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At least 415 records · Page 23
All sourcesNASA NTRSDOE OSTI
NASA NTRS1983

Process research of non-CZ silicon material

High risk, high payoff research areas associated with the Westinghouse process for producing photovoltaic modules using non- CZ sheet material were investigated. All work was performed using dendritic web silicon. The following tasks are discussed and associated technical results are given: (1) determining the technical feasibility of forming front and back junctions in non-CT silicon using dopant techniques; (2) determining the feasibility of forming a liquid applied diffusion mask to replace the more costly chemical vapor deposited SiO2 diffusion mask; (3) determining the feasibility of applying liquid anti-reflective solutions using meniscus coating equipment; (4) studying the production of uniform, high efficiency solar cells using ion implanation junction formation techniques; and (5) quantifying cost improvements associated with process improvements.

Source record↗
NASA NTRS1983

Temperatures of shock-induced shear instabilities and their relationship to fusion curves

New emission spectra for MgO and CaAl2Si2O8 (glass) are observed from 430 to 820 nm. Taken with previous data, it is suggested that transparent solids display three regimes of light emission upon shock compression to successively higher pressures: (1) characteristic radiation such as observed in MgO and previously in other minerals, (2) heterogeneous hot spot (greybody) radiation observed in CaAl2Si2O8 and previously in all transparent solids undergoing shock-induced phase transformations, and (3) blackbody emission observed in the high pressure phase regime in NaCl, SiO2, CaO, CaAl2Si2O8, and Mg2SiO4. The onset of the second regime may delineate the onset of shock-induced polymorphism whereas the onset of the third regime delineates the Hugoniot pressure required to achieve local thermal equilibrium in the shocked solid. It is also proposed that the hot spot temperatures and corresponding shock pressures determined in the second regime delineate points on the fusion curves of the high pressure phase.

Schmitt, D. R.↗
NASA NTRS1984

Silicon nitride films deposited with an electron beam created plasma

The electron beam assisted chemical vapor deposition (EBCVD) of silicon nitride films using NH3, N2, and SiH4 as the reactant gases is reported. The films have been deposited on aluminum, SiO2, and polysilicon film substrates as well as on crystalline silicon substrates. The range of experimental conditions under which silicon nitrides have been deposited includes substrate temperatures from 50 to 400 C, electron beam currents of 2-40 mA, electron beam energies of 1-5 keV, total ambient pressures of 0.1-0.4 Torr, and NH3/SiH4 mass flow ratios of 1-80. The physical, electrical, and chemical properties of the EBCVD films are discussed.

Bishop, D. C.↗
NASA NTRS1984

Two forsterite-bearing FUN inclusions in the Allende meteorite

Two forsterite-, fassaite-, spinel-rich inclusions in Allende which share common mineralogy and texture with three previously described inclusions are described. These inclusions were at least partially molten at temperatures over 1400 C, and their crystallization sequence was spinel, olivine, fassaite, and Mg-rich melilite. At least some of them experienced partial volatilization of MgO and SiO2 from their outer margins. At least one of the inclusions is highly enriched in MgO relative to CaO and Al2O3 compared to Allende coarse-grained inclusions, although it is just as strongly enriched in refractory trace elements as the latter, relative to C1 chondrites. Two of the objects are FUN inclusions on the basis of their oxygen, magnesium, and silicon isotopic compositions.

Clayton, R. N.↗
NASA NTRS1984

Chemical and physical studies of type 3 chondrites. III Chondrules from the Dhajala H3.8 chondrite

Thermoluminescence (TL) properties have been measured in 58 chondrules separated from the Dhajala H3.8 chondrite. The pyrolytic chondrules are noted to have higher mass-normalized TL values than nonpyrolytic ones. Significant correlations are noted between log(TL) and the bulk CaO, Al2O3, and MnO content of the chondrules. These, together with correlations of log(TL) with the CaO, Al2O3, SiO2 and normative anorthite content of the chondrule glass, indicate an association of the TL and the abundance and position of mesostasis. It is suggested that the TL level in a given chondrule is governed by its bulk composition and metamorphism, and it is hypothesized that the devitrification resistance of unequilibrated chondrule mesostasis explains the unequilibration of certain chondrules in type 3 ordinary chondrites.

Sears, D. W. G.↗
NASA NTRS1983

Description of the containerless melting of glass in low gravity

A brief description is given of a single-axis, acoustic levitator/furnace apparatus used to position, heat, melt, and quench multicomponent oxide, glass-forming compositions in low gravity. This apparatus is capable of processing eight approximately spherical samples (about 6 mm diameter) at temperatures up to 1550 C in a dry air atmosphere. Results are also presented for a containerless melting experiment conducted on SPAR VI where a ternary CaO-Ga2O3-SiO2 composition was levitated and quenched to a glass. Selected properties of the glass prepared on SPAR VI are compared with the properties of glass samples of identical composition prepared on earth.

Ray, C. S.↗
NASA NTRS1984

Major element chemical compositions of chondrules in unequilibrated chondrites

The chemical compositions (except for metals and sulfides in chondrules) of more than 500 chondrules from unequilibrated E, H, L, LL, and C chondrites were measured using a broad beam of an electron-probe microanalyzer. The compositions of chondrules can be represented by various mixtures of normative compositions of olivine, low-Ca pyroxene, plagioclase, and high-Ca pyroxene with minor amounts of spinel, feldspathoid, SiO2-minerals, etc., indicating that the chondrule precursor materials consisted of aggregates of these minerals. The Al, Na, and K contents of most chondrules reflect the compositions of the ternary feldspar (An-Ab-Kf) of the chondrule precursor materials, and chemical types of chondrules (KF, SP, IP, and CP) are defined on the basis of the atomic proportion of Al, Na, and K.

Ikeda, Y.↗
NASA NTRS1985

Bondability of Al-Si thin film in thermosonic gold wire bonding

The bondability of two kinds of Al-Si thin films in thermosonic Au wire bonding was examined by means of microshear tests. One type of film was formed by sputtering an Al-2% Si alloy, and the other was formed by depositing an 0.05 micrometer-thick polysilicon layer on SiO2 by chemical vapor deposition (CVD) and then depositing a 1.2 micrometer-thick Al layer on them by evaporation. After heat-treatment at 450 deg for 30 min., Si in the Al-Si film crystallized. The grain size of the crystallized Si affects the thermosonic wire bondability, i.e., for Al-2% Si sputtered films, good bondability was obtained under relatively small (1.0 micrometer) grain size conditions. In the successive layer process, on the other hand, the grain size of crystallized Si varies with the polysilicon CVD temperature. The optimum CVD temp. was determined from the standpoint of bondability with respect to grain size.

Nakagawa, K.↗
NASA NTRS1984

Material growth and characterization for solid state devices

Manganese was used as the dopant for p-type InGaAs layers grown on semi-insulating (Fe-doped) and n-type (Sn-doped) InP substrates. Optical, electrical (Hall) and SIMS measurements were used to characterize the layers. Mn-diffusion into the substrate (during the growth of In GaAs) was observed only when Fe-doped substrates were used. Quaternary layers of two compositions corresponding to wavelengths (energy gaps) of approximated 1.52 micrometers were successfully grown at a constant temperature of 640 C and InP was grown in the temperature range of 640 C to 655 C. A study of the effect of pulses on the growth velocity of InP indicated no significant change as long as the average applied current was kept constant. A system for depositing films of Al2O3 by the pyrolysis of aluminum isopropoxide was designed and built. Deposited layers on Si were characterized with an ellipsometer and exhibited indices of refraction between 1.582 and 1.622 for films on the order of 3000 A thick. Undoped and p-type (Mn-doped) InGaAs epitaxial layers were also grown on Fe-doped InP substrates through windows in sputtered SiO2 (3200 A thick) layers.

Stefanakos, E. K.↗
NASA NTRS1985

Mechanical protection of DLC films on fused silica slides

Measurements were made with a new test for improved quantitative estimation of the mechanical protection of thin films on optical materials. The mechanical damage was induced by a sand blasting system using spherical glass beads. Development of the surface damage was measured by the changes in the specular transmission and reflection, and by inspection using a surface profilometer and a scanning electron microscope. The changes in the transmittance versus the duration of sand blasting was measured for uncoated fused silica slides and coated ones. It was determined that the diamond like carbon films double the useful optical lifetime of the fused silica. Theoretical expressions were developed to describe the stages in surface deterioration. Conclusions were obtained for the SiO2 surface mechanism and for the film removal mechanism.

Nir, D.↗
NASA NTRS1985

Processing technology for high efficiency silicon solar cells

Recent advances in silicon solar cell processing have led to attainment of conversion efficiency approaching 20%. The basic cell design is investigated and features of greatest importance to achievement of 20% efficiency are indicated. Experiments to separately optimize high efficiency design features in test structures are discussed. The integration of these features in a high efficiency cell is examined. Ion implantation has been used to achieve optimal concentrations of emitter dopant and junction depth. The optimization reflects the trade-off between high sheet conductivity, necessary for high fill factor, and heavy doping effects, which must be minimized for high open circuit voltage. A second important aspect of the design experiments is the development of a passivation process to minimize front surface recombination velocity. The manner in which a thin SiO2 layer may be used for this purpose is indicated without increasing reflection losses, if the antireflection coating is properly designed. Details are presented of processing intended to reduce recombination at the contact/Si interface. Data on cell performance (including CZ and ribbon) and analysis of loss mechanisms are also presented.

Spitzer, M. B.↗
NASA NTRS1984

Reaction of amorphous Ni-W and Ni-N-W films with substrate silicon

Wiley et al. (1982) have studied sputtered amorphous films of Nb-Ni, Mo-Ni, Si-W, and Si-Mo. Kung et al. (1984) have found that amorphous Ni-Mo films as diffusion barriers between multilayer metallizations on silicon demonstrate good electrical and thermal stability. In the present investigation, the Ni-W system was selected because it is similar to the Ni-Mo system. However, W has a higher silicide formation temperature than Mo. Attention is given to aspects of sample preparation, sample characterization, the interaction between amorphous Ni-W films and Si, the crystallization of amorphous Ni(36)W(64) films on SiO2, amorphous Ni-N-W films, silicide formation and phase separation, and the crystallization of amorphous Ni(36)W(64) and Ni(30)N(21)W(49) layers.

Zhu, M. F.↗
NASA NTRS1984

Emitter formation in dendritic web silicon solar cells

The use of liquid dopants and liquid masks for p-n junction formation in dendritic web solar cells was investigated and found to be equivalent to the use of gaseous dopants and CVD SiO2 masks previously used. This results in a projected cost reduction of 0.02 1980$/Watt for a 25 MW/year production line, and makes possible junction formation processes having a higher throughput than more conventional processes. The effect of a low-energy (0.4 keV) hydrogen ion implant on dendritic web solar cells was also investigated. Such an implant was observed to improve Voc and Jsc substantially. Measurements of internal quantum efficiency suggest that it is the base of the cell, rather than the emitter, which benefits from the hydrogen implant. The diffusion length for electrons in the p-type base increased from 53 microns to 150 microns in one case, with dendritic web cell efficiency being boosted to 15.2 percent. The mechanism by which low-energy hydrogen ions can penetrate deeply into the silicon to effect the observed improvement is not known at this time.

Meier, D. L.↗
NASA NTRS1985

The feasibility of silicon on garnet technology

The feasibility of combining silicon and magnetic bubble technologies is demonstrated. Functional MOSFETs have been fabricated on top of bubble films coated with 1-micron thick SiO2 layers. The large grain silicon necessary for these devices is obtained by laser recrystallization of polycrystalline silicon (polysilicon). The laser-recrystallization process causes changes in the magnetic properties of the bubble film; however, these changes can be reversed by subsequent thermal anneals. The required temperature treatments after laser annealing are compatible with the MOSFET fabrication process.

Rasky, P. H. L.↗
NASA NTRS1985

Microstructure of reaction-bonded silicon nitride consolidated by isostatic hot-pressing

A microstructural examination and chemical analysis are conducted for reaction-bonded Si3N4 specimens that were isostatically hot pressed at 1850, 1950, and 2050 C. The present observations indicate that the previously reported increase in the 1200 C bend strength of reaction-bonded Si3N4, after pressing at 2050 C exclusively, is due to the relative oxygen levels of the isostatically hot pressed specimens; calculations show that an SiO2 content of less than about 2.2 vol pct is needed to yield the 1200 C strength increase.

Mieskowski, D. M.↗
NASA NTRS1985

Shock induced radiation from minerals

Schmitt and Ahrens (1983) have concluded that the type of optical emission produced during shock compression was dependent upon phase changes taking place during shock compression. The present study is concerned with new observations of shock-induced optical radiation from Al2O3, MgO, NaCl, KCl, x-cut and fused SiO2, and LiF at various pressures up to 75 GPa. The experimental setup used in the study is similar to that employed by Schmitt and Ahrens. An Image Converter Camera with a three-frame plug-in unit was added to take two or three exposures of the radiation field during shock wave propagation through the sample, taking into account exposure times in the range from 50 to 500 nsec. The greybody emissions observed in LiF, which undergoes no phase transition, imply that localized heating and perhaps melting occurs in this material during shock deformation.

Schmitt, D.↗
NASA NTRS1985

Thermal history of shock-compressed solids

An isotropic, heterogeneous, viscous thermoplastic model of the uniaxially shock-compressed state in transparent solids is examined with a view to determining the conditions under which this radiation may be nominally thermal or nonthermal. Regions of locally high temperatures producing thermal radiation may develop only where the local viscosity is low and the Maxwell time is short; alternatively, regions of low elastic moduli and long Maxwell time could experience sustained elastic deformation, leading to microfracture and triboluminescence. Attention is given to the cases of MgO and SiO2.

Svendsen, B.↗
NASA NTRS1986

GaAs Semi-Insulating Layer for a GaAs Device

Improved design for GaAs electronic device or integrated circuit designed to operate at cryogenic temperatures, customary SiO2 insulating layer replaced by semi-insulating layer of GaAs. Thermal expansions of device and covering layer therefore match closely, and thermal stresses caused by immersion in cryogenic chamber nearly eliminated.

Sherrill, G.↗