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At least 415 records · Page 23

Spatial and Temporal Trends in Precambrian Nitrogen Cycling: A Mesoproterozoic Offshore Nitrate Minimum

Fixed nitrogen is an essential nutrient for eukaryotes. As N2 fixation and assimilation of nitrate are catalyzed by metalloenzymes, it has been hypothesized that in Mesoproterozoic oceans nitrate was limited in offshore environments by low trace metal concentrations and high rates of denitrification in anoxic and episodically euxinic deep water masses, restricting eukaryotes to near-shore environments and limiting their evolutionary innovation. To date this hypothesis has only been tested in the Belt Supergroup (∼1.4 Ga), with results that support an onshore-offshore nitrate gradient as a potential control on eukaryote ecology. Here we present bulk nitrogen and organic carbon isotopic data from non-isochronous cross-basinal facies across the Bangemall (∼1.5 Ga) and the Roper (∼1.4–1.5 Ga) basins to better understand the extent and variability of onshore-offshore nitrogen isotope gradients in the Mesoproterozoic. Both basins show an average ∼1-2‰ enrichment in δ-15N(sub bulk) from deep to shallow facies, with a maximum range from ~1‰ offshore to +7.5‰ onshore. Unlike the Belt basin, the Bangemall and Roper basins show some offshore δ-15N(sub bulk) values that are enriched beyond the isotopic range associated with biological N2 fixation alone. This suggests a mixture of aerobic and anaerobic metabolisms offshore. In shallow waters, where δ-15N(sub bulk) enrichment peaks, an aerobic nitrogen cycle was evidently operating. Even though isotopic signatures of aerobic nitrogen cycling are seen in all parts of the Bangemall and Roper basins, our data are consistent with a lateral gradient in nitrate availability within the photic zone, with higher concentrations in near-shore environments than offshore. The variability in δ-15N(sub bulk) values in each depositional environment and the consistently low δ-15N(sub bulk) values from Mesoproterozoic units compared to the Paleoproterozoic and Neoproterozoic suggest that nitrate concentrations in the global ocean were likely low. This trend is now seen in all three Mesoproterozoic basins so far examined, and contrasts with the Paleoproterozoic and Neoproterozoic where nearly all δ-15N(sub bulk) data plot above the N2 fixation window. Thus, we propose that the Mesoproterozoic ocean was characterized by a nitrate minimum, with the lowest concentrations in offshore environments. This inference is consistent with a Mesoproterozoic O2 decline following a temporary Paleoproterozoic O2 peak, and it further supports the idea that nitrate limitation offshore may have contributed to the restriction of photosynthetic eukaryotes to near-shore environments, delaying their rise to ecological dominance until the Neoproterozoic Era.

Mesoproterozoic↗

A persistently low level of atmospheric oxygen in Earth’s middle age

Resolving how Earth surface redox conditions evolved through the Proterozoic Eon is fundamental to understanding how biogeochemical cycles have changed through time. The redox sensitivity of cerium relative to other rare earth elements and its uptake in carbonate minerals make the Ce anomaly (Ce/Ce*) a particularly useful proxy for capturing redox conditions in the local marine environment. Here, we report Ce/Ce* data in marine carbonate rocks through 3.5 billion years of Earth’s history, focusing in particular on the mid-Proterozoic Eon (i.e., 1.8 – 0.8 Ga). To better understand the role of atmospheric oxygenation, we use Ce/ Ce* data to estimate the partial pressure of atmospheric oxygen (pO2) through this time. Our thermodynamics-based modeling supports a major rise in atmospheric oxygen level in the aftermath of the Great Oxidation Event (~ 2.4 Ga), followed by invariant pO2 of about 1% of present atmospheric level through most of the Proterozoic Eon (2.4 to 0.65 Ga).

Xiao-Ming Liu↗

Ga/1-x/Al/x/As LED structures grown on GaP substrates.

Ga(1-x)Al(x)As light-emitting diode structures have been grown on GaP substrates by the liquid-phase-epitaxial method. In spite of the large differences in lattice constants and thermal-expansion coefficients, room-temperature efficiencies up to 5.5% in air have been observed for a peak emission of 8500 A. Using undoped GaP substrates, which are transparent to the infrared and red portions of the spectrum, thin structures of Ga(1-x)Al(x)As with large external efficiencies can now be made.

Woodall, J. M.↗

Properties of superconducting Nb3Ga materials.

The superconducting-to-normal phase boundary was studied experimentally in several Nb-Ga materials as a function of applied field and superconducting transition temperature. When properly fabricated, the stoichiometric material Nb3Ga yields a superconducting transition temperature of 20.3 K, the highest yet reported for a binary alloy. Preliminary work shows that Nb-Ga materials with a superconducting transition temperature of 19 K can be made by chemical vapor deposition, a process commonly used for producing commercial superconducting tape.

Foner, S.↗

Mesosiderites. I - Compositions of their metallic portions and possible relationship to other metal-rich meteorite groups

The metal from 17 mesosiderites has been analyzed for Ni, Ga, Ge, and Ir by the techniques of atomic-absorption spectrometry and neutron activation. Most mesosiderite metal samples fall in a narrow compositional range: Ni, 7.0-9.0%; Ga, 13-16 ppm; Ge, 47-58 ppm; and Ir, 2.4-4.4 ppm. Most of those falling outside these ranges belong to Powell's (1971) least-metamorphosed type. Mesosiderite metal falls in the same general composition range as IIIAB irons, IIIE irons, pallasites and H-group chondrite metal. There are distinct differences in detail, however, and firm evidence for a close genetic relationship between any of these groups and the mesosiderites is lacking.

Wasson, J. T.↗

Experimental studies of flow separation and stalling on two-dimensional airfoils at low speeds. Phase 2: Studies with Fowler flap extended

Results were given on experimental studies of flow separation and stalling on a two-dimensional GA(W)-1 17 percent thick airfoil with an extended Fowler flap. Experimental velocity profiles obtained from a five tube probe survey with optimum flap gap and overlap setting (flap at 40 deg) are shown at various stations above, below, and behind the airfoil/flap combination for various angles of attack. The typical zones of steady flow, intermittent turbulence, and large scale turbulence were obtained from a hot wire anemometer survey and are depicted graphically for an angle of attack of 12.5 deg. Local skin friction distributions were obtained and are given for various angles of attack. Computer plots of the boundary layer profiles are shown for the case of the flap at 40 deg. Static pressure contours are also given. A GA(W)-2 section model was fabricated with 30 percent Fowler flaps and with pressure tabs.

Seetharam, H. C.↗

Transitions of Zn XXII, Zn XXIII, Zn XXIV, Ge XXIV, and Ge XXV observed in laser-produced plasmas

Wavelengths and wave numbers are presented for zinc lines in the F I, O I, and N I isoelectronic sequences as well as for germanium lines in the F I and O I sequences. The transitions are of the type 2s(2)2p(k)-2s2p(k+1), and the lines were observed near 100 A in the spectra of plasmas produced by focusing the pulse from a high-power glass laser on to solid targets of different elements and compounds. The results are compared with prediction based on extrapolations of semiempirical formulas derived by Edlen (1969). The wavelengths and wave numbers of some of the corresponding transitions in Cu XXI, Cu XXII, Cu XXIII, Ga XXIII, and Ga XXIV are interpolated with a probable wavelength accuracy of at least plus or minus 0.02 A.

Behring, W. E.↗

Development of a monolithic GaAs integrated optical transmitter

The paper discusses a program designed for the development of a GaAs IOC transmitter consisting of a monolithic surface laser whose output is coupled into patterned channel waveguides. Modulation and switching of the radiation occur in the waveguide circuit and are controlled separately. These structures are to be fabricated monolithically on a single semiconductor chip with each device amenable to integrated low-cost manufacture. The waveguide outputs of the IOC transmitter will be coupled to single mode optical fibers which form a transmission cable. The properties of the semiconductors (Ga,Al)As and (Ga,In)As permit performance of each of the basic functions included in the device considered. The concept of monolithic nondiscrete GaAs diode lasers is examined along with optical stripline channel waveguides and electro-optic channel waveguide modulators and switches.

Blum, F. A.↗

Basis for interpretation regarding the ages of the Serenitatis, Imbrium and Orientale events

One of the most important objectives of lunar study is to relate the lunar sample data to important lunar events. This paper utilizes as the basis of interpretation consideration of the following: (1) photogeologic data, (2) the choice of a cratering model, (3) estimates of temperature of impact ejecta and shock-induced heating, (4) petrologic data of lunar breccias and their thermal and shock history, and (5) meaningful age measurements. Both the author's interpretations and alternative views are discussed. The age of the Serenitatis event is not yet known. The interpreted age of the Imbrium event is between 3.90 and 3.84 Ga. The age of the Orientale event is 3.84 Ga.

Chao, E. C. T.↗

A computer analysis of heterojunction and graded composition solar cells

The development and application of a variable composition solar cell computer analysis program is discussed. The basic device equations are derived and results of the computer analysis of several Al(x)Ga(1-x)As and GaAs(1-x)P(x) solar cell structures are presented along with a discussion of the effects of interface states and various composition and doping profiles on maximum solar cell efficiency. Interface states are found to be responsible for a severe reduction in the efficiency of GaAs(1-x)P(x) cells, but do not significantly affect the behavior of Al(x)Ga(1-x)As cells. The depth of the p-n junction below the wide bandgap window layer is a critical factor in determining the loss of minority carriers to interface recombination at the heterojunction.

Sutherland, J. E.↗

In-flight measurements of the GA/W/-2 aerodynamic characteristics

Flight tests of a new 13% General Aviation Airfoil - the GA(W)-2 - gloved full span onto the existing wing of a Beech Sundowner have generated chordwise pressure distributions and wake surveys. Section lift, drag and moment coefficients derived from these measurements verify wind tunnel data and theory predicting the performance of this airfoil. The effect of steps, rivets and surface coatings upon the drag of the GA(W)-2 was also evaluated.

Gregorek, G. M.↗

The 1.1 micrometer and visible emission semiconductor diode lasers

In (AlGa)As, the first of three alloy systems studied, Continuous Wave (CW) operation was obtained at room temperature at a wavelength as low as 7260 A. Reliability in this system was studied in the incoherent mode. Zinc doped devices had significant degradation, whereas Ge or Ge plus Zi doped devices had none. The Al2O3 facet coatings were shown to significantly reduce facet deterioration in all types of lasers, longer wavelength units of that type having accumulated (at the time of writing) 22,000 hours with little if any degradation. A CL study of thin (AlGa)As layers revealed micro fluctuation in composition. A macro-scale fluctuation was observed by electroreflectance. An experimental and theoretical study of the effect of stripe width on the threshold current was carried out. Emission below 7000 A was obtained in VPE grown Ga(AsP) (In,Ga)P with CW operation at 10 C. Lasers and LED's were made by LPE in (InGa) (AsP). Laser thresholds of 5 kA/cm2 were obtained, while LED efficiences were on the order of 2%. Incoherent life test over 6000 hours showed no degradation.

Ladany, I.↗

Accelerated step-temperature aging of Al/x/Ga/1-x/As heterojunction laser diodes

Double-heterojunction A2(0.3)Ga(0.7)As/Al(0.08)Ga(0.92)As lasers (oxide-striped and Al2O3 facet coated) were subjected to step-temperature aging from 60 to 100 C. The change in threshold current and spontaneous output was monitored at 22 C. The average time required for a 20% pulsed threshold current increase ranges from about 500 h, when operating at 100 C, to about 5000 h at a 70 C ambience. At 22 C, the extrapolated time is about 1 million h. The time needed for a 50% spontaneous emission reduction is of the same order of magnitude. The resulting activation energies are approximately 0.95 eV for laser degradation and approximately 1.1 eV for the spontaneous output decrease

Kressel, H.↗

Tests of low background photo conductors

In support of two infrared astronomy space projects, the IRAS satellite and the IRT on Spacelab 2, low-background tests were carried out on the performance and characterization of Si:Ga, Si:As, Si:Sb and Ge:Ga photoconductive detectors. These test results represent a useful appraisal of this family of detectors when operated at 1.8-4.2 K and at background power levels of 10 to the -14th to 10 to the -13th W. In addition to detector performance data, results are also presented on cryogenically cooled MOSFET amplifiers operated in the source follower and in the balanced-dc-TIA configurations.

Young, E. T.↗

A 163 micron laser heterodyne radiometer for OH

A 163 micron (1.836 THz) radiometer developed for airplane and/or balloon platforms is described. The laser local oscillator is a CO2 pumped methanol laser operating at a frequency which is approx. 1 GHz from the J = 3/2 - 1/2 transition of OH. The laser is used directly as a local oscillator or is translated in frequency to closer coincidence with the OH emission, depending on achieved detector IF bandwidth. Frequency translation techniques which are described are diode mixing and a method of single sideband generation using an external Stark modulated gas cell. The photoconductive mixer used is a strained Ge crystal, doped with Ga, originally used as an incoherent detector. The uniaxial strain on the Ga doped Ge crystal shifts the threshold for photoconduction from 100/cm to frequencies as low as 50/cm. These detectors are currently being characterized as mixers in the laboratory. Of particular interest are the effect of local oscillator power and strain on IF, bandwidth detector impedance, and conversion loss. Preliminary results of these tests are described and compared with theorectical expectations.

Pickett, H. M.↗