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At least 415 records · Page 23
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Quasiparticle and Optical Properties of Carrier-Doped Monolayer MoTe 2 from First Principles

The intrinsic weak and highly nonlocal dielectric screening of two-dimensional materials is well-known to lead to high sensitivity of their optoelectronic properties to environment. Less studied theoretically is the role of free carriers in those properties. In this report we use ab initio GW and Bethe-Salpeter equation calculations, with a rigorous treatment of dynamical screening and local-field effects, to study the doping dependence of the quasiparticle and optical properties of a monolayer transition-metal dichalcogenide, 2H MoTe 2 . Here we predict a quasiparticle band gap renormalization of several hundreds of meV for experimentally attainable carrier densities and a similarly sizable decrease in the exciton binding energy. This results in an almost constant excitation energy for the lowest-energy exciton resonance with an increasing doping density. Using a newly developed and generally applicable plasmon-pole model and a self-consistent solution of the Bethe-Salpeter equation, we reveal the importance of accurately capturing both dynamical and local-field effects to understand detailed photoluminescence measurements.

2D material↗
DOE OSTI2024

Hole Relaxation Bottlenecks in CdSe/CdTe/CdSe Lateral Heterostructures Lead to Bicolor Emission

Concentric lateral CdSe/CdTe/CdSe heterostructures show bicolor photoluminescence from both a red charge transfer band of the CdSe/CdTe interface and a green fluorescence from CdSe. Further, this work uses visible and near-infrared transient spectroscopy measurements to demonstrate that the deviation from Kasha's rule arises from a hole relaxation bottleneck from CdSe to CdTe. Hole transfer can take up to 1 ns, which permits radiative relaxation of excitons remaining in CdSe. Simulations indicate that the hole relaxation bottleneck arises due to the sparse density of states and poor spatial overlap of hole states at energies near the CdSe band edge. The divergent kinetics of transfer for band edge and hot holes is exploited to vary the ratio of green and red photoluminescence with excitation wavelength, providing another knob to control emission color. These findings support the use of lateral heterojunctions as a method for slowing carrier relaxation in two-dimensional materials.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

Low-Frequency Interlayer Raman Modes to Probe Interface of Twisted Bilayer MoS 2

A variety of van der Waals homo- and hetero- structures assembled by stamping monolayers together present optoelectronic properties suitable for diverse applications. Understanding the details of the interlayer stacking and resulting coupling is crucial for tuning these properties. Twisted bilayer transition metal dichalcogenides offer a great platform for developing a precise understanding of the structure/property relationship. Here, we study the low-frequency interlayer shear and breathing Raman modes (<50 cm-1) in twisted bilayer MoS 2 by Raman spectroscopy and first-principles modeling. Twisting introduces both rotational and translational shifts and significantly alters the interlayer stacking and coupling, leading to notable frequency and intensity changes of low-frequency modes. The frequency variation can be up to 8 cm-1 and the intensity can vary by a factor of ~5 for twisting near 0 and 60 , where the stacking is a mixture of multiple high-symmetry stacking patterns and is thus especially sensitive to twisting. Moreover, for twisting angles between 20 and 40 , the interlayer coupling is nearly constant since the stacking results in mismatched lattices over the entire sample. It follows that the Raman signature is relatively uniform. Interestingly, unlike the breathing mode, the shear mode is extremely sensitive to twisting: it disappears between 20 and 40 as its frequency drops to almost zero due to the stacking-induced mismatch. Note that for some samples, multiple breathing mode peaks appear, indicating non-uniform coupling across the interface. In contrast to the low-frequency interlayer modes, high-frequency intralayer Raman modes are much less sensitive to interlayer stacking and coupling, showing negligible changes upon twisting. Our research demonstrates the effectiveness of low-frequency Raman modes for probing the interfacial coupling and environment of twisted bilayer MoS2, and potentially other two-dimensional materials and heterostructures.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Grain Boundary-Limited Thermal Transport in Suspended Thin Graphite across an Unexplored Thickness Regime

Here, we present systematic thermal conductivity (κ) measurements of suspended thin graphite ribbons, 234–527 nm thick, using a four-probe 3ω method. Unlike recent reports of phonon hydrodynamics and exceptionally high κ in micrometer-thick graphite ( Science, 2020), we observe significantly lower κ and no signatures of collective phonon flow in this intermediate thickness regime. Instead, our measured κ lies between few-layer graphene and bulk graphite. These results agree with a first-principles-informed Peierls–Boltzmann transport model with spatially resolved Monte Carlo sampling. Additionally, the temperature for the peak κ shifts lower with increasing thickness, due to the interplay of phonon-boundary and phonon-isotope scattering. Incorporating grain boundary scattering into simulations is necessary to replicate the experimental trends. These findings delineate the boundary between ballistic, hydrodynamic, and diffusive transport regimes in graphite and underscore the dominant role of disorder and geometry in phonon transport in quasi-two-dimensional materials, offering insights for nanoscale thermal management.

Boltzmann transport model↗
DOE OSTI2017

Anisotropic Etching of Hexagonal Boron Nitride and Graphene: Question of Edge Terminations

Here, chemical vapor deposition (CVD) has been established as the most effective way to grow large area two-dimensional materials. Direct study of the etching process can reveal subtleties of this competing with the growth reaction and thus provide the necessary details of the overall growth mechanism. Here we investigate hydrogen-induced etching of hBN and graphene and compare the results with the classical kinetic Wulff construction model. Formation of the anisotropically etched holes in the center of hBN and graphene single crystals was observed along with the changes in the crystals' circumference. We show that the edges of triangular holes in hBN crystals formed at regular etching conditions are parallel to B-terminated zigzags, opposite to the N-terminated zigzag edges of hBN triangular crystals. The morphology of the etched hBN holes is affected by a disbalance of the B/N ratio upon etching and can be shifted toward the anticipated from the Wulff model N-terminated zigzag by etching in a nitrogen buffer gas instead of a typical argon. For graphene, etched hexagonal holes are terminated by zigzag, while the crystal circumference is gradually changing from a pure zigzag to a slanted angle resulting in dodecagons.

2D materials↗
DOE OSTI2017

Dynamic Optical Tuning of Interlayer Interactions in the Transition Metal Dichalcogenides

Modulation of weak interlayer interactions between quasi-two-dimensional atomic planes in the transition metal dichalcogenides (TMDCs) provides avenues for tuning their functional properties. Here we show that above-gap optical excitation in the TMDCs leads to an unexpected large-amplitude, ultrafast compressive force between the two-dimensional layers, as probed by in situ measurements of the atomic layer spacing at femtosecond time resolution. We show that this compressive response arises from a dynamic modulation of the interlayer van der Waals interaction and that this represents the dominant light-induced stress at low excitation densities. A simple analytic model predicts the magnitude and carrier density dependence of the measured strains. Furthermore, this work establishes a new method for dynamic, nonequilibrium tuning of correlation-driven dispersive interactions and of the optomechanical functionality of TMDC quasi-two-dimensional materials.

2D materials↗
DOE OSTI2018

Theory and Ab Initio Computation of the Anisotropic Light Emission in Monolayer Transition Metal Dichalcogenides

Monolayer transition metal dichalcogenides (TMDCs) are direct gap semiconductors with a unique potential for use in ultrathin light emitters. However, their photoluminescence (PL) is not completely understood. We develop an approach to compute the radiative recombination rate in monolayer TMDCs as a function of photon emission direction and polarization. Using exciton wavefunctions and energies obtained with the ab initio Bethe-Salpeter equation, we obtain polar plots of the PL for different scenarios. Our results can explain the PL anisotropy and polarization dependence measured in recent experiments and predict that light is emitted with a peak intensity normal to the exciton dipole in monolayer TMDCs. We show that excitons emit light anisotropically upon recombination when they are in any quantum superposition state of the K and K' inequivalent valleys. When averaged over the emission angle and exciton momentum, our new treatment recovers the temperature-dependent radiative lifetimes that we previously derived. Our work demonstrates a generally applicable first-principles approach to studying anisotropic light emission in two-dimensional materials.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Tip-Enhanced Raman Scattering from Nanopatterned Graphene and Graphene Oxide

Tip-enhanced Raman spectroscopy (TERS) is particularly sensitive to analytes residing at plasmonic tip-sample nanojunctions, where the incident and scattered optical fields may be localized and optimally enhanced. However, the enhanced local electric fields in this so-called gap-mode TERS configuration are nominally orthogonal to the sample plane. As such, any given Raman active vibrational Eigenstate needs to have projections (of its polarizability derivative tensor elements) along the sample normal to be detectable via TERS. The faint TERS signals observed from two prototypical systems, namely, pristine graphene and graphene oxide are a classical example of the aforementioned rather restrictive TERS selection rules in this context. In this study, we demonstrate that nano-indentation, herein achieved using pulsed-force lithography with a sharp single-crystal diamond atomic force microscope probe, may be used to locally enhance TERS signals from graphene and graphene oxide flakes on gold. Nano-indentation locally perturbs the otherwise flat graphene structure and introduces out-of-plane protrusions that generate enhanced TERS. Although our approach is nominally invasive, we illustrate that the introduced nano-defects are highly localized, as evidenced by TERS nanoscale chemical mapping. As such, the described protocol may be used to extend and generalize the applicability of TERS for the rapid identification of two-dimensional material systems on the nanoscale. KEYWORDS

Bhattarai, Ashish↗
DOE OSTI2019

Monolayer Ti 3 C 2 T x as an Effective Co-catalyst for Enhanced Photocatalytic Hydrogen Production over TiO 2

Titanium dioxide (TiO 2 ) represents a promising candidate for hydrogen production via photocatalysis. Yet, its large bandgap and fast charge recombination limits its efficiency. To overcome this limitation, we explored in this work two-dimensional titanium carbide MXene, Ti 3 C 2 T x ( T x = O, OH, F), as feasible co-catalysts for hydrogen production with TiO 2 as the photocatalyst. We synthesized a series of Ti 3 C 2 T x /TiO 2 composite photocatalysts with monolayer Ti 3 C 2 T x as the co-catalyst to improve the separation of photoinduced electrons and holes. The physicochemical properties of the Ti 3 C 2 T x /TiO 2 composites were investigated by a variety of characterization techniques, and the effect of the monolayer Ti 3 C 2 T x on the photocatalytic performance of the Ti 3 C 2 T x /TiO 2 composites is elucidated by comparison to the multilayer counterpart. The photocatalytic hydrogen evolution rate of the optimized monolayer Ti 3 C 2 T x /TiO 2 composite is over 9 times higher than that of the pure TiO 2 and 2.5 times higher than the multilayer counterpart. The significantly enhanced activity is attributed to the superior electrical conductivity of monolayer Ti 3 C 2 T x and charge-carrier separation at the MXene/TiO 2 interface. A mechanism of photocatalytic hydrogen evolution over the Ti 3 C 2 T x /TiO 2 system is proposed. Our work reports on the potential of monolayer MXenes as effective co-catalysts for photocatalysis and further broadens the applications of the MXene family of two-dimensional materials.

08 HYDROGEN↗
DOE OSTI2021

Probing the In Situ Pseudocapacitive Charge Storage in Ti 3 C 2 MXene Thin Films with X-ray Reflectivity

MXenes are a large family of two-dimensional materials that are attractive for energy storage due to their high-rate charging capabilities as well as for electrochemical actuators, water purification, and many other technologies. Ion intercalation during electrochemically driven charge and discharge processes is the fundamental process associated with MXene functionality, which we have characterized here using in situ and operando X-ray reflectivity (XRR). Experiments performed at the Advanced Photon Source at Argonne National Laboratory monitored the changes in the structure of a Ti 3 C 2 MXene film on a platinum current collector as a function of static applied potential between 0.3 and –0.7 V vs Ag/AgCl in an aqueous 0.1 M Li 2 SO 4 electrolyte. Negative potential sweeps lead to a contraction of 1.2 Å in the interlayer spacing and a loss of electron density between the layers, likely due to Li + ion insertion and water removal. The change in lattice spacing includes a continuous variation vs potential as well as an additional discrete contraction that occurs near –0.35 V that has the characteristics of a first-order transition. The continuous change in the MXene interlayer spacing is associated with the capacitive charge, while the discrete change in structure correlated to the weak feature in the cyclic voltammogram at –0.35 V can be interpreted as either a pseudocapacitive charging process or a potential-dependent change in capacity.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Significant Role of Oxygen Dopants in Photocatalytic PFCA Degradation over h-BN

The activation of the C(sp 3 )–F bond is extremely difficult due to its unreactive nature. The importance of this bond activation is recently highlighted because extensive distribution of perfluorocarboxylic acids (PFCAs) (C n F 2n+1 COOH) has emerged as a challenging environmental issue. Photocatalytic degradation of PFCAs over a few semiconducting light absorbers is known to remove these water and soil resilient contaminants but with limited efficiency. This work reports density functional theory calculations, through which we present a detailed mechanistic study of photocatalytic degradation of CF 3 COOH (the shortest member of the PFCA family) over hexagonal boron nitride (h-BN). Here, our results clearly demonstrate that the existence of point defects is necessary to activate the h-BN plane for photocatalytic dissociation of the C–F bond. Specifically, we show that vacancies create strong Lewis acid or base sites (B or N vacancy, respectively) that facilitate the activation of the C(sp 3 )–F bond considerably. Furthermore, this study presents vivid theoretical evidence for the significant role of oxygen dopants, which mitigate the strength of the active sites and promote PFCA degradation over h-BN. Our calculations suggest that while the very stable intermediates generated during the reaction, in the case of h-BN with B or N vacancies, practically poison the catalyst, oxygen dopants make the degradation much more plausible and controllable. This work thus provides both an explanation for recently observed photocatalytic activity of h-BN to decompose PFCAs and valuable insights for exploring defected two-dimensional materials for activating and removing the fluorine-containing contaminants from water and soil.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2017

Gas Separation through Bilayer Silica, the Thinnest Possible Silica Membrane

Membrane-based gas separation processes can address concerns in energy and environment, but for many applications the permeance and selectivity of bulk membranes is insufficient for economical use. Theory and experiment suggest that permeance and selectivity can be increased by using two-dimensional materials with subnanometer pores as membranes. Motivated by experiments showing selective permeation of H 2 /CO mixtures through amorphous silica bilayers, here we perform a theoretical study of gas separation through silica bilayers. Using density functional theory calculations, we obtain geometries of crystalline free-standing silica bilayers (comprised of six-membered rings), as well as the seven-, eight-, and nine-membered rings that are observed in glassy silica bilayers, which arise due to Stone–Wales defects and vacancies. We then compute the potential energy barriers for gas passage through these various pore types for He, Ne, Ar, Kr, H 2 , N 2 , CO, and CO 2 gases, and use the data to assess their capability for selective gas separation. Our calculations indicate that crystalline bilayer silica, which is less than a nanometer thick, can be a high-selectivity and high-permeance membrane material for 3 He/ 4 He, He/natural gas, and H 2 /CO separations.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

High Throughput Data-Driven Design of Laser-Crystallized 2D MoS 2 Chemical Sensors: A Demonstration for NO 2 Detection

High throughput characterization and processing techniques are becoming increasingly necessary to navigate multivariable, data-driven design challenges for sensors and electronic devices. For two-dimensional materials, device performance is highly dependent upon a vast array of material properties including the number of layers, lattice strain, carrier concentration, defect density, and grain structure. In this work, laser crystallization was used to locally pattern and transform hundreds of regions of amorphous MoS 2 thin films into 2D 2H-MoS 2 . Here a high throughput Raman spectroscopy approach was subsequently used to assess the process-dependent structural and compositional variations for each illuminated region, yielding over 6000 distinct nonresonant, resonant, and polarized Raman spectra. The rapid generation of a comprehensive library of structural and compositional data elucidated important trends between structure–property processing relationships involving laser-crystallized MoS 2 , including the relationships between grain size, grain orientation, and intrinsic strain. Moreover, extensive analysis of structure/property relationships allowed for intelligent design and evaluation of major contributions to device performance in MoS 2 chemical sensors. In particular, it is found that NO 2 sensor performance is strongly dependent on the orientation of the MoS 2 grains relative to the crystal plane.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Photoluminescence Induced by Substitutional Nitrogen in Single-Layer Tungsten Disulfide

The electronic and optical properties of two-dimensional materials can be strongly influenced by defects, some of which can find significant implementations, such as controllable doping, prolonged valley lifetime, and single-photon emissions. Here, we demonstrate that defects created by remote N 2 plasma exposure in single-layer WS 2 can induce a distinct low-energy photoluminescence (PL) peak at 1.59 eV, which is in sharp contrast to that caused by remote Ar plasma. This PL peak has a critical requirement on the N 2 plasma exposure dose, which is strongest for WS 2 with about 2.0% sulfur deficiencies (including substitutions and vacancies) and vanishes at 5.6% or higher sulfur deficiencies. Both experiments and first-principles calculations suggest that this 1.59 eV PL peak is caused by defects related to the sulfur substitutions by nitrogen, even though low-temperature PL measurements also reveal that not all the sulfur vacancies are remedied by the substitutional nitrogen. The distinct low-energy PL peak suggests that the substitutional nitrogen defect in single-layer WS 2 can potentially serve as an isolated artificial atom for creating single-photon emitters, and its intensity can also be used to monitor the doping concentrations of substitutional nitrogen.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Substrate-Directed Underlayer Growth of Bilayer MoS 2 Revealed by Mo Isotope Labeling

Direct control over the vertical formation sequence and stacking registry in van der Waals (vdW) bilayers is essential for device performance and moiré engineering yet difficult to resolve unambiguously with conventional probes. Here, we use Mo isotope labeling in a two-step chemical vapor deposition process to synthesize bilayer MoS 2 and trace its vertical formation on common substrates. By combining site-selective laser thinning, Raman spectroscopy, time-of-flight secondary ion mass spectrometry, and atomic-resolution scanning transimission electron microscopy (STEM), we find a clear substrate dependence: on SiO 2 /Si, the second layer nucleates and grows beneath the first (underlayer), whereas on sapphire, it forms on top (overlayer). Density functional theory indicates that a larger equilibrium interfacial separation and weaker MoS 2 –substrate interactions on amorphous SiO 2 permit confined interfacial diffusion and underlayer nucleation, whereas stronger interactions and smaller separations on sapphire favor overlayer growth. On SiO 2 , confined epitaxy templates commensurate 2H, 3R, and mixed bilayers, as confirmed by second harmonic generation spectroscopy and STEM. During underlayer coalescence, embedded mirror-twin grain boundaries stitch atomically sharp 2H|3R junctions via alternating 4|8 ring motifs. Molecular-dynamics simulations reveal that these alternating 4|8 motifs accommodate interlayer vdW coupling and locally modulate the stacking registry. These results provide mechanistic insight into confined epitaxial growth and establish isotope labeling as a powerful probe of two-dimensional materials synthesis.

MoS2↗
DOE OSTI2017

Photoresponse of Natural van der Waals Heterostructures

Van der Waals heterostructures consisting of two-dimensional materials offer a platform to obtain materials by design and are very attractive owing to unique electronic states. Research on 2D van der Waals heterostructures (vdWH) has so far been focused on fabricating individually stacked atomically thin unary or binary crystals. Such systems include graphene, hexagonal boron nitride, and members of the transition metal dichalcogenide family. In this paper, we present our experimental study of the optoelectronic properties of a naturally occurring vdWH, known as franckeite, which is a complex layered crystal composed of lead, tin, antimony, iron, and sulfur. We present here that thin film franckeite (60 nm < d < 100 nm) behaves as a narrow band gap semiconductor demonstrating a wide-band photoresponse. We have observed the band-edge transition at ~1500 nm (~830 meV) and high external quantum efficiency (EQE ≈ 3%) at room temperature. Laser-power-resolved and temperature-resolved photocurrent measurements reveal that the photocarrier generation and recombination are dominated by continuously distributed trap states within the band gap. To understand wavelength-resolved photocurrent, we also calculated the optical absorption properties via density functional theory. Finally, we have shown that the device has a fast photoresponse with a rise time as fast as ~1 ms. Finally, our study provides a fundamental understanding of the optoelectronic behavior in a complex naturally occurring vdWH, and may pave an avenue toward developing nanoscale optoelectronic devices with tailored properties.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Tuning Electronic Structure of Single Layer MoS 2 through Defect and Interface Engineering

Transition-metal dichalcogenides (TMDs) have emerged in recent years as a special group of two-dimensional materials and have attracted tremendous attention. Among these TMD materials, molybdenum disulfide (MoS 2 ) has shown promising applications in electronics, photonics, energy, and electrochemistry. In particular, the defects in MoS 2 play an essential role in altering the electronic, magnetic, optical, and catalytic properties of MoS 2 , presenting a useful way to engineer the performance of MoS 2 . The mechanisms by which lattice defects affect the MoS 2 properties are unsettled. In this work, we reveal systematically how lattice defects and substrate interface affect MoS 2 electronic structure. We fabricated single-layer MoS 2 by chemical vapor deposition and then transferred onto Au, single-layer graphene, hexagonal boron nitride, and CeO 2 as substrates and created defects in MoS 2 by ion irradiation. Here, we assessed how these defects and substrates affect the electronic structure of MoS 2 by performing X-ray photoelectron spectroscopy, Raman and photoluminescence spectroscopies, and scanning tunneling microscopy/spectroscopy measurements. Molecular dynamics and first-principles based simulations allowed us to conclude the predominant lattice defects upon ion irradiation and associate those with the experimentally obtained electronic structure. We found that the substrates can tune the electronic energy levels in MoS 2 due to charge transfer at the interface. Furthermore, the reduction state of CeO 2 as an oxide substrate affects the interface charge transfer with MoS 2 . The irradiated MoS 2 had a faster hydrogen evolution kinetics compared to the as-prepared MoS 2 , demonstrating the concept of defect controlled reactivity in this phase. Our findings provide effective probes for energy band and defects in MoS 2 and show the importance of defect engineering in tuning the functionalities of MoS 2 and other TMDs in electronics, optoelectronics, and electrochemistry.

42 ENGINEERING↗
DOE OSTI2018

Multi-Step Lithiation of Tin Sulfide: An Investigation Using In Situ Electron Microscopy

Two-dimensional metal sulfides have been widely explored as promising electrodes for lithium ion batteries since their two-dimensional layered structure allows lithium ions to intercalate between layers. For tin disulfide, the lithiation process proceeds via a sequence of three different types of reactions: intercalation, conversion, and alloying but the full scenario of reaction dynamics remains nebulous. In this paper, we investigate the dynamical process of the multi-step reactions using in situ electron microscopy and discover an intermediate rock-salt phase with the disordering of Li and Sn cations, after the initial 2-dimensional intercalation. The disordered cations occupy all the octahedral sites and block the channels for intercalation, which alter the reaction pathways during further lithiation. Our first principles calculations of the non-equilibrium lithiation of SnS2 corroborate the energetic preference of the disordered rock-salt structure over known layered polymorphs. The in situ observations and calculations suggest a two-phase reaction nature for intercalation, disordering, and following conversion reactions. In addition, in situ de-lithiation observation confirms that the alloying reaction is reversible while the conversion reaction is not, which is consistent to the ex situ analysis. This work reveals the full lithiation characteristic of SnS2 and sheds light on the understanding of complex multistep reactions in two-dimensional materials.

25 ENERGY STORAGE↗