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In this paper, we discuss the development of very sensitive long wavelength infrared (LWIR) GaAs/Al(x)Ga(l-x)As quantum well infrared photodetectors (QWIPs), fabrication of random reflectors for efficient light coupling, and the demonstration of the first hand-held long-wavelength 256 x 256 QWIP focal plane array camera. Excellent imagery, with a noise equivalent differential temperature (NE Delta T) of 25 mK has been achieved.
Since the introduction of thermopile, pyranometers (solar, e.g., 0.3-3.0 micrometers) and pyrgeometers (terrestrial, e.g., 4-50 micrometers) have become instruments commonly used for measuring the broadband hemispherical irradiances at the surface in a long-term, monitoring mode for decades. These commercially available radiometers have been manufactured in several countries such as from the United States, Asia, and Europe, and are generally reliable and economical. These worldwide distributions of surface measurements become even more important in the era of Earth remote sensing in studying climate forcing. However, recent studies from field campaigns have pointed out that erroneous factors (e.g., temperature gradients between the filter dome and detector, emissivity of the thermopile) are responsible for the unacceptable level of uncertainty (e.g., 10-20 W m (exp -2)). Using a newly developed instrument of Quantum Well Infrared Photodetector (QWIP), we have characterized the brightness temperature fields of pyranometers and pyrgeometers under various sky conditions. The QWIP is based on the superlattice (GaAs/AlGaAs) technology and has a noise equivalent temperature (NE delta T) less than 0.1 K. The quality of pyranometer and pyrgeometer measurements can be improved largely by applying proper knowledge of the thermal parameters affecting the operation of the thermopile systems. For example, we show a method to determine the "dome factor" (the longwave emission divided by the longwave transmission of a pyrgeometer dome) from field measurements. The results show, and are verified independently by the QWIP, that our dome factors of 0.59 and 0.90 are much smaller than the value of 4.0 assumed by the WMO (World Meteorological Organization). Data correction procedure and algorithm will be presented and discussed.
Since the introduction of thermopile, pyranometers (solar, e.g., 0.3-3.0 microns) and pyrgeometers (terrestrial, e.g., 4-50 microns) have become instruments commonly used for measuring the broadband hemispherical irradiances at the surface in a long-term, monitoring mode for decades. These commercially available radiometers have been manufactured in several countries such as from the United States, Asia, and Europe, and are generally reliable and economical. These worldwide distributions of surface measurements become even more important in the era of Earth remote sensing in studying climate forcing. However, recent studies from field campaigns have pointed out that erroneous factors (e.g., temperature gradients between the filter dome and detector, emissivity of the thermopile) are responsible for the unacceptable level of uncertainty (e.g., 10-20 W/square Meter). Using a newly developed instrument of Quantum Well Infrared Photodetector (QWIP), we have characterized the brightness temperature fields of pyranometers and pyrgeometers under various sky conditions. The QWIP is based on the superlattice (GaAs/AlGaAs) technology and has a noise equivalent temperature (NE delta T) less than 0.1 K. The quality of pyranometer and pyrgeometer measurements can be improved largely by applying proper knowledge of the thermal parameters affecting the operation of the thermopile systems. For example, we show a method to determine the "dome factor" (the longwave emission divided by the longwave transmission of a pyrgeometer dome) from field measurements. The results show, and are verified independently by the QWIP, that our dome factors of 0.59 and 0.90 are much smaller than the value of 4.0 assumed by the WMO. Data correction procedure and algorithm will be presented and discussed.
Since the introduction of thermopile, pyranometers (solar, e.g., 0.3-3.0 micrometers) and pyrgeometers (terrestrial, e.g., 4-50 micrometers) have become instruments commonly used for measuring the broadband hemispherical irradiances at the surface in a long-term, monitoring mode for decades. These commercially available radiometers have been manufactured in several countries such as from the United States, Asia, and Europe, and are generally reliable and economical. These worldwide distributions of surface measurements become even more important in the era of Earth remote sensing in studying climate change. However, recent studies from field campaigns have pointed out that erroneous factors (e.g., temperature gradients between the filter dome and detector, emissivity of the thermopile) are responsible for the unacceptable level of uncertainty (e.g., 20 W m(exp -2)). Using a newly developed instrument of Quantum Well Infrared Photodetector (QWTP), we have characterized the brightness temperature fields of pyranometers and pyrgeometers under various sky conditions. The QWIP is based on the superlattice (GaAs/AlGaAs) technology and has a noise equivalent temperature (NEAT) less than 0.1 K. The quality of pyranometer and pyrgeometer measure- ments can be improved largely by applying proper knowledge of the thermal parameters affecting the operation of the thermopile systems. Data correction procedure and algorithm will be presented and discussed.
The research goal was to achieve a fundamental understanding of the physical processes occurring at the surfaces and interfaces of epitaxially grown InGaAs/GaAs (100) heterostructures. This will facilitate the development of quantum well devices for infrared optical applications and provide quantitative descriptions of key phenomena which impact their performance. Devices impacted include high-speed laser diodes and modulators for fiber optic communications at 1.55 micron wavelengths and intersub-band lasers for longer infrared wavelengths. The phenomenon of interest studied was the migration of indium in InGaAs structures. This work centered on the molecular beam epitaxy reactor and characterization apparatus donated to CAU by AT&T Bell Laboratories. The material characterization tool employed was secondary ion mass spectrometry. The training of graduate and undergraduate students was an integral part of this program. The graduate students received a thorough exposure to state-of-the-art techniques and equipment for semiconductor materials analysis as part of the Master''s degree requirement in physics. The undergraduates were exposed to a minority scientist who has an excellent track record in this area. They also had the opportunity to explore surface physics as a career option. The results of the scientific work was published in a refereed journal and several talks were presented professional conferences and academic seminars.
Many-body Coulomb effects influence the operation of quantum-well (QW) laser diode (LD) strongly. In the present work, we study a two-band electron-hole plasma (EHP) within the Hatree-Fock approximation and the single plasmon pole approximation for static screening. Full inclusion of momentum dependence in the many-body effects is considered. An empirical expression for carrier density dependence of the bandgap renormalization (BGR) in an 8 nm GaAs/Al(0.3)G(4.7)As single QW will be given, which demonstrates a non-universal scaling behavior for quasi-two-dimension structures, due to size-dependent efficiency of screening. In addition, effective mass renormalization (EMR) due to momentum-dependent self-energy many-body correction, for both electrons and holes is studied and serves as another manifestation of the many-body effects. Finally, the effects on carrier density dependence of the alpha factor is evaluated to assess the sensitivity of the full inclusion of momentum dependence.
Ultrafast modulation of semiconductor quantum well (QW) laser is of technological importance for information technology. Improvement by order(s) of magnitude in data transfer rate is possible as terahertz (THz) radiation is available for heating the laser at picosecond time scale. Optical gain modulation in the QW is achieved via temperature modulation of electron-hole plasma (EHP). Applications include free-space THz communication, optical switching, and pulse generation. The EHP in the semiconductor QW is described with a two-band model. Semiconductor Bloch equations with many-body effects are used to derive a hydrodynamical model for the active QW region. Because of ultrafast carrier-carrier scatterings in the order of 50 fs, EHP follows quasiequilibrium Fermi-Dirac distributions and THz field interacts incoherently with it. Carrier-longitudinal optical (LO) phonon scatterings and coherent laser-EHP interaction are treated microscopically in our physical model. A set of hydrodynamical equations for plasma density, temperature, and laser envelop amplitude are derived and Runge-Kutta method is adopted for numerical simulation. A typical 8 nm GaAs/Al(0.3)Ga(0.7) As single QW at 300 K is used. Additional information is contained in the original extended abstract.
A 3D statistical 'atomistic' simulation technique has been developed to study the effect of the random dopant induced parameter fluctuations in aggressively scaled MOSFETs. Efficient implementation of the 'atomistic' simulation approach has been used to investigate the threshold voltage standard deviation and lowering in the case of uniformly doped MOSFETs, and in fluctuation-resistant architectures utilising epitaxial-layers and delta-doping. The effect of the random doping in the polysilicon gate on the threshold voltage fluctuations has also been thoroughly investigated. The influence of a single-charge trapping on the channel conductivity in decanano MOSFETs is studied in the 'atomistic' framework as well. Quantum effects are taken into consideration in our 'atomistic' simulations using the density gradient formalism.
We present numerical results of the diffusion coefficients (DCs) in the coupled diffusion model derived in the preceding paper for a semiconductor quantum well. These include self and mutual DCs in the general two-component case, as well as density- and temperature-related DCs under the single-component approximation. The results are analyzed from the viewpoint of free Fermi gas theory with many-body effects incorporated. We discuss in detail the dependence of these DCs on densities and temperatures in order to identify different roles played by the free carrier contributions including carrier statistics and carrier-LO phonon scattering, and many-body corrections including bandgap renormalization and electron-hole (e-h) scattering. In the general two-component case, it is found that the self- and mutual- diffusion coefficients are determined mainly by the free carrier contributions, but with significant many-body corrections near the critical density. Carrier-LO phonon scattering is dominant at low density, but e-h scattering becomes important in determining their density dependence above the critical electron density. In the single-component case, it is found that many-body effects suppress the density coefficients but enhance the temperature coefficients. The modification is of the order of 10% and reaches a maximum of over 20% for the density coefficients. Overall, temperature elevation enhances the diffusive capability or DCs of carriers linearly, and such an enhancement grows with density. Finally, the complete dataset of various DCs as functions of carrier densities and temperatures provides necessary ingredients for future applications of the model to various spatially inhomogeneous optoelectronic devices.
Temperature effects can be important in short pulse propagation or in CW operation of VCSELs. In those cases, the optical susceptibility function is, in general, a function of carrier density and plasma and/or lattice temperature(s). Just as there is an alpha factor induced by the density change (density alpha), there are alpha factors induced by lattice or plasma temperature change (temperature alphas). The density alpha factor has been studied quite extensively, while the temperature alpha factors have not been computed for any structure. I will report on my first calculations of alpha factors induced by the plasma and lattice temperature change for GaAs/AlGaAs quantum wells using microscopic theory. Besides, the temperature dependence of the density alpha factor is also considered.
Electron and hole diffusions in the plane of semiconductor quantum wells play an important part in the static and dynamic operations of semiconductor lasers. It is well known that the value of diffusion coefficients affects the threshold pumping current of a semiconductor laser. At the same time, the strength of carrier diffusion process is expected to affect the modulation bandwidth of an AC-modulated laser. It is important not only to investigate the combined DC and AC effects due to carrier diffusion, but also to separate the AC effects from that of the combined effects in order to provide design insights for high speed modulation. In this presentation, we apply a hydrodynamic model developed by the present authors recently from the semiconductor Bloch equations. The model allows microscopic calculation of the lateral carrier diffusion coefficient, which is a nonlinear function of the carrier density and plasma temperature. We first studied combined AC and DC effects of lateral carrier diffusion by studying the bandwidth dependence on diffusion coefficient at a given DC current under small signal modulation. The results show an increase of modulation bandwidth with decrease in the diffusion coefficient. We simultaneously studied the effects of nonlinearity in the diffusion coefficient. To clearly identify how much of the bandwidth increase is a result of decrease in the threshold pumping current for smaller diffusion coefficient, thus an effective increase of DC pumping, we study the bandwidth dependence on diffusion coefficient at a given relative pumping. A detailed comparison of the two cases will be presented.
A sensitive infrared camera that observes the blazing plumes from the Space Shuttle or expendable rocket lift-offs is capable of scanning for fires, monitoring the environment and providing medical imaging. The hand-held camera uses highly sensitive arrays in infrared photodetectors known as quantum well infrared photo detectors (QWIPS). QWIPS were developed by the Jet Propulsion Laboratory's Center for Space Microelectronics Technology in partnership with Amber, a Raytheon company. In October 1996, QWIP detectors pointed out hot spots of the destructive fires speeding through Malibu, California. Night vision, early warning systems, navigation, flight control systems, weather monitoring, security and surveillance are among the duties for which the camera is suited. Medical applications are also expected.
Developed by NASA's Jet Propulsion Laboratory over the past decade with an excess of $15 million of government research and development investment, quantum well infrared photodetectors (QWIPs) are infrared imaging sensors that can operate in the long wavelength portion of the electromagnetic spectrum, where objects at an ambient temperature emit the most energy. QWIPTECH was formed in July 1998 to offer JPL's QWIPs in a commercial format. The company currently holds an exclusive worldwide license to manufacture and sell the infrared photodetector sensors as part of a focal plane array called a QWIP Chip(TM). The QWIP Chip provides high thermal sensitivity (0.001 C) and possesses a broad dynamic range, permitting precise observations over a wide range of temperatures. Since the technology uses heat rather than light, it can "see" in complete darkness and through conditions such as dust, smoke, and light fog.
GaAs based Quantum Well Infrared Photodetector (QWIP) technology has shown remarkable success in advancing low cost, highly uniform, high-operability, large format multi-color focal plane arrays. QWIPs afford greater flexibility than the usual extrinsically doped semiconductor IR detectors. The wavelength of the peak response and cutoff can be continuously tailored over a range wide enough to enable light detection at any wavelength range between 6 and 20 micron. The spectral band-width of these detectors can be tuned from narrow (Deltalambda/lambda is approximately 10%) to wide (Deltalambda/lambda is approximately 40%) allowing various applications. Furthermore, QWIPs offer low cost per pixel and highly uniform large format focal plane arrays due to mature GaAs/AlGaAs growth and processing technologies. The other advantages of GaAs/AlGaAs based QWIPS are higher yield, lower l/f noise and radiation hardness (1.5 Mrad). In this presentation, we will discuss our recent demonstrations of 640x512 pixel narrow-band, broad-band, multi-band focal plane arrays, and the current status of the development of 1024x1024 pixel long-wavelength infrared QWIP focal plane arrays.
A 640x512 pixel, long-wavelength cutoff, narrow-band (delta(lambda)/approx. 10%) quantum well infrared photodetector (QWIP) focal plane array (FPA), a four-band QWIP FPA in the 4-16 m spectral region, and a broad-band (delta(lambda)/approx. 42%) QWIP FPA having 15.4 m cutoff have been demonstrated.
A new infrared heterodyne instrument has been developed which allows the use of both tuneable diode lasers (TDL) and quantum cascade lasers (QCL) as local oscillators (LO). The current frequency tuning range of our system extends from 900 to 1100/cm depending on the availability of lasers but is planned to be extended to 600/cm soon. The IF-bandwidth is 1.4 GHz using an acousto-optical spectrometer (AOS). The frequency resolution and stability of the system is approximately 10(exp 7). Currently, mercury-cadmium-telluride (MCT) detectors are used as mixers while new devices like quantum-well-infrared-photodetectors (QWIP) and hot-electron-bolometers (HEB) are investigated. The IF-bandwidth can be extended to about 3 GHz by using a new broadband acousto-optical spectrometer presently under development. The instrument is fully transportable and can be attached to any infrared or optical telescope. The semiconductor laser is stabilized to a Fabry-Perot ring-resonator, which is also used as an efficient diplexer to superimpose the local-oscillator and the signal radiation. As a first step measurements of trace gases in Earth's atmosphere and non-LTE emission from Venus' atmosphere were carried out as well as observations of molecular features in sunspots. Further astronomical observations from ground-based telescopes and the airborne observatory SOFIA are planned for the future. Of particular interest are molecules without a permanent dipole moment like H2, CH4, C2H2 etc.
The quantum well infrared photodetector is an artificially engineered semiconductor multilayer structure designed to absorb and detect infrared radiation.
Very long wavelength infrared (VWIR) photodetectors, 14 20 , are of a great interest for variety of space-borne applications. These space applications have placed stringent requirements on the performance of the infrared detectors and arrays including high detectivity, low dark current, uniformity, radiation hardness and lower power dissipation. I will discuss the development and progress of AlxGal- xAs/GaAs VWIR quantum well infrared photodetectors (QWIPs) to meet those stringent requirements and the demonstration of a 15 128x128 QWIP focal plane array camera. The noise equivalent temperature difference of the focal plane array is 30 mK at 300 K background, and operating temperature is 45 K.