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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 415 records · Page 23
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Relating Hydro–Mechanical and Elastodynamic Properties of Dynamically Stressed Tensile–Fractured Rock in Relation to Applied Normal Stress, Fracture Aperture, and Contact Area

We exploit nonlinear elastodynamic properties of fractured rock to probe the micro-scale mechanics of fractures and understand the relation between fluid transport and fracture aperture under dynamic stressing. Experiments were conducted on rough, tensile-fractured Westerly granite subject to triaxial stresses. We measure fracture permeability for steady-state fluid flow with deionized water. Pore pressure oscillations are applied at amplitudes ranging from 0.2 to 1 MPa at 1 Hz frequency. During dynamic stressing we transmit ultrasonic signals through the fracture using an array of piezoelectric transducers (PZTs) to monitor evolution of interface properties. We examine the influence of fracture aperture and contact area by conducting measurements at effective normal stresses of 10–20 MPa. Additionally, the evolution of contact area with stress is characterized using pressure sensitive film. These experiments are conducted separately with the same fracture and map contact area at stresses from 9 to 21 MPa. The measurements are a proxy for “true” contact area for the fracture surface and we relate them to elastic properties using the calculated PZT sensor footprints via numerical modeling of Fresnel zones. We compare the elastodynamic response of the fracture using the stress-induced changes in ultrasonic wave velocities for transmitter-receiver pairs to image spatial variations in contact properties. We show that nonlinear elasticity and permeability enhancement decrease with increasing normal stress. Additionally, post-oscillation wave velocity and permeability exhibit quick recoveries toward pre-oscillation values. Estimates of fracture contact area (global and local) demonstrate that the elastodynamic and permeability responses are dominated by fracture topology.

58 GEOSCIENCES↗
DOE OSTI2022

Smart soft contact lenses for continuous 24-hour monitoring of intraocular pressure in glaucoma care

Continuous monitoring of intraocular pressure, particularly during sleep, remains a grand challenge in glaucoma care. Here we introduce a class of smart soft contact lenses, enabling the continuous 24-hour monitoring of intraocular pressure, even during sleep. Uniquely, the smart soft contact lenses are built upon various commercial brands of soft contact lenses without altering their intrinsic properties such as lens power, biocompatibility, softness, transparency, wettability, oxygen transmissibility, and overnight wearability. We show that the smart soft contact lenses can seamlessly fit across different corneal curvatures and thicknesses in human eyes and therefore accurately measure absolute intraocular pressure under ambulatory conditions. We perform a comprehensive set of in vivo evaluations in rabbit, dog, and human eyes from normal to hypertension to confirm the superior measurement accuracy, within-subject repeatability, and user comfort of the smart soft contact lenses beyond current wearable ocular tonometers. We envision that the smart soft contact lenses will be effective in glaucoma care.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Novel ZnO:Al contacts to CdZnTe for X- and gamma-ray detectors

CdZnTe (CZT) has made a significant impact as a material for room-temperature nuclear-radiation detectors due to its potential impact in applications related to nonproliferation, homeland security, medical imaging and gamma-ray telescopes. In all such applications, common metals, such as gold, platinum and indium, have been used as electrodes for fabricating the detectors. Because of the large mismatch in the thermal-expansion coefficient between the metal contacts and CZT, the contacts can undergo stress and mechanical degradation, which is the main cause for device instability over the long term. Here, we report for the first time on our use of Al-doped ZnO as the preferred electrode for such detectors. The material was selected because of its better contact properties compared to those of the metals commonly used today. Comparisons were conducted for the detector properties using different contacts and improvements in the performances of ZnO:Al-coated detectors are described in this paper. These studies show that Al:ZnO contacts to CZT radiation detectors offer the potential of becoming a transformative replacement for the common metallic contacts due to the dramatic improvements in the performance of detectors and improved long-term stability.

47 OTHER INSTRUMENTATION↗
DOE OSTI2019

Longitudinal eigenvibration of multilayer colloidal crystals and the effect of nanoscale contact bridges

Longitudinal contact-based vibrations of colloidal crystals with a controlled layer thickness are studied. These crystals consist of 390 nm diameter polystyrene spheres arranged into close packed, ordered lattices with a thickness of one to twelve layers. Using laser ultrasonics, eigenmodes of the crystals that have out-of-plane motion are excited. The particle–substrate and effective interlayer contact stiffnesses in the colloidal crystals are extracted using a discrete, coupled oscillator model. Extracted stiffnesses are correlated with scanning electron microscope images of the contacts and atomic force microscope characterization of the substrate surface topography after removal of the spheres. Solid bridges of nanometric thickness are found to drastically alter the stiffness of the contacts, and their presence is found to be dependent on the self-assembly process. Measurements of the eigenmode quality factors suggest that energy leakage into the substrate plays a role for low frequency modes but is overcome by disorder- or material-induced losses at higher frequencies. These findings help further the understanding of the contact mechanics, and the effects of disorder in three-dimensional micro- and nano-particulate systems, and open new avenues to engineer new types of micro- and nanostructured materials with wave tailoring functionalities via control of the adhesive contact properties.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2020

Drop impact on hot plates: contact times, lift-off and the lamella rupture

When a liquid drop impacts on a heated substrate, it can remain deposited, or violently boil in contact, or lift off with or without ever touching the surface. The latter is known as the Leidenfrost effect. The duration and area of the liquid–substrate contact are highly relevant for the heat transfer, as well as other effects such as corrosion. However, most experimental studies rely on side view imaging to determine contact times, and those are often mixed with the time until the drop lifts off from the substrate. In this work, we develop and validate a reliable method of contact time determination using high-speed X-ray imaging and total internal reflection imaging. We exemplarily compare contact and lift-off times on flat silicon and sapphire substrates. We show that drops can rebound even without formation of a complete vapor layer, with a wide range of lift-off times. On sapphire, we find a local minimum of lift-off times that is much shorter than expected from capillary rebound in the comparatively low-temperature regime of transition boiling/thermal atomization. We elucidate the underlying mechanism related to spontaneous rupture of the lamella and receding of the contact area.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Structure and interface chemistry of MoO{sub 3} back contacts in Cu(In,Ga)Se{sub 2} thin film solar cells

Molybdenum oxide (MoO{sub 3}) is considered as a possible primary back contact for Cu(InGa)Se{sub 2} thin film solar cells for its potential as a transparent back contact for superstrate and bifacial devices. MoO{sub 3} films were deposited on Mo or ITO-coated soda lime glass substrates by reactive rf sputtering in an ambient of Ar + O{sub 2} with O{sub 2}/(O{sub 2} + Ar) = 35% on which Cu(In{sub 0.7}Ga{sub 0.3})Se{sub 2} alloy absorber layers were deposited using multi-source elemental evaporation. Scanning Electron Microscopy studies showed uniform coverage of the as-deposited MoO{sub 3} layer and good adhesion was obtained in all cases. X-ray Photoelectron Spectroscopy depth profile analysis showed that MoSe{sub 2} was not formed at the Cu(InGa)Se{sub 2} interface with either the Mo-MoO{sub 3} or ITO-MoO{sub 3} back contacts. Determination of the valence band offsets showed that the MoO{sub 3} layer at the interface changes the energy band alignment with Cu(InGa)Se{sub 2}, producing a primary contact with lower valence band offset than ITO. Cu(In,Ga)Se{sub 2} thin film solar cells prepared using an as-deposited Mo-MoO{sub 3} back contact yielded a best conversion efficiency of 14%, with V{sub OC} = 647 mV, J{sub SC} = 28.4 mA/cm{sup 2}, and FF = 78.1%. Cells with ITO-MoO{sub 3} back contact showed a best efficiency of 12%, with V{sub OC} = 642 mV, J{sub SC} = 26.8 mA/cm{sup 2}, and FF = 69.2%.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Amorphous silicon passivated contacts for diffused junction silicon solar cells

Carrier recombination at the metal contacts is a major obstacle in the development of high-performance crystalline silicon homojunction solar cells. To address this issue, we insert thin intrinsic hydrogenated amorphous silicon [a-Si:H(i)] passivating films between the dopant-diffused silicon surface and aluminum contacts. We find that with increasing a-Si:H(i) interlayer thickness (from 0 to 16 nm) the recombination loss at metal-contacted phosphorus (n{sup +}) and boron (p{sup +}) diffused surfaces decreases by factors of ∼25 and ∼10, respectively. Conversely, the contact resistivity increases in both cases before saturating to still acceptable values of ∼ 50 mΩ cm{sup 2} for n{sup +} and ∼100 mΩ cm{sup 2} for p{sup +} surfaces. Carrier transport towards the contacts likely occurs by a combination of carrier tunneling and aluminum spiking through the a-Si:H(i) layer, as supported by scanning transmission electron microscopy–energy dispersive x-ray maps. We explain the superior contact selectivity obtained on n{sup +} surfaces by more favorable band offsets and capture cross section ratios of recombination centers at the c-Si/a-Si:H(i) interface.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

First principles study of metal contacts to monolayer black phosphorous

Atomically thin layered black phosphorous (BP) has recently appeared as an alternative to the transitional metal dichalcogenides for future channel material in a metal-oxide-semiconductor transistor due to its lower carrier effective mass. Investigation of the electronic property of source/drain contact involving metal and two-dimensional material is essential as it impacts the transistor performance. In this paper, we perform a systematic and rigorous study to evaluate the Ohmic nature of the side-contact formed by the monolayer BP (mBP) and metals (gold, titanium, and palladium), which are commonly used in experiments. Employing the Density Functional Theory, we analyse the potential barrier, charge transfer and atomic orbital overlap at the metal-mBP interface in an optimized structure to understand how efficiently carriers could be injected from metal contact to the mBP channel. Our analysis shows that gold forms a Schottky contact with a higher tunnel barrier at the interface in comparison to the titanium and palladium. mBP contact with palladium is found to be purely Ohmic, where as titanium contact demonstrates an intermediate behaviour.

36 MATERIALS SCIENCE↗
DOE OSTI2015

A conduction model for contacts to Si-doped AlGaN grown on sapphire and single-crystalline AlN

Ohmic contacts to AlGaN grown on sapphire substrates have been previously demonstrated for various compositions of AlGaN, but contacts to AlGaN grown on native AlN substrates are more difficult to obtain. In this paper, a model is developed that describes current flow through contacts to Si-doped AlGaN. This model treats the current through reverse-biased Schottky barriers as a consequence of two different tunneling-dependent conduction mechanisms in parallel, i.e., Fowler-Nordheim emission and defect-assisted Frenkel-Poole emission. At low bias, the defect-assisted tunneling dominates, but as the potential across the depletion region increases, tunneling begins to occur without the assistance of defects, and the Fowler-Nordheim emission becomes the dominant conduction mechanism. Transfer length method measurements and temperature-dependent current-voltage (I-V) measurements of Ti/Al-based contacts to Si-doped AlGaN grown on sapphire and AlN substrates support this model. Defect-assisted tunneling plays a much larger role in the contacts to AlGaN on sapphire, resulting in nearly linear I-V characteristics. In contrast, contacts to AlGaN on AlN show limited defect-assisted tunneling appear to be only semi-Ohmic.

Haidet, Brian B.↗
DOE OSTI2016

Surface evolution of perfluoropolyether film at high speed quasi-contact conditions

Nanoscale analysis characterized by microscopy with atomic resolution demand that the targeted surface remains nearly static. Therefore, the interaction between two fast moving surfaces requires a unique methodology to capture its dynamics when contacts are of nominal area on the order of 100 μm{sup 2} but only a few angstroms in depth. We present a contact study of the head-disk interface in hard disk drives, which consists of a disk surface coated with a molecularly thin perfluoropolyether lubricant and a slider surface moving slightly separated from it with a relative velocity of 20 m/s and with 10 nm spacing. By investigating the slider dynamics and lubricant topography in-situ, we disclose that high-speed contact initiates when the slider shears the top surface of the lubricant. Such contact can pile up molecules a few angstroms high as “moguls” or annihilate existing ones through a 5–10 Å interference. The transitional spacing regime of mogul evolution is defined as “quasi-contact,” and it is the initial contact in the fast sliding interface.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Vacuum arcing behavior between transverse magnetic field contacts subjected to variable axial magnetic field

The objective of this work is to reveal the effects of an axial magnetic field (AMF) on the vacuum arc characteristics between transverse magnetic field (TMF) contacts. These vacuum arc characteristics include the vacuum arcing behavior and the arc voltage waveform. In the experiments, an external AMF was applied to a pair of TMF contacts. The external AMF flux density B{sub AMF} can be adjusted from 0 to 110 mT. The arc current in the tests varied over a range from 0 to 20 kA rms at 45 Hz. The contact material was CuCr25 (25% Cr). A high-speed charge-coupled device video camera was used to record the vacuum arc evolution. The experimental results show that the application of the AMF effectively reduces the TMF arc voltage noise component and reduces the formation of liquid metal drops between the contacts. The diffuse arc duration increases linearly with increasing AMF flux density, but it also decreases linearly with increasing arc current under application of the external AMF. The results also indicate that the diffuse arc duration before the current zero is usually more than 1 ms under the condition that the value of the AMF per kiloampere is more than 2.0 mT/kA. Finally, under application of the AMF, the arc column of the TMF contacts may constrict and remain in the center region without transverse rotation. Therefore, the combined TMF–AMF contacts should be designed such that they guarantee that the AMF is not so strong as to oppose transverse rotation of the arc column.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2016

Impact of recess etching and surface treatments on ohmic contacts regrown by molecular-beam epitaxy for AlGaN/GaN high electron mobility transistors

Ohmic contacts fabricated by regrowth of n{sup +} GaN are favorable alternatives to metal-stack-based alloyed contacts in GaN-based high electron mobility transistors. In this paper, the influence of reactive ion dry etching prior to regrowth on the contact resistance in AlGaN/GaN devices is discussed. We demonstrate that the dry etch conditions modify the surface band bending, dangling bond density, and the sidewall depletion width, which influences the contact resistance of regrown contacts. The impact of chemical surface treatments performed prior to regrowth is also investigated. The sensitivity of the contact resistance to the surface treatments is found to depend upon the dangling bond density of the sidewall facets exposed after dry etching. A theoretical model has been developed in order to explain the observed trends.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

SuperWASP J015100.23-100524.2: A SPOTTED SHALLOW-CONTACT BINARY BELOW THE PERIOD LIMIT

SuperWASP J015100.23-100524.2 (hereafter J015100) is an eclipsing binary with an orbital period of 0.d2145 that is below the short-period limit of contact binary stars. Complete light curves of J015100 in B, V, R, and I bands are presented and are analyzed with the Wilson–Devinney method. It has been discovered that J015100 is a shallow-contact binary (f = 14.6(±2.7)%) with a mass ratio of 3.128. It is a W-type contact binary where the less massive component is about 130 K hotter than the more massive one. The asymmetries of light curves are explained as one dark spot on the more massive component. The detection of J015100 as a contact binary below the period limit suggests that contact binaries below this limit are not rapidly destroyed. This shallow-contact system may be formed from a detached short-period binary similar to DV Psc (Sp. = K4/K5; P = 0.d30855) via orbital shrinkage due to angular momentum loss through magnetic stellar wind.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2019

Low-Resistance, High-Yield Electrical Contacts to Atom Scale Si:P Devices Using Palladium Silicide

Scanning tunneling microscopy (STM) enables the fabrication of two-dimensional δ-doped structures in Si with atomistic precision, with applications from tunnel field-effect transistors to qubits. The combination of a very small contact area and the restrictive thermal budget necessary to maintain the integrity of the δ layer make developing a robust electrical contact method a significant challenge to realizing the potential of atomically precise devices. We demonstrate a method for electrical contact using Pd 2 Si formed at the temperature of silicon overgrowth (250 °C), minimizing the diffusive impact on the δ layer. Here, we use the transfer length method to show our Pd 2 Si contacts have very high yield (99.7% +0.2% –1.5%) and low resistivity (272 ± 41 Ω μm) in contacting mesa-etched Si:P δ layers. We also present three terminal measurements of low contact resistance (<1 kΩ) to devices written by STM hydrogen depassivation lithography with similarly high yield (100% +0% –3.2%).

2-dimensional systems↗
DOE OSTI2018

Nonthermal ice nucleation observed at distorted contact lines of supercooled water drops

Ice nucleation is the crucial step for ice formation in atmospheric clouds and therefore underlies climatologically relevant precipitation and radiative properties. Some progress has been made in understanding the roles of temperature, supersaturation, and material properties, but an explanation for the efficient ice nucleation occurring when a particle contacts a supercooled water drop has been elusive for over half a century. Here, we explore ice nucleation initiated at constant temperature and observe that mechanical agitation induces freezing of supercooled water drops at distorted contact lines. Results show that symmetric motion of supercooled water on a vertically oscillating substrate does not freeze, no matter how we agitate it. However, when the moving contact line is distorted with the help of trace amounts of oil or inhomogeneous pinning on the substrate, freezing can occur at temperatures much higher than in a static droplet, equivalent to ~1010 increase in nucleation rate. Several possible mechanisms are proposed to explain the observations. One plausible explanation among them, decreased pressure due to interface curvature, is explored theoretically and compared with the observational results quasiquantitatively. Indeed, the observed freezing-temperature increase scales with contact line speed in a manner consistent with the pressure hypothesis. Whatever the mechanism, the experiments demonstrate a strong preference for ice nucleation at three-phase contact lines compared to the two-phase interface, and they also show that movement and distortion of the contact line are necessary contributions to stimulating the nucleation process.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2020

Conductive Adhesives for Metallization of Interdigitated Back Contact Solar Cells

The metallization and interconnection of Si solar cells to form a module is usually a multi-step process: cells are metallized individually, soldered into strings, and subsequently assembled into a module. Furthermore, the metallization process for individual cells must be compatible with the doped surfaces being contacted, which creates additional challenges when moving from diffused junctions to heterojunctions and/or passivated contact structures. To mitigate these problems and streamline module manufacturing for the case of interdigitated back contact (IBC) cell modules, we developed an approach wherein unmetallized IBC cells are bonded directly to a circuitized backsheet using a conductive adhesive (CA) that only conducts out-of-plane. The metal/CA/silicon stack is bonded by hot-pressing at 100-200 degrees C.For a CA consisting of ethylene vinyl acetate (EVA) filled with Ag-coated spheres or indium powder we find that contact resistivities in the range of 1-10 Wcm 2 are obtained, regardless of which conductive filler and which hot pressing parameters are used. XPS revealed that about 1-2 nm EVA residue bonds to the Si in these samples, suggesting the formation of an insulating barrier that is responsible for the high contact resistance. Using indium powder alone, improved contact resistivities <0.6 Wcm 2 , high shunt resistances, and an implied open-circuit voltage loss below 10 mV were obtained. Furthermore, a cost estimate is presented, indicating that substantial cost savings of up to $10/m 2 , or about $0.05/W DC , are possible through CA-based IBC module manufacturing.

14 SOLAR ENERGY↗
DOE OSTI2024

Impacts of Non-Ideal Back Contact on Capacitance Measurements in CdTe Solar Cells

CdTe solar cells suffer from a non-ideal back contact which can strongly affect the equivalent circuit model and complicate capacitance measurements. Here, five different back contact materials are deposited on identical CdTe absorbers and their influence on capacitance measurements is characterized. A five-element equivalent circuit model is shown to represent a CdTe solar cell with a non-ideal back contact, and capacitance-frequency (C-f) measurements on each sample clearly show the influence of this contact. Capacitance-voltage (C-V) measurements on each sample show the influence of frequency on measured capacitance. In the AlGaOx/Au sample, temperature dependent C-fs show the back barrier height to be 240 meV, and ongoing measurements will give a comparison of back barrier heights for all samples. This study provides insight into the efficacy of various back contacts and highlights potential errors in the interpretation of capacitance measurements due to the presence of the back contact.

cadmium compounds↗
DOE OSTI2023

Radius of Contact During Friction Surfacing of Stainless Steel 304L: Effect of Spindle Speed and Rod Diameter

Abstract The “radius of contact” or the “real-rotational contact plane,” has been increasingly mentioned terminology in friction surfacing. However, the fundamental understanding of the flow dynamics behind this phenomenon is still very limited. The goal of this study was to understand the influence of spindle speed and consumable rod diameter on the flow dynamics and the radius of contact during friction surfacing of 304L stainless steel over a substrate of the same material. Friction surfacing was performed using consumable rods with diameters of 4.76 mm, 9.52 mm, and 12.7 mm while using spindle speeds from 1500 rpm to 20,000 rpm. The impact of spindle speed on deposition morphology, including the radius of contact, was studied. The radius of contact was calculated empirically and was found to be inversely proportional to the tangential velocity of the rod. The coupling between flow stresses and localized forces is hypothesized to be the key factor behind the variation of the radius of contact with processing conditions.

Engineering↗