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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 397 records · Page 22
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Low voltage drop tunnel junctions grown monolithically by MOCVD

Tunnel junction devices grown monolithically by metal organic chemical vapor deposition were optimized for minimization of the tunnel junction voltage drop. Here, two device structures were studied: an all-GaN homojunction tunnel junction and a graded InGaN heterojunction-based tunnel junction. This work reports a record-low voltage drop in the graded-InGaN heterojunction based tunnel junction device structure achieving a de-embedded tunnel junction voltage drop of 0.17 V at 100 A/cm 2 . The experimental data were compared with a theoretical model developed through technology computer-aided design (TCAD) simulations that offer a physics-based approach to understanding the key components of the design space, which lead to a more efficient tunnel junction.

42 ENGINEERING↗
DOE OSTI2022

Characterization of self-magnetic pinch radiographic diode performance on RITS-6 at Sandia National Laboratories. II. Coupling between the inductive voltage adder and the SMP load

The self-magnetic pinch (SMP) diode is a type of radiographic diode used to generate an intense electron beam for radiographic applications. At Sandia National Laboratories, SMP was the diode load for the six-cavity radiographic integrated test stand inductive voltage adder (IVA) driver operated in a magnetically insulated transmission line (MITL). The MITL contributes a flow current in addition to the current generated within the diode itself. Extensive experiments with a MITL of 40Ω load impedance [T. J. Renk et al., Phys. Plasmas 29, 023105 (2022)] indicate that the additional flow current leads to results similar to what might be expected from a conventional high-voltage interface driver, where flow current is not present. However, when the MITL flow impedance was increased to 80 Ω, qualitatively different diode behavior was observed. This includes large retrapping waves suggestive of an initial coupling to low impedance as well as diode current decreasing with time even as the total current does not. A key observation is that the driver generates total current (flow + diode) consistent with the flow impedance of the MITL used. The case is made in this paper that the 80Ω MITL experiments detailed here can only be understood when the IVA-MITL-SMP diode is considered as a total system. Additionally, the constraint of fixed total current plus the relatively high flow impedance limits the ability of the diode (whether SMP or other type) to act as an independent load. An unexpected new result is that in tracking the behavior of the electron strike angle on the converter as a function of time, we observed that the conventional cIV x “Radiographic” radiation scaling (where x~2.2) begins to break down for voltages above 8 MV, and cubic scaling is required to recover accurate angle tracking.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2022

III-Nitride p-down green (520 nm) light emitting diodes with near-ideal voltage drop

We demonstrate p-down green emitting LEDs with low turn-on voltage enabled by efficient tunnel junctions. Due to the polarization field alignment in the (In,Ga)N/GaN interface with the p-down orientation, the electrostatic depletion barrier for electron and hole injection is reduced when compared with the conventional p-up LEDs. A single (In,Ga)N/GaN heterostructure quantum well active region with a GaN homojunction tunnel junction exhibited very low forward operating voltage of 2.42 V at 20 A/cm 2 with a peak electroluminescence emission wavelength of 520 nm for current densities above 100 A/cm 2 . Furthermore, the bottom tunnel junction with minimal voltage drop enabled excellent hole injection into the bottom p-GaN layer.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Lattice engineering of high-entropy olivine-type lithium metal phosphate as high-voltage cathodes

Engineering of high-entropy cathode materials for lithium-ion batteries has been actively pursued owing to the outstanding conductivity of high-entropy materials benefited from the maximum entropy and unique antisite disordering structure. Olivine lithium metal phosphates such as LiMnPO 4 and LiNiPO 4 feature high working voltages but low capacities due to their insulation nature. Here in this work, the synthesis of the high-entropy lithium metal phosphate materials (HELMPs) is realized by combining mechanochemistry with a calcination method. By regulating lattice of HELMPs, the high-entropy Li(Mn 0.35 Fe 0.35 Co0.1Mg 0.1 Ca 0.1 )PO 4 reveals three typical high-voltage plateaus in charge–discharge curves corresponding to the redox of Fe, Mn, and Co in the voltage range of 2.0–4.9 V vs Li + /Li, and a much higher initial capacity than LiMnPO 4 (104 vs 15 mAh g -1 ).

25 ENERGY STORAGE↗
DOE OSTI2021

Voltage and cathode emission mechanisms of a magnetized, constricted, orbiting plasma in helium 6.7–850 Pa

Abstract We present a semiquantitative description of several important properties of a magnetized cold-cathode plasma in helium over a wide pressure range 6.7–850 Pa. We focus on the ‘constricted orbiting’ mode where the plasma attaches to the cathode as a moving ‘dot’ and the voltage and rate of cathode erosion are both unusually low. We propose that the low plasma voltage and observed motion of the plasma adjacent to the cathode can be attributed to field emission as the source of electrons from the cathode, a process that is aided by the charging of an oxide film by ions. We find that the observed dependence of plasma voltage on pressure is consistent with the assumption that the axial electric field must increase in regions of strong crossed magnetic field to maintain current continuity.

Physics↗
DOE OSTI2023

Finite-time correlations boost large voltage angle fluctuations in electric power grids

Abstract Decarbonization in the energy sector has been accompanied by an increased penetration of new renewable energy sources in electric power systems. Such sources differ from traditional productions in that, first, they induce larger, undispatchable fluctuations in power generation and second, they lack inertia. Recent measurements have indeed reported long, non-Gaussian tails in the distribution of local voltage frequency data. Large frequency deviations may induce grid instabilities, leading in worst-case scenarios to cascading failures and large-scale blackouts. In this article, we investigate how correlated noise disturbances, characterized by the cumulants of their distribution, propagate through meshed, high-voltage power grids. For a single source of fluctuations, we show that long noise correlation times boost non-Gaussian voltage angle fluctuations so that they propagate similarly to Gaussian fluctuations over the entire network. However, they vanish faster, over short distances if the noise fluctuates rapidly. We furthermore demonstrate that a Berry–Esseen theorem leads to the vanishing of non-Gaussianities as the number of uncorrelated noise sources increases. Our predictions are corroborated by numerical simulations on realistic models of power grids.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2021

Dynamics of voltage-driven oscillating insulator-metal transitions

Recent experiments demonstrated emerging alternating insulator and metal phases in Mott insulators actuated by a direct bias voltage, leading to oscillating voltage outputs with characteristic frequencies. Here, we develop a physics-based nonequilibrium model to describe the dynamics of oscillating insulator-metal phase transitions and experimentally validate it using a VO 2 device as a prototype. The oscillation frequency is shown to scale monotonically with the bias voltage and series resistance and terminate abruptly at lower and upper device-dependent limits, which are dictated by the nonequilibrium carrier dynamics. Here, we derive an approximate analytical expression for the dependence of the frequency on the device operating parameters, which yields a fundamental limit to the frequency and may be utilized to provide guidance to potential applications of insulator-metal transition materials as building blocks of brain-inspired non-von Neumann computers.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Voltage-controlled long-range propagation of indirect excitons in a van der Waals heterostructure

Indirect excitons (IXs), also known as interlayer excitons, can form the medium for excitonic devices whose operation is based on controlled propagation of excitons. Here, a proof of principle for excitonic devices was demonstrated in GaAs heterostructures where the operation of excitonic devices is limited to low temperatures. IXs in van der Waals transition-metal dichalcogenide (TMD) heterostructures are characterized by high binding energies making IXs robust at room temperature and offering an opportunity to create excitonic devices operating at high temperatures suitable for applications. However, a characteristic feature of TMD heterostructures is the presence of moiré superlattice potentials, which are predicted to cause modulations of IX energy reaching tens of meV. These in-plane energy landscapes can lead to IX localization, making IX propagation fundamentally different in TMD and GaAs heterostructures and making uncertain whether long-range IX propagation, sufficiently long to allow for creating elaborate excitonic devices and circuits, can be realized in TMD heterostructures. In this work, we realize long-range IX propagation with the 1/e IX luminescence decay distances reaching 13 microns in a MoSe 2 /WSe 2 heterostructure. We trace the IX luminescence along the IX propagation path. In the presented TMD materials, the long-range IX propagation occurs up to ~50 K. This is a step toward the room temperature operation, which can be realized in TMD heterostructures due to the high IX binding energy. We also realize control of the long-range IX propagation by voltage. The IX luminescence signal in the drain of an excitonic transistor is controlled within 40 times by gate voltage. The control of the IX propagation in the MoSe 2 /WSe 2 heterostructure is governed by new mechanisms, beyond the mechanism for controlling IX transport by an energy barrier to IX propagation (or a trap for IXs) created by the gate electrode, known since the studies of GaAs heterostructures. We discuss the origin of the voltage-controlled long-range IX propagation in the MoSe 2 /WSe 2 heterostructure, in particular, the electric-field control of the moiré potential.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Giant nonreciprocity of current-voltage characteristics of noncentrosymmetric superconductor–normal metal–superconductor junctions

Here we develop a theory of nonreciprocal current-voltage (I-U) characteristics in noncentrosymmetric superconductor-normal metal-superconductor junctions. We show that at small voltages the nonreciprocal features of the I-U characteristics can be expressed entirely in terms of the dependence of the nonreciprocal part of the quasiparticle density of states in the normal metal part of the junction on the order parameter phase difference chi across the junction. The amplitude of the nonreciprocity in this regime is proportional to the inelastic quasiparticle relaxation time $\tau_{in}$, and can be much larger than that in normal materials, where it is proportional to the elastic relaxation time $\tau_{el}$. At low bias the I-U characteristics possess additional symmetry not present in normal conductors; they remain invariant under simultaneous reversal of current, voltage, and the magnetic field.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

An Inrush Current Limit Method for SiC-based Multi-level Grid-connected Converter During Low-Voltage Ride-Through

Low-voltage ride-through is one of the grid requirements for grid-connected converters, and during the transient of grid voltage change, a large inrush current could be induced due to the control delay of the converter. This inrush current is more severe in SiC-based multi-level converters due to the small filter inductance, which is selected based on harmonics consideration. In this paper, a PWM mask method is used to limit the inrush current of a cascaded H-bridge-based grid-connected converter during the transient of grid voltage change. Simulation and experiment results are provided to validate this method.

Li, Haiguo↗
DOE OSTI2022

Farm-level Interactions Study of a Novel Tri-port Soft-switching Medium-Voltage String Inverter (MVSI) based Large-scale PV-Plus-Storage Farms

A medium-voltage photovoltaic power conversion unit supported by battery based on a novel topology of soft switching solid state transformer is presented in this paper. It can reduce the Levelized Cost of Energy (LCOE) of PVS farm in an extended degree. However, its capability to provide grid-support services, such as frequency response, reactive power support, etc, have not been demonstrated. A series/parallel combination of these modules form a large 20 MVA solar farm. To validate them with reduced computation burden, a small-signal model of MVSI is firstly derived and validated in this paper. The model has been validated to match the full-switch model in both steady-state and dynamic conditions. Next, a farm-level simulation based on the proved small-signal model was implemented to demonstrate grid-support services. Real irradiation date from NREL is used to show the operational capabilities of the system. As a result, the overall farm is simulated based on MATLAB/Simulink domain to check the performance for various cases namely: power transfer from dc-ac side, reactive power support during grid voltage sag and utilization of battery during grid voltage disturbance or partial shading over PV panels.

14 SOLAR ENERGY↗
DOE OSTI2022

A PWM Strategy for Cascaded H-bridges to Reduce the Loss Caused by Parasitic Capacitances of Medium Voltage Dual Active Bridge Transformers

In this paper, to reduce the power loss caused by the parasitic capacitances of medium voltage medium frequency transformers in a two-stage dc/ac converter, including a dual active bridge (DAB)-based dc/dc stage and a cascaded H-bridge (CHB)-based dc/ac stage, a PWM strategy is proposed for the dc/ac stage. For each H-bridge, by shifting the high switching frequency to one half-bridge and having the other half-bridge switching at the fundamental frequency of the ac voltage, equivalent frequencies of transformer terminal-to-ground voltages are reduced. As a result, the frequencies of charging and discharging current to the parasitic capacitance are reduced, and therefore the loss caused by the parasitic capacitances is reduced. Compared to the conventional phase-shift PWM, the proposed PWM strategy can reduce the parasitic capacitance loss by about 75%. Experimental test results of one phase in the 13.8 kV/ 100 kW converter prototype are provided to validate the approach.

Li, Haiguo↗
DOE OSTI2022

Medium Voltage Energy Hub Based on Multilevel Cascaded H Bridge-Dual Active Bridge Back-to-Back Converter for Power Distribution Feeders Interconnection and Multiple Simultaneous Grid Services

This paper presents a medium voltage energy hub based on a modular design of a multilevel cascaded H bridge (CHB)-dual active bridge (DAB) converter. The energy hub composed of the two CHB-DAB modules with a back-to-back topology can be utilized as a grid interconnection component between distribution feeders. The energy hub can provide multiple simultaneous grid services such as voltage regulation, power factor correction, as well as active power flow control between the connected feeders, contributing to grid flexibility, efficiency, reliability, and resilience. Circuit structure and control schemes for the energy hub including both local controllers for each converter and outer loop controllers are proposed to enable simultaneous grid services with coordination to prevent the overloading of the hub. To validate the performance of the hub, the hub system is interconnected between two IEEE 4-bus feeders and provides voltage regulation for both feeders, while controlling active power flow between them. The system and the feeders are implemented in Real-Time Digital Simulator (RTDS) for real-time simulation verification.

Choi, Jongchan↗
DOE OSTI2023

A Voltage Injection-Based Current Harmonics Suppression Strategy for Six-Phase PMSM With Nonsinusoidal Back EMF

This article presents a voltage injection-based current harmonic minimization method for wide bandgap device-based six-phase permanent magnet synchronous machine (PMSM) drives. The presence of low-order harmonics is common in the back EMF of PMSMs with low slot and high pole numbers. The back EMF harmonics generate low-order harmonic currents that increase torque ripples. Furthermore, zero-sequence current (ZSC) is also observed if all six phases are connected to a common neutral point. ZSC does not affect the torque ripple but reduces the system efficiency. A special technique is required to reduce ZSC for variable speed drives as direct ac component to synchronous reference frame (SRF) dc transformation is not possible for ZSC. In this article, a voltage injection-based current harmonics reduction method is proposed. The injected harmonic voltage coefficients are calculated from the harmonic estimations of back EMF and updated using closed-loop harmonic compensators to improve steady-state performance. For ZSC reduction, third harmonics power controller, and for 6n ± 1 (n = 1, 2,...) order harmonic current reduction, SRF current controllers are presented in this article. Furthermore, the current harmonics minimization method is experimentally verified using a GaN-based three-level active neutral point clamped inverter-driven six-phase PMSM.

42 ENGINEERING↗
DOE OSTI2023

Low Threshold, Long Wavelength Interband Cascade Lasers With High Voltage Efficiencies

Here, we report on the substantial advancement of long wavelength InAs-based interband cascade lasers (ICLs) utilizing advanced waveguides formed from hybrid cladding layers and targeting the 10-12 µm wavelength region. Modifications in the hole injector have improved carrier transport in these ICLs, resulting in significantly reduced threshold voltages (V th ) as low as 3.62 V at 80 K. Consequently, much higher voltage efficiencies were observed, peaking at about 73% at 10.3 µm and allowing for large output powers of more than 100 mW/facet. Also, low threshold current densities (J th ) of 8.8 A/cm 2 in cw mode and 7.6 A/cm 2 in pulsed mode near 10 µm were observed; a result of adjustments in the GaInSb hole well composition intended to reduce the overall strain accumulation in the ICL. Furthermore, an ICL from the second wafer operating at a longer wavelength achieved a peak voltage efficiency of 57% at 11.7 µm, with a peak output power of more than 27 mW/facet. This ICL went on to lase beyond 12 µm in both cw and pulsed modes, representing a new milestone in long wavelength coverage for ICLs with the standard W-QW active region.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

Impedance-Aware Graph Convolutional Networks for Voltage Estimation in Active Distribution Networks

Voltage estimation plays a key role in ensuring the effective control and reliability of distribution networks. However, traditional machine learning methods often fail to capture the details of the distribution network’s topology. To overcome this challenge, graph convolutional networks (GCN) have emerged as an alternative. Graph convolutional networks inherently capture the topology of the grid, utilizing correlations to achieve precise voltage estimation. Other machine learning models and conventional GCNs fail to account for the distribution line characteristics found in the real world, limiting their effectiveness. This paper proposes an advanced variant of GCN called the Impedance-Aware Graph Convolutional Network (IA-GCN). The IA-GCN layer incorporates the magnitude of the impedance into the graph convolution mechanism, allowing it to capture topological nuances and provide valuable insights into node interrelationships by considering impedance as an intrinsic dimension. The performance of the IA-GCN layer is then compared with that of GCN and GraphSAGE layers through a surrogate model for voltage estimation. The performance analysis demonstrates that IA-GCN outperforms GCN by reducing the MAE by 87.55% and improving the R-squared value by 98%.

Ravi, Abhijith↗
DOE OSTI2025

Enhancement-Mode GaN Monolithic Bidirectional Switch With Breakdown Voltage Over 3.3 kV

Here, this work demonstrates a GaN enhancement-mode monolithic bidirectional switch (MBDS) with breakdown voltage (BV) higher than 3.3 kV in both polarities. This MBDS is realized on a dual p-GaN gate high electron mobility transistor (HEMT) platform on sapphire substrate. It features a novel dual junction termination extension design for electric field management, which is built on the p-GaN layer in the gate stack and does not require epitaxial regrowth. The GaN MBDS exhibits symmetric on-state characteristics in both directions with a threshold voltage (V th ) of 0.6 V and a low specific on-resistance (R on,sp ) of 5.6 m Ω · cm2. This device presents the highest BV, as well as one of the best BV and R on,sp trade-offs, in all the reported MBDS devices. The R on,sp is lower than the performance limit of conventional BDS realized by two discrete devices. This 3.3 kV GaN MBDS opens the door for developing new circuit topologies and advancing system performance in medium-voltage power electronics.

42 ENGINEERING↗
DOE OSTI2021

Using Distributed Dynamic Voltage Restorers to Improve the Frequency Stability of Low-Inertia Networked Microgrids

This paper elucidates the novel concept of using distributed dynamic voltage restorers (DVRs), which are traditionally used to compensate for voltage sags, to improve the frequency stability of low-inertia networked microgrids. During frequency transients, the distributed DVRs rapidly regulate load voltages within an acceptable range, resulting in a fast change of load power consumption and helping improve frequency stability. To enable large-scale network simulation, a phasor-based model of DVRs is developed and validated against real data from a commercially available device. Finally, simulation results of a modified IEEE 123-node test feeder that comprises three microgrids and six DVRs verify the effectiveness of the proposed method.

Du, Wei↗