and has fabricated IBC-HJ cells with 20% efficiency using three photolithography steps. Despite the demonstrated efficiency potential of this device by industry groups (>26%) there is no commercial production because of the challenges of patterning and processing the structure in an industrial environment. Our work sought to address that challenge. The objective of this 3 year project was to develop the processing for the IBC-HJ Si solar cell using lasers for patterning and contact formation instead of photolithography. Laser patterning enables rapid, contactless manufacturing of patterned regions. We intensively studied laser fired contacts, laser patterning of the a-Si multi-layer stacks and metal layers and the use of plasma shadow masks. After an exhaustive focus in the first year on the laser fired emitter (LFE) and contact (LFC), we were unable to achieve VOC greater than 660 mV, compared to the 720 mV required to meet our milestones. We discovered that an additional issue with our original IBC structure was the presence of an inversion layer at the back surface connecting the p and n regions which reduced the VOC and fill factor (FF). We developed innovative methods for characterizing the inversion layer. These two limitations in the original design lead to development of a new IBC-HJ process sequence and device structure which we called Plasma Masked Laser Processed (PMLP). It retained the original high efficiency features including manufacturability. The LFC was replaced with a standard n-type a-Si HJ contact. The inversion layer was eliminated by replacing the previous p-type stack in the gap with an n-type or SiN stack. The PMLP used laser ablation of a multi-layer a-Si stack followed by chemical etching to open the n-contact. It required deposition of a patterned stack through a mask in the plasma deposition chamber. This turned out to be a source of significant problems due to inevitable unwanted deposition ‘leakage’ under the mask. This formed a blocking contact on the emitter which significantly reduced Voc and FF. Several iterations in PMLP device structure and chemical etching steps resulted in a large improvements, e.g. the efficiency increasing from 3 to 15% and Voc from 450 to 660 mV but they were unable to completely eliminate it. The best IBC-HJ device we fabricated had only 15% efficiency. For perspective, our standard FHJ devices had 20% efficiency.

14 SOLAR ENERGY↗

Assessment of the Electrical Substation-Grid Testbed with Inside/Outside Devices and Distributed Ledger Technology

The electrical substation-grid testbed was created to integrate the GOOSE and/or DNP (Distributed Network Protocol) messages with time synchronized sources and Distributed Ledger Technology (DLT). The objective was to study the impact of faults and cyber-events at an electrical substation with inside (protective relays) and outside (power meters) substation devices. The electrical substation-grid testbed was based on the design of a 34.5/ 12.47 kV electrical substation (sectionalized bus configuration) with two power transformers, connected to radial power lines and load feeders. The electrical substation-grid testbed was installed at 252 lab space (Advanced Power System Protection), Grid Research Integration and Deployment Center (GRID-C), Oak Ridge National Laboratory. This testbed was created for Task 5, DarkNet project. The electrical substation-grid testbed was created to simulate fault and/or cyber events that could potentially result in damage to the electrical infrastructure. In addition, tests were run that are usually not allowed to be performed in an operational electrical power grid, because these test scenarios could trip breakers and/or generate fault situations that could potentially damage equipment. The number of tests performed in the electrical substation-grid testbed were executed in a better way than in a real electrical substation and/or power grid, because multiple tests could be run in a short period of time, and complex permits, and safety/ schedule restrictions like in a real electrical substation environment were not needed. The electrical substation-grid testbed was created using real measurement, communication, and protection devices that are used by electrical utilities, to have same conditions that we could observe in a real power grid or electrical substation. The electrical substation-grid testbed was based on using a real time simulator and expansion box with amplifiers that were wired to electrical substation-grid devices. This hardware-in-the-loop (HIL) was provided by protective relays, power meters, ethernet switches, remote terminal units, synchronized timing network clock, DLT devices, workstations, and servers. This report includes the design, installation, and assessment of the electrical substation-grid testbed that was similar to an operational electrical substation, integrating the power system protection, communication, and control systems. The results for the electrical substation-grid testbed were based on:• verifying the analog signals for protective relays and power meters, • observing the synchronized time source frame at devices, • authenticating the GOOSE (IEC 61850) and DNP messages from power meters and protective relays, and • verifying the trip conditions of protective relays at fault tests with the power system fault event detection, using DLT devices. For future work, the electrical substation-grid testbed with protective relays and power meters, using DLT and synchronized time source from DarkNet, will be used to study the impact of cyber-events at inside and outside substation devices. Advanced algorithms for detecting cyber-events produced by non-desired protective relay settings will be studied, to improve the detection and reliability of protection, control, and communication systems at power grids.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Implementation of WBG devices in circuits - Electric Drive Technologies Project (Final Technical Report)

The objective of the project is to ensure that SiC devices are reliable and rugged as required in automotive applications for operational life of 300,000 hrs and create new device designs to address various weaknesses in currently available commercial devices. OSU has worked closely with SUNY Polytechnic. OSU has carried out the reliability and ruggedness evaluations of commercial devices as well as those fabricated by SUNY Polytechnic, discussed the results with SUNY Poly, and collaborated with the PI at SUNY Poly to improve the designs with respect to reliability/ruggedness. OSU work focused on reliability/ruggedness evaluation of SiC devices by individually testing them and then evaluate them in a 10 kW, 3 phase inverter system built with a specific purpose of stressing devices using realistic drive cycles such as a 10-minute hill climb. It should be noted that the primary purpose of the 10 kW inverter is to provide a platform for stressing the SiC devices under accelerated but realistic drive conditions.

33 ADVANCED PROPULSION SYSTEMS↗

Estimation of dose delivered to accelerator devices from stripping of 18.5 MeV/n 238 U ions using the FLUKA code

In Korea, a heavy ion accelerator facility (RAON) has been designed for production of rare isotopes. The 90° bending section of this accelerator includes a 1.3-μm-carbon stripper followed by two dipole magnets and other devices. An incident beam is 18.5 MeV/n 238 U 33+,34+ ions passing through the carbon stripper at the beginning of the section. The two dipoles are tuned to transport 238 U ions with specific charge states of 77+, 78+, 79+, 80+ and 81+. Then other ions will be deflected at the bends and cause beam losses. These beam losses are a concern to the devices of transport/beam line. The absorbed dose in devices and prompt dose in the tunnel were calculated using the FLUKA code in order to estimate radiation damage of such devices located at the 90° bending section and for the radiation protection. A novel method to transport multi-charged 238 U ions beam was applied in the FLUKA code by using charge distribution of 238 U ions after the stripper obtained from LISE++ code. The calculated results showed that the absorbed dose in the devices is influenced by the geometrical arrangement. The maximum dose was observed at the coils of first, second, fourth and fifth quadruples placed after first dipole magnet. The integrated doses for 30 years of operation with 9.5 pμA 238 U ions were about 2 MGy for those quadrupoles. In conclusion, the protection of devices particularly, quadruples would be necessary to reduce the damage to devices. Furthermore, results showed that the prompt radiation penetrated within the first 60 - 120 cm of concrete.

43 PARTICLE ACCELERATORS↗