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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 415 records · Page 23
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Finite Element Analysis and Techno-economic Modeling of Solar Silicon Molten Salt Electrolysis

A new process is presented for low-cost one-step production of pure solid silicon from natural quartzite by molten salt electrolysis. At a process temperature of 1100°C, a techno-economic model including detailed mass and energy balances estimates energy consumption below 15 kWh/kg, with operating cost of $\$1.74$/kg and capital cost around $\$10,500$ per t/a (tonne annually) of production capacity for a 160,000 t/a plant. Use of an inert solid oxide membrane anode results in a pure oxygen by-product and no direct emissions. As a result, finite element analysis estimates the current density distribution and total current to inform the design of slab-shaped solid silicon cathodes.

14 SOLAR ENERGY↗
DOE OSTI2020

Binder jetting additive manufacturing of silicon carbide ceramics: Development of bimodal powder feedstocks by modeling and experimental methods

A limitation of binder jetting additive manufacturing is the low density of fabricated parts. Mixing powders with different sizes is a promising approach to increase powder bed packing density and, hence, printed part density. However, in previous studies mixed powder feedstock was prepared by trial and error method. In this research, both modeling and experimental methods were used to prepare the bimodal powder feedstocks. Analytical packing model was introduced for irregular powders. A bimodal powder was prepared by mixing two different-sized silicon carbide powders (i.e. coarse and fine) using ball mill, and their tap densities were measured. Silicon carbide plates were printed using the coarse and bimodal powders by a commercial binder jetting system. Results showed that the modeling method could predict the tap density of bimodal powders with high accuracy. The printed parts from bimodal powder achieved higher green densities than those from the unimodal powder.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Current activated reactive ultrafast joining (CARUJ) of silicon carbide

In this work we propose and demonstrate a novel approach for rapid fabrication of ceramic-ceramic joint assemblies, using sintered Silicon Carbide (SiC) as an initial example. Current Activated Reactive Ultrafast Joining (CARUJ) utilizes resistive heating of carbon-based materials to apply localized heat at or around the joint zone at heating rates of 101– 103 °C/min. CARUJ is used to fabricate SiC-SiC joints with a Si-SiC interface using minimal pressure (1–2 MPa) at time scales considerably shorter (several minutes opposed to hours) than conventional approaches for similar systems. The reaction of an interfacial precursor based on elemental silicon and carbon leads to in-situ SiC formation to produce a continuous and dense bond in a single step. Measured average joint strengths of roughly 15 MPa are achieved when tested in single lap offset (SLO) compressive shear. Optional additions of refractory metals such as molybdenum can be utilized to introduce secondary inclusions such as MoSi 2 within the joint interface. We further demonstrate SiC-SiC joining using Active Brazing Alloys (ABA) and proof of concept joining of tubular geometries. The localized and rapid heat application realizes a versatile material joining technique that could be extended for joining components at the plant site.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Silicon carbide fiber manufacturing: Cost and technology

Significant advances have been made in the past decade concerning silicon carbide fiber manufacturing methods resulting in near-stoichiometric small-diameter fibers that meet the property requirements for most of the ceramic matrix composites (CMC) and nuclear applications. The manufacturing cost, however, remained prohibitively high, preventing the use of it in different applications requiring much lower cost. Silicon carbide (SiC) fiber reinforced CMC is dominated by the cost of SiC fiber which comprises more than 50 % of the finished part cost. Here, this article provides insight into the SiC fiber manufacturing costs and highlights the need for an alternative SiC fiber precursor and manufacturing method. Analysis of the existing polycarbosilane (PCS)-based SiC fiber manufacturing shows that the crosslinking (curing) and raw material preparation steps are high-cost steps that need lower cost options. Alternative SiC fiber precursor should be sought for lowering the cost of SiC fibers.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Personal and environmental predictors of polycyclic aromatic hydrocarbon exposure identified through repeated silicone wristband sampling

This study integrates quantitative data on personal exposure to polycyclic aromatic hydrocarbons (PAHs) in 162 silicone wristbands with demographics, behavioral information, and housing characteristics to explore contributions to residential exposure in a superfund-adjacent community over the course of a year. Forty-six residents completed questionnaires and wore silicone wristbands as personal passive samplers for seven consecutive days on up to four separate occasions in alternating months between November 2022 and June 2023. It was hypothesized that individual behaviors and housing characteristics are sources of dependence and correlation between personal PAH exposures. 50 PAHs were detected at least once, 17 of which were alkylated PAHs. Exposure to PAHs of similar molecular weight was often correlated, notably between naphthalenes (2-rings) and higher molecular weight PAHs (3 or more rings). Generalized linear mixed models identified flooring type, participant age, and sampling month as important predictors of increased PAH exposure, and flooring type, and use of wood stoves or heavy machinery as predictors of increased naphthalene exposure relative to higher molecular weight PAHs. Individual chemical models based on concentration data and detection frequencies corroborated these findings across multiple PAHs. We demonstrate that personal exposure is not static and the degree of variability in personal exposure is individual. Hence, identification of influential exposure factors through repeated measures of chemical exposure and characterization of variability in personal exposure as performed in this study, is important in the development of exposure mitigation strategies.

Bonner, Emily↗
DOE OSTI2022

Pulling thin single crystal silicon wafers from a melt: The new leading-edge solar substrate

The Floating Silicon Method (FSM) has been established as a viable, stable method for growing single crystal ribbons directly from a silicon melt. With intense helium jet cooling to drive the linear progress of a [111] facet, pulled in the <110> direction, ribbons in the 0.6 – 3.0 mm thickness range can be grown at linear growth rates from 0.3 mm/s to >6 mm/s as reported in the literature. We report on recent progress towards growing (100) oriented ribbons with a net thickness of less than 200 microns and a ribbon width up to 18 cm using a stable, continuous process in the Leading Edge prototype furnace. Here, the 3D details of the single crystal growth are explained by extending the mechanics of the Limit Cycle Theory, with novel Internal Side Effect morphology described by a proposed Facet Flow Theory. Grown-in crystalline defect distributions are described as well as values of critical impurities like oxygen, carbon, dopants, and metals that are relevant for use as wafers for solar cells.

14 SOLAR ENERGY↗
DOE OSTI2025

Resin chemistry and particle size influence on stereolithography with silicon carbide

Stereolithography (SLA) is an established process able to produce high resolution polymer parts with complex geometries. Silicon carbide (SiC) has uses in a variety of applications, but traditionally was difficult to manufacture into complex geometries. There have been advances in producing SiC through SLA using a SiC-derived ceramic such as silicon oxycarbide (SiOC). In this study, a slurry using a commercially available resin as the base material with additional modifiers was investigated to create a SiC slurry ready for pressureless sintering. The effects of photoinitiator, dispersant and a bimodal distribution of SiC particle sizes was studied using a design of experiments (DOE). A slurry with a bimodal distribution of 70 % coarse and 30 % fine SiC powder at 40 % solids loading by volume was prepared and successfully printed. Rheology measurements show the slurry to have viscoelastic shear thinning behavior below the recommended 1000 Pas necessary for printing. Printing parameters for the new material on a commercially available SLA printer were studied parametrically. The laser marking speeds found to print the slurry was 260 mm/s and 130 mm/s. A slurry and printing parameters were determined to produce a green part with a proposed debinding cycle.

Herd, Tien [ORNL]↗
DOE OSTI2023

BlueSTEAl: A pair of silicon arrays and a zero-degree phoswich detector for studies of scattering and reactions in inverse kinematics

BlueSTEAl, the Blue (aluminum chamber of) Silicon TElescope Arrays for light nuclei, has been developed to study direct reactions in inverse kinematics, as well as scattering and breakup reactions using radioactive ion beams. It is a detector system consisting of a pair of annular silicon detector arrays and a zero-degree phoswich plastic scintillator. For typical binary reaction studies in inverse kinematics, light ions are detected by the Si array in coincidence with heavy recoils detected by the phoswich placed at the focal-plane of a zero-degree magnetic spectrometer. The Si array can also be used to detect light nuclei such as beryllium and carbon with clear isotope separation, while the phoswich can also be placed at zero degrees without a spectrometer and used as a high-efficiency beam counting monitor with particle identification capability at the rate of up to ~5 × 10 4 particles per second. This paper reports on the capabilities of BlueSTEAl as determined by recent experiments performed at the Texas A&M Cyclotron Institute. Furthermore, the device is also anticipated to be used in future experiments at other radioactive ion beam facilities.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2020

Origin of the Tunable Carrier Selectivity of Atomic-Layer-Deposited TiOx Nanolayers in Crystalline Silicon Colar Cells

Titanium oxide (TiOx) nanolayers grown by atomic layer deposition are investigated with respect to their application as carrier selective contacts for crystalline silicon (c-Si) solar cells. Although TiOx is known to act as an electron contact, in this work the selectivity of TiOx layers is found to be widely tunable from electron to hole selective depending on deposition conditions, post-deposition treatments, and work function of the metal electrode used. Using TiOx and an intrinsic hydrogenated amorphous silicon buffer layer, solar cell test structure exhibiting open-circuit voltages (Voc) as high as 720 and 650 mV are shown for electron and hole selective contacts, respectively. Surface photovoltage and capacitance-voltage measurements reveal that carrier selectivity is correlated with the amount of c-Si band bending induced by TiOx, which are governed not only by the effective work function difference at the Si/TiOx interface, but also by the negative fixed charge present in the TiOx layer. This new finding is in contrast to the previous model for carrier transport where selectivity is determined only by the asymmetric band offsets at the Si/contact interface. It highlights the influence of induced band bending to produce carrier depletion/inversion conditions, and the importance of its selectivity effect in a c-Si absorber.

14 SOLAR ENERGY↗
DOE OSTI2020

Sub-micrometer random-pyramid texturing of silicon solar wafers with excellent surface passivation and low reflectance

Select emerging solar cell technologies, ranging from very narrow screen-printed fingers to perovskite/silicon tandems, would benefit from a reduction of the height of the standard pyramidal texture of monocrystalline silicon wafers to below 1 μm. However, fabricating such small surface features usually compromises the requisite low reflectance and high passivation quality. Through systematic design of experiments, we demonstrate that conventional alkaline-based wet-chemical etching processes can be tuned to produce dense, spatially homogeneous, and uniformly sized sub-micrometer pyramids. Precise texture size can be further controlled by adding potassium silicate to the texturing solution to effectively slow the pyramid growth rate and promote nucleation. With pyramid size distribution data—extracted from multiple atomic force microscopy images across each wafer—we demonstrate 16 nanotextures with average pyramid sizes ranging from 62 to 512 nm, with the largest having only 0.3% of its pyramids taller than 1 μm. Six of the nanotextures exhibit light trapping and surface defect densities comparable to state-of-the-art microtextured wafers. In conclusion, the best nanotexture achieved an AM1.5G-weighted reflectance of 11.8% and a minority-carrier lifetime of 3.4 ms after passivation with amorphous silicon, demonstrating that smaller textures need not deteriorate solar cell performance.

14 SOLAR ENERGY↗
DOE OSTI2025

Spectral line identification from a photoionised silicon plasma in emission

Next-generation X-ray satellite telescopes such as XRISM, NewAthena and Lynx will enable observations of exotic astrophysical sources at unprecedented spectral and spatial resolution. Proper interpretation of these data demands that the accuracy of the models is at least within the uncertainty of the observations. One set of quantities that might not currently meet this requirement is transition energies of various astrophysically relevant ions. Current databases are populated with many untested theoretical calculations. Accurate laboratory benchmarks are required to better understand the coming data. We obtained laboratory spectra of X-ray lines from a silicon plasma at an average spectral resolving power of ∼7500 with a spherically bent crystal spectrometer on the Z facility at Sandia National Laboratories. Many of the lines in the data are measured here for the first time. We report measurements of 53 transitions originating from the K-shells of He-like to B-like silicon in the energy range between ∼1795 and 1880 eV (6.6–6.9 Å). The lines were identified by qualitative comparison against a full synthetic spectrum calculated with ATOMIC. The average fractional uncertainty (uncertainty/energy) for all reported lines is ∼5.4 × 10 −5 . We compare the measured quantities against transition energies calculated with RATS and FAC as well as those reported in the NIST ASD and XSTAR’s uaDB. Average absolute differences relative to experimentally measured values are 0.20, 0.32, 0.17 and 0.38 eV, respectively. All calculations/databases show good agreement with the experimental values; NIST ASD shows the closest match overall.

astrophysical plasmas↗
DOE OSTI2020

Nonadiabatic Effects on Defect Diffusion in Silicon-Doped Nanographenes

Single atom impurities in graphene, substitutional silicon defects in particular, have been observed to diffuse under electron beam irradiation. However, the relative importance of elastic and inelastic scattering in facilitating their mobility remains unclear. Here, we employ excited-state electronic structure calculations to explore potential inelastic effects, and find an electronically nonadiabatic excited-state silicon diffusion pathway involving “softened” Si–C bonding that presents an ~2 eV lower diffusion barrier than the ground-state pathway. Beam-induced transition rates to this state indicate that the excited-state pathway is accessible through irradiation of the defect site. However, even in the limit of fully elastic scattering, upward nonadiabatic transitions are also possible along the diffusion coordinate, increasing the diffusion barrier and further demonstrating the potential for electronic nonadiabaticity to influence beam-induced atomic transformations in materials. Additionally, we also propose some experimentally testable signatures of such excited-state pathways.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2025

Red-Light-Driven Biophotochemical Diode Based on a Microorganism–Silicon Nanowire Interface for Stable and Efficient Bias-Free CO 2 Reduction

Artificial photosynthesis offers a promising route for sustainable liquid fuel and feedstock production, yet integrating efficient CO 2 reduction catalysts with light-harvesting systems remains challenging. Here, in this study, we present a biophotochemical diode that couples microorganism-driven CO 2 reduction with glycerol oxidation, enabled by silicon nanowire photoelectrodes under varying red-light intensities. Tuning the biotic-abiotic interface─by increasing biocatalyst loading and adjusting the catholyte pH to mitigate local alkalization─significantly improves performance and stability. The enhanced-loading biocathode maintains a high faradaic efficiency across a wide potential range, even under elevated light intensities. At 60 mW/cm 2 , the system achieves a bias-free current density of 3.5 mA/cm 2 . Long-term stability testing at 40 mW/cm 2 demonstrates stable operation for over 100 h. The photoanode generates valuable C 3 products, primarily glycerate and lactate, enhancing the economic viability. This work showcases the importance of microenvironmental control at the biotic-abiotic interface and establishes a scalable platform for light-driven CO 2 reduction using earth-abundant silicon.

Artificial Photosynthesis↗
DOE OSTI2021

Three-Dimensional Integration of Functional Oxides and Crystalline Silicon for Optical Neuromorphic Computing Using Nanometer-Scale Oxygen Scavenging Barriers

Dating to the first reports of epitaxial oxide deposition on Si(001), the integration of complex oxides on silicon has been a fast-moving area of research, where fundamental materials physics is intimately connected to tremendous technological promise in such areas as integrated electronics, optical neuromorphic and quantum computing, and sensing, to name a few. Despite their great promise, devices relying on the co-integration of silicon and epitaxial perovskites are typically limited to basic, planar geometries due to practical issues with their fabrication. In this paper, we overcome these long-standing challenges by developing a method to produce high-quality Si(001)/TMO/Si(001)/TMO heterostructures without wafer bonding, resulting in the straightforward three-dimensional integration of functional complex oxides and active Si(001) layers into a technologically relevant platform that is needed for on-chip hardware implementations of neuromorphic computing based on optical signals. We present detailed structural and chemical characterization of our heterostructures and discuss generalized design rules for their fabrication. Our results exponentially expand the universe of practically achievable TMO-based integrated devices and push this promising class of materials closer to realizing their full technological potential.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Polymeric Electron-Selective Contact for Crystalline Silicon Solar Cells with an Efficiency Exceeding 19%

Carrier-selective contacts have become a prominent path forward toward efficient crystalline silicon (c-Si) photovoltaics. Among the proposed contacting materials, organic materials may offer simplified and low-cost processing compared with typical vacuum deposition techniques. In this paper, branched polyethylenimine (b-PEI) is presented as an electron-transport layer (ETL) for c-Si solar cells. The incorporation of a b-PEI interlayer between c-Si(n) and Al leads to a low contact resistivity of 24 mΩ cm 2 . A silicon heterojunction solar cell integrated with b-PEI is demonstrated achieving a power conversion efficiency of 19.4%, which improves the benchmark efficiency of a c-Si solar cell with an organic ETL. This electron selectivity of b-PEI is attributed to its Lewis basicity, i.e., electron-donating ability, promoting favorable band bending at the c-Si surface for electron transport. Moreover, several other Lewis base polymers perform as efficient ETLs in organic/c-Si hybrid devices, indicating Lewis basicity could be a guideline for future organic ETL design.

14 SOLAR ENERGY↗
DOE OSTI2021

Distilling nanoscale heterogeneity of amorphous silicon using tip-enhanced Raman spectroscopy (TERS) via multiresolution manifold learning

Abstract Accurately identifying the local structural heterogeneity of complex, disordered amorphous materials such as amorphous silicon is crucial for accelerating technology development. However, short-range atomic ordering quantification and nanoscale spatial resolution over a large area on a-Si have remained major challenges and practically unexplored. We resolve phonon vibrational modes of a-Si at a lateral resolution of <60 nm by tip-enhanced Raman spectroscopy. To project the high dimensional TERS imaging to a two-dimensional manifold space and categorize amorphous silicon structure, we developed a multiresolution manifold learning algorithm. It allows for quantifying average Si-Si distortion angle and the strain free energy at nanoscale without a human-specified physical threshold. The multiresolution feature of the multiresolution manifold learning allows for distilling local defects of ultra-low abundance (< 0.3%), presenting a new Raman mode at finer resolution grids. This work promises a general paradigm of resolving nanoscale structural heterogeneity and updating domain knowledge for highly disordered materials.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Stability and molecular pathways to the formation of spin defects in silicon carbide

Abstract Spin defects in wide-bandgap semiconductors provide a promising platform to create qubits for quantum technologies. Their synthesis, however, presents considerable challenges, and the mechanisms responsible for their generation or annihilation are poorly understood. Here, we elucidate spin defect formation processes in a binary crystal for a key qubit candidate—the divacancy complex (VV) in silicon carbide (SiC). Using atomistic models, enhanced sampling simulations, and density functional theory calculations, we find that VV formation is a thermally activated process that competes with the conversion of silicon (V Si ) to carbon monovacancies (V C ), and that VV reorientation can occur without dissociation. We also find that increasing the concentration of V Si relative to V C favors the formation of divacancies. Moreover, we identify pathways to create spin defects consisting of antisite-double vacancy complexes and determine their electronic properties. The detailed view of the mechanisms that underpin the formation and dynamics of spin defects presented here may facilitate the realization of qubits in an industrially relevant material.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2022

A silicon singlet–triplet qubit driven by spin-valley coupling

Spin–orbit effects, inherent to electrons confined in quantum dots at a silicon heterointerface, provide a means to control electron spin qubits without the added complexity of on-chip, nanofabricated micromagnets or nearby coplanar striplines. Here, we demonstrate a singlet–triplet qubit operating mode that can drive qubit evolution at frequencies in excess of 200 MHz. This approach offers a means to electrically turn on and off fast control, while providing high logic gate orthogonality and long qubit dephasing times. We utilize this operational mode for dynamical decoupling experiments to probe the charge noise power spectrum in a silicon metal-oxide-semiconductor double quantum dot. In addition, we assess qubit frequency drift over longer timescales to capture low-frequency noise. We present the charge noise power spectral density up to 3 MHz, which exhibits a 1/ f α dependence consistent with α ~ 0.7, over 9 orders of magnitude in noise frequency.

97 MATHEMATICS AND COMPUTING↗