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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 415 records · Page 23
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Probability Density Function for the spatial and intensity distribution of neutron-induced defects in Silicon

The ability to model semiconductor device degradation under neutron irradiation depends upon having a robust modeling capability for the neutron-induced collision cascades as well as a means to analytically fit the resulting probability distributions of defect production and ionizing energy deposition for purposes of extrapolation to low-probability, high-consequence scenarios. In this paper, the widely-utilized binary collision approximation codes MARLOWE and SRIM are deployed in conjunction with a critical examination of their parameterizations as benchmarked against higher-fidelity molecular dynamics simulations. A simple 3-parameter form described by the Generalized Logistic Distribution is shown to be a good fit to Frenkel pair and ionization intensity distributions in bulk silicon. The BCA codes are then applied to simulate cascades in 5 nm layers of a representative gate-all-around nanosheet transistor, where joint probability distributions of threshold levels of damage to multiple layers are evaluated.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Impact of Wide-Bandgap Technology on Renewable Energy and Smart-Grid Power Conversion Applications Including Storage

Wide-bandgap (WBG) semiconductor devices are making their way into large-volume applications, including pivotal domains of societal infrastructure such as sustainable energy generation and conversion. Presented for a long time mainly as a synonym of high-temperature electronics, hands-on experience has highlighted a number of gains that can be drawn from this technology even when used as a straightforward drop-in substitute of silicon in established applications and field-proven designs. Incremental in nature, these gains enable interesting progress beyond state-of-the-art forms, which, though not corresponding to the full exploitation of the potential of this technology, are oftentimes sufficient to justify its adoption. With particular reference to renewable energy power conversion and solid-state transformation, in the context of transport applications and incorporating a storage device, this paper reports on the understanding generated over the past few years and points out some specifically tailored technology and circuit design requirements to ensure overall beneficial impact of the adoption of WBG technology.

Castellazzi, Alberto↗
DOE OSTI2026

Recent progress in atomic-scale controlled plasma processing

Atomic-scale control in plasma processing is becoming increasingly critical for fabricating of advanced semiconductor devices, particularly as the industry shifts toward three-dimensional (3D) architectures and high-aspect-ratio (HAR) structures. This review presents a comprehensive overview of recent developments in atomic-scale controlled plasma processes, organized along two key directions: the hierarchical structure of plasma–surface interactions and the generational evolution of atomic layer processing (ALP) technologies. We examined the gas phase, where molecular design enables selective generation of ions and radicals; the boundary layer, where transport phenomena govern species delivery into nanoscale features, and the surface, where temperature-dependent reactions and cyclic processing determine etching selectivity and precision. Building on this foundation, we outline five generations of ALP—from thermal atomic layer deposition to transport-aware, temporally and structurally decoupled processes—highlighting the increasing sophistication of process control. The review further explores the transition from empirical recipe development to science-based, data-driven methodologies. By integrating quantum-chemical modeling, advanced diagnostics, and machine learning, we demonstrated how predictive models can link plasma species composition to process outcomes, enabling autonomous and adaptive control strategies. Finally, this review discusses the broader societal implications of plasma process innovation through the E4 quartet: energy and resource efficiency, environmental sustainability, evolutionary advancement, and educational promotion. These principles guide the development of sustainable and intelligent atomic-scale manufacturing technologies that are not only technically advanced but also socially responsible.

Ishikawa, Kenji [Nagoya Univ. (Japan)] (ORCID:0000↗
DOE OSTI2018

Analysis of Deep and Shallow Traps in Semi-Insulating CdZnTe

Trap levels which are deep or shallow play an important role in the electrical and the optical properties of a semiconductor; thus, a trap level analysis is very important in most semiconductor devices. Deep-level defects in CdZnTe are essential in Fermi level pinning at the middle of the bandgap and are responsible for incomplete charge collection and polarization effects. However, a deep level analysis in semi-insulating CdZnTe (CZT) is very difficult. Theoretical capacitance calculation for a metal/insulator/CZT (MIS) device with deep-level defects exhibits inflection points when the donor/acceptor level crosses the Fermi level in the surface-charge layer (SCL). Three CZT samples with different resistivities, 2 × 10 4 (n-type), 2 × 10 6 (p-type), and 2 × 10 10 (p-type) Ω·cm, were used in fabricating the MIS devices. These devices showed several peaks in their capacitance measurements due to upward/downward band bending that depend on the surface potential. In conclusion, theoretical and experimental capacitance measurements were in agreement, except in the fully compensated case.

36 MATERIALS SCIENCE↗
DOE OSTI2017

An Advanced Extreme-Environment Wireless Telemetry System for Turbine Blade Instrumentation

As advanced natural gas power generation systems evolve, the thrust for increased efficiencies and reduced emissions results in increasingly harsh conditions inside the turbine environment. These high temperatures, pressures, and corrosive atmospheres result in accelerated rates of degradation, leading to failure of turbine materials and components. Wolfspeed, A Cree Company, Siemens Energy, and Siemens Corporate Technology, in collaboration with the Department of Energy (DOE)'s National Energy Technology Laboratory, are developing a reliable and long-term monitoring capability in the turbine hot gas path in the form of novel ceramic-based thermocouples and wide bandgap instrumentation electronics that will contribute to the overall reliability of gas turbines. When equipped with better monitoring and controls, power plants can operate with increased fuel-burning efficiency, improved process dynamics and gas concentrations, and increased overall longevity of the power plant components. This will result in increased turbine availability and a reduction in outages and maintenance costs. The technology being developed in this program is based on advanced techniques and innovations in nearly every aspect of high-temperature electronics, including materials, semiconductor devices, subcomponents, electronic packaging, and system integration. The environment in which this wireless system must operate has continuous centrifugal loads with a gravitation force on the order of 16,000 times the force of gravity (16,000 g) and temperatures exceeding 400°C. This article will specifically discuss the background and motivation for the high-temperature instrumentation system and will explain the high-level electrical system, the construction of the instrumentation package, the techniques used for integration onto rotating components, as well as the wireless power and data transmission systems. In addition to the electrical and mechanical design, this article will also discuss results from laboratory bench testing as well as heated spin rig testing. Lastly, this article will highlight the future direction of the instrumentation system evolution, with a final objective of insertion into Siemens natural gas turbine power plants.

47 OTHER INSTRUMENTATION↗
DOE OSTI2017

Calcium as a nonradiative recombination center in InGaN

Calcium can be unintentionally incorporated during the growth of semiconductor devices. Using hybrid functional first-principles calculations, we assess the role of Ca impurities in GaN. Ca substituted on the cation site acts as a deep acceptor with a level ~1 eV above the GaN valence-band maximum. We find that for Ca concentrations of 1017 cm -3 , the Shockley–Read–Hall recombination coefficient, A, of InGaN exceeds 106 s -1 for band gaps less than 2.5 eV. A values of this magnitude can lead to significant reductions in the efficiency of light-emitting diodes.

Shen, Jimmy-Xuan↗
DOE OSTI2014

Methods of manipulating stressed epistructures

A method of processing an epistructure or processing a semiconductor device including associating a conformal and flexible handle with the epistructure and removing the epistructure and handle as a unit from the parent substrate. The method further includes causing the epistructure and handle unit to conform to a shape that differs from the shape the epistructure otherwise inherently assumes upon removal from the parent substrate. A device prepared according to the disclosed methods.

42 ENGINEERING↗
DOE OSTI2015

Silicon nanocrystal inks, films, and methods

Silicon nanocrystal inks and films, and methods of making and using silicon nanocrystal inks and films, are disclosed herein. In certain embodiments the nanocrystal inks and films include halide-terminated (e.g., chloride-terminated) and/or halide and hydrogen-terminated nanocrystals of silicon or alloys thereof. Silicon nanocrystal inks and films can be used, for example, to prepare semiconductor devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2017

Selective nanoscale growth of lattice mismatched materials

Exemplary embodiments provide materials and methods of forming high-quality semiconductor devices using lattice-mismatched materials. In one embodiment, a composite film including one or more substantially-single-particle-thick nanoparticle layers can be deposited over a substrate as a nanoscale selective growth mask for epitaxially growing lattice-mismatched materials over the substrate.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Selective nanoscale growth of lattice mismatched materials

Exemplary embodiments provide materials and methods of forming high-quality semiconductor devices using lattice-mismatched materials. In one embodiment, a composite film including one or more substantially-single-particle-thick nanoparticle layers can be deposited over a substrate as a nanoscale selective growth mask for epitaxially growing lattice-mismatched materials over the substrate.

Lee, Seung -Chang↗
DOE OSTI2015

Selective nanoscale growth of lattice mismatched materials

Exemplary embodiments provide materials and methods of forming high-quality semiconductor devices using lattice-mismatched materials. In one embodiment, a composite film including one or more substantially-single-particle-thick nanoparticle layers can be deposited over a substrate as a nanoscale selective growth mask for epitaxially growing lattice-mismatched materials over the substrate.

Lee, Seung -Chang↗
DOE OSTI2019

Automating Anharmonic Lattice Thermal Conductivity Calculations using Compressed Sensing Lattice Dynamics [Poster]

Engineering heat transfer is critical for applications in heat exchangers, semiconductor devices, thermoelectrics and more. This demand motivates a high-throughput computational methodology for systematically designing materials with improved thermal properties. One emerging method which can rapidly and explicitly consider phonon-phonon interactions even for highly anharmonic materials is Compressive Sensing Lattice Dynamics (CSLD). In fact, CSLD accurately predicts 2nd (harmonic) and 3rd+ order (anharmonic) interatomic force constants (IFCs) with orders of magnitude fewer Density Functional Theory (DFT) calculations than conventional methods. However, doing CSLD can be an exhaustive, many-step process requiring an intimate knowledge of its sensitivity to parameters. Consequently, this work implements an automatic CSLD workflow capable of obtaining the thermal conductivity of potentially thousands of materials, benchmarks the stability of the workflow against materials with a range of anharmonicity, and begins constructing a dataset of thermal conductivity values and phonon dispersion curves to be stored in the Materials Project for public use.

Chang, Rees↗
DOE OSTI2020

Modular, multi-channel, interleaved power converters

A multi-phase power converter includes two or more multi-phase, bi-directional, multi-level, switching power converter subcircuits, connected in parallel at respective AC and DC sides, so as to provide a multi-channel, bi-directional, multi-level configuration. The AC sides of the switching converter subcircuits are directly coupled to one another and to a multi-phase AC input via series interface reactors, and the DC sides of the switching converter subcircuits are directly connected to one another and to a common split-capacitor bank at each level of the multi-level outputs of the switching converter subcircuits. A control circuit is configured to selectively control one or more switching semiconductor devices in each of the switching converter subcircuits. In some embodiments, the control circuit includes a closed-loop zero-sequence controller and a zero-sequence generator configured to eliminate circulating current among the switching converter subcircuits and to balance voltages across levels of the common split-capacitor bank.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2021

Grid-Connected Self-Synchronous Cascaded H-Bridge Inverters with Autonomous Power Sharing: Preprint

Cascaded inverters are widely applied in applications where elevated ac voltages are required while using semiconductor devices with lower voltage ratings. Here, we focus on structures that require localized power transfer between low-voltage sources/loads dispersed across inverter dc links and the inverter ac-sides are series-connected across a three-phase medium-voltage ac grid. To date, decentralized controllers that allow for bi-directional power transfer in such systems are limited. To fill this gap, we propose a virtual oscillator controller which modulates the power processed by each inverter in a purely decentralized manner.

autonomous power sharing↗
DOE OSTI2021

IEEE P2988: Recommended Practice of Use and Functions of Virtual Synchronous Machines

Power systems are going through a paradigm shift from centralized generation to distributed generation. This brings unprecedented challenges to power systems stability, reliability, and security. Operating power electronic converters as Virtual Synchronous Machines (VSMs) can bring backward compatibility to power systems, unify and harmonize the integration and interaction of future power systems players, and improve power system stability, reliability, and security. This is vital for the large-scale adoption of distributed energy resources, the advancement of sustainability, and the development of a low-carbon economy. This IEEE 2988 Recommended Practice will define the fundamental principles, mandatory functions, and optional functions of a VSM, i.e., a power electronic converter that is operated to behave like conventional synchronous machines. It will not describe or specify power semiconductor devices, hardware topologies, or micro-controllers that are used to build a VSM. This talk will discuss the activities and development plan for IEEE 2988 with the aim to engaging broad stakeholders and widening participation.

Zhong, Qing-Chang↗
DOE OSTI2022

Three-phase differential mode converter

A system for charging a battery includes three sub-modules, each receiving a respective phase of a three-phase alternating current (AC) signal. The three sub-modules cooperate to transform the respective phases of the three-phase AC signal to a direct current (DC) signal by passing the respective phases of the three-phase AC signal through a respective semiconductor device configured to discontinuously modulate the respective phase of the three-phase AC signal to convert it to a DC signal provided to the battery to charge the battery.

Mazumder, Sudip K.↗
DOE OSTI2024

Three-phase differential mode converter

A system for charging a battery includes three sub-modules, each receiving a respective phase of a three-phase alternating current (AC) signal. The three sub-modules cooperate to transform the respective phases of the three-phase AC signal to a direct current (DC) signal by passing the respective phases of the three-phase AC signal through a respective semiconductor device configured to discontinuously modulate the respective phase of the three-phase AC signal to convert it to a DC signal provided to the battery to charge the battery.

Mazumder, Sudip K.↗
DOE OSTI2024

Method for implant and anneal for high voltage field effect transistors

In an example, the present invention provides a method of forming a semiconductor device on a gallium and nitrogen containing material. The method includes providing a substrate member comprising a surface region, the substrate member comprising a gallium and nitrogen bearing material. The method includes causing an implanted species to electrically activate the implant profile while removing one or more crystalline damage from the epitaxial material to change the amorphous state to a single crystalline state, and thereby creating a substantially electrically activated crystalline material.

Shealy, James R.↗