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At least 397 records · Page 22

All sources NASA NTRS DOE OSTI

DOE OSTI2020

Memory access system

A method and system for accessing a memory for a data processing system. The method comprises sending a read request for a plurality of locations in the memory to read the plurality of locations in parallel based on an upper bound for reading the memory. The upper bound for a number of locations is based on a group of constraints for the memory. The method receives a summed value of a plurality of memory values in the plurality of locations in the memory.

97 MATHEMATICS AND COMPUTING↗

DOE OSTI2021

Bit error protection in cache memories

A computing device having a cache memory that is configured in a write-back mode is described. A cache controller in the cache memory acquires, from a record of bit errors that are present in each of a plurality of portions of the cache memory, a number of bit errors in a portion of the cache memory. The cache controller detects a coherency state of data stored in the portion of the cache memory. Based on the coherency state and the number of bit errors, the cache controller selects an error protection from among a plurality of error protections. The cache controller uses the selected error protection to protect the data stored in the portion of the cache memory from errors.

Kalamatianos, John↗

DOE OSTI2022

Ballistic reversible superconducting memory element

A reversible memory element is provided. The reversible memory element comprises a reversible memory cell comprising a Josephson junction and a passive inductor. A ballistic interconnect is connected to the reversible memory cell by a bidirectional input/output port. A polarized input fluxon propagating along the ballistic interconnect exchanges polarity with a stationary stored fluxon in the reversible memory cell in response to the input fluxon reflecting off the reversible memory cell.

Frank, Michael P.↗

DOE OSTI2022

Shape memory polymers

New shape memory polymer compositions, methods for synthesizing new shape memory polymers, and apparatus comprising an actuator and a shape memory polymer wherein the shape memory polymer comprises at least a portion of the actuator. A shape memory polymer comprising a polymer composition which physically forms a network structure wherein the polymer composition has shape-memory behavior and can be formed into a permanent primary shape, re-formed into a stable secondary shape, and controllably actuated to recover the permanent primary shape. Polymers have optimal aliphatic network structures due to minimization of dangling chains by using monomers that are symmetrical and that have matching amine and hydroxl groups providing polymers and polymer foams with clarity, tight (narrow temperature range) single transitions, and high shape recovery and recovery force that are especially useful for implanting in the human body.

59 BASIC BIOLOGICAL SCIENCES↗

DOE OSTI2023

Shape memory polymers

Wilson, Thomas S.↗

DOE OSTI2025

DEVELOPMENT OF INEXPENSIVE HIGH TEMPERATURE NITI-BASED SHAPE MEMORY ALLOYS FOR POWDER BED ADDITIVE MANUFACTURING

NiTi and NiTi-based Shape Memory Alloys (SMA) exhibit a reversible solid-state phase transformation from martensite to austenite driven by thermal energy. High temperature (Mf>100°C) SMAs are martensite at room temperature and can be fabricated into solid-state actuators that return to a pre-programmed shape against a designed load after heating to transformation threshold. Reactive as-fabricated additively manufactured parts (4-D printing) is the current state of the art in manufacturing of SMAs but requires compositions compliant to rapid solidification. Existing actuator designs are developed from commercially available, highly investigated material compositions. However, existing high temperature high performance (high actuation strain, low thermal hysteresis) shape memory alloys contain significant (>10% at.) portions of high-cost Platinum Group Metals (PGMs). It is of significant scientific interest to investigate material compositions that are peer performing or superior to PGMs whose constituent elements represent a significant cost savings. Shape memory alloy properties vary significantly with small (0.1% at.) compositional changes making robust investigative sample sets very large. Computational material design can be deployed to shrink the compositional space of possible alloy combinations and reduce the experimental load in material discovery. Investigating shape memory effect (SME) and validating process additive process parameters for a single novel composition is cost intensive in both time and consumed materials. Additionally, sub-optimal processing, oxygen, or solidification rate sensitivity could render additively manufacturing specimens without micro, macro cracks, or significant chemical variance impossible. Unfortunately, such failure susceptibility cannot be simulated. Therefore, a research pathway to validate novel shape memory alloy compositions for powder bed fusion additive manufacturing without the need for powdered feedstock is also proposed. This research investigates novel high temperature shape memory alloys for actuators without platinum group alloying elements to discover one that could be commercially viable as an additive manufacturing feedstock.

Sundermann, Tayler↗

DOE OSTI2017

In-situ studies on martensitic transformation and high-temperature shape memory in small volume zirconia

Recently, the shape memory effect with significant recoverable shape deformation has been discovered in small volume single-crystal zirconia. The application potential for such shape memory ceramics has spurred in-depth exploration of the martensitic transformation crystallography and high temperature shape memory effect. In this paper, the martensitic transformation of micron-sized zirconia has been studied in both a pristine as-produced condition and after micromechanical compression, using synchrotron scanning micro X-ray diffraction (μXRD). The pristine zirconia was found to transform into the monoclinic phase via a different crystallographic path than the compressed zirconia, resulting in distinct monoclinic variant preferences. The characteristic martensitic transformation temperatures were also found to be higher after uniaxial compression than in the pristine condition. Such observations provide insight on the differences between stress-induced and thermally-induced martensitic transformation. Moreover, we have observed a full cycle of the shape memory effect with large recoverable strain (7%) in micron-sized zirconia at a temperature of 400 °C. Finally, our findings provide an important guideline to tailor the high-temperature shape memory properties of zirconia for further scientific research and engineering applications.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Optically connected memory for disaggregated data centers

Recent advances in integrated photonics enable the implementation of reconfigurable, high-bandwidth, and low energy-per-bit interconnects in next-generation data centers. We propose and evaluate an Optically Connected Memory (OCM) architecture that disaggregates the main memory from the computation nodes in data centers. OCM is based on micro-ring resonators (MRRs), and it does not require any modification to the DRAM memory modules. We calculate energy consumption from real photonic devices and integrate them into a system simulator to evaluate performance. Here, our results show that (1) OCM is capable of interconnecting four DDR4 memory channels to a computing node using two fibers with 1.02 pJ energy-per-bit consumption and (2) OCM performs up to 5.5× faster than a disaggregated memory with 40G PCIe NIC connectors to computing nodes.

97 MATHEMATICS AND COMPUTING↗

DOE OSTI2022

Metall: A persistent memory allocator for data-centric analytics

Data analytics applications transform raw input data into analytics-specific data structures before performing analytics. Unfortunately, such data ingestion steps are often more expensive than analytics. In addition, various types of NVRAM devices are already used in many HPC systems today. Such devices will be useful for storing and reusing data structures beyond a single process life cycle. We developed Metall, a persistent memory allocator built on top of the memory-mapped file mechanism. Metall enables applications to transparently allocate custom C++ data structures into various types of persistent memories. Metall incorporates a concise and high-performance memory management algorithm inspired by Supermalloc and the rich C++ interface developed by Boost.Interprocess library. On a dynamic graph construction workload, Metall achieved up to 11.7x and 48.3x performance improvements over Boost.Interprocess and memkind (PMEM kind), respectively. We also demonstrate Metall’s high adaptability by integrating Metall into a graph processing framework, GraphBLAS Template Library. Here this study’s outcomes indicate that Metall will be a strong tool for accelerating future large-scale data analytics by allowing applications to leverage persistent memory efficiently.

97 MATHEMATICS AND COMPUTING↗

DOE OSTI2014

Mind racing: The influence of exercise on long-term memory consolidation

Over time, regular exercise can lower the risk for age-related decline in cognition. However, the immediate effects of exercise on memory consolidation in younger adults have not been fully investigated. As such, in two experiments, the effects of exercise were assessed on three different memory tasks. These included paired-associate learning, procedural learning and text memory. Results indicate that performance on procedural learning and situation model memory was increased with exercise, regardless of if participants exercised before or after encoding. No benefit of exercise was found for paired-associate learning. These findings suggest that intense exercise may benefit certain types of memory consolidation.

60 APPLIED LIFE SCIENCES↗

DOE OSTI2016

Makalu: fast recoverable allocation of non-volatile memory

Byte addressable non-volatile memory (NVRAM) is likely to supplement, and perhaps eventually replace, DRAM. Applications can then persist data structures directly in memory instead of serializing them and storing them onto a durable block device. However, failures during execution can leave data structures in NVRAM unreachable or corrupt. In this paper, we present Makalu, a system that addresses non-volatile memory management. Makalu offers an integrated allocator and recovery-time garbage collector that maintains internal consistency, avoids NVRAM memory leaks, and is efficient, all in the face of failures. We show that a careful allocator design can support a less restrictive and a much more familiar programming model than existing persistent memory allocators. Our allocator significantly reduces the per allocation persistence overhead by lazily persisting non-essential metadata and by employing a post-failure recovery-time garbage collector. Experimental results show that the resulting online speed and scalability of our allocator are comparable to well-known transient allocators, and significantly better than state-of-the-art persistent allocators.

97 MATHEMATICS AND COMPUTING↗

DOE OSTI2023

COLLABORATIVE DEVELOPMENT PROJECTS - PHOTONIC MEMORY CONTROLLER MODULE (P-MCM)

As computational density for high-performance computing and big-data services continues to scale, performance scalability of next generation computing systems is becoming increasingly constrained by limitations in memory access, power dissipation and chip packaging. The processor-memory communication bottleneck, a major challenge in current multicore processors due to limited pin-out and power budget, presents a detrimental scaling barrier to data-intensive computing. A consortium team of small businesses and leading researchers that includes experts from photonics processor-memory architecture, III/V photonic laser design/fabrication, silicon photonics design/fabrication, photonics packaging and assembly, and FPGA-based high-performance memory controller IP development – to collaboratively develop a commercialization path for a Photonic Memory Controller Module (P-MCM).

97 MATHEMATICS AND COMPUTING↗

DOE OSTI2021

In situ Parallel Training of Analog Neural Network Using Electrochemical Random-Access Memory

In-memory computing based on non-volatile resistive memory can significantly improve the energy efficiency of artificial neural networks. However, accurate in situ training has been challenging due to the nonlinear and stochastic switching of the resistive memory elements. One promising analog memory is the electrochemical random-access memory (ECRAM), also known as the redox transistor. Its low write currents and linear switching properties across hundreds of analog states enable accurate and massively parallel updates of a full crossbar array, which yield rapid and energy-efficient training. While simulations predict that ECRAM based neural networks achieve high training accuracy at significantly higher energy efficiency than digital implementations, these predictions have not been experimentally achieved. In this work, we train a 3 × 3 array of ECRAM devices that learns to discriminate several elementary logic gates (AND, OR, NAND). We record the evolution of the network’s synaptic weights during parallel in situ (on-line) training, with outer product updates. Due to linear and reproducible device switching characteristics, our crossbar simulations not only accurately simulate the epochs to convergence, but also quantitatively capture the evolution of weights in individual devices. The implementation of the first in situ parallel training together with strong agreement with simulation results provides a significant advance toward developing ECRAM into larger crossbar arrays for artificial neural network accelerators, which could enable orders of magnitude improvements in energy efficiency of deep neural networks.

97 MATHEMATICS AND COMPUTING↗

DOE OSTI2025

Interactions Enhance Ramp Reversal Memory in Locally Phase Separated Materials

The ramp-reversal memory (RRM) effect in metal–insulator transition metal oxides (TMOs), a non-volatile resistance change induced by repeated temperature cycling, has attracted considerable interest in neuromorphic computing and non-volatile memory devices. Our previous defect motion model successfully explained RRM in vanadium dioxide (VO 2 ), capturing observed critical temperature shifts and memory accumulation throughout the sample. However, this approach lacked interactions between metallic and insulating domains. Here, we extend our model by combining a correlated Random Field Ising Model with defect diffusion-segregation, enabling accurate hysteresis modeling while predicting the relationship between RRM and domain interactions. Our simulations demonstrate that the maximum RRM occurs when the turnaround temperature approaches the inflection point. This peak in RRM vs. turnaround temperature is consistent with prior transport measurements, as well as our own optical measurements reported here. Significantly, we find that increasing nearest-neighbor interactions enhances the maximum memory effect, thus providing a clear mechanism for optimizing RRM performance. Since our model employs minimal assumptions, we predict that RRM should be a widespread phenomenon in materials exhibiting patterned phase coexistence of electronic domains. This work not only advances fundamental understanding of memory behavior in TMOs but also establishes a much-needed theoretical framework for optimizing device applications.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Distributed out-of-memory NMF on CPU/GPU architectures

We propose an efficient distributed out-of-memory implementation of the non-negative matrix factorization (NMF) algorithm for heterogeneous high-performance-computing systems. The proposed implementation is based on prior work on NMFk, which can perform automatic model selection and extract latent variables and patterns from data. In this work, we extend NMFk by adding support for dense and sparse matrix operation on multi-node, multi-GPU systems. The resulting algorithm is optimized for out-of-memory problems where the memory required to factorize a given matrix is greater than the available GPU memory. Memory complexity is reduced by batching/tiling strategies, and sparse and dense matrix operations are significantly accelerated with GPU cores (or tensor cores when available). Input/output latency associated with batch copies between host and device is hidden using CUDA streams to overlap data transfers and compute asynchronously, and latency associated with collective communications (both intra-node and inter-node) is reduced using optimized NVIDIA Collective Communication Library (NCCL) based communicators. Benchmark results show significant improvement, from 32X to 76x speedup, with the new implementation using GPUs over the CPU-based NMFk. Good weak scaling was demonstrated on up to 4096 multi-GPU cluster nodes with approximately 25,000 GPUs when decomposing a dense 340 Terabyte-size matrix and an 11 Exabyte-size sparse matrix of density 10 -6 .

97 MATHEMATICS AND COMPUTING↗

DOE OSTI2019

Influence of Detwinning on the Shape Memory Effect in Ni{sub 55}Fe{sub 18}Ga{sub 27} Single Crystals

Deformation mechanisms, one-way and two-way shape memory effects were studied in the mode of compression in the [011] single crystal of the Ni{sub 55}Fe{sub 18}Ga{sub 27} alloy where the detwinning occurred during deformation and in the [001] single crystal where the detwinning was forbidden. It was found that the [001] and [011] crystals deformed by different mechanisms during compression to 5% (reorientation was in [001] crystal, and the reorientation and detwinning were in [011] crystal) and from 15 to 20% (the 14 M → L1{sub 0} transition was in [001] crystal and plastic deformation of 14 M phase was in [011]). The compression of both single crystals from 5 to 15% occurred due to the same mechanisms: the 10 M ↔ 14 M transformation and the plastic deformation of the 14 M martensite. The 14 M and L1{sub 0} phases were stable under load, and they transformed to the 10 M martensite on unloading. It was shown that the crystal orientation and detwinning hardly affected the value of the one-way shape memory effect since both crystals were in the 10 M martensite after preliminary deformation. In this case, the transformation of 10 M martensite to the austenite on heating was accompanied by a strain of about 5% and this was the maximum value of the shape memory effect. It was found that the detwinning significantly affected the temperature ranges of strain recovery. In the [011] crystal, the strain recovered in a very narrow interval on heating (1-2°C), whereas in the [001] crystal the shape memory effect was observed in “normal” temperature range (~ 10°C). The detwinning resulted in the formation of a large oriented internal stress during the preliminary deformation that increased the value of the two-way shape memory effect that was observed in [011] crystals in comparison with the [001] crystals.

36 MATERIALS SCIENCE↗

DOE OSTI2018

Shape memory behavior and recovery force of 4D printed textile functional composites

Four-dimensional (4D) printing of multi-directionally reinforced preforms has tremendous potential for the development of next generation functional composites by using the capabilities of 3D printing technology, 3D textile preform design, and polymer shape memory behavior. This paper demonstrates the shape memory behavior and recovery force of 4D printed circular braided tube preforms and their silicone elastomer matrix composites. The preforms were printed by fused deposition modeling using the shape memory polymer (SMP), polylactic acid (PLA). The effects of braiding angle, tube wall thickness, and shape recovery temperature on the shape memory behavior of 4D printed tube preforms and their silicone elastomer matrix composites have been characterized. Measurements of shape recovery forces of the preform and composite were conducted using dynamic mechanical analysis (DMA). The braided microstructural parameters and shape recovery temperature have a significant effect on the preform shape memory behavior. The introduction of the silicone elastomer matrix greatly enhances the shape recovery force, shape recovery ratio, as well as radial compressive failure load of the 4D printed preform/silicone elastomer matrix composite. Finally, building on these results, a potential application for 4D printed textile functional composites is presented.

42 ENGINEERING↗

DOE OSTI2026

Genetic variations and their interaction with thirdhand smoke exposure on anxiety and memory in Collaborative Cross mice

Thirdhand smoke (THS) is linked to adverse health effects, but the effect of genetic variations on behavioral outcomes is poorly understood. To investigate this, we assessed anxiety- and memory-related behaviors in 820 mice from 21 strains of the genetically diverse Collaborative Cross (CC) mouse that were exposed to THS from 4 through 10 weeks of age. Anxiety was evaluated with a light/dark box assay with a previously established risk score system. Females were generally more sensitive: THS reduced anxiety risk in strains CC013, CC019, and CC051, but increased risk in CC036 and CC061, while males showed no significant effects. Memory was tested using passive avoidance: impairments were observed in both sexes in CC016 and CC019, with sex-dependent effects in CC002 and CC051. A genome-wide association study identified 2,347 SNPs associated with anxiety and 1,568 SNPs with memory, with 32 and 85 SNPs, respectively, interacting with THS exposure. Enrichment analyses revealed distinct biological processes underlying susceptibility, including axonogenesis, synapse organization, cognition, and learning and memory. KEGG pathway analysis identified distinct genetic pathways, including GTPase binding and GTPase regulatory activity, that act as critical molecular switches in the brain that regulate synaptic plasticity, dendritic spine structure, and neuronal signaling, directly influencing anxiety-like behaviors and memory formation. These findings show that THS exposure affects neurobehavioral outcomes in a sex- and genotype-dependent manner, highlighting critical gene-environment interactions and providing a foundation for mechanistic insights into THS neurotoxicity

Anxiety↗