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Provided is a spintronics device. The spintronics can include a ferromagnetic metal layer, a positive electrode disposed on a first surface portion of the ferromagnetic metal layer, and a negative electrode disposed on a second surface portion of the ferromagnetic metal.
A frequency conversion device, which may include a radiofrequency (RF) mixer device, includes a substrate and a ferromagnetic film disposed over a surface of the substrate. An insulator is disposed over the ferromagnetic film and at least one microstrip antenna is disposed over the insulator. The ferromagnetic film provides a non-linear response to the frequency conversion device. The frequency conversion device may be used for signal mixing and amplification. The frequency conversion device may also be used in data encryption applications.
Ferromagnetic insulators (FMIs) are one of the most important components in developing dissipationless electronic and spintronic devices. However, FMIs are innately rare to find in nature as ferromagnetism generally accompanies metallicity. Here, novel room–temperature FMI films that are epitaxially synthesized by deliberate control of the ratio between two B–site cations in the double perovskite Sr 2 Fe 1+x Re 1–x O 6 (–0.2 ≤ x ≤ 0.2) are reported. In contrast to the known FM metallic phase in stoichiometric Sr2FeReO6, an FMI state with a high Curie temperature ( T c ≈ 400 K) and a large saturation magnetization ( M S ≈ 1.8 µB f.u. –1 ) is found in highly cation–ordered Fe–rich phases. The stabilization of the FMI state is attributed to the formation of extra Fe 3+ –Fe 3+ and Fe 3+ –Re 6+ bonding states, which originate from the relatively excess Fe ions owing to the deficiency in Re ions. As a result, the emerging FMI state created by controlling cations in the oxide double perovskites opens the door to developing novel oxide quantum materials and spintronic devices.
We have presented here the consequences of the non-uniform exchange field on the spin transport issues in spin chiral configuration of ferromagnetic graphene. Taking resort to the spin–orbit coupling (SOC) term and non-uniform exchange coupling term we are successful to express the expression of Hall conductivity in terms of the exchange field and SOC parameters through the Kubo formula approach. However, for a specific configuration of the exchange parameter we have evaluated the Berry curvature of the system. We also have paid attention to the study of SU(2) gauge theory of ferromagnetic graphene. The generation of anti damping spin–orbit torque in spin chiral magnetic graphene is also briefly discussed.
Superlattices consist of two ferromagnets La{sub 0.7}Sr{sub 0.3}MnO{sub 3} (LSMO) and SrRuO{sub 3} (SRO) were grown in (110)-orientation on SrTiO{sub 3} (STO) substrates. The x-ray diffraction and Raman spectra of these superlattices show the presence of in-plane compressive strain and orthorhombic structure of less than 4 u.c. thick LSMO spacer, respectively. Magnetic measurements reveal several features including reduced magnetization, enhanced coercivity, antiferromagnetic coupling, and switching from antiferromagnetic to ferromagnetic coupling with magnetic field orientations. These magnetic properties are explained by the observed orthorhombic structure of spacer LSMO in Raman scattering which occurs due to the modification in the stereochemistry of Mn at the interfaces of SRO and LSMO.
We present an investigation on the magnetic properties of Py/Ru/FeCo/IrMn spin valves grown by dc magnetron sputtering. The sample fabrication setup has two important features, (i) the five magnetron sputtering sources are placed in a cluster flange 72° from each other, and (ii) each source is tilted with respect to the sample normal. In-plane angular dependence of the ferromagnetic resonance (FMR) was used to obtain the relevant magnetic anisotropies, such as uniaxial and exchange bias fields. The oblique deposition geometry employed has induced non-collinear easy axes of the two ferromagnetic (FM) layers, with high uniaxial field strengths. The symmetry shift of the angular dependence of the FMR resonances of the two FM layers gives us directly the angle between the easy axes of FM{sub 1} (Py) and FM{sub 2} (FeCo), which turned out to be the angle between two adjacent sputtering sources. The observations of the present study suggest that, by combining oblique deposition and appropriate angles of incidence of the deposition flux, the uniaxial (and unidirectional) axes of individual FM layers can be precisely engineered in spin valve fabrication.
We observe a dc voltage peak at ferromagnetic resonance (FMR) in samples consisting of a single ferromagnetic (FM) layer grown epitaxially on the n-GaAs (001) surface. The FMR peak is detected as an interfacial voltage with a symmetric line shape and is present in samples based on various FM/n-GaAs heterostructures, including Co{sub 2}MnSi/n-GaAs, Co{sub 2}FeSi/n-GaAs, and Fe/n-GaAs. We show that the interface bias voltage dependence of the FMR signal is identical to that of the tunneling anisotropic magnetoresistance (TAMR) over most of the bias range. Furthermore, we show how the precessing magnetization yields a dc FMR signal through the TAMR effect and how the TAMR phenomenon can be used to predict the angular dependence of the FMR signal. This TAMR-induced FMR peak can be observed under conditions where no spin accumulation is present and no spin-polarized current flows in the semiconductor.
We study coupled ferromagnetic layers, which could facilitate low loss, sub 100 nm wavelength spin-wave propagation and manipulation. One of the layers is a low-loss garnet film (such as yttrium iron garnet (YIG)) that enables long-distance, coherent spin-wave propagation. The other layer is made of metal-based (Permalloy, Co, and CoFe) magnetoelectronic structures that can be used to generate, manipulate, and detect the spin waves. Using micromagnetic simulations, we analyze the interactions between the spin waves in the YIG and the metallic nanomagnet structures and demonstrate the components of a scalable spin-wave based signal processing device. We argue that such hybrid-metallic ferromagnet structures can be the basis of potentially high-performance, ultra low-power computing devices.
Neutron powder diffraction confirms that the primary ordering mode in Eu{sub 4}PdMg is ferromagnetic with a europium moment of 6.5(2) μ{sub B}. {sup 151}Eu Mössbauer spectroscopy shows that the unusual linear temperature dependence of the magnetisation reported for this system is an intrinsic property and not an artefact of the applied field. The form and temperature evolution of the {sup 151}Eu Mössbauer spectra strongly suggest that there is an incommensurate modulation to the magnetic structure that modifies the basic ferromagnetic order. This modulated structure may be the origin of the broad magnetocaloric response previously observed in Eu{sub 4}PdMg.
The phase transformation and magnetostriction of bulk Fe{sub 73}Ga{sub 27} and Fe{sub 73}Ga{sub 18}Zn{sub 9} (at. %) ferromagnetic shape memory alloys (FSMs) were investigated by transmission electron microscopy (TEM), x-ray diffraction (XRD), and a magnetostrictive-meter setup. For the Fe{sub 73}Ga{sub 27} FSM alloy solution treated at 1100 °C for 4 h and quenched in ice brine, the antiphase boundary segments of the D0{sub 3} domain were observed in the A2 (disordered) matrix, and the Fe{sub 73}Ga{sub 27} FSM alloy had an optimal magnetostriction (λ{sub ‖}{sup s }= 71 × 10{sup −6} and λ{sub ⊥}{sup s }= −31 × 10{sup −6}). In Fe{sub 73}Ga{sub 27} FSM alloy as-quenched, aged at 700 °C for 24 h, and furnace cooled, D0{sub 3} nanoclusters underwent phase transformation to an intermediate tetragonal phase (i.e., L1{sub 0}-like martensite) via Bain distortion, and finally L1{sub 2} (Fe{sub 3}Ga) structures precipitated, as observed by TEM and XRD. The L1{sub 0}-like martensite and L1{sub 2} phases in the aged Fe{sub 73}Ga{sub 27} FSM alloy drastically decreased the magnetostriction from positive to negative (λ{sub ‖}{sup s }= −20 × 10{sup −6} and λ{sub ⊥}{sup s }= −8 × 10{sup −6}). However, in Fe{sub 73}Ga{sub 18}Zn{sub 9} FSM alloy as-quenched and aged, the phase transformation of D0{sub 3} to an intermediate tetragonal martensite phase and precipitation of L1{sub 2} structures were not found. The results indicate that the aged Fe{sub 73}Ga{sub 18}Zn{sub 9} FSM alloy maintained stable magnetostriction (λ{sub ‖}{sup s }= 36 × 10{sup −6} and λ{sub ⊥}{sup s }= −31 × 10{sup −6}). Adding Zn can improve the ferromagnetic shape memory effect of aged Fe{sub 73}Ga{sub 18}Zn{sub 9} alloy, which may be useful in application of the alloy in high temperature environments.
First five harmonics of the ac magnetic response were measuredas functions of temperature at different frequencies and with or without superposed dc magnetic field on Cr{sub 70}Fe{sub 30} thin films. An elaborate analysis of the linear susceptibility data reveals that (i) a well-defined paramagnetic (PM) to ferromagnetic (FM) phase transition, characterized by three-dimensional Heisenberg critical exponents, occurs for film thickness down to t≃ 90 nm, and (ii) the film with t≃40 nm exhibits experimental signatures in the critical region that are characteristic of both ferromagnets and spin glasses while the spin glass behavior dominates the FM one when t≃ 20 nm.
We report the influence of magnetic field on I-V characteristics of α-Fe{sub 1.64}Ga{sub 0.36}O{sub 3} sample. Synchrotron X-ray diffraction pattern and Raman Spectroscopy have confirmed rhombohedral structure with space group R3C in the sample. The sample exhibits ferromagnetic feature at room temperature and non saturation of magnetization up to 7Tesla suggests the effect of non-collinear structure (canting) of the spins on the ferromagnetic properties. We have recorded I-V characteristics of the sample under magnetic field to study the effect of non-collinear spin structure on the electrical properties. Space charge limited current mechanism controlled the nature of non-linear I-V curves and the curves are significantly affected by magnetic field.
We determined the spin-transport properties of Pd and Pt thin films by measuring the increase in ferromagnetic resonance damping due to spin-pumping in ferromagnetic (FM)-nonferromagnetic metal (NM) multilayers with varying NM thicknesses. The increase in damping with NM thickness depends strongly on both the spin- and charge-transport properties of the NM, as modeled by diffusion equations that include both momentum- and spin-scattering parameters. We use the analytical solution to the spin-diffusion equations to obtain spin-diffusion lengths for Pt and Pd. By measuring the dependence of conductivity on NM thickness, we correlate the charge- and spin-transport parameters, and validate the applicability of various models for momentum-scattering and spin-scattering rates in these systems: constant, inverse-proportional (Dyakanov-Perel), and linear-proportional (Elliot-Yafet). We confirm previous reports that the spin-scattering time appears to be shorter than the momentum scattering time in Pt, and the Dyakanov-Perel-like model is the best fit to the data.
Perpendicular magnetic anisotropy (PMA) and low magnetic damping are the key factors for the free layer magnetization switching by spin transfer torque technique in magnetic tunnel junction devices. The magnetization precessional dynamics in soft ferromagnetic FeTaC thin film with a stripe domain structure was explored in broad band frequency range by employing micro-strip ferromagnetic resonance technique. The polar angle variation of resonance field and linewidth at different frequencies have been analyzed numerically using Landau-Lifshitz-Gilbert equation by taking into account the total free energy density of the film. The numerically estimated parameters Landé g-factor, PMA constant, and effective magnetization are found to be 2.1, 2 × 10{sup 5} erg/cm{sup 3} and 7145 Oe, respectively. The frequency dependence of Gilbert damping parameter (α) is evaluated by considering both intrinsic and extrinsic effects into the total linewidth analysis. The value of α is found to be 0.006 at 10 GHz and it increases monotonically with decreasing precessional frequency.
For this, partially aligned nickel nanocubes were grown epitaxially in a diamagnetic magnesium oxide (MgO:Ni) host and studied by a continuous wave ferromagnetic resonance (FMR) spectroscopy at the X-band (9.5 GHz) from ca. 117 to 458 K and then at room temperature for multiple external magnetic fields/resonant frequencies from 9.5 to 330 GHz. In contrast to conventional magnetic susceptibility studies that provided data on the bulk magnetization, the FMR spectra revealed the presence of three different types of magnetic Ni nanocubes in the sample. Specifically, three different ferromagnetic resonances were observed in the X-band spectra: a line 1 assigned to large nickel nanocubes, a line 2 corresponding to the nanocubes exhibiting saturated magnetization even at ca. 0.3 T field, and a high field line 3 (g eff ~ 6.2) tentatively assigned to small nickel nanocubes likely having their hard magnetization axis aligned along or close to the direction of the external magnetic field. Based on the analysis of FMR data, the latter nanocubes possess an anisotropic internal magnetic field of at least ~1.0 T in magnitude.
Moiré materials are artificial crystals formed at van der Waals heterojunctions that have emerged as a highly tunable platform that is able to realize much of the rich quantum physics of electrons in atomic scale solids, and in several cases even new quantum phases of matter. Here we use finite-size exact diagonalization methods to explore the physics of single-band itinerant electron ferromagnetism in semiconductor moiré materials. As a result, we predict where ferromagnetism is likely to occur in triangular-lattice moiré systems, and where it is likely to yield the highest Curie temperatures.
An insulating ferromagnetic (FM) phase exists in the quasi-one-dimensional iron oxychalcogenide Ce 2 O 2 FeSe 2 , but its origin is unknown. To understand the FM mechanism, here a systematic investigation of this material is provided, analyzing the competition between ferromagnetic and antiferromagnetic tendencies and the interplay of hoppings, Coulomb interactions, Hund’s coupling, and crystal-field splittings. Overall, our intuitive analysis based on second-order perturbation theory shows that large entanglements between doubly occupied and half filled orbitals play a key role in stabilizing the FM order in Ce 2 O 2 FeSe 2 . In addition, via many-body computational techniques applied to a multiorbital Hubbard model, the phase diagram confirms the proposed FM mechanism.
Epitaxial strain provides important pathways to control the magnetic and electronic states in transition-metal oxides. However, the large strain is usually accompanied by a strong reduction of the oxygen-vacancy formation energy, which hinders the direct manipulation of their intrinsic properties. Here, using a postdeposition ozone annealing method, we obtain a series of oxygen stoichiometric SrCoO 3 thin films with the tensile strain up to 3.0%. We observe a robust ferromagnetic ground state in all strained thin films, while interestingly the tensile strain triggers a distinct metal-to-insulator transition along with the increase of the tensile strain. The persistent ferromagnetic state across the electrical transition therefore suggests that the magnetic state is directly correlated with the localized electrons, rather than the itinerant ones, which then calls for further investigation of the intrinsic mechanism of this magnetic compound beyond the double-exchange mechanism.