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At least 415 records · Page 23

Spin–orbit torques in structures with asymmetric dusting layers

Current-induced spin–orbit torques (SOTs) in heavy metal/ferromagnet heterostructures have emerged as an efficient method for magnetization switching with applications in nonvolatile magnetic memory and logic devices. However, experimental realization of SOT switching of perpendicular magnetization requires an additional inversion symmetry breaking, calling for modifications of the conventional SOT heterostructures. In this work, we study SOTs and deterministic switching of perpendicular magnetization by inserting different asymmetric dusting layers at the heavy metal/ferromagnet interface. Similar to the previous works with lateral structural asymmetry, we study the emergence of current-induced perpendicular effective magnetic fields (H z eff ). By examining three different material combinations of heavy metal/dusting layers (W/IrMn, Pt/IrMn, and W/Ta), we shed light on the origins of H z eff ; we show that H z eff is generically created in all the studied asymmetric structures, has a close correlation with the interfacial magnetic anisotropy, and is independent of the signs of spin Hall angles of the materials. Furthermore, we show that the induction of H z eff enables field-free deterministic SOT switching of perpendicular magnetization. Our results can be used in designing SOT heterostructures for practical applications in nonvolatile technologies.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Stabilization of magnetic bubbles in [Ni/Co]n multilayers on an oxygen-reconstructed Nb(110) surface via an ultra-thin Cu interlayer

Magnetic thin films hosting topological spin textures, such as magnetic skyrmions, hold high potential for breakthroughs in the field of spintronics, due to good scalability and energy efficiency. Novel computational architectures such as memory-in-logic devices rely on material platforms able to host those topological spin textures. Furthermore, recently proposed designs of novel quantum information technologies are based on heterostructures where topological spin textures are in direct proximity to a superconducting layer. Here, we demonstrate the stabilization of out-of-plane magnetic bubbles in highly ordered [Ni/Co]n multilayers on a Nb(110) single crystal. This is achieved without the need for the removal of the well-known Nb(110)-oxide surface reconstruction, due to the introduction of an ultra-thin Cu interlayer in between the Nb substrate and the magnetic multilayer. The Cu interlayer generates a well-ordered hexagonal surface, which is key for the epitaxial growth of the [Ni/Co]n multilayers hosting the desired out-of-plane anisotropy. The magnetic ground state of the prepared material stacks is directly imaged via spin-polarized low-energy electron microscopy, revealing the presence of magnetic bubble domains with lateral sizes as small as 450 nm.

Dibajeh, Ahmad↗

Topological spin texture in Janus monolayers of the chromium trihalides Cr(I, X ) 3

Topological magnetic states are promising for ultradense memory and logic devices. Recent progress in two-dimensional magnets encourages the idea to realize topological states, such as skyrmions and merons, in freestanding monolayers. However, monolayers such as CrI 3 lack Dzyaloshinskii-Moriya interactions (DMIs) and thus do not naturally exhibit skyrmions/merons but rather a ferromagnetic state. Here we propose the fabrication of Cr(I, $X)_3$ Janus monolayers, in which the Cr atoms are covalently bonded to the underlying I ions and top-layer Br or Cl atoms. By performing first-principles calculations and Monte Carlo simulations, we identify strong enough DMIs, which leads to not only helical cycloid phases, but also to topologically nontrivial states, such as the intrinsic domain wall skyrmions in Cr(I, Br) 3 and the magnetic-field-induced bimerons in Cr(I, Cl) 3 . Finally, microscopic origins of such spin textures are revealed as well.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Spontaneous Valley Polarization of Itinerant Electrons

Memory or transistor devices based on an electron’s spin rather than its charge degree of freedom offer certain distinct advantages and comprise a cornerstone of spintronics. Recent years have witnessed the emergence of a new field, valleytronics, which seeks to exploit an electron’s valley index rather than its spin. An important component in this quest would be the ability to control the valley index in a convenient fashion. Here we show that the valley polarization can be switched from zero to 1 by a small reduction in density, simply tuned by a gate bias, in a two-dimensional electron system. This phenomenon, which is akin to Bloch spin ferromagnetism, arises fundamentally as a result of electron-electron interaction in an itinerant, dilute electron system. Essentially, the kinetic energy favors an equal distribution of electrons over the available valleys, whereas the interaction between electrons prefers single-valley occupancy below a critical density. The gate-bias-tuned transition we observe is accompanied by a sudden, twofold change in sample resistance, making the phenomenon of interest for potential valleytronic transistor device applications. Finally, our observation constitutes a quintessential demonstration of valleytronics in a very simple experiment.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Ferroelectric HfO 2 and the importance of strain

Ferroelectric oxides based on HfO 2 show tremendous promise for the next generation of memory and logic devices. The ferroelectric polymorph is one of several that can be derived from the high symmetry cubic fluorite structure of HfO 2 . A single grain of HfO 2 may consist of a coherent mixture of multiple orientational and translational variants of different polymorphs. Here, we use symmetry-adapted strain-order parameters to elucidate the relationship between the different HfO 2 polymorphs and their symmetrically equivalent variants. We use first-principles electronic structure methods to identify minimum energy pathways and map them in subspaces of the symmetry-adapted strain order parameters. We next investigate the atomic structure of domain boundaries that separate coexisting variants of ferroelectric HfO 2 . Further, we rely on Gibbsian excess quantities and a precise specification of mechanical boundary conditions to describe the thermodynamic properties of domain boundaries. Our first-principles calculations show that the O and Hf shuffle arrangement within a domain boundary is closely related to the intermediate shuffle patterns of the homogeneous pathways between ferroelectric variants. Furthermore, the preferred structure within a boundary is very sensitive to local strain constraints imposed by the adjacent ferroelectric variants, leading to highly anisotropic domain boundary energies.

36 MATERIALS SCIENCE↗

Modeling the Impacts of Material Properties on Oscillatory Neuron Behavior

In this study, neuromorphic computing, which mimics the functions of biological brains, offers improvements in both latency and energy efficiency over typical von Neumann computing architectures. Spiking neural networks can be especially power-efficient because they encode information temporally and can use more sparse electrical inputs. Here, we study the design of volatile memristors (variable resistors with memory) for neuronal devices, with particular consideration toward the feasibility of all-on-chip oscillation using built-in capacitance. We use circuit simulations to model the behavior of oscillator neurons with a range of realistic material properties. We find that energy inputs increase with insulating-phase resistivity, thermal conductivity, and device aspect ratio. However, we also find that the minimum capacitance needed for oscillation decreases with increasing insulating-phase resistivity, which opposes the constraints for power efficiency. Based on published data on NbO 2 , VO 2 , and EuNiO 3 , we find that existing materials can be engineered for all-on-chip spiking using their parasitic capacitance.

36 MATERIALS SCIENCE↗

Large enhancement of ferroelectric properties of perovskite oxides via nitrogen incorporation

Perovskite oxides have a wide variety of physical properties that make them promising candidates for versatile technological applications including nonvolatile memory and logic devices. Chemical tuning of those properties has been achieved, to the greatest extent, by cation-site substitution, while anion substitution is much less explored due to the difficulty in synthesizing high-quality, mixed-anion compounds. Here, nitrogen-incorporated BaTiO3 thin films have been synthesized by reactive pulsed-laser deposition in a nitrogen growth atmosphere. The enhanced hybridization between titanium and nitrogen induces a large ferroelectric polarization of 70 μC/cm2 and high Curie temperature of ~1213 K, which are ~2.8 times larger and ~810 K higher than in bulk BaTiO3, respectively. These results suggest great potential for anion-substituted perovskite oxides in producing emergent functionalities and device applications.

Wang, Tao↗

PLZT block data composers operated in differential phase mode

The use of PLZT ceramics with the 7/65/35 composition in block data composer (BDC) input devices for holographic memory systems has previously been described for operation in the strain biased, scattering, and edge effect modes. A new and promising mode of BDC operation is the differential phase mode in which each element of a matrix array BDC acts as a phase modulator. The phase modulation results from a phase difference in the optical path length between the electrically poled and depoled states of the PLZT. It is shown that a PLZT BDC can be used as a matrix-type phase modulator to record and process digital data by the differential phase mode in a holographic recording/processing system with readout contrast ratios of between 10:1 and 15:1. The differential phase mode has the advantages that strain bias is not required and that the thickness and strain variations in the PLZT are cancelled out.

Drake, M. D.↗

Mask and display program

Program is used to create complex lines, shapes, circles and alpha-numeric characters rapidly and easily, and format them for use on some pattern generation. System is applicable as aid to designers of microelectronics, integrated optics, bubble memories and other devices requiring precise artwork.

Routh, D.↗

Programable Interface Handles Many Peripherals

Microprocessor-based interface simplifies interconnection of peripheral device with common memory of network of minicomputers. Interface consists of microprocessor, bidirectional port that connects to common memory, bidirectional port that connects to user-selected peripheral, and asynchronous serial communications port. Programable interface is based around 6800 microprocessor. It is assembled from 90 integrated circuits.

Jasinski, M.↗

Index grating lifetime in photorefractive GaAs

The index grating lifetime in liquid encapsulated Czochralski-grown undoped semi-insulating GaAs was measured using a beam coupling technique. The largest lifetime measure was about 8 s under a read beam intensity of 0.7 mW/sq cm with the grating periodicity being 0.63 microns. The measured value decreases to milliseconds as the read beam intensity and the grating periodicity increase to about 10 mW/sq cm and 4 microns, respectively. This range of grating lifetime in this material is adequate for its use in real-time spatial light modulators, reconfigurable beam steering devices, and dynamic memory elements, for optical computing. In addition, the results suggest that the lifetime is sensitive to residual imperfections in the crystal.

Cheng, Li-Jen↗

Read disturb errors in a CMOS static RAM chip

Results are reported from an extensive investigation into pattern-sensitive soft errors (read disturb errors) in the TCC244 CMOS static RAM chip. The TCC244, also known as the SA2838, is a radiation-hard single-event-upset-resistant 4 x 256 memory chip. This device is being used by the Jet Propulsion Laboratory in the Galileo and Magellan spacecraft, which will have encounters with Jupiter and Venus, respectively. Two aspects of the part's design are shown to result in the occurrence of read disturb errors: the transparence of the signal path from the address pins to the array of cells, and the large resistance in the Vdd and Vss lines of the cells in the center of the array. Probe measurements taken during a read disturb failure illustrate how address skews and the data pattern in the chip combine to produce a bit flip. A capacitive charge pump formed by the individual cell capacitances and the resistance in the supply lines pumps down both the internal cell voltage and the local supply voltage until a bit flip occurs.

Wood, Steven H.↗

Rotary actuator

Rotary actuators and other mechanical devices incorporating shape memory alloys are provided herein. Shape memory alloys are a group of metals which when deformed at temperatures below their martensite temperatures, resume the shapes which they had prior to the deformation if they are heated to temperatures above their austensite temperatures. Actuators in which shape memory alloys are employed include bias spring types, in which springs deform the shape memory alloy (SMA), and differential actuators, which use two SMA members mechanically connected in series. Another type uses concentric cylindrical members. One member is in the form of a sleeve surrounding a cylinder, both being constructed of shape memory alloys. Herein two capstans are mounted on a shaft which is supported in a framework. Each capstan is capable of rotating the shaft. Shape memory wire, as two separate lengths of wire, is wrapped around each capstan to form a winding around that capstan. The winding on one capstan is so wrapped that the wire is in a prestretched state. The winding on the other capstan is so wrapped that the wire is in a taut, but not a prestretched, state. Heating one performs work in one direction, thus deforming the other one. When the other SMA is heated the action is reversed.

Brudnicki, Myron↗

Evaluation of Data Retention and Imprint Characteristics of FRAMs Under Environmental Stresses for NASA Applications

A major reliability issue for all advanced nonvolatile memory (NVM) technology devices including FRAMs is the data retention characteristics over extended period of time, under environmental stresses and exposure to total ionizing dose (TID) radiation effects. For this testing, 256 Kb FRAMs in 28-pin plastic DIPS, rated for industrial grade temperature range of -40 C to +85 C, were procured. These are two-transistor, two-capacitor (2T-2C) design FRAMs. In addition to data retention characteristics, the parts were also evaluated for imprint failures, which are defined as the failure of cells to change from a "preferred" state, where it has been for a significant period of time to an opposite state (e.g., from 1 to 0, or 0 to 1). These 256 K FRAMs were subjected to scanning acoustic microscopy (C-SAM); 1,000 temperature cycles from -65 C to +150 C; high temperature aging at 150 C, 175 C, and 200 C for 1,000 hours; highly accelerated stress test (HAST) for 500 hours; 1,000 hours of operational life test at 125 C; and total ionizing dose radiation testing. As a preconditioning, 10 K read/write cycles were performed on all devices. Interim electrical measurements were performed throughout this characterization, including special imprint testing and final electrical testing. Some failures were observed during high temperature aging test at 200 C, during HAST testing, and during 1,000 hours of operational life at 125 C. The parts passed 10 Krad exposure, but began showing power supply current increases during the dose increment from 10 Krad to 30 Krad, and at 40 Krad severe data retention and parametric failures were observed. Failures from various environmental group testing are currently being analyzed.

Sharma, Asbok K.↗

The Dynamics of the Atmospheric Radiation Environment at Aviation Altitudes

Single Event Effects vulnerability of on-board computers that regulate the: navigational, flight control, communication, and life support systems has become an issue in advanced modern aircraft, especially those that may be equipped with new technology devices in terabit memory banks (low voltage, nanometer feature size, gigabit integration). To address this concern, radiation spectrometers need to fly continually on a multitude of carriers over long periods of time so as to accumulate sufficient information that will broaden our understanding of the very dynamic and complex nature of the atmospheric radiation environment regarding: composition, spectral distribution, intensity, temporal variation, and spatial variation.

Stassinopoulos, Epaminondas G.↗

Structural Bus and Release Mechanisms on the ST5 Satellites: Summary and Status

The Space Technology 5 Mechanical System met the challenge of packaging a fully functional science and technology satellite system with its Deployer mechanism into a compact 0.07cu m volume. Three 25 kg satellites were orbited in constellation in March, 2006. The ST5 mechanical system is composed of 1) The Structural Bus; 2) Magnetometer Instrument Boom 3) Spacecraft Deployer Release Mechanism This system includes a highly integrated electronics enclosure as a multifunctional structure; a lightweight, magnetically clean Magnetometer Boom; the first use of Nitinol Shape-Memory Alloy trigger devices for deploying multiple spacecraft; an innovative compliant mount for the umbilical connector and a Deployer mechanism that imparts both separation velocity and mission spin rate to three constellation flying satellites These elements employed cutting-edge design and analysis tools, state-of-the-art testing facilities and proven engineering techniques to meet stringent performance criteria, enabling the mission s success.

Rossoni, Peter↗

Nanomaterials for Electronics and Optoelectronics

Nanomaterials such as carbon nanotubes(CNTs), graphene, and inorganic nanowires(INWs) have shown interesting electronic, mechanical, optical, thermal, and other properties and therefore have been pursued for a variety of applications by the nanotechnology community ranging from electronics to nanocomposites. While the first two are carbon-based materials, the INWs in the literature include silicon, germanium, III-V, II-VI, a variety of oxides, nitrides, antimonides and others. In this talk, first an overview of growth of these three classes of materials by CVD and PECVD will be presented along with results from characterization. Then applications in development of chemical sensors, biosensors, energy storage devices and novel memory architectures will be discussed.

Koehne, Jessica E.↗

Lessons Learned in the Flight Qualification of the S-NPP and NOAA-20 Solar Array Mechanisms

Deployable solar arrays are the energy source used on almost all Earth orbiting spacecraft and their release and deployment are mission-critical; fully testing them on the ground is a challenging endeavor. The 8 meter long deployable arrays flown on two sequential NASA weather satellites were each comprised of three rigid panels almost 2 meters wide. These large panels were deployed by hinges comprised of stacked constant force springs, eddy current dampers, and were restrained through launch by a set of four releasable hold-downs using shape memory alloy release devices. The ground qualification testing of such unwieldy deployable solar arrays, whose design was optimized for orbital operations, proved to be quite challenging and provides numerous lessons learned. A paperwork review and follow-up inspection after hardware storage determined that there were negative torque margins and missing lubricant, this paper will explain how these unexpected issues were overcome. The paper will also provide details on how the hinge subassemblies, the fully-assembled array, and mechanical ground support equipment were subsequently improved and qualified for a follow-on flight with considerably less difficulty. The solar arrays built by Ball Aerospace Corp. for the Suomi National Polar Partnership (S-NPP) satellite and the Joint Polar Satellite System (JPSS-1) satellite (now NOAA-20) were both successfully deployed on-obit and are performing well.

Helfrich, Daniel↗