SEARCH · Engineering Papers

Results for “switches”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 397 records · Page 22

All sources NASA NTRS DOE OSTI

DOE OSTI2021

Voltage-controlled spin–orbit torque switching in W/CoFeB/MgO

Voltage control of magnetism and spintronics have been highly desirable but rarely realized. In this work, we show voltage-controlled spin–orbit torque (SOT) switching in W/CoFeB/MgO films with perpendicular magnetic anisotropy (PMA) with voltage administered through SrTiO 3 with a high dielectric constant. We show that a DC voltage can significantly lower PMA by 45%, reduce switching current by 23%, and increase the damping-like torque as revealed by the first- and second-harmonic measurements. These are characteristics that are prerequisites for voltage-controlled and voltage-select SOT switching spintronic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2024

Development and performance evaluation of active insulation systems using solid-state thermal switches

Traditional building envelopes have passive insulation systems that cannot respond to dynamic changes in the environment. An Active Insulation System (AIS) consists of Active Insulation Materials (AIMs) that dynamically vary the thermal conductivity of the insulation system. Several researchers have evaluated the impact of AIS on building thermal and energy performance by using simulation tools. Up to 70% savings in annual heating and cooling energy and significant reductions in peak demand have been predicted for some climates with wall systems employing AIS. However, materials and assembly development still need a cost-effective product that achieves the required performance. Here, in this study, we present the process of developing an AIS that we will install in a test hut for its performance evaluation. Minimum performance criteria of the AIS system are developed based on R-low/R-high ratio, required time and efficiency to switch states, and cost estimates. The following steps during this study are creating the concept to meet the requirements, predicting the performance via simulations, developing the experimental setup for bench-scale testing, and finally, constructing a full-scale wall assembly and monitoring the performance when exposed to environmental chamber tests. The selected approach uses off-the-shelf products to create an AIS that can switch R-value between 0.98 ft 2 ·°F·h/BTU (0.173 m 2 ·K/W) and 5.81 ft 2 ·°F·h/BTU (1.02 m 2 ·K/W) and have a switching time of less than one minute between R-high and R-low.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

DOE OSTI2022

Study of carbon nanotube embedded honey as a resistive switching material

In this paper, natural organic honey embedded with carbon nanotubes (CNTs) was studied as a resistive switching material for biodegradable nonvolatile memory in emerging neuromorphic systems. CNTs were dispersed in a honey-water solution with the concentration of 0.2 wt% CNT and 30 wt% honey. The final honey-CNT-water mixture was spin-coated and dried into a thin film sandwiched in between Cu bottom electrode and Al top electrode to form a honey-CNT based resistive switching memory (RSM). Surface morphology, electrical characteristics and current conduction mechanism were investigated. The results show that although CNTs formed agglomerations in the dried honey-CNT film, both switching speed and the stability in SET and RESET process of honey-CNT RSM were improved. The mechanism of current conduction in CNT is governed by Ohm’s law in low-resistance state and the low-voltage range in high-resistance state, but transits to the space charge limited conduction at high voltages approaching the SET voltage.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Large Spin-Orbit-Torque Efficiency and Room-Temperature Magnetization Switching in Sr Ir O 3 / Co-Fe-B Heterostructures

Spin-orbit-torque (SOT) switching is a potentially energy-efficient mechanism by which electrical current can control magnetization. We demonstrate room-temperature SOT switching in nanometer-thick Co⁢Fe⁢B/Sr⁢Ir⁢O 3 bilayers despite the amorphous nature of CoFeB and the interface. This behavior is attributed to the large spin Hall angle in Sr⁢Ir⁢O 3 as well as high spin transmission at the interface that contribute to the SOT efficiency ξ SOT . Our bilayers exhibit large ξ SOT of up to 1.4 and effective spin Hall conductivity of 0.9 ×10 5 (ℏ/2e)Ω –1 ⁢m –1 . In our bilayers, we observe unidirectional magnetoresistance and current-induced magnetization switching with a low critical current density of 1.38 ×10 10 A/m 2 at room temperature. Finally, our results are promising for heterostructures combining technologically relevant CoFeB with high spin-orbit-coupling oxides.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

DOE OSTI2020

Antiferromagnetic domain switching modulated by an ultrathin Co interlayer in the Fe/Co/CoO/MgO(001) system

Using a combination of hysteresis loop, Kerr microscope, and x-ray magnetic circular dichroism measurements, in this study we investigated the antiferromagnetic (AFM) domain switching process modulated by the sub-nm thick Co inserting layer in a single crystalline Fe/Co/CoO/MgO(001). The CoO AFM domain switching occurs at lower temperature for the thicker Co interlayer, and the activation energy barrier of CoO AFM domain switching decreases as the Co interlayer thickness increases. The exchange coupling strength between the AFM spins in CoO layer and the ferromagnetic spins in the Fe/Co bilayer is found to be independent of the Co layer thickness. Our results suggest an approach to modulate the dynamic properties of AFM domains with an interfacial modification.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2020

Modular Isolated Soft-Switching Medium Voltage String Inverter for Large-Scale PV Farm

This paper presents a single-stage modular isolated soft-switching medium voltage string inverter (MVSI) with tri-port configuration to interconnect PV and storage to medium voltage (MV) grid. The modular MVSI provides advanced functionalities such as energy storage elements integration without additional converters, connection to MV grid resulting in lower distribution losses in the PV farm, high-frequency galvanic isolation, independent control of PV, storage and grid power, high modularity and scalability. The topology of the MVSI, operation principle and model-predictive priority-switching (MPPS) control to achieve fast dynamic balancing across stacked modules are discussed. The independent power control is validated in PLECS simulation and the operation of stacked MVSI with MPPS control is verified through Hardware-in-the-loop (HIL) simulation. Here, the hardware prototype of 25 kVA MVSI building block is developed. 18 kW experimental results of single building block verifying tri-ports operation and 20 kW experimental results of two modules stacked operation are presented. A clean sinusoidal waveform with negligibly low THD in both tests is obtained. A low dv/dt of <; 1kV/us and soft-switching are achieved.

30 DIRECT ENERGY CONVERSION↗

DOE OSTI2023

Comprehensive Efficiency Analysis of Seven-Switch Current-Source Inverter Based on Voltage-Boost Function and Genetic Algorithm

This paper investigates the voltage-boost features of the emerging seven-switch current-source inverter (H7-CSI) to improve the efficiency of the CSI-based motor drive system. The switching transient and power loss model of the H7-CSI topology during voltage-boost operation are analyzed in detail. The effects of the boost function on the switching and conduction loss of the H7-CSI topology are investigated. A genetic algorithm has been introduced that makes it possible to optimize the H7-CSI’s modulation index to minimize its power loss. Experimental results for the H7-CSI unit show that this optimization can reduce the power loss by 10.6%.

42 ENGINEERING↗

DOE OSTI2025

Dopant Optimization of Donors in Semiconductor Opening Switches to Eliminate Prepulse

Semiconductor opening switches are solid-state devices capable of delivering nanosecond, hundreds of kilovolts pulses by interrupting kiloamps of current. The interruption of the current occurs in a moderately doped p-region when a high electric field region (HFR) is formed. The HFR occurs because the reverse pumping current cannot be supported by the saturation velocity and majority carrier concentration of the doping level. However, the donor profile also significantly affects the pulse performance. A secondary prepulse occurs if a secondary HFR is formed at the interface of the background n-doping and N+ doping (X n ) . By moving the location of X n deeper into the diode, the effect of the prepulse is reduced. This article investigates the effect of the donor doping profile on the performance metrics of semiconductor opening switches through technology computer-aided design (TCAD) simulations and experimental results. Through a SILVACO TCAD optimization, we designed a P + /p/n - base/n/N + where the intersection of the moderate p-region and intrinsic n-base region (X p ) is at 160 μm and X n is at 220 μm. This profile is fabricated via silicon epitaxy. Experimentally, it is shown that a deep X n (220 μm) compared with a shallow X n (300 μm) reduces the rise time by >5× . In addition, the magnitude of current density during interruption affects the prepulse foot and pulse shape. At lower current densities without the graded donor profile, high peak voltages are not achieved. Comparing the experimental results to the TCAD simulations shows that the model is predictive under high-current densities in the semiconductor opening switch (SOS) regime.

nanosecond pulse power↗

DOE OSTI2026

Bistable Optical Semiconductor Switching Based on C-Doped GaN

Highly resistive gallium nitride (GaN) is an essential material for power optoelectronic applications. While carbon doping is widely used to achieve semi-insulating properties in GaN, the persistent photoconductivity (PPC) arising from deep-level defect traps remains a major obstacle for high-speed power switching. This study demonstrates a novel approach: leveraging the ultrahigh photoresponsivity of GaN:C (up to 2.1 A ⋅ cm/W ⋅ kV, surpassing alternatives such as GaN:Fe) and employing defect-selective optical control to effectively quench the PPC. By synchronizing a short infrared (1064 nm) quenching pulse with UV (385 nm) excitation in an epitaxially grown GaN:C layer on a heavily doped n-type GaN substrate, we achieve a dramatic reduction in photocurrent fall time by approximately 293× (from 470 to 1.6 μ s), increasing modulation bandwidth from 745 Hz to nearly 218 kHz. Here, this advancement not only establishes a new pathway for controlling PPC in GaN:C but also enables the practical integration of GaN:C in fast power switching devices. Enhanced modulation bandwidth, along with GaN:C excellent photoresponsivity, makes it a promising candidate for optically controlled high-voltage, high-power electronic systems, such as photoconductive semiconductor switches (PCSSs) used in pulsed-power drivers, high-power microwave (HPM) sources, and high-voltage gate drivers for wide bandgap (WBG) power electronics.

Carbon-dopped Gallium nitride (GaN:C)↗

DOE OSTI2020

Soft-Switching Solid-State Transformer With Reduced Conduction Loss

Solid-state transformers (SSTs) are a promising solution photovoltaic (PV), wind, traction, data center, battery energy storage system (BESS), and fast charging electric vehicle (EV) applications. The traditional SSTs are typically three-stage, i.e., hard-switching cascaded multilevel rectifiers and inverters with dual active bridge (DAB) converters, which leads to bulky passives, low efficiency, and high electromagnetic interference (EMI). This article proposes a new soft-switching solid-state transformer (S4T). The S4T has full-range zero-voltage switching (ZVS), electrolytic capacitor-less dc link, and controlled dv/dt, which reduces EMI. The S4T comprises two reverse-blocking current-source inverter (CSI) bridges, auxiliary branches for ZVS, and transformer magnetizing inductor as a reduced dc link with 60% ripple. Compared with the prior S4T, an effective change on the leakage inductance diode is made to reduce the number of the devices on the main power path by 20% for significant conduction loss saving and retain the same functionality of damping the resonance between the leakage and resonant capacitors and recycling trapped leakage energy. The conduction loss saving is crucial, being the dominating loss mechanism in SSTs. Importantly, the proposed single-stage SST not only holds the potential for high power density and high efficiency but also has full functionality, e.g., multiport dc loads integration, voltage regulation, and reactive power compensation, unlike the traditional single-stage matrix SST. The S4T can achieve single-stage isolated bidirectional dc–dc, ac–dc, dc–ac, or ac–ac conversion. It can also be configured input-series output-parallel (ISOP) in a modular way for medium-voltage (MV) grids. Hence, the S4T is a promising candidate for the SST. The full functionality, e.g., voltage buck–boost, multiport, etc., and the universality of the S4T for the dc–dc, dc–ac, and ac–ac conversion are verified through the simulations and experiments of two-port and three-port MV prototypes based on 3.3 kV SiC MOSFETs in dc–dc, dc–ac, and ac–ac modes at 2 kV.

14 SOLAR ENERGY↗

DOE OSTI2025

A Study on the Impact of Temperature-Dependent Ferroelectric Switching Behavior in 3D Memory Architecture

The flourishing development of neural networks that require exponentially growing amounts of data has presented an elevated demand for memory footprint. To address this, researchers have been exploring hardware accelerators with innovative memory architectures like 3D memory. These 3D memory architectures offer enhanced storage capacity and processing capabilities, at a cost of rising on-chip temperature during operation. Hafnium Zirconium Oxide (HZO) based Ferroelectric Random Access Memory (FeRAM) is a promising nonvolatile memory candidate in neural network hardware accelerators for its outstanding write performance and reliability. However, its implementation in the architecture regarding the temperature-dependent ferroelectric switching behavior has not been well studied. In this work, we study the thermal impacts on polarization switching through experimental devices and simulation results. We conduct the circuit and architecture-level simulations to showcase that one can exploit this temperature rise to reduce FeRAM's write voltage and write energy due to its unique temperature-activated polarization switching mechanisms. As the on-chip temperature increases to 351K (ambient temperature at 300K) due to neural network workloads, the access energy per bit can be reduced by 27.6% when a dynamic write voltage is applied.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Development of a 250 Degree C 15kV Supercascode Switch Using SiC JFET Technology

Tetra Corporation is developing a pulsed power drilling system for the geothermal industry. The system requires a high temperature switching technology to replace the existing technology based on Si thyristors with a temperature limit of 150 degrees C. This work focuses on the development of such switch based on a Supercascode configuration using SiC JFET technology. The development presented contains thermal models, packaging design and processes, circuit simulations and prototypes of both the Supercascode switch and the high temperature packaged SiC JFETs.

cascaded switch↗

NASA NTRS2016

Effects of Parasitic Reactance on Lattice Circuit Slotline Switch

A slotline lattice switch has recently been proposed and demonstrated. In that paper, ideal diode characteristics were assumed. In this paper, the effects of parasitic reactances, due to the diode and the wire bonds that connect it to the circuit, are investigated. The switch is compared to a traditional slotline switch with a single diode across the slot.

pin diode↗

NASA NTRS2017

Passive Gas-Gap Heat Switches for Use in Low-Temperature Cryogenic Systems

We present the current state of development in passive gas-gap heat switches. This type of switch does not require a separate heater to activate heat transfer but, instead, relies upon the warming of one end due to an intrinsic step in a thermodynamic cycle to raise a getter above a threshold temperature. Above this temperature sequestered gas is released to couple both sides of the switch. This enhances the thermodynamic efficiency of the system and reduces the complexity of the control system. Various gas mixtures and getter configurations will be presented.

Heat Switches↗

NASA NTRS2016

Effects of Parasitic Reactance on Lattice Circuit Slotline Switch

Lattice Circuit↗

NASA NTRS2017

Passive Gas-Gap Heat Switches for Use in Low-Temperature Cryogenic Systems

Gas-gap↗

DOE OSTI2025

Polarization Switching on the Open Surfaces of the Wurtzite Ferroelectric Nitrides: Ferroelectric Subsystems and Electrochemical Reactivity

Binary ferroelectric nitrides are promising materials for information technologies and power electronics. However, polarization switching in these materials is highly unusual. From the structural perspective, polarization reversal is associated with the change of the effective polarity at the surfaces and interfaces from N‐to‐M terminated, suggesting strong coupling between ferroelectric and chemical phenomena. Phenomenologically, macroscopic studies demonstrate the presence of complex time dependent phenomena including wake‐up. Here, in this study, the polarization switching using the multidimensional high‐resolution piezoresponse force microscopy (PFM) and spectroscopy is explored, detecting both the evolution of induced ferroelectric domain, electromechanical response, and surface deformation during first‐order reversal curve measurements. The presence of two weakly coupled ferroelectric subsystems are demonstrated and the bias‐induced electrochemical reactivity. The observed behaviors are very similar to the recent studies of other wurtzite system but additionally include electrochemical reactivity, suggesting the universality of these behaviors for the wurtzite binary ferroelectrics. These studies suggest potential of high‐resolution multimodal PFM spectroscopies to resolve complex coupled polarization dynamics in materials. Furthermore, these PFM based studies are fully consistent with the recent electron microscopy observations of the shark‐teeth like ferroelectric domains in nitrides. Hence, it is believed that these studies establish the universal phenomenological picture of polarization switching in binary wurtzite.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Dynamic Excitonic Beam Switching with Atomically‐Thin Binary Blazed Gratings

Abstract Beam steering metasurfaces are ultra‐compact optical coatings that offer on‐demand redirection of optical power to specific diffraction orders. To achieve this, spatial gradients are commonly introduced in the phase of light scattered by plasmon or Mie resonant nanoparticles within the metasurface grating's unit cell. However, these phase gradients are oftentimes difficult to tune post‐fabrication. Recently, excitons in monolayer 2D semiconductors have emerged as a new metasurface building block, due to their strong and electrically‐tunable resonant light‐matter interaction. These 2D excitonic metasurfaces offer the tantalizing prospect of beam switching within a single monolayer. Here, it is demonstrated how the 2D analog of binary blazed gratings enables such beam switching by mere nanopatterning of a large monolayer WS 2 , even though nanoscale ribbons of WS 2 do not support geometrical resonances. By introducing a gradient in the nanoribbon width within the metasurface unit cell, an amplitude gradient combined with a small phase gradient in the scattered fields results in asymmetric diffraction efficiencies. Using a scattered‐field analysis, it is shown that these gradients can be further engineered via interference effects with the substrate reflection. Finally, the electrical tunability of the exciton resonance is leveraged to achieve selective and dynamic beam switching with an atomically‐thin metasurface.

Guarneri, Ludovica [Van der Waals‐Zeeman Institute↗