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At least 415 records · Page 23

Cryogenically enhanced quasi-optical resonator for megawatt pulsed millimeter-wave sources

We report the design, cryogenic optimization, and performance modeling of a compact quasi-optical ring resonator intended to compress microwaves pulses at 170 and 250 GHz to the megawatt level. By combining ultra-low-loss CVD diamond and gold-doped silicon wafers with high-RRR copper mirrors, the calculated unloaded quality factor exceeds 4.3 × 10 5 at 20 K and yields simulated gains up to $\mathscr{G}$ = 4.1 × 10 3 . Coupling the resonator with a laser-driven semiconductor switch described by an extended Vogel model shows that 1 MW, nanosecond pulses can be generated from only 445 W of microwave drive power while dissipating 272 W into the cryostat. A practical cooling architecture using two Gifford–McMahon stages (20 and 80 K) is proposed, demonstrating that high-repetition-rate (10–20 kHz) operation is feasible with commercially available cryocoolers. The results outline a clear path toward cost-effective, table-top sources for extreme-ultraviolet lithography, dynamic nuclear polarization, and fusion systems.

Panisset, Constant [Ecole Polytechnique Federale L↗

Chip-scale frequency combs for data communications in computing systems

Recent developments in chip-based frequency-comb technology demonstrate that comb devices can be implemented in applications where photonic integration and power efficiency are required. The large number of equally spaced comb lines that are generated make combs ideal for use in communication systems, where each line can serve as an optical carrier to allow for massively parallel wavelength-division multiplexing (WDM) transmission. In this review, we summarize the developments in integrated frequency-comb technology for use as a WDM source for communication systems in data centers and high-performance computing systems. We highlight the following three approaches for chip-scale comb generation: semiconductor modelocked lasers, electro-optic combs, and Kerr frequency combs.

Okawachi, Yoshitomo (ORCID:0000000196390549)↗

Infrared heterodyne spectroscopy of astronomical and laboratory sources at 8.5 microns

It is pointed out that the first successful infrared heterodyne spectrometer featuring semituneable semiconductor diode lasers was constructed and used near 8.5 micrometers to make laboratory measurements of line profiles in nitrous oxide and to detect thermal emission from Mars and from the moon. Questions of instrument design are discussed along with the significance of the results obtained in the investigation.

Mumma, M.↗

Measuring Excess Noise in SDL's

New instrument gives quantitive information on "excess noise" in semiconductor-diode laser (SDL's). By proper selection of detector, instrument tests any SDL from visible wavelengths through thermal infrared. Lasers determine excess noise in SKL source by measuring photocurrent generated in photodetector exposed first to reference laser then to SKL under test.

Katzberg, S. J.↗

Inertial references based on single mode optical fiber waveguides

Recent developments in low loss single mode optical fiber waveguides, semiconductor waveguide lasers and waveguide optical and electro-optical components have made a new class of rotational inertial frame references possible. The subclasses of possible fiber waveguide gyro configurations are discussed and one approach which is under development is reviewed. Signal detection and processing, error sources, expected physical and performance characteristics, and present development status are discussed.

Goss, W. C.↗

High-Temperature, High-Pressure Optical Cells

Optical cell constructed for measurement of thermal diffusivity of HgCdTe semiconductor by laser pulses. Container allows radiation from laser to enter one side of alloy sample, while allowing lower-energy infrared radiation to leave opposite side of sample so temperature rise read by sensor. Composed entirely of fused silica, cell includes two optical windows joined by tube. Cell withstands 1,000 degrees C cell-operating temperature and contains molten alloy at its 100-atmosphere vapor pressure. Finally, allows alloy to solidify without bursting even though alloy expands on cooling.

Harris, R. P.↗

Passivation of MBE grown InGaSb/InAs superlattice photodiodes

We have performed wet chemical passivation tests on InGaSb/InAs superlattice photodiode structures grown molecular beam epitaxy. The details of the devices growth and characterization as well as the results of chemical passivation involving RuCl3 and H2SO4 with SiO2 dielectric depositions are presented.

molecular beam↗

Direct Laser Writing Crystal Polymorphs of Organic Semiconductors for Phase Change Electronics

The many diverse polymorphic behaviors observed in organic electronic materials offer opportunities to modulate electronic properties through reversibly switching crystal structures. Here, we access the prolific polymorphism observed in two-dimensional quinoidal terthiophene via laser writing to locally heat and direct the phase transitions. We access a metastable polymorph IV through rapid cooling and observe distinct symmetry as well as packing through grazing incidence X-ray diffraction (GIXD). Using our open-source PolyChemPrint patterning platform, we direct laser heating to initiate the IV-I transition, switching the conductance by >2 orders of magnitude. Here, this is confirmed via a combination of GIXD and Raman spectroscopy. Finally, we demonstrate switching of transistor devices as well as discrete tuning of conductance via laser writing.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗