Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Electrical breakdown”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 415 records · Page 23
All sourcesNASA NTRSDOE OSTI
NASA NTRS1995

Circular Metal/Semiconductor/Metal Photodetectors

Metal/semiconductor/metal (MSM) photodetectors with multiple concentric circular electrodes developed. Some electrical characteristics expected superior to those of older MSM photodetectors containing interdigitated straight electrodes. Response times smaller and shorter, and breakdown voltages larger. Decrease in capacitance allows greater signal-detection bandwidth. Important advantage in fiber-optic telecommunication systems, in which photodectors central components in receiver circuits. Increasing bandwidth of such photodetector enables receiver to handle larger number of channels or increased information rate in each channel.

Mcadoo, James A.↗
DOE OSTI2022

Record >10 MV/cm mesa breakdown fields in Al 0.85 Ga 0.15 N/Al 0.6 Ga 0.4 N high electron mobility transistors on native AlN substrates

The ultra-wide bandgap of Al-rich AlGaN is expected to support a significantly larger breakdown field compared to GaN, but the reported performance thus far has been limited by the use of foreign substrates. In this Letter, the material and electrical properties of Al 0.85 Ga 0.15 N/Al 0.6 Ga 0.4 N high electron mobility transistors (HEMT) grown on a 2-in. single crystal AlN substrate are investigated, and it is demonstrated that native AlN substrates unlock the potential for Al-rich AlGaN to sustain large fields in such devices. We further study how Ohmic contacts made directly to a Si-doped channel layer reduce the knee voltage and increase the output current density. High-quality AlGaN growth is confirmed via scanning transmission electron microscopy, which also reveals the absence of metal penetration at the Ohmic contact interface and is in contrast to established GaN HEMT technology. Two-terminal mesa breakdown characteristics with 1.3 μm separation possess a record-high breakdown field strength of ~11.5 MV/cm for an undoped Al 0.6 Ga 0.4 N-channel layer. The breakdown voltages for three-terminal devices measured with gate-drain distances of 4 and 9 μm are 850 and 1500 V, respectively.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1984

Particle transport in planetary magnetospheres

Particle energization in Earth's and Jupiter's magnetospheres is discussed. Understanding of the large scale magnetic and electric fields in which charged particles move is reviewed. Orbit theory in the adiabatic approximation is sketched. General conditions for adiabatic breakdown at each of three levels of periodicity are presented. High energy losses and lower energy sources argue for the existence of magnetospheric accelerations. Nonadiabatic acceleration processes are mentioned. Slow diffusive energization by particle interactions with electromagnetic fluctuations is outlined. This mechanism seems adequate at Earth but, operating alone, is unconvincing for Jupiter. Adding spatial diffusion in the radially distended Jovian magnetodisk may resolve the difficulty.

Birmingham, T. J.↗
NASA NTRS1988

Laser production and heating of plasma for MHD application

Experiments have been made on the production and heating of plasmas by the absorption of laser radiation. These experiments were performed to ascertain the feasibility of using laser-produced or laser-heated plasmas as the input for a magnetohydrodynamic (MHD) generator. Such a system would have a broad application as a laser-to-electricity energy converter for space power transmission. Experiments with a 100-J-pulsed CO2 laser were conducted to investigate the breakdown of argon gas by a high-intensity laser beam, the parameters (electron density and temperature) of the plasma produced, and the formation and propagation of laser-supported detonation (LSD) waves. Experiments were also carried out using a 1-J-pulsed CO2 laser to heat the plasma produced in a shock tube. The shock-tube hydrogen plasma reached electron densities of approximately 10 to the 17th/cu cm and electron temperatures of approximately 1 eV. Absorption of the CO2 laser beam by the plasma was measured, and up to approximately 100 percent absorption was observed. Measurements with a small MHD generator showed that the energy extraction efficiency could be very large with values up to 56 percent being measured.

Jalufka, N. W.↗
NASA NTRS1992

Evaluation of high temperature capacitor dielectrics

Experiments were carried out to evaluate four candidate materials for high temperature capacitor dielectric applications. The materials investigated were polybenzimidazole polymer and three aramid papers: Voltex 450, Nomex 410, and Nomex M 418, an aramid paper containing 50 percent mica. The samples were heat treated for six hours at 60 C and the direct current and 60 Hz alternating current breakdown voltages of both dry and impregnated samples were obtained in a temperature range of 20 to 250 C. The samples were also characterized in terms of their dielectric constant, dielectric loss, and conductivity over this temperature range with an electrical stress of 60 Hz, 50 V/mil present. Additional measurements are underway to determine the volume resistivity, thermal shrinkage, and weight loss of the materials. Preliminary data indicate that the heat treatment of the films slightly improves the dielectric properties with no influence on their breakdown behavior. Impregnation of the samples leads to significant increases in both alternating and direct current breakdown strength. The results are discussed and conclusions made concerning their suitability as high temperature capacitor dielectrics.

Hammoud, Ahmad N.↗
NASA NTRS1992

High temperature dielectric properties of Apical, Kapton, Peek, Teflon AF, and Upilex polymers

Reliable lightweight systems capable of providing electrical power at the magawatt level are a requirement for future manned space exploration missions. This can be achieved by the development of high temperature insulating materials which are not only capable of surviving the hostile space environment but can contribute to reducing the mass and weight of the heat rejection system. In this work, Apical, Upilex, Kapton, Teflon AF, and Peek polymers are characterized for AC and DC dielectric breakdown in air and in silicone oil at temperatures up to 250 C. The materials are also tested in terms of their dielectric constant and dissipation factor at high temperatures with an electrical stress of 60 Hz, 200 V/mil present. The effects of thermal aging on the properties of the films are determined after 15 hours of exposure to 200 and 250 C, each. The results obtained are discussed and conclusions are made concerning the suitability of these dielectrics for use in capacitors and cable insulations in high temperature environments.

Hammoud, A. N.↗
DOE OSTI2021

Large area vertical Ga 2 O 3 Schottky diodes for X-ray detection

In this work, the Schottky barrier diodes were fabricated from a bulk Sn-doped (001) n-type Ga 2 O 3 substrate with a Si-doped epitaxial layer grown by hydride vapor phase epitaxy (HVPE), which demonstrate a good response to X-rays. Circular metal contacts with diameters ranging from 50 to 1500 um and square metal contacts ranging from 100 X 100 to 1600 X 1600 um 2 were deposited on the wafer. The devices were characterized for their electrical performance including forward current–voltage (FIV), reverse current–voltage (RIV), and capacitance-voltage (CV) measurements. The best device showed a breakdown voltage of –804 V and the devices tested had an average ideality of 1.12. The devices exhibited a clear response to X-rays even at zero bias with an experimentally observed response time 1.03 s and a linear response of detector signal to the X-ray dose rate. The experimentally observed device response time improved to 0.25 s when bias voltage is applied. The device also survived a long-term stability test of over 2 h under a constant X-ray irradiation. The sensitivity and the lower limit of detection for X-ray by Ga2O3 epitaxial Schottky detectors were discussed and determined as 43.5 C/mGy cm –2 at –200 V and 8.31 nGy Air /s, respectively.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

A Comparison of Emerging and Industry Benchmark Photovoltaic Backsheets Between Different Outdoor Locations

Recent interest within the photovoltaic (PV) module industry is largely directed toward enhanced lifetimes in the field, balanced with improved recyclability. Traditionally, fluoropolymer-based backsheets have been used, however, are difficult to recycle. Emerging polyolefin (PO)-based backsheets are more recyclable and can be formulated to be robust. Properties of different fluoropolymer- and non-fluoropolymer-based backsheet coupons and in encapsulated silicon mini modules that have been fielded in Albuquerque, NM and Cocoa, FL are reported here. Seven backsheets were examined: two novel PO's, TPT, APO, PPE, AAA, and KPf. Methods of examination include module electrical performance (I - V flash test), surface morphology (optical microscope and gloss), polymer chemical structure (FTIR), EL imaging, mechanical tensile testing, DC breakdown voltage, DSC (phase transitions), and optical performance (reflectance spectra).

industries↗
DOE OSTI2020

Field emission microscopy of carbon nanotube fibers: Evaluating and interpreting spatial emission

In this work, the authors quantify field emission properties of cathodes made from carbon nanotube (CNT) fibers. The cathodes were arranged in different configurations to determine the effect of cathode geometry on the emission properties. Various geometries were investigated including (1) flat cut fiber tip, (2) folded fiber, (3) looped fiber, and (4) fibers wound around a cylinder. The authors employ a custom field emission microscope to quantify I-V characteristics in combination with laterally resolved field-dependent electron emission area. Additionally, they look at the very early emission stages, first when a CNT fiber is turned on for the first time, which is then followed by multiple ramp-up/down runs. Upon the first turn on, all fibers demonstrated limited and discrete emission area. During ramping runs, all CNT fibers underwent multiple (minor and/or major) breakdowns, which improved emission properties in that turn-on field decreased and field enhancement factor and emission area both increased. It is proposed that breakdowns are responsible for removing initially undesirable emission sites caused by stray fibers higher than average. This initial breakdown process gives way to a larger emission area that is created when the CNT fiber subcomponents unfold and align with the electric field. Overall, the authors' results form the basis for careful evaluation of CNT fiber cathodes for dc or low frequency pulsed power systems in which large uniform area emission is required or for narrow beam high frequency applications in which high brightness is a must.

Image processing↗
NASA NTRSDate not supplied

Space Charge Analysis Capabilities for the Evaluation of High Voltage Insulation Materials

Materials development is crucial for the advancement of electric aviation. Current research focusing on novel multifunctional materials is underway to solve the needs for aerospace systems; however, additional testing of these materials to understand their failure modes is equally critical. This project will utilize pulsed electroacoustic (PEA) instrumentation to investigate space charge accumulation of multifunctional composites and other insulation materials critical to robust high power transmission systems. Evaluating the space charge phenomena in dielectric materials will provide unique and fundamentally necessary data to determine the feasibility and lifetime of any high voltage insulation system. When electrical charge is injected into a solid dielectric, charge can accumulate and become trapped, leading to the failure of the insulation via breakdown or arcing events. This study will discuss the pulsed electroacoustic methodology and its use on evaluating various dielectric polymer and composite films.

pulsed electroacoustic↗
DOE OSTI2024

A simplified all-frequency stable formulation with an implicit Coulomb gauge

A potential-based finite element formulation has been developed in the past to circumvent the low-frequency breakdown issues commonly encountered in electromagnetic (EM) simulations of low-frequency and multiscale problems. In this formulation, the magnetic vector and electric scalar potentials have been employed to express the electric field and magnetic flux, leading to a set of two equations that represents all four Maxwell’s equations and the current continuity equation. To enforce the Coulomb gauge, an auxiliary potential has been introduced, which results in a total of three equations to be solved simultaneously. To reduce the number of equations and unknowns needed in a simulation, a simplified formulation is proposed in this paper to enforce the Coulomb gauge implicitly without the need for the auxiliary potential. A numerical example is given to demonstrate the accuracy of the proposed formulation.

Mekonnen, Minyechil↗
NASA NTRS1999

Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (<250 V) 4H-SiC p+n Junction Diodes - Part 1: DC Properties

Given the high density (approx. 10(exp 4)/sq cm) of elementary screw dislocations (Burgers vector = lc with no hollow core) in commercial SiC wafers and epilayers, all appreciable current (greater than 1 A) SiC power devices will likely contain elementary screw dislocations for the foreseeable future. It is therefore important to ascertain the electrical impact of these defects, particularly in high-field vertical power device topologies where SiC is expected to enable large performance improvements in solid-state high-power systems. This paper compares the DC-measured reverse-breakdown characteristics of low-voltage (less than 250 V) small-area (less than 5 x 10(exp -4) sq cm) 4H-SiC p(+)n diodes with and without elementary screw dislocations. Compared to screw dislocation-free devices, diodes containing elementary screw dislocations exhibited higher pre-breakdown reverse leakage currents, softer reverse breakdown I-V knees, and highly localized microplasmic breakdown current filaments. The observed localized 4H-SiC breakdown parallels microplasmic breakdowns observed in silicon and other semiconductors, in which space-charge effects limit current conduction through the local microplasma as reverse bias is increased.

Neudeck, Philip G.↗
NASA NTRS1998

Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (less than 250 V) 4H-SiC p(+)n Junction diodes: DC Properties - Part 1

Given the high density (approx. 10(exp 4)/sq cm) of elementary screw dislocations (Burgers vector = 1c with no hollow core) in commercial SiC wafers and epilayers, all appreciable current (greater than 1 A) SiC power devices will likely contain elementary screw dislocations for the foreseeable future. It is therefore important to ascertain the electrical impact of these defects, particularly in high-field vertical power device topologies where SiC is expected to enable large performance improvements in solid-state high-power systems. This paper compares the DC-measured reverse-breakdown characteristics of low-voltage (less than 250 V) small-area (less than 5 x 10(exp -4)/sq cm) 4H-SiC p(+)n diodes with and without elementary screw dislocations. Compared to screw dislocation-free devices, diodes containing elementary screw dislocations exhibited higher pre-breakdown reverse leakage currents, softer reverse breakdown I-V knees, and highly localized microplasmic breakdown current filaments. The observed localized 4H-SiC breakdown parallels microplasmic breakdowns observed in silicon and other semiconductors, in which space-charge effects limit current conduction through the local microplasma as reverse bias is increased.

Neudeck, Philip G.↗
NASA NTRS2018

Nature-Inspired Motivation for Developing Self-Healable Electrical Insulation

Polymeric aircraft electrical insulation normally degrade by partial discharge with increasing voltage, which causes excessive localized Joule heating in the material and ultimately leads to dielectric failure of the insulator through thermal breakdown. Self-healing insulation may be a viable option to mitigate permanent mechanical degradation, thus increasing the longevity of the material. Instead of relying on catalyst and monomer-filled microcapsules to crack, flow, and cure at the damaged sites described in well-published mechanisms, self-healing through establishment of ionic crosslinks allows for multiple healing events to occur as well as achieving full recovery strength under certain thermal environments. Surlyn®, a commercial ionically-crosslinked material, was investigated as a self-healing insulation candidate based on prior demonstrations of self-healing behavior. Thin films of varying thicknesses were investigated and the effects of thickness on the dielectric strength were evaluated and compared to representative polymer insulators. The effects of thermal conditioning on the recovery strength and healing were observed as a function of time following dielectric breakdown. Moisture absorption was studied to determine if moisture absorption rates in Surlyn® were lower than that of common polyimide insulators. Preliminary data showed that when cut, Surlyn® films lost nearly 60 percent of its original dielectric strength. However, when Surlyn® was cut and subsequently annealed, the films not only re-mended, but also recouped approximately 93 percent of its original dielectric strength, along with 90-97 percent of its mechanical strength.

electrical↗
NASA NTRS1982

Model calculations of lightning electric fields

Calculated time-domain waveforms and frequency spectra are presented for three of the most important processes in a lightning discharge to ground: the return stroke, the stepped leader, and the preliminary breakdown. For each of these processes, the model calculations are given for 200 m and 50 km. The calculations are compared with available time and frequency domain measurements.

Master, M. J.↗
NASA NTRS1970

Research on variable threshold transistor storage systems

A fully integrated, electrically alterable, nonvolatile, nondestructive readout control memory was developed, using as storage elements metal-nitride-silicon variable threshold transistors. An optimum approach to such a memory was developed in which a three dimensional selection technique was used, both for read and write operations. Electrical isolation of writing and memory circuits was obtained by means of separate memory and write circuit chips. This method provided protection from voltage breakdowns, increased circuit flexibility, and greater ease of testing of interim and final circuit elements.

Wegener, H. A. R.↗
NASA NTRS2000

Transverse Magnetic Field Propellant Isolator

An alternative high voltage isolator for electric propulsion and ground-based ion source applications has been designed and tested. This design employs a transverse magnetic field that increases the breakdown voltage. The design can greatly enhance the operating range of laboratory isolators used for high voltage applications.

Foster, John E.↗