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At least 415 records · Page 23

Superconducting critical fields of alkali and alkaline-earth intercalates of MoS2

Results are reported for measurements of the critical-field anisotropy and temperature dependence of group-VIB semiconductor MoS2 intercalated with the alkali and alkaline-earth metals Na, K, Rb, Cs, and Sr. The temperature dependences are compared with present theories on the relation between critical field and transition temperature in the clean and dirty limits over the reduced-temperature range from 1 to 0.1. The critical-field anisotropy data are compared with predictions based on coupled-layers and thin-film ('independent-layers') models. It is found that the critical-field boundaries are steep in all cases, that the fields are greater than theoretical predictions at low temperatures, and that an unusual positive curvature in the temperature dependence appears which may be related to the high anisotropy of the layer structure. The results show that materials with the largest ionic intercalate atom diameters and hexagonal structures (K, Rb, and Cs compounds) have the highest critical temperatures, critical fields, and critical-boundary slopes; the critical fields of these materials are observed to exceed the paramagnetic limiting fields.

Woollam, J. A.↗

Infrared photoresponse of silicon devices at 1.15 microns

The photoconductive absorption of silicon devices at 1.15 microns is through band-to-band transitions with the simultaneous absorption of a 57.7 meV phonon. Its temperature dependence arises both from the changing phonon population and, more significantly, from the change in silicon bandgap with temperature. The temperature dependence of the photoresponse of quasi-intrinsic silicon samples is in good agreement with the optical absorption data of Macfarlane et al. More heavily doped silicon devices show a photoresponse extending to a lower temperature and having a smaller temperature dependence than intrinsic silicon. This is explained in terms of bandgap narrowing. Comparison with theoretical curves enables the resolution of bandgap reductions at the meV level.

Lanyon, H. P. D.↗

Total Dose Effects on Bipolar Integrated Circuits at Low Temperature

Total dose damage in bipolar integrated circuits is investigated at low temperature, along with the temperature dependence of the electrical parameters of internal transistors. Bandgap narrowing causes the gain of npn transistors to decrease far more at low temperature compared to pnp transistors, due to the large difference in emitter doping concentration. When irradiations are done at temperatures of -140 deg C, no damage occurs until devices are warmed to temperatures above -50 deg C. After warm-up, subsequent cooling shows that damage is then present at low temperature. This can be explained by the very strong temperature dependence of dispersive transport in the continuous-time-random-walk model for hole transport. For linear integrated circuits, low temperature operation is affected by the strong temperature dependence of npn transistors along with the higher sensitivity of lateral and substrate pnp transistors to radiation damage.

linear integrated circuits↗

Ion chemistry in interstellar space

The temperature dependence of the bimolecular reactions of Cl(+), HCl(+), CH(+), CH2(+), N(+), NH(+), and NH2(+) reacting with H2 have been investigated. For Cl(+) and HCl(+) rate constants have been determined over the temperature range of 150 to 400 K. Preliminary data have been obtained for the other systems. The Cl(+)/H2 system shows a weak, but significant positive temperature dependence that could be important in interstellar modeling studies. The HCl(+)/H2 system shows a substantial negative temperature dependence with the rate constant approaching the collision rate at low temperatures. The association reaction CH3(+) + HCN yields CH3 HCN(+) has been theoretically modeled using statistical phase space theory. Both radiative and collisional stabilization have been included. The results are compared with experiment with good agreement obtained over wide variations in T and p. This system is potentially important in the mechanism of large molecule synthesis in interstellar space.

Bowers, M. T.↗

The Density-Potential (N(sub e)-V(sub s/c)) Relation in the High-Latitude Prenoon Ionosphere

Sounding of the Cleft Ion Fountain Energization Region (SCIFER) Thermal Electron Capped Hemisphere Spectrometer (TECHS) data are used to study the plasma density, spacecraft potential relation (N(sub e)-V(sub s/c)) in the prenoon topside auroral and cleft ionosphere during a period of low solar activity. The SCIFER TECHS data show a power-law electron temperature dependence on ambient density across the transition from positive to negative spacecraft potential values in the high-latitude ionosphere. The illuminated ionospheric N(sub e)-V(sub s/c) relation is numerically modeled by imposing equilibrium of current flowing to/from the conductive surfaces of the payload. This modeling demonstrates a strong dependence of spacecraft potential on electron temperature across a wide range of densities. This electron temperature dependence is especially significant in the negative spacecraft potential regime. SCIFER TECHS observations of the N(sub e)-V(sub s/c) relation are used to extend the previous magnetospheric observation-model results to the higher density ionospheric regime.

Adrian, M. L.↗

Drift mobility of holes in phenanthrene single crystals

The temperature dependence of drift mobilities of holes in single crystals of phenanthrene was measured in the range from 203 to 353 K in three crystallographic directions. Below the anomaly temperature of 72 C, the mobility temperature dependences are consistent with the Munn and Siebrand slow-phonon hopping process in the b direction and the Munn and Siebrand slow-phonon coherent mode in the a and c prime directions. The drift mobility temperature dependences in crystals that have been cooled through the anomaly temperature in the presence of illumination and an electric field are consistent with the model of Spielberg et al. (1971), in which the hindered vibration of the 4,5 hydrogens introduces a new degree of freedom above 72 C.

Sonnonstine, T. J.↗

Volume reflecting heat shields for entry into the giant planet atmospheres

The performance of a volume reflecting or backscattering silica heat shield is examined for an entry probe into the severe radiative environments of Saturn, Uranus, and Jupiter. The governing equations for the material response are solved numerically and include the effects of temperature-dependent thermal properties, temperature- and wavelength-dependent radiative properties, and surface recession caused by thermochemical ablation. The influence of the scattering properties on backface temperature is examined, and results are presented which show the required heat-shield thickness for the entry trajectories selected.

Howe, J. T.↗

Nondestructive evaluation of residual stress in low-carbon steel, introduction

The degree of insensitivity of the temperature dependence method to variations in preferred orientations in A508 low carbon steel specimens was determined. A pulsed phase locked loop was used to measure ultrasonic velocity in these specimens in the temperature range of 50 C below and above room temperature. Results are given in tables and indicate that the temperature dependence of ultrasonic longitudinal velocity in four specimens cut at different angles remains unchanged as a function of orientation within + or -2%. The variation of temperature dependence of ultrasonic shear velocity in the A508 steel as a function of applied stresses was also measured. Results show that values at zero stress are equal regardless of whether the polarization direction is parallel or perpendicular to the direction in which the stress is applied.

Source record↗

Radiation effects in heteroepitaxial InP solar cells

Heteroepitaxial InP solar cells, with GaAs substrates, were irradiated by 0.5 and 3 MeV protons and their performance, temperature dependency, and carrier removal rates determined as a function of fluence. The radiation resistance of the present cells was significantly greater than that of non-heteroepitaxial InP cells at both proton energies. A clear difference in the temperature dependency of V(sub oc), was observed between heteroepitaxial and homoepitaxial InP cells. The analytically predicted dependence of dV(sub oc)/dT on Voc was confirmed by the fluence dependence of these quantities. Carrier removal was observed to increase with decreasing proton energy. The results obtained for performance and temperature dependency were attributed to the high dislocation densities present in the heteroepitaxial cells while the energy dependence of carrier removal was attributed to the energy dependence of proton range.

Weinberg, I.↗

Low-Temperature Rate Coefficients of C2H with CH4 and CD4 from 154 to 359 K

Rate coefficients for the reaction C2H + CH4 yields C2H2 + CH3 and C2H + CD4 yields C2HD + CD3 are measured over the temperature range 154-359 K using transient infrared laser absorption spectroscopy. Ethynyl radicals are produced by pulsed laser photolysis of C2H2 in a variable temperature flow cell, and a tunable color center laser probes the transient removal of C2H (Chi(exp 2) Sigma(+) (0,0,0)) in absorption. The rate coefficients for the reactions of C2H with CH4 and CD4 both show a positive temperature dependence over the range 154-359 K, which can be expressed as k(sub CH4) = (1.2 +/- 0.1) x 10(exp -11) exp((-491 +/- 12)/T) and k(sub CD4) = (8.7 +/- 1.8) x 10(exp -12) exp((-650 +/- 61)/T) cm(exp 3) molecule(exp -1) s(exp -1), respectively. The reaction of C2H + CH4 exhibits a significant kinetic isotope effect at 300 K of k(sub CH4)/k(sub CD4) = 2.5 +/- 0.2. Temperature dependent rate constants for C2H + C2H2 were also remeasured over an increased temperature range from 143 to 359 K and found to show a slight negative temperature dependence, which can be expressed as k(sub C2H2) = 8.6 x 10(exp -16) T(exp 1.8) exp((474 +/- 90)/T) cm(exp 3) molecule(exp -1) s(exp -1).

Opansky, Brian J.↗

Time-temperature-stress dependence of boron fiber deformation

The time-dependent deformation of boron fibers over the temperature range from -190 to 800 C is studied by flexural stress relaxation and flexural internal friction techniques on 203-micron diam specimen fibers commercially produced by chemical vapor deposition (CVD) on a 13-micron tungsten substrate. It is shown that up to at least 800 C all nonelastic behavior observed during axial deformation of CVD boron fibers can be explained solely by anelastic mechanisms and that although creep strains are small, boron fiber anelasticity can produce significant mechanical effects which would otherwise be neglected under the elastic approximation. Relations are obtained to demonstrate the considerable effects of anelasticity on such fiber/composite properties as modulus, creep, creep recovery, stress relaxation, and damping capacity. For an elastic-core/anelastic-sheath model, boron fibers on tungsten substrates are shown to have predictable fracture stresses for time-temperature conditions ranging from impact to long-time stress rupture. Possible techniques for altering these stresses are discussed.

Dicarlo, J. A.↗

Thermophysical Properties of Cold and Vacuum Plasma Sprayed Cu-Cr-X Alloys, NiAl and NiCrAlY Coatings: Specific Heat Capacity - Part 2

Part I of the paper discussed the temperature dependencies of the electrical resistivities, thermal conductivities, thermal diffusivities and total hemispherical emissivities of several vacuum plasma sprayed (VPS) and cold sprayed copper alloy monolithic coatings, VPS NiAl, VPS NiCrAlY, extruded GRCop-84 and as-cast Cu-17(wt.%)Cr-5%Al. Part II discusses the temperature dependencies of the constant pressure specific heat capacities, CP, of these coatings. The data were empirically were regression-fitted with the equation: CP = AT4 + BT3 + CT2 + DT +E where T is the absolute temperature and A, B, C, D and E are regression constants. The temperature dependencies of the molar enthalpy, molar entropy and Gibbs molar free energy determined from experimental values of molar specific heat capacity are reported. Calculated values of CP using the Neumann-Kopp (NK) rule were in poor agreement with experimental data. Instead, a modification of the Neumann-Kopp rule was found to predict values closer to the experimental data with an absolute deviation less than 6.5%. The specific molar heat capacities for all the alloys did not agree with the Dulong-Petit law, and CP is greater than 3R, where R is the universal gas constant, were measured for all the alloys except NiAl for which CP is less than 3R at all temperatures.

Raj, S. V.↗

Vertical Electron Transport through PbS-EuS Structures

Temperature dependence of current-voltage I-V characteristics and resistivity is studied in ferromagnetic PbS-EuS semiconductor tunnel structures grown on n-PbS (100) substrates. For the structures with a single (2-4 nm thick) ferromagnetic EuS electron barrier we observe strongly non-linear I-V characteristics with an effective tunneling barrier height of 0.3-0.7 eV. The experimentally observed non-monotonic temperature dependence of the (normal to the plane of the structure) electrical resistance of these structures is discussed in terms of the electron tunneling mechanism taking into account the temperature dependent shift of the band offsets at the EuS-PbS heterointerface as well as the exchange splitting of the electronic states at the bottom of the conduction band of EuS.

Wrotek, S.↗

A survey of unified constitutive theories

The state of the art of time temperature dependent elastic viscoplastic constitutive theories which are based on the unified approach werre assessed. This class of constitutive theories is characterized by the use of kinetic equations and internal variables with appropriate evolutionary equations for treating all aspects of inelastic deformation including plasticity, creep, and stress relaxation. More than 10 such unified theories which are shown to satisfy the uniqueness and stability criteria imposed by Drucker's postulate and Ponter's inequalities are identified. The theories are compared for the types of flow law, kinetic equation, evolutionary equation of the internal variables, and treatment of temperature dependence. The similarities and differences of these theories are outlined in terms of mathematical formulations and illustrated by comparisons of theoretical calculations with experimental results which include monotonic stress-strain curves, cyclic hysteresis loops, creep and stress relaxation rates, and thermomechanical loops. Numerical methods used for integrating these stiff time temperature dependent constitutive equations are reviewed.

Chan, K. S.↗

The physical and infrared spectral properties of CO2 in astrophysical ice analogs

Results of measurements of the infrared spectroscopic and condensation-vaporization properties of CO2 in pure and mixed ices are presented. Detailed examination of five infrared CO2 bands, 2.20, 2.78, 4.27, 15.2, and 4.39 microns, shows that the peak position, FWHM, and profile of the bands provide important information about the composition, formation, and subsequent thermal history of the ices. Absorption coefficients and their temperature dependence for all five CO2 bands are determined. The temperature dependence variation is found to be less than 15 percent from 10 to 150 K, i.e., the temperature at which H2O ice sublimes. The number of parameters associated with the physical behavior of CO2 in CO2- and H2O-rich ices, including surface binding energies, and condensation and sublimation temperatures, are determined under experimental conditions. The implications of the data obtained for cometary models are considered.

Sandford, S. A.↗

Thermophysical Property Measurements of Silicon-Transition Metal Alloys

Metals and metallic alloys often have high melting temperatures and highly reactive liquids. Processing reactive liquids in containers can result in significant contamination and limited undercooling. This is particularly true for molten silicon and it alloys. Silicon is commonly termed "the universal solvent". The viscosity, surface tension, and density of several silicon‐transition metal alloys were determined using the Electrostatic Levitator system at the Marshall Space Flight Center. The temperature dependence of the viscosity followed an Arrhenius dependence, and the surface tension followed a linear temperature dependence. The density of the melts, including the undercooled region, showed a linear behavior as well. Viscosity and surface tension values were obtain for several of the alloys in the undercooled region.

Banish, R. Michael↗

Cryo-Infrared Optical Characterization at NASA GSFC

The development of large space infrared optical systems, such as the Next Generation Space Telescope (NGST), has increased requirements for measurement accuracy in the optical properties of materials. Many materials used as optical components in infrared optical systems, have strong temperature dependence in their optical properties. Unfortunately, data on the temperature dependence of most of these materials is sparse. In this paper, we provide a description of the capabilities existing in the Optics Branch at the Goddard Space Flight Center that enable the characterization of the refractive index and absorption coefficient changes and other optical properties in infrared materials at cryogenic temperatures. Details of the experimental apparatus, which include continuous flow liquid helium optical cryostat, and a Fourier Transform Infrared (FTIR) spectrometer are discussed.

Boucarut, Ray↗

Recombination of NO/+/ in the mid-latitude trough and the polar ionization hole

The dissociative recombination of NO(+) with electrons is further examined using a sample of Atmosphere Explorer data from the midlatitude ionization trough. The electron temperature for this data sample covered a range of 2500 K, thus allowing an accurate determination of the temperature dependence of the rate coefficient. The results confirm earlier determinations which were made from a large data base, and the rate coefficient alpha is found to be inversely proportional to the electron temperature. The possibility of a neglected process in the NO(+) chemistry is investigated which, if it were included, might result in a smaller temperature dependence of alpha. Such a source would require a direct dependence on electron temperature. A possible candidate is associative recombination of energetic N(D-2) with O. The results confirm recent measurements which find that this process cannot be significant. The NO(+) chemistry is a very sensitive indicator of chemical equilibrium conditions. By using measurements of the relevant parameters made in the polar ionization hole it is found that horizontal drifts do not appear to be significant in this region.

Torr, M. R.↗