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At least 397 records · Page 22

Optical Characterization and 2,525 micron Lasing of Cr(2+):Cd(0.85)Mn(0.15)Te

Transition metal doped solids are of significant current interest for the development of tunable solid-state lasers for the near and mid-infrared (1-4 pm) spectral region. Applications of these lasers include basic research in atomic, molecular, and solid-state physics, optical communication, medicine, and environmental studies of the atmosphere. In transition metal based laser materials, absorption and emission of light arises from electronic transitions between crystal field split energy levels of 3d transition metal ions. The optical spectra generally exhibit broad bands due to the strong interaction between dopant and host (electron-phonon coupling). Broad emission bands offer the prospect of tunable laser activity over a wide wavelength range, e.g. the tuning range of Ti:Sapphire extends from 700-1100 run. The only current transition metal laser operating in the mid-infrared wavelength region (1.8-2.4 micro-m) is CO(2+):MgF2, but its performance is severely limited due to strong nonradiative decay at room temperature. Based on lifetime data, the quantum efficiency is estimated to be less than 3 deg/0 11,21. In general, the probability for non-radiative decay via multi-phonon relaxation increases with decreasing energy gap between ground and excited state. Therefore, efficient transition metal lasers beyond -1.6 micro-m are rare. Recently, tunable laser activity around 2.3 micro-m was observed from Cr doped ZnS and ZnSe. The new lasing center in these materials was identified as Cr(2+) occupying the tetrahedral Zn site. Tetrahedrally coordinated optical centers are rather unusual among transition metal lasers. Their potential usefulness, however, has been demonstrated by the recent development of near infrared laser materials such as Cr:forsterite and Cr:YAG, which are based on tetrahedrally coordinated Cr(4+) ions. According to the Laporte selection rule, electric-dipole transition within the optically active 3d-electron shells are parity forbidden. However, a static acentric electric crystal field or the coupling of asymmetric phonons can force electric-dipole transitions by the admixture of wave functions with opposite parity. Tetrahedral sites lack inversion symmetry which provides the odd-parity field necessary to relax the parity selection rule. Therefore, high absorption and emission cross sections are observed. An enhanced radiative emission rate is also expected to reduce the detrimental effect of non-radiative decay. Motivated by the initial results on Cr doped ZnS and ZnSe, we have started a comprehensive effort to study Cr(2+) doped II-VI semiconductors for solid-state laser applications. In this paper we present the optical properties and the demonstration of mid-infrared lasing from Cr doped Cd(0.85)Mn(0.15)Te.

Davis, V. R.↗

Laser furnace technology for zone refining

A carbon dioxide laser experiment facility is constructed to investigate the problems in using a laser beam to zone refine semiconductor and metal crystals. The hardware includes a computer to control scan mirrors and stepper motors to provide a variety of melt zone patterns. The equipment and its operating procedures are described.

Griner, D. B.↗

Fluorescent labels for in situ wet chemistry experiments

We evaluate a wide selection of dyes and suggest a panel that would be the most likely to succeed in a simple flight instrument with a single excitation laser. We also investigate fluorescent semiconductor quantum dots as additions to or replacements for these organic dyes.

in situ wet chemistry experiments quantum dots Mar↗

Magnetic-Field-Assisted Terahertz Quantum Cascade Laser Operating up to 225 K

Advances in semiconductor bandgap engineering have resulted in the recent development of the terahertz quantum cascade laser1. These compact optoelectronic devices now operate in the frequency range 1.2-5 THz, although cryogenic cooling is still required2.3. Further progress towards the realization of devices operating at higher temperatures and emitting at longer wavelengths (sub-terahertz quantum cascade lasers) is difficult because it requires maintaining a population inversion between closely spaced electronic sub-bands (1 THz approx. equals 4 meV). Here, we demonstrate a magnetic-field-assisted quantum cascade laser based on the resonant-phonon design. By applying appropriate electrical bias and strong magnetic fields above 16 T, it is possible to achieve laser emission from a single device over a wide range of frequencies (0.68-3.33 THz). Owing to the suppression of inter-landau-level non-radiative scattering, the device shows magnetic field assisted laser action at 1 THz at temperatures up to 215 K, and 3 THz lasing up to 225 K.

Wade, A.↗

Three-dimensional models of conventional and vertical junction laser-photovoltaic energy converters

Three-dimensional models of both conventional planar junction and vertical junction photovoltaic energy converters have been constructed. The models are a set of linear partial differential equations and take into account many photoconverter design parameters. The model is applied to Si photoconverters; however, the model may be used with other semiconductors. When used with a Nd laser, the conversion efficiency of the Si vertical junction photoconverter is 47 percent, whereas the efficiency for the conventional planar Si photoconverter is only 17 percent. A parametric study of the Si vertical junction photoconverter is then done in order to describe the optimum converter for use with the 1.06-micron Nd laser. The efficiency of this optimized vertical junction converter is 44 percent at 1 kW/sq cm.

Heinbockel, John H.↗

Analyses of Technology for Solid State Coherent Lidar

Over past few years, considerable advances have been made in the areas of the diode-pumped, eye-safe, solid state lasers and room temperature, wide bandwidth, semiconductor detectors operating in the near-infrared region. These advances have created new possibilities for the development of reliable and compact coherent lidar systems for a wide range of applications. This research effort is aimed at further developing solid state coherent lidar technology for remote sensing of atmospheric processes such as wind, turbulence and aerosol concentration. The work performed by the UAH personnel under this Delivery Order concentrated on design and analyses of laboratory experiments and measurements, and development of advanced lidar optical subsystems in support of solid state laser radar remote sensing systems which are to be designed, deployed, and used to measure atmospheric processes and constituents. Under this delivery order, a lidar breadboard system was designed and analyzed by considering the major aircraft and space operational requirements. The lidar optical system was analyzed in detail using SYNOPSIS and Code V optical design packages. The lidar optical system include a wedge scanner and the compact telescope designed by the UAH personnel. The other major optical components included in the design and analyses were: polarizing beam splitter, routing mirrors, wave plates, signal beam derotator, and lag angle compensator. This lidar system is to be used for demonstrating all the critical technologies for the development of a reliable and low-cost space-based instrument capable of measuring global wind fields. A number of laboratory experiments and measurements were performed at the NASA/MSFC Detector Characterization Facility, previously developed by the UAH personnel. These laboratory measurements include the characterization of a 2-micron InGaAs detectors suitable for use in coherent lidars and characterization of Holographic Optical Element Scanners. UAH personnel actively participated in the development of performance and operational requirements for the development of the high pulse energy transmitter laser and frequency-agile local oscillator laser, that are in-progress at NASA Langley Research Center and Jet Propulsion Laboratory.

Amzajerdian, Farzin↗

Scanning Tunneling Optical Resonance Microscopy

Scanning tunneling optical resonance microscopy (STORM) is a method, now undergoing development, for measuring optoelectronic properties of materials and devices on the nanoscale by means of a combination of (1) traditional scanning tunneling microscopy (STM) with (2) tunable laser spectroscopy. In STORM, an STM tip probing a semiconductor is illuminated with modulated light at a wavelength in the visible-to-near-infrared range and the resulting photoenhancement of the tunneling current is measured as a function of the illuminating wavelength. The photoenhancement of tunneling current occurs when the laser photon energy is sufficient to excite charge carriers into the conduction band of the semiconductor. Figure 1 schematically depicts a proposed STORM apparatus. The light for illuminating the semiconductor specimen at the STM would be generated by a ring laser that would be tunable across the wavelength range of interest. The laser beam would be chopped by an achromatic liquid-crystal modulator. A polarization-maintaining optical fiber would couple the light to the tip/sample junction of a commercial STM. An STM can be operated in one of two modes: constant height or constant current. A STORM apparatus would be operated in the constant-current mode, in which the height of the tip relative to the specimen would be varied in order to keep the tunneling current constant. In this mode, a feedback control circuit adjusts the voltage applied to a piezoelectric actuator in the STM that adjusts the height of the STM tip to keep the tunneling current constant. The exponential relationship between the tunneling current and tip-to-sample distance makes it relatively easy to implement this mode of operation. The choice of method by which the photoenhanced portion of the tunneling current would be measured depends on choice of the frequency at which the input illumination would be modulated (chopped). If the frequency of modulation were low enough (typically < 10 Hz) that the feedback circuit could respond, then the voltage applied to the piezoelectric tip-height actuator could be measured by use of a lock-in amplifier locked to the modulation (chopping) signal. However, at a high modulation frequency (typically in the kilohertz range or higher), the feedback circuit would be unable to respond. In this case, the photoenhanced portion of the tunneling current could be measured directly. For this purpose, the tunneling current would be passed through a precise resistor and the voltage drop would be measured by use of the lock-in amplifier.

Bailey, Sheila↗

ICCG-10: Tenth International Conference on Crystal Growth. Oral presentation abstracts

Oral presentation abstracts from the tenth International Conference on Crystal Growth (ICCG) (Aug. 16-21, 1992) are provided. Topics discussed at the conference include superconductors, semiconductors, nucleation, crystal growth mechanisms, and laser materials. Organizing committees, ICCG advisory board and officers, and sponsors of the conference are also included.

Source record↗

Infrared technology XVII; Proceedings of the Meeting, San Diego, CA, July 22-26, 1991

Recent advances in IR technologies and their application to all types of IR systems are reported focusing on the JPL Space Infrared Telescope Facility (SIRTF), JPL instruments and systems for observation of earth and the atmosphere, staring arrays and thermal imaging, ten-year updates of IR techniques, infrared in the USSR, simulation and testing, focal-plane and optical technologies, and military and scientific applications. Particular attention is given to SIRTF stray light analysis, SIRTF focal-plane technologies, long-wave IR detectors based on III-V materials, IR lidars for atmospheric remote sensing, a firefly system concept, a high-fill-factor monolithic IR image sensor, atmospheric laser-transmission tables simply generated, ORION semiconductor optical detectors, postprocessing of thermograms in IR nondestructive testing, evaluation of the IR signature of dynamic air targets, the current status of InGaAs detector arrays for 1-3 microns, a dual-band optical system for IR multicolor signal processing, and blackbody radiators for field calibration.

Andresen, Bjorn F.↗

Growth of PbSnTe single crystal by traveling-zone method in low gravity (M-2)

The single-crystal lead tin telluride (PbSnTe) semiconductor is most promising as a laser radiation element and infrared detecting element in the far infrared region. However, it is very difficult to grow a large single crystal with a homogeneous composition on Earth because the elements have a very strong tendency to separate from each other in the molten phase due to differences in their specific gravities and melting points. The purpose of the experiment is to grow a single crystal of PbSnTe by a traveling zone method in microgravity, and to study the spatial fluctuation of the composition and the electrical properties of the crystal.

Segawa, Y.↗

Monitoring Composite Material Pressure Vessels with a Fiber-Optic/Microelectronic Sensor System

We discuss the concept of an integrated, fiber-optic/microelectronic distributed sensor system that can monitor composite material pressure vessels for Air Force space systems to provide assessments of the overall health and integrity of the vessel throughout its entire operating history from birth to end of life. The fiber optic component would include either a semiconductor light emitting diode or diode laser and a multiplexed fiber optic sensing network incorporating Bragg grating sensors capable of detecting internal temperature and strain. The microelectronic components include a power source, a pulsed laser driver, time domain data acquisition hardware, a microprocessor, a data storage device, and a communication interface. The sensing system would be incorporated within the composite during its manufacture. The microelectronic data acquisition and logging system would record the environmental conditions to which the vessel has been subjected to during its storage and transit, e.g., the history of thermal excursions, pressure loading data, the occurrence of mechanical impacts, the presence of changing internal strain due to aging, delamination, material decomposition, etc. Data would be maintained din non-volatile memory for subsequent readout through a microcomputer interface.

Klimcak, C.↗

Phase-locked laser array

A phase-locked laser array comprises a body of semiconductor material having means for defining a plurality of substantially parallel lasing zones which are spaced an effective distance apart so that the modes of the adjacent lasing zones are phase-locked to one another. One of the array electrodes comprises a plurality of electrical contacts to the body between the lasing zones. These contacts provide an enhanced current density profile and thus an increase in the gain in the regions between the lasing zones so that zero degree phase-shift operation between adjacent lasing zones is achievable.

Botez, Dan↗

Terahertz lasers and amplifiers based on resonant optical phonon scattering to achieve population inversion

The present invention provides quantum cascade lasers and amplifier that operate in a frequency range of about 1 Terahertz to about 10 Terahertz. In one aspect, a quantum cascade laser of the invention includes a semiconductor heterostructure that provides a plurality of lasing modules connected in series. Each lasing module includes a plurality of quantum well structure that collectively generate at least an upper lasing state, a lower lasing state, and a relaxation state such that the upper and the lower lasing states are separated by an energy corresponding to an optical frequency in a range of about 1 to about 10 Terahertz. The lower lasing state is selectively depopulated via resonant LO-phonon scattering of electrons into the relaxation state.

Hu, Qing↗