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DOE OSTI2023

Improving Proton Conductivity by Navigating Proton Trapping in High Scandium-Doped Barium Zirconate Electrolytes

Proton-conducting oxides are used in intermediate-temperature (300 °C < T < 700 °C) applications of fuel cells, electrolyzers, membrane reactors, hydrogen pumps, and sensors. The proton conductivity of doped ABO 3 perovskites is partly dependent on the proton concentration and hence on the level of material hydration. However, how the material hydration ability is affected by differences in doping is not fully understood. Here, we show the prospect of proton trapping and detrapping that influences material hydration and dehydration. The proton-trapping influence is significant for Sc-doped BaZrO 3 compared to Y-doped BaZrO 3 . Here, our work offers a perspective to understand how defect interaction/associations influence the hydration ability of proton-conducting oxides. Furthermore, positron annihilation lifetime spectroscopy was revealed to be a valuable technique for studying the proton-trapping phenomena and the defect chemistry of dense proton conductors. Density functional theory calculations also showed that a high hydration level in Sc-doped BaZrO 3 boosts proton migration. In contrast, the effect of boosting the proton migration due to increased hydration is limited for Y-doped BaZrO 3 . This effect, in turn, might explain the trend of conductivity with dopant concentration in doped BaZrO 3 .

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2021

Modeling the performance and faradaic efficiency of solid oxide electrolysis cells using doped barium zirconate perovskite electrolytes

Y-doped BaZrO 3 (BaZr 1 x Y x O 3 δ , or “BZY”), a proton-conducting ceramic featuring high bulk conductivity and good chemical stability, is a promising electrolyte material for solid oxide electrolysis cells. Further doping with Ce and/or Yb (creating materials “BCZY” and “BCZYYb”) can improve conductivity and sintering properties, but at significant penalty to cells’ faradaic efficiency (FE). Studies have proposed that reduction of lattice Ce can occur in the hydrogen electrode, which consumes some hydrogen produced by the hydrogen evolution reaction, leading to decreased FE. Despite studies suggesting this phenomenon, the mechanism is largely unknown. In this work, we developed a multiphysics model to study the transport of multiple defect species and the performance of BZY, BCZY, and BCZYYb, capturing the tradeoff between enhanced performance at the cost of FE for BCZY and BCZYYb electrolytes compared to BZY. We also found that increasing the water content of the anode gas supply lowers the current output of the cell but results in better FE. The model, which uses several parameters previously unavailable in the literature, was validated to experiments varying temperature, steam water content, and electrolyte material, as well as two performance metrics (performance curves and FE). Results verify and explain observed trends, informing future work on Ce-doped BZY electrolytes.

08 HYDROGEN↗

DOE OSTI2025

Symmetry‐Breaking Strategy Yields Dopant‐Free Small Molecule Hole Transport Materials for Inorganic Perovskite Solar Cells with 20.58% Efficiency and Outstanding Stability

Abstract Inorganic perovskites are known for their excellent photothermal stability; however, the photothermal stability of all‐inorganic n‐i‐p perovskite solar cells (PSCs) is compromised due to ion diffusion and free radical‐induced degradation caused by the use of doped spiro‐OMeTAD hole transport materials (HTMs). In this study, two isomeric donor–acceptor–donor (D–A–D) type small molecules, namely HBT and HiBT, were developed and used as dopant‐free HTMs, using 2,1,3‐benzothiadiazole or benzo[d][1,2,3]thiadiazole as acceptor moieties. The HiBT molecule, with its symmetry‐breaking features, exhibits a large dipole moment, enhanced coordination‐active sites, and a well‐aligned energy level structure, all of which contribute to passivating perovskite surface defects and improving free charge separation. As a result, inorganic CsPbI 3 PSCs with HiBT HTM achieved an impressive power conversion efficiency (PCE) of 20.58%, the highest reported for dopant‐free HTM‐based inorganic PSCs. Moreover, the enhanced hydrophobic properties of HiBT molecules, coupled with their ability to passivate perovskite surface defects, contribute to significantly improved device stability. The unencapsulated devices based on HiBT HTM retained over 83% and 80% of their initial efficiency after being stored at 85 °C for 50 days and undergoing maximum power point (MPP) tracking at 85 °C for 1100 h, respectively. These results highlight that the symmetry‐breaking strategy is an exceptionally effective approach for designing efficient, dopant‐free small molecule HTMs, significantly contributing to both the high efficiency and enhanced stability of all‐inorganic PSCs.

Chemistry↗

DOE OSTI2023

Permittivity Threshold and Thermodynamics of Integer Charge-Transfer Complexation for an Organic Donor–Acceptor Pair

Molecular or chemical-based charge doping provides a means to change the properties (e.g. conductivity) of a material through a complete or partial transfer of charge between its constituents. Understanding how local material environment impacts this process is thus important for controlling the properties of organic materials. This paper presents spectroscopic investigations of molecular charge transfer interactions between a pair of common charge-doping and -transporting materials (2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane, F4TCNQ, and N,N’-Diphenyl-N-N’-di-p-tolylbenzene-1,4-diamine, MPDA). Equilibrium constants associated with charge transfer were determined for donor-acceptor pairs dissolved in a series of solvents covering a range of values of permittivity. A threshold for highly favorable charge separation was observed to occur at a permittivity of ~8-9, with more and less favorable charge separation observed in solvents of higher and lower permittivity, respectively, but with chloroform (permittivity=4.81) exhibiting an anomalously favorable charge separation. Temperature-dependent studies were undertaken to assess the thermodynamics of charge separation. In 1,2- dichloroethane (permittivity=10.36) and chlorobenzene (permittivity=5.62), charge transfer was observed to be both enthalpically and entropically favorable. Charge separation in chloroform is exothermic and entropically disfavored, indicating that specific, inner-shell solvent-solute interactions stabilize the charge-separated complex and result in a net increase in local solution structure. Furthermore, our results provide insight on how modification to the chemical environment may be utilized to support stable charge transfer for molecular doping applications and requiring only modest changes in local permittivity.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Magnetocaloric Effect in Lightly‐Doped Fe 5 Si 3 Single Crystals

Abstract Development of promising new materials for above room temperature magnetic cooling applications relies on careful balancing of structure and composition to maximize accessible metastable phases that can drive a strong magnetocaloric effect (MCE). However, the working temperatures of these materials may fall outside of desired application windows. In this work, it is shown that it is possible to control metastable phase stability temperatures of Fe 5 Si 3 through selection of appropriate spin and charge doping. Here, the parent material's desired structure appears only within a narrow temperature range from 1098 to 1303 K. Doping with Mn and P is shown to allow stabilization of the parent's high temperature phase and resulting MCE to room temperature. The structural and magnetic properties, and the magnetocaloric effect of single crystal Fe 4.83 Mn 0.16 Si 2.91 P 0.09 (FMSP) are investigated experimentally and theoretically. A first‐order magneto‐elastic transition is observed at 348 K, where magnetic onset is accompanied by a change in lattice volume without an apparent change in crystal symmetry. Although the trace Mn and P doping are found to decrease the T C , the maximum magnetic entropy change Δ S Max ( T ) and the relative cooling power (RCP) of FMSP are enhanced compared to polycrystalline Fe 5 Si 3 . As a result, an intrinsically broader entropy change over a larger temperature span is generated in the lightly doped single crystal of Fe 5 Si 3 . The magnetic moment of the system is also enhanced. Density functional theory (DFT) calculations are performed to gain microscopic insights into the experimental findings. The results suggest that the hexagonal Fe 5 Si 3 is a new giant room temperature MCE material that is on par with La–Fe–Si and Fe‐Mn‐P‐Si systems.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Unlocking the Potential of A-Site Ca-Doped LaCo 0.2 Fe 0.8 O 3-δ : A Redox-Stable Cathode Material Enabling High Current Density in Direct CO 2 Electrolysis

Massive carbon dioxide (CO 2 ) emission from recent human industrialization has affected the global ecosystem and raised great concern for environmental sustainability. The solid oxide electrolysis cell (SOEC) is a promising energy conversion device capable of efficiently converting CO 2 into valuable chemicals using renewable energy sources. However, Sr-containing cathode materials face the challenge of Sr carbonation during CO 2 electrolysis, which greatly affects the energy conversion efficiency and long-term stability. Thus, A-site Ca-doped La1– x CaxCo 0.2 Fe 0.8 O 3-δ (0.2 ≤ x ≤ 0.6) oxides are developed for direct CO 2 conversion to carbon monoxide (CO) in an intermediate-temperature SOEC (IT-SOEC). With a polarization resistance as low as 0.18 O cm 2 in pure CO 2 atmosphere, a remarkable current density of 2.24 A cm –2 was achieved at 1.5 V with La 0.6 Ca 0.4 Co 0.2 Fe 0.8 O 3-δ (LCCF64) as the cathode in La 0.8 Sr 0.2 Ga 0.83 Mg 0.17 O 3-δ (LSGM) electrolyte (300 µm) supported electrolysis cells using La 0.6 Sr 0.4 Co 0.2 Fe 0.8 O 3-δ (LSCF) as the air electrode at 800 °C. Furthermore, symmetrical cells with LCCF64 as the electrodes also show promising electrolysis performance of 1.78 A cm –2 at 1.5 V at 800 °C. In addition, stable cell performance has been achieved on direct CO 2 electrolysis at an applied constant current of 0.5 A cm –2 at 800 °C. The easily removable carbonate intermediate produced during direct CO 2 electrolysis makes LCCF64 a promising regenerable cathode. The outstanding electrocatalytic performance of the LCCF64 cathode is ascribed to the highly active and stable metal/perovskite interfaces that resulted from the in situ exsolved Co/CoFe nanoparticles and the additional oxygen vacancies originated from the Ca 2 Fe 2 O 5 phase synergistically providing active sites for CO 2 adsorption and electrolysis. Here this study offers a novel approach to design catalysts with high performance for direct CO 2 electrolysis.

30 DIRECT ENERGY CONVERSION↗

DOE OSTI2022

Iodine Electrochemistry Dictates Voltage‐Induced Halide Segregation Thresholds in Mixed‐Halide Perovskite Devices

Abstract Owing to straightforward stoichiometry–bandgap tunability, mixed‐halide perovskites are ideal for many optoelectronic devices. However, unwanted halide segregation under operational conditions, including light illumination and voltage bias, restricts practical use. Additionally, the origin of voltage‐induced halide segregation is still unclear. Herein, a systematic voltage threshold study in mixed bromide/iodide perovskite devices is performed and leads to observation of three distinct voltage thresholds corresponding to the doping of the hole transport material (0.7 ± 0.1 V), halide segregation (0.95 ± 0.05 V), and degradation (1.15 ± 0.05 V) for an optically stable mixed‐halide perovskite composition with a low bromide content (10%). These empirical threshold voltages are minimally affected by composition until very Br‐rich compositions, which reveals the dominant role of iodide/triiodide/iodine electrochemistry in voltage‐induced Br/I phase separation and transport layer doping reactions in halide perovskite devices.

36 MATERIALS SCIENCE↗

DOE OSTI2022

A mechanistic study of the dopant-induced breakdown in halide perovskites using solid state energy storage devices

Doping halide perovskites (HPs) with extrinsic species, such as alkali metal ions, plays a critical, albeit often elusive role in optimising optoelectronic devices. Here, we use solid state lithium ion battery inspired devices with a polyethylene oxide-based polymer electrolyte to dope HPs controllably with lithium ions. We perform a suite of operando material analysis techniques while dynamically varying Li doping concentrations. We determine and quantify three doping regimes; a safe regime, with doping concentrations of <10 20 cm –3 (2% Li : Pb mol%) in which the HP may be modified without detrimental effect to its structure; a minor decomposition regime, in which the HP is partially transformed but remains the dominant species; and a major decomposition regime in which the perovskite is superseded by new phases. We provide a mechanistic description of the processes mediating between each stage and find evidence for metallic Pb (0) , LiBr and LiPbBr 2 as final decomposition products. Combining results from synchrotron X-ray diffraction measurements with in situ photoluminescence and optical reflection microscopy studies, we distinguish the influences of free charge carriers and intercalated lithium independently. We find that the charge density is equally as important as the geometric considerations of the dopant species and thereby provide a quantitative framework upon which the future design of doped-perovskite energy devices should be based.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2024

Functionalized Graphene via a One-Pot Reaction Enabling Exact Pore Sizes, Modifiable Pore Functionalization, and Precision Doping

Functionalizing graphene with exact pore size, specific functional groups, and precision doping poses many significant challenges. Current methods lack precision and produce random pore sizes, sites of attachment, and amounts of dopant, leading to compromised structural integrity and affecting graphene’s applications. In this work, we report a strategy for the synthesis of functionalized graphitic materials with modifiable nanometer-sized pores via a Pictet–Spengler polymerization reaction. This one-pot, four-step synthesis uses concepts based on covalent organic frameworks (COFs) synthesis to produce crystalline two-dimensional materials that were confirmed by PXRD, TEM measurements, and DFT studies. These new materials are structurally analogous to doped graphene and graphene oxide (GO) but, unlike GO, maintain their semiconductive properties when fully functionalized.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

NASA NTRSDate not supplied

Morphological evolution and transition at nanoscale in BSTO ceramic materials

Considerable efforts have been devoted for the development of low cost ferroelectric and clean energy storage multifunctional materials. Modification in design and production of a low cost material with well proven process provides pathway for high energy density dielectric energy storage. We studied fluorine doped a commercially well-established material system barium strontium titanate with two different concentrations of dopants and studied the morphological transition and its effect on properties. It was observed that sample with higher concentration transitioned much faster into glassy state, followed by growth of fibers which turned into a self-arranged bird nest type shape. The sample with lower concentration changed slowly into glassy state and only few fibers were farmed. Dielectric was highly dependent on processing methods and shows variation with crystallinity of material, temperature and cooling conditions during processing. In the higher concentration range, we observed nano-scale interface breakdown very similar to that of solid-liquid interface breakdown during crystal growth.

dielectric↗

NASA NTRS1987

Effect of high-temperature annealing on the microstructure and thermoelectric properties of GaP doped SiGe

Annealing of GaP doped SiGe will significantly alter the thermoelectric properties of the material resulting in increased performance as measured by the figure of merit Z and the power factor P. The microstructures and corresponding thermoelectric properties after annealing in the 1100 to 1300 C temperature range have been examined to correlate performance improvement with annealing history. The figure of merit and power factor were both improved by homogenizing the material and limiting the amount of cross-doping. Annealing at 1215 C for 100 hr resulted in the best combination of thermoelectric properties with a resultant figure of merit exceeding 1x10 to the -3 deg C to the -1 and a power factor of 44 microW/cm/deg C sq for the temperature range of interest for space power: 400 to 1000 C.

Draper, Susan L.↗

NASA NTRS2017

Photo-Luminescent Targets in Space

Photo-luminescent ("glow in the dark") products have seen a dramatic increase in performance is the last 15 years with the use of a strontium aluminate formulation. Because of this, ISS uses photo-luminescent markers for interior emergency egress guidance. The marker is COTS material composed of strontium aluminate doped with europium, imbedded in PVC and achieves a light emission performance rated at 600/90 (600 mcd at 10 minutes and 90 mcd at 1 hour, 2 mcd is minimum required for human visibility). The ICA goal is to determine this material's effectiveness for use externally on ISS and/or on visiting vehicles, when packaged in Lexan for UV protection. A thermal test was conducted by EC to characterize the luminance emission profile of the material at extreme cold and hot temperatures, such as experienced on ISS.

Maida, James↗

DOE OSTI2020

Band-edge Engineering to Eliminate Radiation-Induced Defect States in Perovskite Scintillators

Under radiative environments such as extended hard X- or γ-rays, degradation of scintillation performance is often due to irradiation-induced defects. To overcome the effect of deleterious defects, novel design mitigation strategies are needed to identify and design more resilient materials. The potential for band-edge engineering to eliminate the effect of radiation-induced defect states in rare-earth-doped perovskite scintillators is explored, taking Ce 3+ -doped LuAlO 3 as a model material system, using density functional theory (DFT)-based DFT + U and hybrid Heyd–Scuseria–Ernzerhof (HSE) calculations. Furthermore, from spin-polarized hybrid HSE calculations, the Ce 3+ activator ground-state 4f position is determined to be 2.81 eV above the valence band maximum in LuAlO 3 . Except for the oxygen vacancies which have a deep level inside the band gap, all other radiation-induced defects in LuAlO 3 have shallow defect states or are outside the band gap, that is, relatively far away from either the 5d 1 or the 4f Ce 3+ levels. Finally, we examine the role of Ga doping at the Al site and found that LuGaO 3 has a band gap that is more than 2 eV smaller than that of LuAlO 3 . Specifically, the lowered conduction band edge envelopes the defect gap states, eliminating their potential impact on scintillation performance and providing direct theoretical evidence for how band-edge engineering could be applied to rare-earth-doped perovskite scintillators.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Adroit Materials Final Scientific/Technical Report kV-class GaN-based Junction Barrier Schottky diodes using ion implantation

The primary aim of this research was to develop GaN-based Junction Barrier Schottky (JBS) diodes using an innovative ion implantation process previously established in ARPA-E funded projects. The central focus of our proposed technology revolves around selective area p-type doping, accomplished through the implantation of Mg ions. This approach builds upon our successes in the ARPA-E PNDIODES program, advancing towards commercial device integration. Selective area p-doping plays a pivotal role in realizing the next generation of GaN-based power devices, capable of significantly reducing the carbon footprint in the United States by several million tons. While ion implantation is a well-established technique for achieving selective area doping in SiC and Si materials, its feasibility in GaN had not been demonstrated until now. To fabricate high voltage GaN JBS diodes, we initially created thick n-type drift layers with high carrier concentrations ranging from 5×1015 cm-3 to 2×1016 cm-3 and very high mobilities. Subsequently, Mg ions were selectively implanted to form p-type islands within the n-type drift layer. To reduce electric field crowding at the edge of the diode and to achieve high breakdown voltage, junction edge termination (JTE) and floating field rings (FFRs) were formed using Mg implantation. A high temperature, high-pressure post-implantation annealing process was carried out to activate the implanted Mg ions. As a result, we were able to demonstrate GaN JBS diodes with a breakdown voltage of 915 V and an on-resistance of 0.6 mΩ·cm2. These diodes exhibited a forward bias current density of 1 kA/cm2 at 1.5 V. Subsequently, we achieved GaN JBS diodes with a remarkable breakdown voltage of 1900 V and an on-resistance of 1.9 mΩ·cm2, capable of sustaining a forward bias current density of 0.5 kA/cm2 at 1.5 V. Importantly, the ON and OFF state performance of these GaN JBS diodes surpassed that of Si and SiC-based power diodes reported in existing literature. Lastly, we successfully grew 60 μm thick GaN:Si layers using HVPE with a carrier concentration of approximately 3 to 5×1015 cm-3. Based on simulation and empirical data these devices represent 5 kV GaN JBS power diodes, leveraging the developed processes in this project.

36 MATERIALS SCIENCE↗

DOE OSTI2021

On the Equilibrium Electrostatic Potential and Light-Induced Charge Redistribution in Halide Perovskite Structures

Lead halide perovskites are semiconductor materials which are employed as nonintentionally doped absorbers inserted between two selective carrier transport layers (SCTL), realizing a p-i-n or n-i-p heterojunction. In our study, we have developed and investigated a lateral device, based on methylammonium lead iodide (MAPbI3) in which the p-i-n heterojunction develops in the horizontal direction. Our research suggests that the effective doping level in the MAPbI3 film should be very low, below 1012 cm-3. Along the vertical direction, this doping level is not enough to screen the electric field of the buried heterojunction with the SCTL. The perovskite work function is therefore affected by the work function of the SCTL underneath. From drift-diffusion simulations, we show that intrinsic perovskite-SCTL structures develop mV range surface photovoltages (SPVs) under continuous illumination. However, perovskite-SCTL structures can develop SPVs of hundreds of mV, as confirmed by our measurements. We therefore analyzed the compatibility between low doping and low defect densities in the perovskite layer and such high SPV values using numerical modeling. It is shown that these high SPV values could originate from electronic processes due to large band offsets in the buried perovskite-SCTL heterojunctions, or at the SCTL-transparent conductive oxide (TCO) buried heterojunction. However, such electronic processes can hardly explain the long SPV persistence after switching off the illumination.

defects↗

DOE OSTI2024

MEMS RF accelerators for nuclear energy and advanced manufacturing

Energetic ions are widely used to develop radiation hard structural materials and fuels for advanced nuclear energy. Ion beams are also used to generate neutrons for nuclear materials testing, as well as in a series of high impact, high value adding manufacturing processes (ranging from doping of semiconductors to hardening of materials against wear and to increase bio-compatibility of materials). But to date, high power beams of high energy ions are simply too expensive because they are delivered from large single beam accelerators. We have recently demonstrated that MEMS technology enables massively parallel, low cost batch fabrication of ion beams. We propose to scale intense ion accelerators based on MEMS (micro-electro mechanical systems) to high beam power (>10 kW). With our approach, hundreds to thousands of ion beamlets will be densely packed on silicon wafers. Ions are injected and accelerated across gaps formed in stacks of wafers, leading to uniquely high current densities for intense ion accelerators with variable kinetic energy (0.1 to 10 MeV) and variable ion species. Our team brings together experts in high power ion accelerators from Lawrence Berkeley National Laboratory and leading experts in MEMS technology from Cornell University. We will deliver a disruptive technology of low cost, flexible and massively scalable ion accelerators that will enable the rapid development of radiation hard nuclear materials for advanced nuclear energy and enable new applications in manufacturing.

43 PARTICLE ACCELERATORS↗

DOE OSTI2021

DEVELOPMENT OF STABLE ANODE AND CATHODE MATERIALS FOR RECHARGEABLE BATTERIES

Batteries have been employed in a variety of applications, such as portable electronics, electric vehicles (EVs), and stationary energy storage to preserve energy from other renewable sources (like wind or solar energy). The ultimate goal is to develop high energy density, long life span, better safety, and low cost of the batteries. However, current commercialized batteries (like lead-acid, zinc-alkaline, lithium-ion batteries (LIBs)) could not fulfill all the demands of diversified applications. LIBs predominate the market because of their high energy density. To achieve a higher capacity of the cell, high-nickel layered (Ni > 90%) cathode materials are promising candidates since they compose high specific capacity and discharge voltage. In chapter 1, an introduction to cell energy density and the development of high-nickel layered cathode materials along with associated obstacles of poor cycling stability and thermal stability have been discussed. Associated works like doping or surface coating have also been mentioned in this section. In chapter 2, Al doping in high-nickel layered cathode materials to enhance the structural and thermal stability was introduced. Uniform incorporation of Al doping is achieved by mechanical fusion and calcination processes. The Al doping not only decreased the Li/Ni mixing ratio but also enhance the thermal resistance to oxygen evolution because of strong Al-O bonding, which leads to elevated electrochemical and thermal stability. In chapter 3, TiN is implemented as a Ti dopant for high-nickel layered cathode materials to improve the electrochemical performance in the LIBs. The Ti not only diffused within the bulk structure but also formed segregation on the surface, which improved the structural stability and led to better cycling performance. Although LIBs deliver high energy density, safety concerns of flammable organic electrolytes have not been resolved yet. Therefore, the aqueous rechargeable zinc-ion batteries (ZIB) have been praised for their safe, low-cost, eco-friendly stationary energy storage, which is considered as a complementary system to LIBs. In chapter 4, the mechanism, advantages, and challenges of ZIBs would be given and the strategies for solving the zinc metal anode issues have been discussed in this section. In chapter 5, a polymer coating method was reported to facilitate Zn deposition/ stripping by coordination with Zn2+ and prevented direct contact with aqueous electrolyte to block corrosion side-reactions. With this coating, a boost in a lifetime (up to 400 hours) and lower polarization under extremely high current conditions (10 mA cm-2) have been achieved in repeated Zn deposition/ stripping cycling.

25 ENERGY STORAGE↗

DOE OSTI2022

Insight into the Fast-Rechargeability of a Novel Mo 1.5 W 1.5 Nb 14 O 44 Anode Material for High-Performance Lithium-Ion Batteries

Wadsley–Roth phased niobates are promising anode materials for lithium-ion batteries, while their inherently low electrical conductivity still limits their rate-capability. Herein, a novel doped Mo 1.5 W 1.5 Nb 14 O 44 (MWNO) material is facilely prepared via an ionothermal-synthesis-assisted doping strategy. The detailed crystal structure of MWNO is characterized by neutron powder diffraction and aberration corrected scanning transmission electron microscope, unveiling the full occupation of Mo 6+ -dopant at the t1 tetrahedral site. In half-cells, MWNO exhibits enhanced fast-rechargeability. In this work, the origin of the improved performance is investigated by ultraviolet–visible diffuse reflectance spectroscopy, density functional theory (DFT) computation, and electrochemical impedance spectroscopy, revealing that bandgap narrowing improves the electrical conductivity of MWNO. Furthermore, operando X-ray diffraction elucidates that MWNO exhibits a typical solid-solution phase conversion-based lithium-ion insertion/extraction mechanism with reversible structural evolution during the electrochemical reaction. The boosted lithium-ion diffusivity of MWNO, due to the Mo 6+ /W 6+ doping effect, is confirmed by a galvanostatic intermittent titration technique and DFT. With the simultaneously enhanced electrical conductivity and lithium-ion diffusivity, MWNO successfully demonstrates its fast-rechargeability and practicality in the LiNi 0.5 Mn 1.5 O 4 -coupled full-cells. Therefore, this work illustrates the potential of ionothermal synthesis in energy storage materials and provides a mechanistic understanding of the doping effect on improving material's electrochemical performance.

25 ENERGY STORAGE↗