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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 415 records · Page 23
All sourcesNASA NTRSDOE OSTI
NASA NTRS2008

SiC vs. Si for High Radiation Environments: NASA Electronic Parts and Packaging (NEPP) Program Office of Safety and Mission Assurance

Commercial silicon carbide and silicon Schottky barrier power diodes have been subjected to 203 MeV proton irradiation and the effects of the resultant displacement damage on the I-V characteristics have been observed. Changes in forward bias I-V characteristics are reported for fluences up to 4 x 10(exp 14) p/cm2. For devices of both material types, the series resistance is observed to increase as the fluence increases. The changes in series resistance result from changes in the free carrier concentration due to carrier removal by the defects produced. A simple model is presented that allows calculation of the series resistance of the device and then relates the carrier removal rate to the changes in series resistance. Using this model to calculate the carrier removal rate in both materials reveals that the carrier removal rate in silicon is less than that in silicon carbide, indicating that silicon is the more radiation tolerant material.

Schottky barrier power diodes↗
DOE OSTI2026

Monochromation of pulsed electron beams with terahertz radiation at a planar mirror

Exquisite control of electron beam energy is required for many electron spectroscopy and imaging applications. For both continuous and pulsed beams, the beam energy spread is fundamentally limited by the electron source, and is typically a sizable fraction of an electron-volt. In this paper, we present a means to reduce electron beam energy spread after emission to the level of a few 10s of meV rms using femtosecond photoemission and an interaction with laser-derived single- to few-cycle terahertz (THz) radiation. We show analytically and in particle tracking simulations that this interaction can remove energy spread stored in both the transverse and longitudinal degrees of freedom. We analytically formulate the limit of energy spread that this technique can achieve, and map the non-ideal affects arising at high frequencies. The interaction is mediated by the beam's passage through a mirror which is reflective to terahertz radiation but allows transmission of the majority of the electron beam (e.g. a wire mesh). This method then only requires beam current losses of a few tens of percent, far smaller than what is achieved in prism and slit-based electron monochromators.

Accelerator Physics (physics.acc-ph)↗
NASA NTRS2001

Miniature Free-Flying Magnetometer Utilizing System-On-A-Chip Technology

Four Free-Flying Magnetometers (FFMs), developed at the Jet Propulsion Laboratory (JPL) for the Enstrophy mission, were successfully deployed from the payload of a sounding rocket launched from Poker Flats, Alaska on February 11, 1999. The FFMs functioned successfully by synchronously measuring the vector magnetic field at 4 points separate from the payload and at relative distances up to 3 km, and communicated their data, in bursts, to the ground. This is the first time synchronized in-situ multipoint measurements of the Earth's magnetic field utilizing miniature spin-stabilized "sensorcraft" have been performed. The data they provided have enabled, for the first time, the direct measure of field-aligned current density and are enabling new science by determining the fine-scale structure of the currents in the Earth's ionosphere involved in the production of aurora. These proof-of-concept "hockey puck" (80 mm diameter, 38 mm height, 250 gram mass) FFMs were built using off-the-shelf commercial, industrial, and military grade surface-mount electronic components. Radiation-hard electronics was not required for the Enstrophy mission's short sub-orbital flight. The successful design, implementation, and flight demonstration of this 1st generation FFM design has provided a solid base for further development of a 2nd generation FFM design for planetary science applications. A reliable ultra-miniature radiation-hard 2nd-generation FFM utilizing System-On-A-Chip (SOAC) technologies is proposed. This design would be targeted for long-term planetary missions to investigate magnetospheric field configurations in regions having small-scale structure and to separate spatial and temporal variations. A fleet of short-lived (expendable) FFMs would be deployed into a targeted region to gather multiprobe vector magnetic field data. The FFMs would be ejected from a parent spacecraft at a speed of a few m/sec and would cover spatial volumes of order tens of kilometers for times of order one hour. The parent spacecraft would carry a sufficient number of FFMs for multiple deployments. Additional information is contained in the original extended abstract.

Eyre, F. B.↗
DOE OSTI2023

Proton radiation effects on electronic defect states in MOCVD-grown (010) β -Ga 2 O 3

The impact of 1.8 MeV proton irradiation on metalorganic chemical vapor deposition grown (010) β-Ga 2 O 3 Schottky diodes is presented. It is found that after a 10.8 × 10 13 cm –2 proton fluence the Schottky barrier height of (1.40 ± 0.05 eV) and the ideality factor of (1.05 ± 0.05 ) are unaffected. Capacitance–voltage extracted net ionized doping curves indicate a carrier removal rate of 268 ± 10 cm –1 . The defect states responsible for the observed carrier removal are studied through a combination of deep level transient and optical spectroscopies (DLTS/DLOS) as well as lighted capacitance–voltage (LCV) measurements. The dominating effect on the defect spectrum is due to the E c -2.0 eV defect state observed in DLOS and LCV. This state accounts for ~75 % of the total trap introduction rate and is the primary source of carrier removal from proton irradiation. Of the DLTS detected states, the E c -0.72 eV state dominated but had a comparably smaller contribution to the trap introduction. These two traps have previously been correlated with acceptor-like gallium vacancy-related defects. Several other trap states at E C -0.36, E C -0.63, and E C -1.09 eV were newly detected after proton irradiation, and two pre-existing states at E C -1.2 and E C -4.4 eV showed a slight increase in concentration after irradiation, together accounting for the remainder of trap introduction. However, a pre-existing trap at E c -0.40 eV was found to be insensitive to proton irradiation and, therefore, is likely of extrinsic origin. Furthermore, the comprehensive defect characterization of 1.8 MeV proton irradiation damage can aid the modeling and design for a range of radiation tolerant devices.

42 ENGINEERING↗