Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “silicon processing”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 397 records · Page 22
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Ultrathin silicon oxide prepared by in-line plasma-assisted N 2 O oxidation (PANO) and the application for n-type polysilicon passivated contact

We develop a plasma-assisted nitrous-oxide (N 2 O) gas oxidation (PANO) method to prepare the ultrathin silicon oxide (SiO x ) for polysilicon (poly-Si) passivated contact. The effects of preparation conditions, including the substrate temperature, processing time, and plasma power, are studied. Afterwards, we integrate the PANO SiO x into the polysilicon passivated contact and optimize the passivation and contact performances. Excellent surface passivation with the n-type poly-Si and PANO SiO x on the n-type c-Si wafer is achieved by 880 °C annealing, which shows competitive passivation quality to the one with NASO SiO x . Champion implied open-circuit voltage (iV oc ) and single-sided recombination saturated current (J 0 ) reach 730 mV and 4.3 fA/cm 2 after crystallization; and they are further improved to 747 mV and 2.0 fA/cm 2 (3 × 10 15 cm -3 ) after subsequent AlO x /SiN x hydrogenation. Using transmission electron microscopy (TEM), we find that the thickness of PANO SiO x ranges 1.1–2.4 nm and the controlled nitric acid oxidized SiO x (NAOS) ranges 1.3–1.8 nm. The contact resistivity (ρ c ) is typically <10 mΩ cm 2 with the annealing temperature of >820 °C. Also, the crystallinity, phosphorous in-diffusion profile, and current-leaking density of the passivated contacts are investigated. In general, the PANO SiO x and in-situ doping amorphous silicon precursor can be fabricated in one PECVD system without additional equipment or transfer procedures, which is favorable for the high-efficiency, low-cost industrial manufacture.

14 SOLAR ENERGY↗
DOE OSTI2022

Fabrication of ultrathin suspended membranes from atomic layer deposition films

In this report, ultrathin films suspended as freestanding membranes are critical to many microelectronic and materials science applications. However, fabrication methods are currently limited in either their flexibility, due to material selectivity issues during the final membrane release, or their scalability. Here, we demonstrate a novel fabrication process for suspending ultrathin films with thicknesses as low as 4 nm and lateral dimensions up to 20 x 1000 μm from a variety of materials grown by atomic layer deposition. A silicon nitride membrane serves as the support for a sacrificial polymer layer and an ultrathin atomic layer deposition film which, after plasma etching, will form the membrane. The high chemical selectivity between atomic layer deposition-grown transition metal nitrides and oxides and the sacrificial polymer means that ultrathin films of a variety of materials can be released without damage using a single process. Electrically conductive titanium nitride membranes can be produced by this method and are of significant interest for electron microscopy applications. Electron transparency of titanium nitride membranes was found to be ~14% higher than silicon nitride of the same thickness, and of similar conductivity to graphite, meaning that ultrathin, conductive, and electron transparent membranes can be fabricated at scale. These membranes are ideal supports for electron and photon characterization techniques, as well as microelectromechanical system applications that require a conductive membrane.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Etching with electron beam-generated plasmas: Selectivity versus ion energy in silicon-based films

In the ideal case, plasma-enhanced atomic layer etching enables the ability to not only remove one monolayer of material but also leave adjacent layers undamaged. This dual mandate requires fine control over the flux of species to ensure efficacy, while maintaining an often arduously low ion energy. Electron beam-generated plasmas are well-suited for etching at low ion energies as they are generally characterized by highly charged particle densities (10 10 –10 11 cm –3 ) and low electron temperatures (<1.0 eV), which provide the ability to deliver a large flux of ions whose energies are <5 eV. Raising the ion energy with substrate biasing thus enables process control over an energy range that extends down to values commensurate with the bond strength of most material systems. In this work, we discuss silicon nitride etching using pulsed, electron beam-generated plasmas produced in argon-SF6 backgrounds. We pay particular attention to the etch rates and selectivity versus oxidized silicon nitride and polycrystalline silicon as a function of ion energy from a few eV up to 50 eV. Here, we find the blanket etch rate of Si 3 N 4 to be in the range of 1 A/s, with selectivities (versus SiO 2 and poly-Si) greater than 10:1 when ion energies are below 30 eV.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

In-pixel integration of signal processing and AI/ML based data filtering for particle tracking detectors

We present the first physical realization of in-pixel signal processing with integrated AI-based data filtering for particle tracking detectors. Building on prior work that demonstrated a physics-motivated edge-AI algorithm suitable for ASIC implementation, this work marks a significant milestone toward intelligent silicon trackers. Our prototype readout chip performs real-time data reduction at the sensor level while meeting stringent requirements on power, area, and latency. The chip is taped-out in 28nm TSMC CMOS bulk process, which has been shown to have sufficient radiation hardness for particle experiments. This development represents a key step toward enabling fully on-detector edge AI, with broad implications for data throughput and discovery potential in high-rate, high-radiation environments such as the High-Luminosity LHC.

Parpillon, Benjamin [Fermilab; Illinois U., Chicag↗
DOE OSTI2022

Evaluation of different getter substrates using two-dimensional gas chromatography with time of flight mass spectrometry

We report while understanding hydrogen uptake by organic based getters such as 1,4-bis(phenylethynyl)benzene (DEB) combined with a palladium(0)bis(dibenzylideneacetone) (Pd(dba) 2 ) catalyst is essential, another crucial element to understand is the decomposition of the DEB, Pd(dba) 2 , and/or substrate material. The breakdown of these materials may create unwanted volatiles, which may interact with and lead to deterioration of sensitive materials. Moreover, it is critical to understand if different substrates cause the getter and/or catalyst to degrade in different manners. Utilizing comprehensive two-dimensional gas chromatography (GC×GC) with time-of-flight mass spectrometry (TOFMS), the presence of volatiles located in the headspace of various DEB/Pd(dba) 2 getter substrates is examined. These samples include a getter infused silicone foam, a hydrogenated getter infused silicone foam, an activated carbon getter pellet, and a hydrogenated activated carbon getter pellet. Application of Fisher ratio (F-ratio) analyses lead to the identification of several compounds that are generated or consumed through the hydrogenation process. These include benzene derivatives such as bibenzyl, benzaldehyde, and vinyl benzoate in the activated carbon pellets and 1,5-diphenyl-3-pentanone, toluene, styrene, and 1–1'(2-pentene 1,5-diyl)bis benzene in the silicone foams, and alkane/alkene derivatives such undecane, 4-tridecene, and decane in the activated carbon pellets and 2,6-dimethyl undecane in the silicone foams. Further comparison of the different hydrogenated getter substrates (e.g. activated carbon pellet and silicone foam) indicates that the different substrates alter the decomposition products created from the degradation of the DEB and Pd(dba) 2 .

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

Thermal conductance of interfaces between titanium nitride and group IV semiconductors at high temperatures

Measuring the temperature dependence of material properties is a standard method for better understanding the microscopic origins for that property. Surprisingly, only a few experimental studies of thermal boundary conductance at high temperatures exist. This lack of high temperature data makes it difficult to evaluate competing theories for how inelastic processes contribute to thermal conductance. To address this, we report time domain thermoreflectance measurements of the thermal boundary conductance for TiN on diamond, silicon-carbide, silicon, and germanium between 120 and 1000 K. In all systems, the interface conductance increases monotonically without stagnating at higher temperatures. For TiN/SiC interfaces, G ranges from 330 to 1000 MW/m2-K, with a room temperature conductance of 750 MW/m2-K. The interface conductance for TiN/diamond ranges from 140 to 950 MW/m2-K. Notably, for all four interfacial systems, the conductance continues to increase with temperature even after all phonon modes in the vibrationally soft material are thermally excited. This observation suggests that inelastic processes are significant contributors to the thermal conductance in all four interfacial systems, regardless of whether the materials forming the interface are vibrationally similar or dissimilar. Our study fills a notable gap in the literature for how interfacial conductance evolves at high temperatures and tests burgeoning theories for the role of inelastic processes in interfacial thermal transport.

Physics↗
DOE OSTI2024

High-performance silicon photonic single-sideband modulators for cold-atom interferometry

The laser system is the most complex component of a light-pulse atom interferometer (LPAI), controlling frequencies and intensities of multiple laser beams to configure quantum gravity and inertial sensors. Its main functions include cold-atom generation, state preparation, state-selective detection, and generating a coherent two-photon process for the light-pulse sequence. To achieve substantial miniaturization and ruggedization, we integrate key laser system functions onto a photonic integrated circuit. Our study focuses on a high-performance silicon photonic suppressed-carrier single-sideband (SC-SSB) modulator at 1560 nanometers, capable of dynamic frequency shifting within the LPAI. By independently controlling radio frequency (RF) channels, we achieve 30-decibel carrier suppression and unprecedented 47.8-decibel sideband suppression at peak conversion efficiency of –6.846 decibels (20.7%). We investigate imbalances in both amplitudes and phases between the RF signals. Using this modulator, we demonstrate cold-atom generation, state-selective detection, and atom interferometer fringes to estimate gravitational acceleration, g ≈ 9.77 ± 0.01 meters per second squared, in a rubidium ( 87 Rb) atom system.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

A Proposed Forward Silicon Tracker for the Future Electron-Ion Collider and Associated Physics Studies

The future Electron-Ion Collider (EIC) will explore several fundamental questions in a broad Bjorken-x (x BJ ) and Q 2 phase space. Heavy flavor and jet products are ideal probes to precisely study the tomography of nucleon/nuclei structure, help solve the proton spin puzzle and understand the hadronizaton processes in vacuum or in the QCD medium. Due to the asymmetric collisions at the EIC, most of the final state hadrons are produced in the nucleon/nuclei beam going (forward) direction. A silicon vertex/tracking is critical to precisely measure these forward hadrons at the EIC. Details of different conceptual designs of the proposed Forward Silicon Tracker (FST) and the relevant detector performance are presented in this technical note. The associated heavy flavor and jet studies with the evaluated FST performance are discussed as well.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2023

Exploiting Fixed Charge at Selective Contacts for Silicon Photovoltaics

The goal of this work was to examine and exploit fixed interface charges in ultra-thin (0-3 nm thickness) tunnel dielectric layers sandwiched between silicon and selective contact metal oxides (molybdenum oxide, MoO x , titanium oxide, TiO 2 ). Specifically, the interface fixed charge was varied by changing processing conditions and materials over a wide range and the effect on the current-voltage behavior and the Schottky barrier height was quantified. In budget period 1 (year 1), the objective was to grow aluminum oxide tunnel layers with quantified fixed charge over a range of ~1E12 to ~-2E12 cm -2 and combine these with MoO x and TiO 2 layers on Czochralsi (CZ) mono p- and n-Si, respectively. We sought conditions that maximize fixed charge and minimize Schottky barrier height to MoO x contacts to p-Si. This objective, along with investigating the effects of silicon surface terminations, occupied the majority of the project timeline (Q1-Q8) due to complications with high specific contact resistivity values. In the last two quarters of the project period, the objective was to insert HfO2 layers between Si and aluminum oxide layers to quench the fixed charge for layers with otherwise identical thermal history. Another objective was to lower the barrier height at TiO 2 -based contacts on n-type Si, but that was never investigated completely.

14 SOLAR ENERGY↗
DOE OSTI2026

Molten Salt Electrochemical Reactors Outside of a Glovebox

Molten salt electrochemical reduction (MSER) offers an electrified method for the reduction, refining, and recycling of metals such as iron and metallurgical grade silicon at high efficiency and lower temperatures than traditional methods, which use temperatures >1000C and carbon-based reductants. However, salts appropriate for MSER are moisture and air sensitive, necessitating air-free methods of processing and testing which is often acomplished with a glovebox. Glovebox operations are cumbersome and difficult to troubleshoot reactor issues. We have developed a robust method of testing chloride and carbonate salts in molten salt reactors outside of a glovebox for silicon and carbon production and steel carburization. We highlight a practical guide for glovebox-free testing of molten salt electrochemical reactors to reduce the barriers to performing this type of work. Our aim is to enable other research groups to step into this field with simple and repeatable reactor configurations.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Delineating magnetization dynamics in solution-processed doped yttrium iron garnet thin films

Here, in this work, thin films of ruthenium-doped and cerium-doped yttrium iron garnet were deposited on silicon using solgel chemistry. Doped YIG could be produced in phase pure form up to a precursor stoichiometry of Y 3 Ru 0.1 Fe 4.9 O 12 and Ce 0.7 Y 2.3 Fe 5 O 12 . Both dopants significantly increase the coercivity and anisotropy field of the materials either due to domain wall pinning or increased spin–orbit coupling from the dopant. To delineate these two effects, the dynamic magnetic properties were studied using strip line ferromagnetic resonance (FMR). The FMR linewidth was separated into intrinsic loss and inhomogeneous line broadening. Inhomogeneous line broadening was found to dominate the magnetic losses in all the films likely due to magnon scattering off grain boundaries, but the Gilbert damping remained fairly low. By comparing the two dopants, it was found that Gilbert damping increased more in Ce:YIG films than in Ru:YIG films. This finding was corroborated by changes in the anisotropy field of the films, indicating a larger contribution from spin–orbit coupling from cerium than from ruthenium. Surprisingly, while magnetic loss globally increased with higher substitution, adding a small amount of dopant actually reduced the inhomogeneous line broadening in both sets of films. This was corroborated by crystallite size. The damping in Ru:YIG also decreased with a small amount of the dopant, which has been predicted by Kittel for doped garnets. Thus, it follows that there is an ideal doping regime where solgel YIG can be doped at low levels without increasing magnetic loss.

36 MATERIALS SCIENCE↗
DOE OSTI2023

The Tiny Triplet Finder as a Versatile Track Segment Seeding Engine for Trigger Systems

In high energy physics experiment trigger systems, track segment seeding is a resource consuming function and the primary reason is the computing complexity of the segment finding process. As the Moore's Law is reaching its physical limit, reducing computing complexity should be carefully considered, rather than keep piling up silicon resources. The Tiny Triplet Finder is a scheme that reduces the computing complexity of the segment seeding. As a proof of concept, a 3D track segment seeding engine core based on the Tiny Triplet Finder has been implemented and tested in a low-cost FPGA device. The seeding engine is designed to preselect and group hits (stubs) from detector layers to feed subsequent track fitting stage. The seeding engine consists of a Hough transform space for r-z view and a Tiny Triplet Finder for r-phi view to implement 3D constraints. The seeding engine is organized as a pipeline so that each hit is processed in a single clock cycle. Taking advantage of the register-like storage block scheme which enables effectively resetting of a block RAM within a single clock cycle, clearing or refreshing the seeding engine takes only one clock cycles between two events. The Tiny Triplet Finder is also a generic coincidence finding scheme that can be used for many tasks. As a versatility demonstration, track segment finding performances for two distinctive detector geometries are tested in our seeding engine. In a collider barrel-layer geometry, the fake segment rates are studied for 3D (i.e., both r-phi and r-z views) and 2D (i.e., r-phi or r-z view only) configurations for high hit multiplicity events (>4000 hits/layer in the barrel region). Another detector geometry contains strip plane layers with timing information. The numbers of coincidences, both real or fake, with or without timing ("3D" or "2D") information at various hit multiplicities are studied.

43 PARTICLE ACCELERATORS↗
DOE OSTI2025

Photophysics of O-band and transition metal color centers in monolithic silicon for quantum communications

Color centers in the O-band (1260–1360 nm) are crucial for realizing long-coherence quantum network nodes in memory-assisted quantum communications. However, only a limited number of O-band color centers have been thoroughly explored in silicon hosts as spin-photon interfaces. This study explores and compares two promising O-band color centers in silicon for high-fidelity spin-photon interfaces: T and *Cu (transition metal) centers. During T center generation process, we observed the formation and dissolution of other color centers, including the copper-silver related centers with a doublet line around 1312 nm (*Cu$^0_n$), near the optical fiber zero dispersion wavelength (around 1310 nm). We then investigated the photophysics of both T and *Cu centers, focusing on their emission spectra and spin properties. The *Cu$^0_0$ line under a 0.5 T magnetic field demonstrated a 25% broadening, potentially due to spin degeneracy, suggesting that this center can be a promising alternative to T centers.

42 ENGINEERING↗
DOE OSTI2026

Gas electroluminescence in a dual phase xenon-doped argon detector

Noble element detectors using argon or xenon as the detection medium are widely used in the searches for rare neutrino and dark matter interactions. Xenon doping in liquid argon can preserve attractive properties of an argon target while enhancing the detectable signals with properties of xenon. Here, in this work, we deployed a dual-phase liquid argon detector with up to 4% xenon doping in the liquid and studied its gas electroluminescence properties as a function of xenon concentration. At ∼2% xenon doping in liquid argon, we measured ∼34 ppm of xenon in the gas and observed ∼2.5 times larger electroluminescence signals using vacuum ultraviolet silicon photomultipliers than those in pure argon. Analysis of signals of different wavelengths confirms that the argon gas electroluminescence process is strongly modified by the addition of xenon. We propose an analytical model to describe the underlying energy transfer mechanism in argon-xenon gas mixtures. Lastly, the implications of this measurement for low-energy ionization signal detection will be discussed.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2025

Solar Cell Metallization Wear is Sensitive to Loading Frequency

Here, we performed cyclic loading of photovoltaic laminates with precracked silicon cells to explore if and how loading frequency and contact pressure influence the ensuing gridline wear-out process. A measurement of parallel resistance across cracked gridlines on a laminated cell coupon was used as the metric for gridline electrical contact degradation. A statistical analysis of variance (ANOVA) analysis of the experimental results discerned that loading frequency is a more significant factor than contact pressure for gridline degradation.

14 SOLAR ENERGY↗
DOE OSTI2020

Precision measurement of the neutral pion lifetime

The explicit breaking of the axial symmetry by quantum fluctuations gives rise to the so-called axial anomaly. This phenomenon is solely responsible for the decay of the neutral pion π0 into two photons (γγ), leading to its unusually short lifetime. Here, we precisely measured the decay width Γ of the π 0 → γγ process. The differential cross sections for π0 photoproduction at forward angles were measured on two targets, carbon-12 and silicon-28, yielding Γ(π 0 → γγ)=7.798±0.056(stat.)±0.109(syst.) eV, where stat. denotes the statistical uncertainty and syst. the systematic uncertainty. We combined the results of this and an earlier experiment to generate a weighted average of Γ(π 0 → γγ)=7.802±0.052(stat.)±0.105(syst.) eV. Our final result has a total uncertainty of 1.50% and confirms the prediction based on the chiral anomaly in quantum chromodynamics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Hydrophobic sorbents for CO 2 /H 2 O displacement desorption applications

The disclosure generally relates to CCS sorbents, particularly for CO 2 /H 2 O displacement desorption process. The sorbent includes an aluminum oxide support and an alkali metal salt impregnated on the support, and a silicon modification of the sorbent to reduce water uptake by the sorbent and make it more hydrophobic. The silicon modification can be an organosilyl moiety added after the initial sorbent is complete, or a silica source added to the aluminum oxide structure, typically via impregnation. The sorbents demonstrate better H 2 O/CO 2 ratios. Compositions and methods of making are disclosed.

Bai, Chuansheng↗
DOE OSTI2022

A remarkable CHF of 345W/cm 2 is achieved in a wicked-microchannel using HFE-7100

Boiling heat transfer of dielectric fluids is a promising cooling technique for thermal management of microelectronic systems. However, the critical heat flux achievable is generally low, because of the poor thermophysical properties of these fluids. Here, to address this dilemma, we propose a new cooling concept to substantially enhance global liquid supply during phase-change process using enhanced capillary-driven force. Additionally, dedicated vapor pathways are designed among a bank of micro-pillars to facilitate vapor removal. In this work, new wicks comprised of silicon micro-pinfin arrays are explored to significantly enhance the flow boiling heat transfer performance. To examine the functionalities of this wick, experiments on HFE-7100 were carried out with mass velocities varying from 247 to 3,465 kg/m 2 s. To explore the enhancement mechanisms and to analyze the capillary-assisted flow boiling process, visualization studies were conducted. The results indicate that sustainable evaporation induced by wick microstructures and efficient liquid supply are the enhancement mechanisms compared to parallel microchannels with solid walls. It is found that the overall heat transfer coefficient is substantially increased up to 75%. Remarkably, a high critical heat flux (CHF) of approximately 345 W/cm 2 is recorded at G = 3,465 kg/m 2 s at coolant inlet temperature of ~20 °C. Equally importantly, this noticeable enhancement of CHF value is associated with drastically decreased pressure drops compared to microchannels decorated with μ-pinfin fences.

36 MATERIALS SCIENCE↗