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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 415 records · Page 23
All sourcesNASA NTRSDOE OSTI
NASA NTRS2010

New Technology for Microfabrication and Testing of a Thermoelectric Device for Generating Mobile Electrical Power

We report the results of fabrication and testing of a thermoelectric power generation module. The module was fabricated using a new "flip-chip" module assembly technique that is scalable and modular. This technique results in a low value of contact resistivity ( < or = 10(exp 5) Ohms-sq cm). It can be used to leverage new advances in thin-film and nanostructured materials for the fabrication of new miniature thermoelectric devices. It may also enable monolithic integration of large devices or tandem arrays of devices on flexible or curved surfaces. Under mild testing, a power of 22 mW/sq cm was obtained from small (<100 K) temperature differences. At higher, more realistic temperature differences, approx.500 K, where the efficiency of these materials greatly improves, this power density would scale to between 0.5 and 1 Watt/cm2. These results highlight the excellent potential for the generation and scavenging of electrical power of practical and usable magnitude for remote applications using thermoelectric power generation technologies.

Prasad, Narashimha S.↗
NASA NTRS2010

Special Component Designs for Differential-Amplifier MMICs

Special designs of two types of electronic components transistors and transmission lines have been conceived to optimize the performances of these components as parts of waveguide-embedded differential-amplifier monolithic microwave integrated circuits (MMICs) of the type described in the immediately preceding article. These designs address the following two issues, the combination of which is unique to these particular MMICs: Each MMIC includes a differential double-strip transmission line that typically has an impedance between 60 and 100 W. However, for purposes of matching of impedances, transmission lines having lower impedances are also needed. The transistors in each MMIC are, more specifically, one or more pair(s) of InP-based high-electron-mobility transistors (HEMTs). Heretofore, it has been common practice to fabricate each such pair as a single device configured in the side-to-side electrode sequence source/gate/drain/gate/source. This configuration enables low-inductance source grounding from the sides of the device. However, this configuration is not suitable for differential operation, in which it is necessary to drive the gates differentially and to feed the output from the drain electrodes differentially. The special transmission-line design provides for three conductors, instead of two, in places where lower impedance is needed. The third conductor is a metal strip placed underneath the differential double-strip transmission line. The third conductor increases the capacitance per unit length of the transmission line by such an amount as to reduce the impedance to between 5 and 15 W. In the special HEMT-pair design, the side-to-side electrode sequence is changed to drain/gate/source/gate/ drain. In addition, the size of the source is reduced significantly, relative to corresponding sizes in prior designs. This reduction is justified by the fact that, by virtue of the differential configuration, the device has an internal virtual ground, and therefore there is no need for a low-resistance contact between the source and the radio-frequency circuitry. The source contact is needed only for DC biasing. These designs were implemented in a single-stage-amplifier MMIC. In a test at a frequency of 305 GHz, the amplifier embedded in a waveguide exhibited a gain of 0 dB; after correcting for the loss in the waveguide, the amplifier was found to afford a gain of 0.9 dB. In a test at 220 GHz, the overall gain of the amplifier- and-waveguide assembly was found to be 3.5 dB.

Kangaslahti, Pekka↗
NASA NTRS2011

Design for On-Sun Evaluation of Evaporator Receivers

A heat pipe designed for operation as a solar power receiver should be optimized to accept the solar energy flux and transfer this heat into a reactor. Optical properties of the surface, thermal conductance of the receiver wall, contact resistance of the heat pipe wick, and other heat pipe wick properties ultimately define the maximum amount of power that can be extracted from the concentrated sunlight impinging on the evaporator surface. Modeling of solar power receivers utilizing optical and physical properties provides guidance to their design. On-sun testing is another important means of gathering information on performance. A test rig is being designed and built to conduct on-sun testing. The test rig is incorporating a composite strip mirror concentrator developed as part of a Small Business Innovative Research effort and delivered to NASA Glenn Research Center. In the strip concentrator numerous, lightweight composite parabolic strips of simple curvature were combined to form an array 1.5 m x 1.5 m in size. The line focus of each strip is superimposed in a central area simulating a point of focus. A test stand is currently being developed to hold the parabolic strip concentrator, track the sun, and turn the beam downward towards the ground. The hardware is intended to be sufficiently versatile to accommodate on-sun testing of several receiver concepts, including those incorporating heat pipe evaporators. Characterization devices are also being developed to evaluate the effectiveness of the solar concentrator, including a receiver designed to conduct calorimetry. This paper describes the design and the characterization devices of the on-sun test rig, and the prospect of coupling the concentrated sunlight to a heat pipe solar power receiver developed as part of another Small Business Innovative Research effort.

Jaworske, Donald A.↗
NASA NTRS2011

Ascent Heating Thermal Analysis on Spacecraft Adaptor Fairings

When the Crew Exploration Vehicle (CEV) is launched, the spacecraft adaptor (SA) fairings that cover the CEV service module (SM) are exposed to aero heating. Thermal analysis is performed to compute the fairing temperatures and to investigate whether the temperatures are within the material limits for nominal ascent aeroheating case. The ascent heating is analyzed by using computational fluid dynamics (CFD) and engineering codes at Marshall Space Flight Center. The aeroheating environment data used for this work is known as Thermal Environment 3 (TE3) heating data. One of the major concerns is with the SA fairings covering the CEV SM and the SM/crew launch vehicle (CLV) flange interface. The TE3 heating rate is a function of time, wall temperature, and the spatial locations. The implementation of the TE3 heating rate as boundary conditions in the thermal analysis becomes challenging. The ascent heating thermal analysis on SA fairings and SM/CLV flange interface are performed using two commercial software packages: Cullimore & Ring (C&R) Thermal Desktop (TD) 5.1 and MSC Patran 2007r1 b. TD is the pre-and post-processor for SINDA, which is a finite-difference-based solver. In TD, the geometry is built and meshed, the boundary conditions are defined, and then SINDA is used to compute temperatures. MSC Pthermal is a finite-element- based thermal solver. MSC Patran is the pre- and post-processor for Pthermal. Regarding the boundary conditions, the convection, contact resistance, and heat load can be imposed in different ways in both programs. These two software packages are used to build the thermal model for the same analysis to validate each other and show the differences in the modeling details.

Wang, Xiao Yen↗
NASA NTRS2012

Method to Improve Indium Bump Bonding via Indium Oxide Removal Using a Multi-Step Plasma Process

A process for removing indium oxide from indium bumps in a flip-chip structure to reduce contact resistance, by a multi-step plasma treatment. A first plasma treatment of the indium bumps with an argon, methane and hydrogen plasma reduces indium oxide, and a second plasma treatment with an argon and hydrogen plasma removes residual organics. The multi-step plasma process for removing indium oxide from the indium bumps is more effective in reducing the oxide, and yet does not require the use of halogens, does not change the bump morphology, does not attack the bond pad material or under-bump metallization layers, and creates no new mechanisms for open circuits.

Greer, H. Frank↗
NASA NTRS2012

Can the Lateral Proximity Effect Be Used to Create the Superconducting Transition of a Micron-Sized TES?

Recent measurements of micron-sized Mo/Au bilayer Transition Edge Sensors (TESs) have demonstrated that the TES can behave like an S-S'-S weak link due to the lateral proximity effect from superconducting leads. In this regime the Tc is a function of bias current, and the effective Tc shifts from the bilayer Tc towards the lead Tc. We explore the idea that a micron-sized S-N-S weak link could provide a new method to engineer the TES Tc. This method would be particularly useful when small size requirements for a bilayer TES (such as for a hot-electron microbolometer) lead to undesirable shifts in the bilayer Te. We present measurements of a variety of micron-sized normal Au 'TES' devices with Nb leads. We find no evidence of a superconducting transition in the Au film of these devices, in dramatic contrast to the strong lateral proximity effect seen in micron-sized Mo/Au bilayer devices. The absence of a transition in these devices is also in disagreement with theoretical predictions for S-N-S weak links. We hypothesize that a finite contact resistance between the Nb and Au may be weakening the effect. We conclude that the use of the lateral proximity effect to create a superconducting transition will be difficult given current fabrication procedures.

Barrentine, E. M.↗
NASA NTRS2012

Efficient Thermally Conductive Strap Design for Cryogenic Propellant Tank Supports and Plumbing

After evalu1ating NASA space architecture goals, the Office of Chief Technologist identified the need for developing enabling technology for long term loiters in space with cryogenic fluids. One such technology is structural heat interception. In this prototype, heat interception at the tank support strut was accomplished using a thermally conductive link to the broad area cooled shield. The design methodology for both locating the heat intercept and predicting the reduction in boil-off heat leak is discussed in detail. Results from the chosen design are presented. It was found that contact resistance resulting from different mechanical attachment techniques played a significant role in the form and functionality of a successful design.

Elchert, J. P.↗
NASA NTRS2012

Efficient Thermally Conductive Strap Design for Cryogenic Propellant Tank Supports and Plumbing

After evaluating NASA space architecture goals, the Office of Chief Technologist identified the need for developing enabling technology for long term loiters in space with cryogenic fluids. One such technology is structural heat interception. In this prototype, heat interception at the tank support strut was accomplished using a thermally conductive link to the broad area cooled shield. The design methodology for both locating the heat intercept and predicting the reduction in boil-off heat leak is discussed in detail. Results from the chosen design are presented. It was found that contact resistance resulting from different mechanical attachment techniques played a significant role in the form and functionality of a successful design.

Elchert, J. P.↗
NASA NTRS2013

Dual ohmic contact to N- and P-type silicon carbide

Simultaneous formation of electrical ohmic contacts to silicon carbide (SiC) semiconductor having donor and acceptor impurities (n- and p-type doping, respectively) is disclosed. The innovation provides for ohmic contacts formed on SiC layers having n- and p-doping at one process step during the fabrication of the semiconductor device. Further, the innovation provides a non-discriminatory, universal ohmic contact to both n- and p-type SiC, enhancing reliability of the specific contact resistivity when operated at temperatures in excess of 600.degree. C.

Okojie, Robert S.↗
NASA NTRS2009

Electrostatic Switching in Vertically Oriented Nanotubes for Nonvolatile Memory Applications

We have demonstrated electrostatic switching in vertically oriented nanotubes or nanofibers, where a nanoprobe was used as the actuating electrode inside an SEM. When the nanoprobe was manipulated to be in close proximity to a single tube, switching voltages between 10 V - 40 V were observed, depending on the geometrical parameters. The turn-on transitions appeared to be much sharper than the turn-off transitions which were limited by the tube-to-probe contact resistances. In many cases, stiction forces at these dimensions were dominant, since the tube appeared stuck to the probe even after the voltage returned to 0 V, suggesting that such structures are promising for nonvolatile memory applications. The stiction effects, to some extent, can be adjusted by engineering the switch geometry appropriately. Nanoscale mechanical measurements were also conducted on the tubes using a custom-built anoindentor inside an SEM, from which preliminary material parameters, such as the elastic modulus, were extracted. The mechanical measurements also revealed that the tubes appear to be well adhered to the substrate. The material parameters gathered from the mechanical measurements were then used in developing an electrostatic model of the switch using a commercially available finite-element simulator. The calculated pull-in voltages appeared to be in agreement to the experimentally obtained switching voltages to first order.

plasma-enhanced chemical vapor deposition (PECVD).↗
NASA NTRS2019

Advanced Modular Power System Electronics Enclosure Thermal Testing

An analysis was set up to model the temperature of the advanced modular power system (AMPS) power distribution cards when installed within the electronics enclosure case. The analysis was used to determine the steady-state temperature distribution of the cards within the case. To verify the analysis, an experiment was set up and conducted to simulate the operation of the cards within the enclosure. Four tests were conducted. The tests varied the position of the cold plate and evaluated the use of a thermal compound to reduce the contact resistance between the joints within the thermal path between the cards and the cold plate. Three of the four cases examined showed very good agreement between the analysis and the experiment with a less than 1-percent variation in the predicated temperatures determined through the analysis and the experimentally derived temperatures. In the remaining case, the difference between the analysis and experiment was approximately 12 percent. Both the experiment and analysis showed that the modular power conditioning cards can be maintained within their desired maximum operating temperature range of 40 to 45 °C through thermal conduction to a cold plate when operating with their estimated maximum heat output of 16 W per card.

Colozza, Anthony J.↗
NASA NTRS2005

Performance test results of a skutterudite-based unicouple with a metallic coating

A performance test of a Skutterudite-based unicouple (MAY-04) with a metallic coating to suppress the sublimation of antimony from the legs near the hot junction is performed in vacuum (~ 9 x10-7 torr) for ~ 2,000 hours at hot and cold junction temperatures of 892.1 + 11.9 K and 316.1 + 5.5 K, respectively. The p-leg is made of CeFe3.5Co0.5Sb12 and the n-leg is made of CoSb3. Presented are the measured voltage-current characteristics, electrical power, open-circuit voltage, and Seebeck coefficients of the legs as functions of cumulative test time. Also presented is the estimate of the conversion efficiency, shortly (~ 96 hrs) after the start of test. To demonstrate the effectiveness of the metallic coating, the measurements for MAY-04 are compared with those of two uncoated unicouples of the same leg materials (MAR-03 and JUN-03), which had been tested earlier. The cross-sectional areas of the legs in MAY-04 are larger than those in MAR-03 and JUN-03, tested in argon cover gas at ~ 0.051-0.068 MPa for 450 and 1200 hours, respectively. The open circuit voltage, Voc (204 mV) of MAY-04 at Beginning-Of-Test (BOT) is almost the same as that of MAR-03, but higher than that of JUN-03 (~180 mV). Although the argon gas effectively decreased antimony loss from legs of MAR-03 and JUN-03, marked degradations in performance occurred with time in these tests. Conversely, the metallic coating in MAY-04 effectively reduced the performance degradation with cumulative test time. The estimated peak efficiency of MAY-04, shortly after BOT (10.65%) is only ~ 0.37 percentage point lower than the theoretical value, assuming zero side heat losses and zero contact resistance per leg. The peak power of MAY- 04 decreased by only ~12%, from its BOT value of ~1.6 We to ~ 1.4 We after ~ 2,000 of cumulative testing

Caillat, Thierry↗
DOE OSTI2020

Fabrication of stable electrode/diffusion barrier layers for thermoelectric filled skutterudite devices

Disclosed are methods for the manufacture of n-type and p-type filled skutterudite thermoelectric legs of an electrical contact. A first material of CoSi2 and a dopant are ball-milled to form a first powder which is thermo-mechanically processed with a second powder of n-type skutterudite to form a n-type skutterudite layer disposed between a first layer and a third layer of the doped-CoSi2. In addition, a plurality of components such as iron, and nickel, and at least one of cobalt or chromium are ball-milled form a first powder that is thermo-mechanically processed with a p-type skutterudite layer to form a p-type skutterudite layer “second layer” disposed between a first and a third layer of the first powder. The specific contact resistance between the first layer and the skutterudite layer for both the n-type and the p-type skutterudites subsequent to hot-pressing is less than about 10.0 μΩ·cm2.

Jie, Qing↗
DOE OSTI2024

Screen-Printed Complex Ag Inks for Si HJT Metallization

Metallization using reactive metal inks has recently attracted significant research interest due to its advantages in cost of materials and manufacturing, while still achieving performance comparable to traditional fire-through particle pastes. Here, we present for the first time the use of reactive silver (Ag) inks via industrial screen-printing and inkjet printing methods for the metallization of different Si surfaces used in tunneling oxide passivating contacts (TOPCon) and Silicon heterojunction (SHJ) solar cells. Printed Ag lines exhibit a conductivity of ~5 Mu O·cm, which is approximately 3 times that of bulk Ag (1.59 µO·cm). The printed metal has a thickness of ~0.5-1.5 Mu m, an order of magnitude smaller than the current fire-through metal finger thickness (~15 Mu m). Contact resistivity measurements of the screen-printed and inkjet-printed samples on a transparent conducting oxide (TCO) surface show a very low value of ~0.2-12 mO·cm 2. Photoluminescence images of the metallized samples demonstrate minimal surface passivation degradation compared to the non-metallized areas (?iVoc <3.5 mV). Scanning electron microscopy images (SEM) reveal the structure of the printed metals on the Si surfaces as porous but much denser than fire-through Ag by nanoparticle paste. In the final presentation, we will showcase our results of printing these reactive Ag inks on high-efficiency heterojunction and TOPCon solar cells with full-area M6 wafers. Additionally, the adhesion of these reactive Ag inks on different Si surfaces according to ASTM D3359-17, as well as the performance of solar cells after standard IEC 61215 freeze/thaw and damp heat tests, will be presented. These new metal inks show promising potential as an alternative to the currently dominant particle-based pastes, offering lower Ag consumption and lower processing temperatures without compromising performance.

heterojunction solar cells↗
DOE OSTI2024

Thermal diode and thermal switch for bi-directional heat transfer in building envelopes

The present disclosure relates to a directional heat transfer using thermal control devices, including a dual phase change thermal diode and an active contact-based thermal switch. The thermal diode includes a positive temperature coefficient switching material and a negative temperature coefficient switching material arranged in series. The thermal switch includes two thermally conducting surfaces which may be moved to contact (i.e., having a distance between them of substantially zero) creating minimal thermal contact resistance. Both thermal control devices may be used to control heat flow into and/or out of a building.

Kishore, Ravi Anant↗
DOE OSTI2022

Local nm-Scale Imaging of Electrical Contact for Series Resistance Degradation of Silicon Solar Cells

We report on an electrical conduction mechanism for series resistance (Rs) degradation observed in a utility scale solar farm by nm-scale imaging of the local resistance at the Ag/Si interface of c-Si cell front metallization. Our previous work showed that the I-V measurement of individual cells demonstrated exclusively the cell Rs degradation, and the "beads pattern" of electroluminescence indicated the degradation at the Ag grid of front metallization. Scanning spreading resistance microscopy (SSRM) imaging, which is based on the contact mode of atomic force microscopy and taken on the cross-sections of Ag/Si contact, revealed the electrical conduction pathway of Ag particles in point or small area contact with Si cell emitter. The SSRM results illustrated that the number of electrical contacts in the degraded cell decreased largely compared with the unaffected cell, demonstrating the direct cause of the Rs degradation. This reduction in electrical contact in the degraded cell could be caused by a structural change in the Ag grid during long-term field service: The Ag particles in contact with Si aggregate into the Ag bulk and a highly resistive ceramic oxide is formed in a "belt" shape at the Ag/Si interface. This resistive belt with a thickness of ~1 m blocks the current conduction from cell emitter to the Ag grid. The degraded cell shows both a morphological and chemical difference in the screen-printed finger contact compared to the unaffected cell, which likely caused the different degradation susceptibility during the long-term field service. Our results demonstrate an example of the multi-scale characterization approach for understanding photovoltaic degradation mechanisms.

ENGINEERING,SOLAR ENERGY↗
DOE OSTI2024

Properties of photocurrent and metal contacts of highly resistive ultrawide bandgap semiconductors

Ultrawide bandgap (UWBG) semiconductors inherently exhibit very high electrical resistivities. This property presents not only challenges in probing their electrical transport properties but also difficulties to fabricate, understand, and characterize the electrical properties of metal contacts on these materials. Here, we report the measurements and analysis of the applied electric field dependence of photocurrent to reveal the effect of metal contacts on the transport properties of highly resistive h-BN. Our results indicate that even for h-BN with a room temperature resistivity as high as 1014 Ω cm, the as-deposited metal contact is not a completely blocking type as commonly assumed in previous analyses for other large bandgap insulating materials. By modifying the boundary condition between the metal/semiconductor interface, a quantitative description has been obtained, which can be used to determine if the metal contact is Ohmic or blocking type. This quantitative description should be applicable to all UWBG semiconductors with extremely high electrical resistivities. The work also provides a better understanding of how the metal contact type affects the transport properties of UWBG semiconductors in general.

Physics↗