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At least 415 records · Page 23
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Quantum Size Effects, Multiple Dirac Cones, and Edge States in Ultrathin Bi(110) Films

The presence of inherently strong spin–orbit coupling in bismuth, its unique layer-dependent band topology and high carrier mobility make it an interesting system for both fundamental studies and applications. Theoretically, it has been suggested that strong quantum size effects should be present in the Bi(110) films, with the possibility of Dirac Fermion states in the odd-bilayer (BL) films, originating from dangling p z orbitals and quantum-spin hall (QSH) states in the even-bilayer films. However, the experimental verification of these claims has been lacking. Here, we study the electronic structure of Bi(110) films grown on a high-T c superconductor, Bi 2 Sr 2 CaCu 2 O 8+δ (Bi2212) using angle-resolved photoemission spectroscopy (ARPES). We observe an oscillatory behavior of electronic structure with the film thickness and identify the Dirac-states in the odd-bilayer films, consistent with the theoretical predictions. In the even-bilayer films, we find another Dirac state that was predicted to play a crucial role in the QSH effect. In the low thickness limit, we observe several extremely one-dimensional states, probably originating from the edge-states of Bi(110) islands. Our results provide a much needed experimental insight into the electronic and structural properties of Bi(110) films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Photoinduced anomalous Hall effect in two-dimensional transition metal dichalcogenides

A circularly polarized ac pump field illuminated near resonance on two-dimensional transition metal dichalcogenides (TMDs) produces an anomalous Hall effect in response to a dc bias field. In this work, we develop a theory for this photoinduced anomalous Hall effect in undoped TMDs irradiated by a strong coherent laser field. The strong field renormalizes the equilibrium bands and opens up a dynamical energy gap where single-photon resonance occurs. The resulting photon dressed states, or Floquet states, are treated within the rotating-wave approximation. A quantum kinetic equation approach is developed to study the nonequilibrium density matrix and time-averaged transport currents under the simultaneous influence of the strong ac pump field and the weak dc probe field. Dissipative effects are taken into account in the kinetic equation that captures relaxation and dephasing. The photoinduced longitudinal and Hall conductivities display notable resonant signatures when the pump field frequency reaches the spin-split interband transition energies. Rather than valley polarization, we find that the anomalous Hall current is mainly driven by the intraband response of photon-dressed electron populations near the dynamical gap at both valleys, accompanied by a smaller contribution due to the interband response. In conclusion, these findings highlight the importance of photon-dressed bands and nonequilibrium distribution functions in achieving a proper understanding of the photoinduced anomalous Hall effect in a strong pump field.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Electronic properties of correlated kagomé metals AV 3 Sb 5 (A = K, Rb, and Cs): A perspective

Following the discovery of a new family of kagomé prototypical materials with structure AV 3 Sb 5 (A=K, Rb, and Cs), there has been a heightened interest in studying the correlation-driven electronic phenomena in these kagomé lattice systems. The study of these materials has gone beyond magneto-transport measurements to reveal exciting features such as Dirac bands, anomalous Hall effect, bulk superconductivity with T c ~0.9–2.5K, and the observation of charge density wave instabilities, suggesting an intertwining of topological physics and new quantum orders. Moreover, very recent works on numerous types of experiments have appeared further examining the unconventional superconductivity and the exotic electronic states found within these kagomé materials. Theories on the strong interactions that play a role in these systems have been proposed to shed light on the nature of these topological charge density waves. In this brief review, we summarize these recent experimental findings and theoretical proposals and envision the materials as new platforms to study the interplay between topological physics and strongly correlated electronic systems.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Atomic layer molecular beam epitaxy of kagome magnet RMn6Sn6 (R = Er, Tb) thin films

Kagome lattices have garnered substantial interest because their band structure consists of topological flat bands and Dirac cones. The RMn6Sn6 (R = rare earth) compounds are particularly interesting because of the existence of the large intrinsic anomalous Hall effect (AHE), which originates from the gapped Dirac cones near the Fermi level. This makes RMn6Sn6 an outstanding candidate for realizing the high-temperature quantum AHE. The growth of RMn6Sn6 thin films is beneficial for both fundamental research and potential applications. However, most of the studies on RMn6Sn6 have focused on bulk crystals, and the synthesis of RMn6Sn6 thin films has not been reported so far. Here, we report the atomic layer molecular beam epitaxy growth, structural and magnetic characterizations, and transport properties of ErMn6Sn6 and TbMn6Sn6 thin films. It is especially noteworthy that TbMn6Sn6 thin films have out-of-plane magnetic anisotropy, which is important for realizing the quantum AHE. Our work paves the avenue toward the control of the AHE using devices patterned from RMn6Sn6 thin films.

Materials Science↗
DOE OSTI2020

Itinerant ferromagnetism and intrinsic anomalous Hall effect in amorphous iron-germanium

The amorphous iron-germanium system ( a - Fe x Ge 1 - x ) lacks long-range structural order and hence lacks a significant Brillouin zone. The magnetization of a - Fe x Ge 1 - x is well explained by the Stoner model for Fe concentrations x above the onset of magnetic order around x = 0.4 , indicating that the local order of the amorphous structure preserves the spin-split density of states of the Fe- 3 d states sufficiently to polarize the electronic structure despite k being a bad quantum number. Measurements reveal an enhanced anomalous Hall resistivity ρ x y AH relative to crystalline FeGe; this ρ x y AH is compared to density-functional theory calculations of the anomalous Hall conductivity to resolve its underlying mechanisms. The intrinsic mechanism, typically understood as the Berry curvature integrated over occupied k states but shown here to be equivalent to the density of curvature integrated over occupied energies in aperiodic materials, dominates the anomalous Hall conductivity of a - Fe x Ge 1 - x ( 0.38 ≤ x ≤ 0.61 ). The density of curvature is the sum of spin-orbit correlations of local orbital states and can hence be calculated with no reference to k space. This effect and the accompanying Stoner-like model for the intrinsic anomalous Hall conductivity establish a unified understanding of the underlying physics of the anomalous Hall effect in both crystalline and disordered systems.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Non-Abelian quasiparticles and topological superconductivity for the quantum information science

The research performed on this proposal lead to significant progress in understanding spectra of charge carrier holes in spin 3/2 valence bands in two-dimensional systems and topological phenomena in these systems; resulted in enhanced knowledge of topological excitations, such as Majorana fermions and parafermions in electron and hole systems; lead to new breakthroughs in understanding quantum Hall systems, which is an important breeding ground for topological excitations; contributed to understanding of several aspects of theory of spin-orbit interactions; and understanding of hybrid superconductor/semiconductor structures. Methods and techniques used or developed in the research were effective in achieving its results. Some of the developed methods have been used by the research community. The achieved results are beneficial for both theorists and experimentalists in condensed matter and related areas of research, developed knowledge is important for progress in quantum science and technology, and therefore is of benefit to the public.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Giant resonances in topological spin Hall effect due to electron-skyrmion scattering in two-dimensional Rashba spin-orbit ferromagnets

Here we study a topological spin Hall effect where conduction electrons are scattered by Néel-type skyrmions in two-dimensional Rashba spin-orbit ferromagnets. We find the resonance structures in direct and Hall electric conductivities. The resonances strongly depend on the skyrmion size, the Rashba spin-orbit coupling vector value, and the relative direction between magnetization and Rashba vectors. The antiparallel arrangement of the Rashba spin-orbit coupling vector with respect to the magnetization determines the resonance structure and increases the direct conductivity by about two orders of magnitude. For the parallel arrangement the electric conductivities decrease by one to three orders of magnitude and the Hall conductivity changes the sign. The Rashba spin-orbit coupling also modifies electron bands depending on the ratio ε R /J, where ε R is Rashba energy and J is an exchange integral between conduction and localized electrons. If ε R /J ≤ 1, each energy band has the single minimum while for ε R /J > 1 the lower band has the “Mexican-hat” shape with the maximum at k = 0. We focus on the dependencies of direct and Hall electric conductivities on Fermi energy, ε F , skyrmion sizes, and Rashba spin-orbit coupling constant values and its relative direction with the magnetization. Analyzing both types of the energy bands, in general, we find two types of resonances: at the minimum of the upper band and behaviors, we employ the scattering pattern analysis. The resonance dependencies on skyrmion sizes and Rashba, a spin-orbit coupling contestant, can be qualitatively explained in terms of the Ramsauer-Townsend scattering of the upper band electrons by the skyrmion quantum well. The resonance properties can be used in spin transistors. To discover the resonances it is necessary to know the specific range of the parameters. At some values of the parameters the electric conductivity changes by about two orders of magnitude in the narrow range of ε F (< 0.01 eV). To detect the resonances it is also important to identify the relative direction of the Rashba spin-orbit coupling vector with respect to the magnetization.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Electric control of a canted-antiferromagnetic Chern insulator

Abstract The interplay between band topology and magnetism can give rise to exotic states of matter. For example, magnetically doped topological insulators can realize a Chern insulator that exhibits quantized Hall resistance at zero magnetic field. While prior works have focused on ferromagnetic systems, little is known about band topology and its manipulation in antiferromagnets. Here, we report that MnBi 2 Te 4 is a rare platform for realizing a canted-antiferromagnetic (cAFM) Chern insulator with electrical control. We show that the Chern insulator state with Chern number C = 1 appears as the AFM to canted-AFM phase transition happens. The Chern insulator state is further confirmed by observing the unusual transition of the C = 1 state in the cAFM phase to the C = 2 orbital quantum Hall states in the magnetic field induced ferromagnetic phase. Near the cAFM-AFM phase boundary, we show that the dissipationless chiral edge transport can be toggled on and off by applying an electric field alone. We attribute this switching effect to the electrical field tuning of the exchange gap alignment between the top and bottom surfaces. Our work paves the way for future studies on topological cAFM spintronics and facilitates the development of proof-of-concept Chern insulator devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Photon pumping in a weakly-driven quantum cavity–spin system

Highlights: • We study photon frequency conversion in a driven spin coupled to a cavity mode. • Quantized frequency conversion is excpected in the strong-drive adiabatic limit. • A new photon pumping effect is established in the accessible weak drive regime. • Pumping is linked to the delocalization of the corresponding Floquet states. • Quantum coherence is preserved in both the strong and ultraweak-drive limits. We investigate the photon pumping effect in a topological model consisting of a periodically driven spin-1/2 coupled to a quantum cavity mode out of the adiabatic limit. In the strong-drive adiabatic limit, a quantized frequency conversion of photons is expected as the temporal analog of the Hall current. We numerically establish a novel photon pumping phenomenon in the experimentally accessible nonadiabatic driving regime for a broad region of the parameter space. The photon frequency conversion efficiency exhibits strong fluctuations and high efficiency that can reach up 80% of the quantized value for commensurate frequency combinations. We link the pumping properties to the delocalization of the corresponding Floquet states which display multifractal behavior as the result of hybridization between localized and delocalized sectors. Finally we demonstrate that the quantum coherence properties of the initial state are preserved during the frequency conversion process in both the strong and ultra-weak-drive limit.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Chiral-Bubble-Induced Topological Hall Effect in Ferromagnetic Topological Insulator Heterostructures

In this letter, we report compelling evidence of emergent topological Hall effect (THE) from chiral bubbles in a two-dimensional uniaxial ferromagnet, V-doped Sb 2 Te 3 heterostructure. The sign of THE signal is determined by the net curvature of domain walls in different domain configuration, and the strength of THE signal is correlated with the density of nucleation or pinned bubble domains. The experimental results are in good agreement with the integrated linear transport and Monte Carlo simulations, corroborating the emergent gauge field at chiral magnetic bubbles. Lastly, our findings not only reveal a general mechanism of THE in two-dimensional ferromagnets, but also pave the way for the creation and manipulation of topological spin textures for spintronic applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Proximity Magnetism in Mn(Bi,Sb) 2 Te 4 –(Bi,Sb) 2 Te 3 /MnTe Natural Heterostructures

Magnetic topological insulators and their heterostructures provide significant opportunities to couple band topology with a nontrivial spin configuration for enhanced spintronic device performance, as well as designing magnetoelectric systems and functionalities. We find that Mn interdiffusion from MnTe when interfaced with (Bi,Sb) 2 Te 3 stabilizes as self-organized Mn(Bi,Sb) 2 Te 4 septuple lamellae among alternating (Bi,Sb) 2 Te 3 quintuple layers, as observed using scanning transmission electron microscopy and depth-sensitive polarized neutron reflectometry. We further demonstrate a valuable combination of magnetic and topological orders in these naturally formed Mn(Bi,Sb) 2 Te 4 –(Bi,Sb) 2 Te 3 heterostructures, which are exchange-coupled with MnTe. Magnetotransport experiments and quantum magnetism simulations reveal that, above its own Néel temperature T N ∼ 20 K, Mn(Bi,Sb) 2 Te 4 mediates the exchange field leading to an anomalous Hall effect at the (Bi,Sb) 2 Te 3 /MnTe interface, with an enhanced interfacial T N exceeding 200 K, approaching that of the bulk MnTe. This magnetic interface, in turn, allows a robust and deterministic spin–orbit torque switching without an external magnetic field at a low critical current density of 3 × 10 5 A cm –2 . The antiferromagnetically coupled architecture of Mn(Bi,Sb) 2 Te 4 –(Bi,Sb) 2 Te 3 /MnTe, featuring magnetic and topological proximity effects across a chalcogenide backbone, is rich in fundamental interface physics and holds the potential for practical applications in spintronics.

magnetic topological insulator↗
DOE OSTI2021

Hidden strange metallic state in underdoped electron-doped cuprates

The low-temperature linear-in-T resistivity of “strange metals,” such as the metallic state of the cuprate high-temperature superconductors, has long been thought to be associated with a quantum critical point. However, recent transport studies of the cuprates have found this behavior persists over a finite range of overdoping. Here, in this work, we report magnetoresistance and Hall effect results for electron-doped films of the cuprate superconductor La 2-x ⁢ Ce x CuO 4 (LCCO) for temperatures from 0.7 to 45 K and magnetic fields up to 65 T. For x = 0.12 and 0.13, just below the Fermi surface reconstruction (FSR) at x = 0.14, the normal state in-plane resistivity exhibits a well-known upturn at low temperature. Our new results show that this resistivity upturn is eliminated at high magnetic field and the resistivity becomes linear-in-temperature from ~40 K down to 0.7 K. The magnitude of the linear coefficient scales with Tc and doping, as found previously for dopings above the FSR. This striking observation suggests that the strange metal is not confined to a single “critical point” in the phase diagram, but rather is a robust universal feature of the metallic ground state of the cuprates.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Controlling the dopant profile for SRH suppression at low current densities in λ ≈ 1330 nm GaInAsP light-emitting diodes

The quantum efficiency of double hetero-junction light-emitting diodes (LEDs) can be significantly enhanced at low current density by tailoring the spatial profile of dopants to suppress Shockley–Read–Hall recombination. To demonstrate this effect, we model, design, grow, fabricate, and test a GaInAsP LED (λ≈ 1330 nm) with an unconventional dopant profile. Compared against that of our control design, which is a conventional n + -n - p + double hetero-junction LED, the dopant profile near the n - p + hetero-structure of the design displaces the built-in electric field in such a way that the J 02 space charge recombination current is suppressed. The design principle generalizes to other material systems and could be applicable to efforts to observe and exploit electro-luminescent refrigeration at practical power densities.

42 ENGINEERING↗
DOE OSTI2025

Chiral edge state control of thermoelectric effects

Thermoelectric responses in two-dimensional electron gases subjected to magnetic fields have the potential to provide unique information about quasiparticle statistics. In this study, we show that chiral edge states play a key role in thermoelectric Hall bar measurements by completely controlling the direction of the internal thermal gradient. To this end, we perform measurements of the magnetothermoelectric responses of cadmium arsenide quantum wells. The magnetothermoelectric responses in the quantum Hall regime agree with theoretical predictions if one considers the role of chiral edge states, which flow in opposite directions on either side of the Hall bar and establish an internal temperature gradient that is perpendicular to the externally applied thermal gradient. We show that the results are self-consistent within this picture under different measurement conditions. We discuss potential applications of the findings, such as in nanoscale control of local temperature gradients and thermoelectric effects along with the characterization of other topological systems with chiral edges states.

Science & Technology - Other Topics↗
DOE OSTI2022

Epitaxial growth, magnetoresistance, and electronic band structure of GdSb magnetic semimetal films

Motivated by observations of extreme magnetoresistance (XMR) in bulk crystals of rare-earth monopnictide (RE-V) compounds and emerging applications in novel spintronic and plasmonic devices based on thin-film semimetals, we have investigated the electronic band structure and transport behavior of epitaxial GdSb thin films grown on III-V semiconductor surfaces. The Gd 3 + ion in GdSb has a high spin S=7/2 and no orbital angular momentum, serving as a model system for studying the effects of antiferromagnetic order and strong exchange coupling on the resulting Fermi surface and magnetotransport properties of RE-Vs. Here, we present a surface and structural characterization study mapping the optimal synthesis window of thin epitaxial GdSb films grown on III-V lattice-matched buffer layers via molecular-beam epitaxy. To determine the factors limiting XMR in RE-V thin films and provide a benchmark for band-structure predictions of topological phases of RE-Vs, the electronic band structure of GdSb thin films is studied, comparing carrier densities extracted from magnetotransport, angle-resolved photoemission spectroscopy (ARPES), and density-functional theory (DFT) calculations. ARPES shows a hole-carrier rich, topologically trivial, semimetallic band structure close to complete electron-hole compensation, with quantum confinement effects in the thin films observed through the presence of quantum-well states. DFT-predicted Fermi wave vectors are in excellent agreement with values obtained from quantum oscillations observed in magnetic field-dependent resistivity measurements. An electron-rich Hall coefficient is measured despite the higher hole-carrier density, attributed to the higher electron Hall mobility. The carrier mobilities are limited by surface and interface scattering, resulting in lower magnetoresistance than that measured for bulk crystals.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Adsorption-controlled growth of MnTe(Bi2Te3)n by molecular beam epitaxy exhibiting stoichiometry-controlled magnetism

We report the growth of the intrinsic magnetic topological system MnTe ( Bi 2 Te 3 ) n by molecular beam epitaxy. By mapping the temperature and the Bi:Mn flux ratio, it is shown that there is a narrow growth window for the n = 1 phase Mn Bi 2 Te 4 with 2.0 < Bi : Mn < 2.6 at 225°C. In this work, the films are stoichiometric and excess Bi and Te is not incorporated. At higher flux ratios (Bi:Mn≥4.5) it is found that the n = 2 Mn Bi 4 Te 7 phase is stabilized. Transport measurements indicate that the Mn Bi 2 Te 4 and Mn Bi 4 Te 7 undergo magnetic transitions around 25 and 10 K, respectively, consistent with antiferromagnetic phases found in the bulk. Further, for Mn-rich conditions (Bi:Mn<2), ferromagnetism emerges that exhibits a clear hysteretic state in the Hall effect, which likely indicates Mn-doped Mn Bi 2 Te 4 . Understanding how to grow ternary chalcogenide phases is the key to synthesizing new materials and to interface magnetism and topology, which together are routes to realize and control exotic quantum phenomena.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Generalized multifractality at spin quantum Hall transition

Generalized multifractality characterizes scaling of eigenstate observables at Anderson-localization critical points. We explore generalized multifractality in 2D systems, with the main focus on the spin quantum Hall (SQH) transition in superconductors of symmetry class C. Relations and differences with the conventional integer quantum Hall (IQH) transition are also studied. Using the field-theoretical formalism of non-linear sigma-model, we derive the pure-scaling operators representing generalizing multifractality and then “translate” them to the language of eigenstate observables. Performing numerical simulations on network models for SQH and IQH transitions, we confirm the analytical predictions for scaling observables and determine the corresponding exponents. Remarkably, the generalized-multifractality exponents at the SQH critical point strongly violate the generalized parabolicity of the spectrum, which implies violation of the local conformal invariance at this critical point.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2026

Discovery of van Hove singularities: electronic fingerprints of 3Q magnetic order in a van der Waals quantum magnet

Magnetically intercalated transition metal dichalcogenides are emerging as a rich platform for exploring exotic quantum states in van der Waals magnets. Among them, Co x TaS 2 has attracted intense interest following the recent discovery of a distinctive 3Q magnetic ground state and a pronounced topological Hall effect below a critical doping of x ≈ 1/3, both intimately tied to cobalt concentration. To date, direct signatures of this enigmatic 3Q magnetic order in the electronic structure remain elusive. Here we report a comprehensive doping dependent angle resolved photoemission spectroscopy study that unveils these long-sought fingerprints. Our data reveal an unexpected inverse-Mexican-hat dispersion along the K-M-K' direction, accompanied by two van Hove singularities. These features are consistent with theoretical predictions for a 3Q magnetic order near three-quarters band filling on a cobalt triangular lattice. These results provide evidence of 3Q magnetic order in the electronic structure, establishing TMD van der Waals magnets as tunable materials to explore the interplay between magnetism and topology.

Luo, Hai-Lan [University of California, Berkeley, ↗