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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Comparison of Single-Event Transients in an Epitaxial Silicon Diode Resulting from Heavy Ion-, Focused X-Ray-, and Pulsed Laser-Induced Charge Generation
Heavy ion, focused x-ray, and pulsed laser single event transient experiments are performed on a silicon epitaxial diode. Collected charge, transient rise times, and transient fall times are calculated and compared between the different sources. It is observed that these transient shape characteristics depend on the source (ion, x-ray, or laser), even when similar amounts of charge are generated. Finally, the observed differences are examined and explained in terms of basic charge collection mechanisms.
Laser Velocimeter for Studies of Microgravity Combustion Flowfields
We are currently developing a velocimeter based on modulated filtered Rayleigh scattering (MFRS), utilizing diode lasers to make measurements in an unseeded gas or flame. MFRS is a novel variation of filtered Rayleigh scattering, utilizing modulation absorption spectroscopy to detect a strong absorption of a weak Rayleigh scattered signal. A rubidium (Rb) vapor filter is used to provide the relatively strong absorption and semiconductor diode lasers generate the relatively weak Rayleigh scattered signal. Alkali metal vapors have a high optical depth at modest vapor pressures, and their narrow linewidth is ideally suited for high-resolution velocimetry; the compact, rugged construction of diode lasers makes them ideally suited for microgravity experimentation. Molecular Rayleigh scattering of laser light simplifies flow measurements as it obviates the complications of flow-seeding. The MFRS velocimeter should offer an attractive alternative to comparable systems, providing a relatively inexpensive means of measuring velocity in unseeded flows and flames.
Lasing characteristics of InAs quantum dot laers on InP substrate
Single-stack InAs self-assembled quantum dots (QD) lasers based on InP substrate have been grown by metalorganic vapor phase epitaxy. The narrow ridge waveguide lasers lased up to 260 K in continuous wave operation, and near room temperature in pulsed mode, with wavelengths between 1.59 to 1.74 mu m.
Mid-Infrared Interband Cascade Lasers for Free-Space Laser Communication
We have fabricated high-speed Interband Cascade lasers and provided the first experimental evidence that these devices can be directly modulated at a frequency of 3.2 GHz and above.
Colloidal semiconductor quantum shells for solution-processed laser applications
Laser diodes based on solution-processed semiconductor quantum dots (QDs) present an economical and color-tunable alternative to traditional epitaxial lasers.
Ultrasensitive detection of atmospheric trace gases using frequency modulation spectroscopy
Frequency modulation (FM) spectroscopy is a new technique that promises to significantly extend the state-of-the-art in point detection of atmospheric trace gases. FM spectroscopy is essentially a balanced bridge optical heterodyne approach in which a small optical absorption or dispersion from an atomic or molecular species of interest generates an easily detected radio frequency (RF) signal. This signal can be monitored using standard RF signal processing techniques and is, in principle, limited only by the shot noise generated in the photodetector by the laser source employed. The use of very high modulation frequencies which exceed the spectral width of the probed absorption line distinguishes this technique from the well-known derivative spectroscopy which makes use of low (kHz) modulation frequencies. FM spectroscopy was recently extended to the 10 micron infrared (IR) spectral region where numerous polyatomic molecules exhibit characteristic vibrational-rotational bands. In conjunction with tunable semiconductor diode lasers, the quantum-noise-limited sensitivity of the technique should allow for the detection of absorptions as small as .00000001 in the IR spectral region. This sensitivity would allow for the detection of H2O2 at concentrations as low as 1 pptv with an integration time of 10 seconds.
Dual-Wavelength Y-Branch DBR Lasers With 100 mW of CW Power Near 2 μm
In this study, the interband GaSb-based diode lasers emitting simultaneously in two narrow bands separated by either ~1.6 or ~3.3 THz were designed, fabricated and characterized. The device active region contained one asymmetric tunnel-coupled double quantum well with separation between two lowest electron subbands controlled by thickness of the tunnel barrier. The Y-branch 6th order distributed Bragg reflector devices have been fabricated with either deep or shallow etched ridge waveguides. The increase of the deeply etched ridge waveguide width from 10 to 20 μm improved laser threshold and efficiency thanks to reduction of the relative role of the sidewall defect recombination. Further improvement of the device performance parameter was achieved by shallow etching. The shallow etched lasers with stable dual-wavelength emission spectrum generated 100 mW of continuous wave output power at 20 °C
Demonstration of a 20‐W membrane‐external‐cavity surface‐emitting laser for sodium guide star applications
Abstract We present a record 20‐W continuous‐wave output power membrane‐external‐cavity surface‐emitting laser (MECSEL) double‐bonded to silicon carbide (SiC) heat spreaders emitting around 1178 nm. We achieved a maximum slope efficiency of 27.7% and an optical‐to‐optical efficiency of 26.7%. By utilising an intracavity birefringent filtre, the wavelength was tuned over 75 nm and maximum output power of 12.7 W was recorded at 1178 nm. This study shows the potential of MECSELs to achieve high‐performance and cost‐effective optically pumped semiconductor disk lasers targeting applications in sodium guide stars.
Laterally Coupled Distributed-Feedback GaSb-Based Diode Lasers for Atmospheric Gas Detection at 2 Microns
We demonstrate single-mode laterally coupled distributed-feedback diode lasers at 2.05 microns employing low-loss etched gratings. Single-facet CW output exceeds 50 mW near room temperature with linewidth below 1 MHz over 10-ms observation times
Precise Control of a Tunable IR Diode Laser
Tuning system applicable to lead-salt semiconductor tunable diode laser (TDL) and other solid-state lasers with temperature and current dependent emission wavelength developed for balloon borne, highresolution spectrometer that measures trace atmospheric constituents in stratosphere. Instrument measures absorption at approximately 20 points in 100 MHz wide spectral line.
Solid-state lasers for coherent communication and remote sensing
Semiconductor-diode laser-pumped solid-state lasers have properties that are superior to other lasers for the applications of coherent communication and remote sensing. These properties include efficiency, reliability, stability, and capability to be scaled to higher powers. We have demonstrated that an optical phase-locked loop can be used to lock the frequency of two diode-pumped 1.06 micron Nd:YAG lasers to levels required for coherent communication. Monolithic nonplanar ring oscillators constructed from solid pieces of the laser material provide better than 10 kHz frequency stability over 0.1 sec intervals. We have used active feedback stabilization of the cavity length of these lasers to demonstrate 0.3 Hz frequency stabilization relative to a reference cavity. We have performed experiments and analysis to show that optical parametric oscillators (OPO's) reproduce the frequency stability of the pump laser in outputs that can be tuned to arbitrary wavelengths. Another measurement performed in this program has demonstrated the sub-shot-noise character of correlations of the fluctuations in the twin output of OPO's. Measurements of nonlinear optical coefficients by phase-matched second harmonic generation are helping to resolve inconsistency in these important parameters.
Room-temperature continuous operation of InAsSb quantum-dot lasers near 2 mu m based on (100) InP substrate
Single-stack InAsSb self-assembled quantum-dot lasers based on (001) InP substrate have been grown by metalorganic vapor-phase epitaxy. The narrow ridge waveguide lasers lased at wavelengths near 2 mu m up to 25 degrees C in continuous-wave operation. At room temperature, a differential quantum efficiency of 13 percent is obtained and the maximum output optical power reaches 3 mW per facet with a threshold current density of 730 A/cm(sup 2). With increasing temperature the emission wavelength is extremely temperature stable, and a very low wavelength temperature sensitivity of 0.05 nm/degrees C is measured, which is even lower than that caused by the refractive index change.
Free Space Optical Communication Utilizing Mid-Infrared Interband Cascade Laser
A Free Space Optical (FSO) link utilizing mid-IR Interband Cascade lasers has been demonstrated in the 3-5 micron atmospheric transmission window with data rates up to 70 Mb/s and bit-error-rate (BER) less than 10 (exp -8). The performance of the mid-IR FSO link has been compared with the performance of a near-IR link under various fog conditions using an indoor communication testbed. These experiments demonstrated the lower attenuation and scintillation advantages of a mid-IR FSO link through fog than a 1550 nm FSO link.
Thin film lithium niobate electric field sensors
We present our results for using thin film lithium niobate devices for electric field sensing applications. Micro-ring modulator and Mach–Zehnder modulator-based electric field sensors are demonstrated. Micro-ring resonator sensors can be used for low frequency (up to several GHz) electric field sensing applications and achieve a high sensitivity of 80 mV/(m Hz 1/2 ) with a very compact size of 300 μm, as limited by the intensity and phase noise of the used distributed feedback laser. A measurement bandwidth of 2.5 GHz is measured for these sensors and is limited by the detector bandwidth. Alternatively, Mach–Zehnder modulators allow for perfect phase matching between the radio frequency signals and optical signals, and they can be used for electric field sensing up to several THz. A sensitivity of 2.2 V/(m Hz 1/2 ) was obtained using our Mach–Zehnder electric field sensor with an interaction length of 600 μm. The Mach–Zehnder sensor can sense electric fields with frequencies reaching 0.6 THz based on the calculated results.
Nanostructured $\mathrm{GaAs/(Al,Ga)As}$ Waveguide for Low-Density Polariton Condensation from a Bound State in the Continuum
Exciton-polaritons are hybrid light-matter states that arise from strong coupling between an exciton resonance and a photonic cavity mode. As bosonic excitations, they can undergo a phase transition to a condensed state that can emit coherent light without a population inversion. This aspect makes them good candidates for thresholdless lasers, yet short exciton-polariton lifetime has made it difficult to achieve condensation at very low power densities. In this sense, long-lived symmetry-protected states are excellent candidates to overcome the limitations that arise from the finite mirror reflectivity of monolithic microcavities. In this work we use a photonic symmetry-protected bound state in the continuum coupled to an excitonic resonance to achieve state-of-the-art polariton condensation threshold in a GaAs/(Al,Ga)As waveguide. Most important, we show the influence of fabrication control and how surface passivation via atomic layer deposition provides a way to reduce exciton quenching at the grating sidewalls.
Conformal Coating of Freestanding Particles by Vapor‐Phase Infiltration
Not Available
Strong ultrafast nonlinear optical response from megaelectronvolt electrons in semiconductors
Understanding radiation–matter interactions on ultrafast timescales is essential for radiation detection technologies, particularly those requiring precise timing, such as plasma monitoring, synchrotron diagnostics and medical imaging. However, the detection of highly ionizing radiation is challenging due to the stochastic nature of the interactions, resulting in dispersed energy deposition. Here we show a nonlinear optical response in semiconductors induced by 150-fs, 4.2-MeV electrons that generate highly localized charge carriers. The induced sub-10-ps optical modulation reached up to 24.5%, accompanied by a blueshift in the absorption edge consistent with band filling and carrier densities of 10 18 cm −3 . These carrier densities are 100-fold higher than expected from the deposited energy, indicating the extreme spatial localization of carriers at inelastic collisions along the ionization trajectories, thereby leading to the observed modulation. The strong nonlinearity of the MeV-electron-induced optical response enables the precise spatiotemporal detection of ionizing radiation at room temperature using common semiconductors and laser systems.