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At least 415 records · Page 23

BFS Method for Alloys Optimized and Verified for the Study of Ordered Intermetallic Material

The aerospace industry has a need for new metallic alloys that are lightweight and have high strength at elevated temperatures. The BFS (Bozzolo, Ferrante, and Smith) method is a new, computationally efficient and physically sound quantum semi-perturbative approach for describing metals and their defects. Based on a simple interpretation of the alloy formation process that identifies strain and chemical contributions to the energy of the alloy, the method provides an atom-by-atom description of an alloy. Its implementation requires little more than algebra and the solution of transcendental equations. At the NASA Lewis Research Center, we have demonstrated that BFS can investigate the properties of a large number of alloys with a minimum computational effort on low-level computers. This screening allows the selection of the best alloy candidates for a particular application and, therefore, promises large cost savings over current approaches.

Source record↗

Ab initio Computations of the Electronic, Mechanical, and Thermal Properties of Ultra High Temperature Ceramics (UHTC) ZrB2 and HfB2

Refractory materials such as metallic borides, often considered as ultra high temperature ceramics (UHTC), are characterized by high melting point, high hardness, and good chemical inertness. These materials have many applications which require high temperature materials that can operate with no or limited oxidation. Ab initio, first principles methods are the most accurate modeling approaches available and represent a parameter free description of the material based on the quantum mechanical equations. Using these methods, many of the intrinsic properties of these material can be obtained. We performed ab initio calculations based on density functional theory for the UHTC materials ZrB2 and HfB2. Computational results are presented for structural information (lattice constants, bond lengths, etc), electronic structure (bonding motifs, densities of states, band structure, etc), thermal quantities (phonon spectra, phonon densities of states, specific heat), as well as information about point defects such as vacancy and antisite formation energies.

Lawson, John W.↗

Flight service evaluation of Kevlar-49 epoxy composite panels in wide-bodied commercial transport aircraft

Kevlar-49 fairing panels, installed as flight service components on three L-1011s, were inspected after four years' service, and found to be performing satisfactorily. The Kevlar-49 components were all found to be performing satisfactorily in service with no major problems, or any condition requiring corrective action. The only defects noted were minor impact damage, and a minor degree of fastener hole fraying and elongation. These are for the most part comparable to damage noted on fiberglass fairings. A concurrent investigation was conducted on Kevlar-49/epoxy coupons exposed to an outdoor environment over a three year period at various locations providing a variety of climatic conditions. Weight changes and retention of mechanical properties were determined after one and three years exposure. A net weight loss occurred due to ultraviolet effects on the unpainted specimens. Mechanical property retentions were satisfactory with most specimens retaining well over 80% of their original value.

Stone, R. H.↗

Mean rotor wake characteristics of an aerodynamically loaded 0.5 m diameter fan

Mean rotor wake properties at several downstream distances behind the rotor of a loaded 1.2 pressure ratio fan were measured with a cross film anemometer in an anechoic wind tunnel. Mean wake characteristics in the midspan and near tip region were determined utilizing an ensemble averaging technique. The upwash and streamwise components of the velocity behind the rotor indicate a complex structure superimposed on the major velocity defects at a down stream spacing of 0.5 rotor chords. Spectral analysis indicates high levels of the second and fourth harmonics of the blade passage frequency in the midspan region while the blade passage frequency and its second and third harmonic are predominant in the tip region.

Shaw, L. M.↗

Mean rotor wake characteristics of an aerodynamically loaded 0.5 m diameter fan

Mean rotor wake properties at several downstream distances behind the rotor of a loaded 1.2 pressure ratio fan were measured with a cross film anemometer in an anechoic wind tunnel. Mean wake characteristics in the midspan and near tip region were determined utilizing an ensemble averaging technique. The upwash and streamwise components of the velocity behind the rotor indicate a complex structure superimposed on the major velocity defects at a downstream spacing of 0.5 rotor chords. Spectral analysis indicates high levels of the second and fourth harmonics of the blade passage frequency in the midspan region while the blade passage frequency and its second and third harmonic are predominant in the tip region.

Shaw, L. M.↗

The growth of cubic silicon carbide on a compliant substrate

Research has shown that silicon carbide grown on silicon and 6H silicon carbide has problems associated with these substrates. This is because silicon and silicon carbide has a 20% lattice mismatch and cubic silicon carbide has not been successfully achieved on 6H silicon carbide. We are investigating the growth of silicon carbide on a compliant substrate in order to grow defect free silicon carbide. This compliant substrate consists of silicon/silicon dioxide with 1200 A of single crystal silicon on the top layer. We are using this compliant substrate because there is a possibility that the silicon dioxide layer and the carbonized layer will allow the silicon lattice to shrink or expand to match the lattice of the silicon carbide. This would improve the electrical properties of the film for the use of device fabrication. When trying to grow silicon carbide, we observed amorphous film. To investigate, we examined the process step by step using RHEED. RHEED data showed that each step was amorphous. We found that just by heating the substrate in the presence of hydrogen it changed the crystal structure. When heated to 1000 C for 2 minutes, RHEED showed that there was an amorphous layer on the surface. We also heated the substrate to 900 C for 2 minutes and RHEED data showed that there was a deterioration of the single crystalline structure. We assumed that the presence of oxygen was coming from the sides of the silicon dioxide layer. Therefore, we evaporated 2500 A of silicon to all four edges of the wafer to try to enclose the oxygen. When heating the evaporated wafer to 900 C the RHEED data showed single crystalline structure however at 1000 C the RHEED data showed deterioration of the single crystalline structure. We conclude that the substrate itself is temperature dependent and that the oxygen was coming from the sides of the silicon dioxide layer. We propose to evaporate more silicon on the edges of the wafer to eliminate the escape of oxygen. this will allow us to grow single crystal cubic silicon carbide.

Mitchell, Sharanda↗

The Structure of Ice Nanoclusters and Thin-films of Water Ice: Implications for Icy Grains in Cold Molecular Clouds

The cubic to hexagonal phase transformation in water ice (I(sub c) yields I(sub h)) is used to measure the extent to which surface structure and impurities control bulk properties. In pure crystalline (I(sub c)) water ice nanoclusters and in thin-films of impure water ice, I(sub c) yields I(sub h) occurs at lower temperatures than in thin-films of pure water ice. The disordered surface of the 20 nm diameter nanoclusters promotes transformations or reactions which would otherwise be kinetically hindered. Likewise, impurities such as methanol introduce defects into the ice network, thereby allowing sluggish structural transitions to proceed. Such surface-related phenomena play an important role in promoting chemical reactions on interstellar ice grains within cold molecular clouds, where the first organic compounds are formed.

Delzeit, Lance↗

Characterization on defect solids

The purpose of this research has been to develop new semi-empirical techniques to describe ceramics, alloys, and metal/ceramic interfaces with applications in mind that support the materials aspects of the high speed civil transport program (HSCT). HSCT requires methods that aid in the design of alloys and ceramics for new high strength, high temperature applications. Current theoretical methods are not capable of carrying out this mission. Hence, new accurate and more efficient theoretical techniques are needed to facilitate the design of new materials and the examination of their properties. This program concentrated on modeling ceramics, but also dealt with alloy properties to a lesser degree. The primary accomplishment of this research was the development of a new equation of state (EOS) that models the energy/bond length relationship and includes terms that represent charge transfer between cations and anions. The new EOS has been used by researchers at the Naval Research Laboratory to develop a new semi-empirical method for calculating properties of ceramics and metal ceramic interfaces based on the embedded atom method. The results of the director's discretionary fund (DDF) research describing the binding energy relation was the enabling theoretical basis. Also the workers at Cleveland State and NASA Lewis have detailed an approach based on equivalent crystal theory as part of the DDF which is currently under development. In addition, initial results for using the Harris functional method have been developed. Finally, the techniques developed by us have proved useful for the study of high pressure properties of solids and have been used extensively by researchers in this field.

Schlosser, Herbert↗

Effect of cryogenic irradiation on NERVA structural alloys

Several alloys (Hastelloy X, AISI 347, A-286 bolts, Inconel 718, Al 7039-T63 and Ti-5Al-2.5Sn ELI) were irradiated in liquid nitrogen (140 R) to neutron fluences between 10 to the 17th power and 10 to the 19th power nvt (E greater than 1.0 Mev). After irradiation, tensile properties were obtained in liquid nitrogen without permitting any warmup except for some specimens which were annealed at 540 R. The usual trend of radiation damage typical for materials irradiated at and above room temperature was observed, such as an increase in strength and decrease in ductility. However, the damage at 140 R was greater because this temperature prevented the annealing of radiation-induced defects which occurs above 140 R.

Dixon, C. E.↗

Characterization of convection related defects in II-VI compound semiconductors

The research carried out under NAG8-913, 'Characterization of Convection Related Defects in II-VI Compound Semiconductors', was aimed at exploration of the potential of axial magnetic fields for melt stabilization when applied in Bridgman geometry to the growth of HgMnTe. The thrust of the work was directed at the experimental establishment of the limits of magnetic melt stabilization during crystal growth and at the analytical verification of the effects of stabilization on critical materials properties. The data obtained indicate noticeable stabilization effects, particularly as far as the formation of microscopic compositional inhomogeneities is concerned. The effects of magnetic fields on precipitate formation are found to be minor. Magnetic field effects were investigated for both 'Bridgman' and 'travelling heater' geometries. The research was conducted during the period from May 22 to September 30, 1992.

Witt, August F.↗

Observation and Modeling of Single Wall Carbon Nanotube Bend Junctions

Single wall carbon nanotube (SWNT) bends, with diameters from approx. 1.0 to 2.5 nm and bend angles from 18 deg. to 34 deg., are observed in catalytic decomposition of hydrocarbons at 600 - 1200 C. An algorithm using molecular dynamics simulation (MD) techniques is developed to model these structures that are considered to be SWNT junctions formed by topological defects (i.e. pentagon-heptagon pairs). The algorithm is used to predict the tube helicities and defect configurations for bend junctions using the observed tube diameters and bend angles. The number and arrangement of the defects at the junction interfaces are found to depend on the tube helicities and bend angle. The structural and energetic calculations using the Brenner potential show a number of stable junction configurations for each bend angle with the 34 deg. bends being more stable than the others. Tight binding calculations for local density of state (LDOS) and transmission coefficients are carried out to investigate electrical properties of the bend junctions.

Han, Jie↗

Carbon Nanotube Based Molecular Electronics

Carbon nanotubes and the nanotube heterojunctions have recently emerged as excellent candidates for nanoscale molecular electronic device components. Experimental measurements on the conductivity, rectifying behavior and conductivity-chirality correlation have also been made. While quasi-one dimensional simple heterojunctions between nanotubes with different electronic behavior can be generated by introduction of a pair of heptagon-pentagon defects in an otherwise all hexagon graphene sheet. Other complex 3- and 4-point junctions may require other mechanisms. Structural stability as well as local electronic density of states of various nanotube junctions are investigated using a generalized tight-binding molecular dynamics (GDBMD) scheme that incorporates non-orthogonality of the orbitals. The junctions investigated include straight and small angle heterojunctions of various chiralities and diameters; as well as more complex 'T' and 'Y' junctions which do not always obey the usual pentagon-heptagon pair rule. The study of local density of states (LDOS) reveal many interesting features, most prominent among them being the defect-induced states in the gap. The proposed three and four pointjunctions are one of the smallest possible tunnel junctions made entirely of carbon atoms. Furthermore the electronic behavior of the nanotube based device components can be taylored by doping with group III-V elements such as B and N, and BN nanotubes as a wide band gap semiconductor has also been realized in experiments. Structural properties of heteroatomic nanotubes comprising C, B and N will be discussed.

Srivastava, Deepak↗

Effect of Weld Tool Geometry on Friction Stir Welded Ti-6Al-4V

In this study, flat 0.250" thick Ti-6Al-4V panels were friction stir welded (FSWed) using weld tools with tapered pins. The five different pin geometries of the weld tools included: 0 degree (straight cylinder), 15 degree, 30 degree, 45 degree, and 60 degree angles on the frustum. All weld tools had a smooth 7 degree concave shoulder and were made from microwave sintered tungsten carbide. For each weld tool geometry, the FSW process parameters were optimized to eliminate internal defects. All the welds were produced in position control with a 2.5 degree lead angle using a butt joint configuration for the panels. The process parameters of spindle rpm and travel speed were varied, altering the hot working conditions imparted to the workpiece. Load cells on the FSWing machine allowed for the torque, the plunge force, and the plow force to be recorded during welding. Resulting mechanical properties were evaluated from tensile tests results of the FSWjoints. Variations in the material flow were investigated by use of microstructural analysis including optical microscopy (OM), scanning electron microscopy (SEM), and orientation image mapping (aIM).

Querin, Joseph A.↗

Rhombohedral cubic semiconductor materials on trigonal substrate with single crystal properties and devices based on such materials

Growth conditions are developed, based on a temperature-dependent alignment model, to enable formation of cubic group IV, group II-V and group II-VI crystals in the [111] orientation on the basal (0001) plane of trigonal crystal substrates, controlled such that the volume percentage of primary twin crystal is reduced from about 40% to about 0.3%, compared to the majority single crystal. The control of stacking faults in this and other embodiments can yield single crystalline semiconductors based on these materials that are substantially without defects, or improved thermoelectric materials with twinned crystals for phonon scattering while maintaining electrical integrity. These methods can selectively yield a cubic-on-trigonal epitaxial semiconductor material in which the cubic layer is substantially either directly aligned, or 60 degrees-rotated from, the underlying trigonal material.

Park, Yeonjoon↗

Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport

The objective of the project is to determine the relative contributions of gravity-driven fluid flows to the compositional distribution, incorporation of impurities and defects, and deviation from stoichiometry observed in the crystals grown by vapor transport as results of buoyance-driven convection and growth interface fluctuations caused by irregular fluid-flows. ZnSe and related ternary compounds, such as ZnSeS and ZnSeTe, were grown by vapor transport technique with real time in-situ non-invasive monitoring techniques. The grown crystals were characterized extensively to correlate the grown crystal properties with the growth conditions. The following are the research progress in the past two years. In-situ monitoring of partial pressure by optical absorption technique and visual observation of the growing crystal were performed during vapor growth of ZnSe. Low-temperature photoluminescence (PL) spectra and glow discharge mass spectroscopy (GDMS) were measured on ZnSe starting materials provided by various vendors and on bulk crystals grown from these starting materials by physical vapor transport (PVT) to study the effects of purification and contamination during crystal growth process. Optical characterization was performed on wafers sliced from the grown crystals of ZnSe, ZnTe and ZnSe(1-x),Te(x), (0<x<0.4). Energy band gaps at room temperature were determined from optical transmission measurements and a best fit curve to the band gap vs. composition, x, data gives a bowing parameter of 1.45. Low-temperature photoluminescence (PL) spectra of ZnSe and ZnTe were dominated by near band edge emissions and no deep donor-acceptor pairs were observed. The PL spectrum exhibited a broad emission for the ZnSe(1-x),Te(x), samples, 0.09<x<0.39. The single broad PL emission spectra and the spectra measured as a function of temperature were interpreted as being associated with the exciton bound to Te clusters because of the high Te content in these samples. To validate numerical codes, in-situ monitoring during the PVT of HgI2 was designed. Optical absorption spectra of the vapor phase over HgI2 were measured for wavelengths between 200 and 600nm at sample temperatures between 349 and 610K. The Beer's Law constants for 15 wavelengths between 200 and 440 nm were determined. From these constants the vapor pressure of HgI2 was established as a function of temperature for the liquid and the solid Beta-phases To characterize the growth conditions during the PVT growth of In-doped ZnSe the optical absorbance of the vapor phase over the In-Se system were measured and were used to obtain the partial pressures of Se2(g) and In2Se(g).

Su, Ching-Hua↗

Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport

The objective of the project is to determine the relative contributions of gravity-driven fluid flows to the compositional distribution, incorporation of impurities and defects, and deviation from stoichiometry observed in the crystals grown by vapor transport as results of buoyance-driven convection and growth interface fluctuations caused by irregular fluid-flows. ZnSe and related ternary compounds, such as ZnSeS and ZnSeTe, were grown by vapor transport technique with real time in-situ non-invasive monitoring techniques. The grown crystals were characterized extensively to correlate the grown crystal properties with the growth conditions.

Su, Ching-Hua↗

Morphological Evidence for an Exclusively Inorganic Origin for Magnetite in Martian Meteorite ALH84001

The origin of magnetite crystals in Martian Meteorite ALH84001 is the focus of a debate about the possibility of past (and present) life on Mars. McKay et al. originally suggested that some of the magnetite crystals associated with carbonate globules in Martian Meteorite ALH84001 are biogenic in ori-gin, because they are single magnetic domain, free of crystalline defects, chemically pure, and coexist with other metastable phases in apparent disequilibrium. Thomas-Keprta et al. reported that a subpopulation of magnetite crystals (approx. 25%) associated with carbonate globules in ALH84001 and magnetite crystals produced by magnetotactic bacterial strain MV-1 have similar morphologies with crystal elongation along the [111] crystallographic axis that they describe as "truncated hexa-octahedral" ([111-THO]) magnetite. Along with several other properties, the [111]-THO morphology has been proposed to constitute a biomarker (i.e., formed only in biogenic processes), so that the presence of [111]-THO magnetite in ALH84001 may be evidence for past life on Mars.

Golden, D. C.↗

Structure-property relationships in directionally solidified single crystal NiAl

The ordered intermetallic alloy NiAl is being considered as a potential high temperature structural material, but lack of ductility at ambient temperatures, especially in polycrystalline form, is presently a major obstacle in achieving this goal. Even general agreement of the intrinsic ductility that can be achieved in monocrystals is in dispute. In order to understand this problem, two directionally solidified ingots of NiAl which displayed known differences in ductility were characterized in sufficient detail to identify the corresponding microstructural differences. It was found that the type and size of casting defects, i.e., porosity, present in the material were the major factors in controlling ductility of NiAl single crystals and could explain the order of magnitude variance in fracture strains reported in the literature.

Noebe, R. D.↗