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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Proposed semiconductor laser modulated at frequencies up to near its resonant frequency more efficiently than older devices. New laser uses two different effective carrier lifetimes: one for dc and lowfrequency operation and another for operation near resonant frequency. Laser part of bipolar transistor with capacitor that serves as ac short circuit.
Concept for improving efficiency of photovoltaic solar cells based on decreasing p/n junction area in relation to total surface area of cell. Because of reduced junction area, surface leakage drops and saturation current density decreases. Surface passivation helps to ensure short-circuit current remains at high value and response of cells to blue light increases.
Separation of biological cells by coil-planet centrifuge enhanced by electrophoresis. By itself, coil-planet centrifuge offers relatively gentle method of separating cells under low centrifugal force in physiological medium that keeps cells alive. With addition of voltage gradient to separation column of centrifuge, separation still gentle but faster and more complete. Since separation apparatus contains no rotary seal, probability of leakage, contamination, corrosion, and short circuits reduced.
Distress beacons on aircraft and boats checked for proper operation with aid of onboard monitor. Monitor mounted in aircraft cockpit or at wheel of boat. Connected to beacon electronics by cable. Monitor used with interface circuitry in beacon, which acts as buffer so that operation of beacon is not adversely affected if monitor is removed or if connecting cable is accidentally short circuited.
Four-cylinder, Stirling-engine, transient-engine-simulation computer program developed. Program intended for control analysis. Associated engine model simplified to shorten computer calculation time. Model includes engine mechanical-drive dynamics and vehicle-load effects. Computer program also includes subroutines that allow acceleration of engine by addition of hydrogen to system and braking of engine by short circuiting of working spaces.
A numerical modeling technique is utilized to investigate the response of a UH-60A helicopter to both lightning and nuclear electromagnetic pulses (NEMP). The analytical approach involves the three-dimensional time domain finite-difference solutions of Maxwell's equations. Both the external currents and charges as well as the internal electromagnetic fields and cable responses are computed. Results of the analysis indicate that, in general, the short circuit current on internal cables is larger for lightning, whereas the open-circuit voltages are slightly higher for NEMP. The lightning response is highly dependent upon the rise time of the injected current as was expected. The analysis shows that a coupling levels to cables in a helicopter are 20 to 30 dB larger than those observed in fixed-wing aircraft.
Results of hydrogen-passivated polycrysalline silicon solar cell research are summarized. The short-circuit current of solar cells fabricated from large-grain cast polycrystalline silicon is nearly equivalent to that of single-crystal cells, which indicates long bulk minority-carrier diffusion length. Treatments with molecular hydrogen showed no effect on large-grain cast polycrystalline silicon solar cells.
Large power systems proposed for future space missions imply higher operating voltage requirements which, in turn, will interact with the space plasma environment. The effects of these interactions can only be inferred because of the limited data base of ground simulations, small test samples, and two space flight experiments. This report evaluates floating potentials for a 100 kW power system operating at 300, 500, 750, and 1000 volts in relation to this data base. Of primary concern is the possibility of discharging to space. The implications of such discharges were studied at the 500 volt operational setting. It was found that discharging can shut down the power system if the discharge current exceeds the array short circuit current. Otherwise, a power oscillation can result that ranges from 2 to 20 percent, depending upon the solar array area involved in the discharge. Means of reducing the effect are discussed.
A previously derived theory is applied to a microstrip antenna with a reactive load to produce a dual-band radiator. A model consisting of a rectangular patch radiator loaded with a variable length short-circuited coaxial stub was investigated experimentally. Comparisons of theoretical predictions and experimental data are made for the impedance and resonant frequencies as a function of the position of the load, the length of the stub, and the characteristic impedance of the stub.
n-type bulk GaAs crystals, capped with chemically vapor-deposited phosphosilicate glass, were heat treated at temperatures in the range of 600 to 950 C. Measurements on Schottky diodes and solar cells fabricated on the heat-treated material, after removal of a damaged surface layer, show an increase in free-carrier concentration, in minority-carrier-diffusion length, and in solar-cell short-circuit current. The observed changes are attributed to a removal of lifetime-reducing acceptorlike impurities, defects, or their complexes.
Several types of silicon and gallium arsenide solar cells were irradiated with protons with energies between 50 keV and 10 MeV at both normal and isotropic incidence. Damage coefficients for maximum power relative to 10 MeV were derived for these cells for both cases of omni-directional and normal incidence. The damage coefficients for the silicon cells were found to be somewhat lower than those quoted in the Solar Cell Radiation Handbook. These values were used to compute omni-directional damage coefficients suitable for solar cells protected by coverglasses of practical thickness, which in turn were used to compute solar cell degradation in two proton-dominated orbits. In spite of the difference in the low energy proton damage coefficients, the difference between the handbook prediction and the prediction using the newly derived values was negligible. Damage coefficients for GaAs solar cells for short circuit current, open circuit voltage, and maximum power were also computed relative to 10 MeV protons. They were used to predict cell degradation in the same two orbits and in a 5600 nmi orbit. Results show the performance of the GaAs solar cells in these orbits to be superior to that of the Si cells.
The technique of backside-damage gettering improves the performance of short minority-carrier diffusion length, large-grain (grain diameter greater than 1 to 2 mm), cast polycrystalline silicon. On average, increases of nearly 20 percent in short-circuit current, 10 mV in open-circuit voltage, and 15 percent in peak-power were obtained by heat-treating 300 micron thick polycrystalline wafers at 1000 C in flowing nitrogen for 5 hours. Additional measurements of the bulk and space-charge recombination current components indicate that this improvement results from a significant increase in the minority-carrier diffusion length due to gettering of impurities from the bulk.
Bypass diodes are often required to limit the potential for reverse voltage 'hot-spot' heating in high voltage arrays or in arrays that undergo periodic operation near the short-circuit point. In addition, when properly applied, bypass diodes can minimize the effect of shadowing and various internal module failures on the array energy output. This paper discusses the mechanical and electrical integration of bypass diodes beginning with the array-level considerations which influence the selection of an implementation approach. Concepts for the mounting of these diodes, both internally within the module encapsulant and externally to the exposed rear surface of the module, are described. Factors affecting the reliability of bypass diodes, including the control of junction temperature through adequate heat sinking and the derating of reverse voltage, are discussed.
Electrochemical corrosion of PV cells can cause a cell-to-frame short circuit with two undesirable resuits: (1) catastrophic loss of source-circuit power; and (2) high field maintenance (module replacement) costs. Parameter dependencies are determined and encapsulated two-cell coupons are exposed to a range of voltage differences, temperatures, and relative humidities. Material relative performance is assessed. Nine different metallization-encapsulation combinations are tested.
A simplified model for the short-circuit current reduction caused by proton-induced radiation damage is described. The model accounts for the nonuniformity of defect production within heteroface GaAs shallow junction solar cells. The results from the model show agreement with the strong energy dependence observed in proton radiation damage experiments.
Because of field experience (indicating that cell and module degradation could occur as a result of hot spot heating), a laboratory test was developed at JPL to determine hot spot susceptibility of modules. The initial hot spot testing work at JPL formed a foundation for the test development. Test parameters are selected as follows. For high shunt resistance cells, the applied back bias test current is set equal to the test cell current at maximum power. For low shunt resistance cells, the test current is set equal to the cell short circuit current. The shadow level is selected to conform to that which would lead to maximum back bias voltage under the appropriate test current level. The test voltage is determined by the bypass diode frequency. The test conditions are meant to simulate the thermal boundary conditions for 100 mW/sq cm, 40C ambient environment. The test lasts 100 hours. A key assumption made during the development of the test is that no current imbalance results from the connecting of multiparallel cell strings. Therefore, the test as originally developed was applicable for single string case only.
AlGaAs-GaAs heteroface space concentrator solar cells have been fabricated by metalorganic chemical vapor deposition. AMO efficiencies as high as 21.1% have been observed both for p-n and np structures under concentration (90 to 100X) at 25 C. Both cell structures are characterized by high quantum efficiencies and their performances are close to those predicted by a realistic computer model. In agreement with the computer model, the n-p cell exhibits a higher short-circuit current density.
Possible applications of superlattices to photovoltaic structures are discussed. A new concept based on doping superstructures (NIPI) can be exploited to significantly reduce recombination losses in III-V compound solar cells. A novel multijunction structure with lateral current transport is proposed. A computer simulation has been performed which shows that by optimizing the multilayer structure, short circuit current is substantially increased with minimum drop in open circuit voltage. An additional advantage of the structure is enhanced radiation tolerance. It is anticipated that this multilayer structure can be incorporated in multibandgap cells to achieve high efficiencies.