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At least 397 records · Page 22

LWIR HgCdTe: Innovative detectors in an incumbent technology

HgCdTe is the current material of choice for high performance imagers operating at relatively high temperatures. Its lack of technological maturity compared with silicon and wide-band gap III-V compounds is more than offset by its outstanding IR sensitivity and by the relatively benign effect of its materials defects. This latter property has allowed non-equilibrium growth techniques, metal oxide chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE), to produce device quality long wavelength infrared (LWIR) HgCdTe even on common substrates like GaAs and GaAs/Si. Detector performance in these exotic materials structures is comparable in many ways with devices in equilibrium-grown material. Lifetimes are similar. RoA values at 77K as high as several hundred have been seen in HgCdTe/GaAs/Si with 9.5 micron cut-off wavelength. HgCdTe/GaAs layers with approx. 15 micron cut-off wavelengths have given average 77K RoAs of greater than 2. Hybrid focal plane arrays have been evaluated with excellent operability.

Tennant, William E.↗

Au/Cr Sputter Coating for the Protection of Alumina During Sliding at High Temperatures

A sputter deposited bilayer coating of gold and chromium was investigated as a potential solid lubricant to protect alumina substrates in applications involving sliding at high temperature. The proposed lubricant was tested in a pin-on-disk tribometer with coated alumina disks sliding against uncoated alumina pins. Three test parameters; temperature, load, and sliding velocity were varied over a wide range in order to determine the performance envelope on the gold/chromium (Au/Cr) solid lubricant film. The tribo-tests were run in an air atmosphere at temperatures of 25 to 1000 C, under loads of 4.9 to 49.0 N and at sliding velocities from 1 to 15 m/sec. Post test analyses included surface profilometry, wear factor determination and scanning electron microscopy/energy dispersive spectroscopy (SEM/EDS) examination of worn surfaces. Compared to unlubricated Al2O3 sliding, the use of the Au/Cr film reduced friction by 30 to 50 percent and wear by one to two orders of magnitude. Increases in test temperature resulted in lower friction and the Au/Cr film continued to provide low friction, about 0.3, even at 1000 C. Pin wear factors and friction were largely unaffected by increasing loads up to 29.4 N. Sliding velocity had essentially no effect on friction, however, increased velocity reduced coating life (total sliding distance). Based upon these research results, the Au/Cr film is a promising lubricant for moderately loaded, low speed applications operating at temperatures as high as 1000 C.

Benoy, Patricia A.↗

Radiation effect on rocket engine performance

The effects of radiation on the performance of modern rocket propulsion systems operating at high pressure and temperature were recognized as a key issue in the design and operation of various liquid rocket engines of the current and future generations. Critical problem areas of radiation coupled with combustion of bipropellants are assessed and accounted for in the formulation of a universal scaling law incorporated with a radiation-enhanced vaporization combustion model. Numerical algorithms are developed and the pertaining data of the Variable Thrust Engine (VTE) and Space Shuttle Main Engine (SSME) are used to conduct parametric sensitivity studies to predict the principal intercoupling effects of radiation. The analysis reveals that low enthalpy engines, such as the VTE, are vulnerable to a substantial performance set back by the radiative loss, whereas the performance of high enthalpy engines such as the SSME, are hardly affected over a broad range of engine operation. Additionally, combustion enhancement by the radiative heating of the propellant has a significant impact in those propellants with high absorptivity. Finally, the areas of research related with radiation phenomena in bipropellant engines are identified.

Chiu, Huei-Huang↗

High-Temperature Electronics: A Role for Wide Bandgap Semiconductors?

It is increasingly recognized that semiconductor based electronics that can function at ambient temperatures higher than 150 C without external cooling could greatly benefit a variety of important applications, especially-in the automotive, aerospace, and energy production industries. The fact that wide bandgap semiconductors are capable of electronic functionality at much higher temperatures than silicon has partially fueled their development, particularly in the case of SiC. It appears unlikely that wide bandgap semiconductor devices will find much use in low-power transistor applications until the ambient temperature exceeds approximately 300 C, as commercially available silicon and silicon-on-insulator technologies are already satisfying requirements for digital and analog very large scale integrated circuits in this temperature range. However, practical operation of silicon power devices at ambient temperatures above 200 C appears problematic, as self-heating at higher power levels results in high internal junction temperatures and leakages. Thus, most electronic subsystems that simultaneously require high-temperature and high-power operation will necessarily be realized using wide bandgap devices, once the technology for realizing these devices become sufficiently developed that they become widely available. Technological challenges impeding the realization of beneficial wide bandgap high ambient temperature electronics, including material growth, contacts, and packaging, are briefly discussed.

Neudeck, Philip G.↗

Formulations for Stronger Solid Oxide Fuel-Cell Electrolytes

Tests have shown that modification of chemical compositions can increase the strengths and fracture toughnesses of solid oxide fuel-cell (SOFC) electrolytes. Heretofore, these solid electrolytes have been made of yttria-stabilized zirconia, which is highly conductive for oxygen ions at high temperatures, as needed for operation of fuel cells. Unfortunately yttria-stabilized zirconia has a high coefficient of thermal expansion, low resistance to thermal shock, low fracture toughness, and low mechanical strength. The lack of strength and toughness are especially problematic for fabrication of thin SOFC electrolyte membranes needed for contemplated aeronautical, automotive, and stationary power-generation applications. The modifications of chemical composition that lead to increased strength and fracture toughness consist in addition of alumina to the basic yttria-stabilized zirconia formulations. Techniques for processing of yttria-stabilized zirconia/alumina composites containing as much as 30 mole percent of alumina have been developed. The composite panels fabricated by these techniques have been found to be dense and free of cracks. The only material phases detected in these composites has been cubic zirconia and a alumina: this finding signifies that no undesired chemical reactions between the constituents occurred during processing at elevated temperatures. The flexural strengths and fracture toughnesses of the various zirconia-alumina composites were measured in air at room temperature as well as at a temperature of 1,000 C (a typical SOFC operating temperature). The measurements showed that both flexural strength and fracture toughness increased with increasing alumina content at both temperatures. In addition, the modulus of elasticity and the thermal conductivity were found to increase and the density to decrease with increasing alumina content. The oxygen-ion conductivity at 1,000 C was found to be unchanged by the addition of alumina.

Bansal, Narottam P.↗

Technology development of a biowaste resistojet, volume 1

The materials research effort conducted in support of a NASA-sponsored biowaste resistojet development program is summarized. The resistojet concept under development is the concentric tube design wherein the final pass of the gases through the thruster is through the resistance heated center tube. To produce high specific impulses, this center tube must operate at very high temperatures and it is this element that is most critical in the design. Because of the corrosive nature of the biowaste gases at high temperature, and because of the limited data available for many potential materials, the subject materials study was conducted.

Phillips, D. G.↗

Ceramic applications in the advanced Stirling automotive engine

The ideal cycle, its application to a practical machine, and the specific advantages of high efficiency, low emissions, multi-fuel capability, and low noise of the stirling engine are discussed. Certain portions of the Stirling engine must operate continuously at high temperature. Ceramics offer the potential of cost reduction and efficiency improvement for advanced engine applications. Potential applications for ceramics in Stirling engines, and some of the special problems pertinent to using ceramics in the Stirling engine are described. The research and technology program in ceramics which is planned to support the development of advanced Stirling engines is outlined.

Tomazic, W. A.↗

Visible GaAs/0.7/P/0.3/ CW heterojunction lasers

The paper reports the first low-threshold red-light-emitting heterojunction laser diodes consisting of lattice-matched Ga(As,P)/(In,Ga)P heteroepitaxial layers. A room-temperature threshold current of 3400 A/sq cm was obtained at a wavelength of about 7000 A; this value is substantially lower than those achieved at this wavelength with (Al,Ga)As lasers. For the first time, continuous-wave laser operation at temperatures as high as 10 C has been obtained for GaAs(1-x)P(x).

Kressel, H.↗

Containerless high-temperature calorimeter

Samples are heated by electron bombardment in high-temperature calorimeter that operates from 1,000 to 3,600 C yet consumes less that 100 watts at temperatures less than 2,500 C. Contamination of samples is kept to minimum by suspending them from wire in vacuum chamber. Various sample slopes such as wires, dishs, spheres, rods, or irregular bodies can be accommodated and only about 100 nq of samples are needed for accurate measurements.

Lacy, L. L.↗

High-temperature microphone system

Pressure fluctuations in air or other gases in an area of elevated temperature are measured using a condenser microphone located in the area of elevated temperature and electronics for processing changes in the microphone capacitance located outside the area the area and connected to the microphone by means of high-temperature cable assembly. The microphone includes apparatus for decreasing the undesirable change in microphone sensitivity at high temperatures. The high temperature cable assembly operates as a half-wavelength transmission line in an AM carrier system and maintains a large temperature gradient between the two ends of the cable assembly. The processing electronics utilizes a voltage controlled oscillator for automatic tuning thereby increasing the sensitivity of the measuring apparatus.

Zuckerwar, A. J.↗

Development of non-volatile semiconductor memory

A 256 word by 8-bit random access memory chip was developed utilizing p channel, metal gate metal-nitride-oxide-silicon (MNOS) technology; with operational characteristics of a 2.5 microsecond read cycle, a 6.0 microsecond write cycle, 800 milliwatts of power dissipation; and retention characteristics of 10 to the 8th power read cycles before data refresh and 5000 hours of no power retention. Design changes were implemented to reduce switching currents that caused parasitic bipolar transistors inherent in the MNOS structure to turn on. Final wafer runs exhibited acceptable yields for a die 250 mils on a side. Evaluation testing was performed on the device in order to determine the maturity of the device. A fixed gate breakdown mechanism was found when operated continuously at high temperature.

Heikkila, W. W.↗

Phase 1 of the First Solar Small Power System Experiment (experimental System No. 1). Volume 3: Appendix E - N

The design of a solar electric power plant for a small community is reported. Topics covered include: (1) control configurations and interface requirements for the baseline power system; (2) annual small power system output; (3) energy requirements for operation of the collectors and control building; (4) life cycle costs and reliability predictions; (5) thermal conductivities and costs of receiver insulation materials; (6) transient thermal modelling for the baseline receiver/thermal transport system under normal and inclement operating conditions; (7) high temperature use of sodium; (8) shading in a field of parabolic collectors; and (9) buffer storage materials.

Clark, T. B.↗

Producing Silicon Carbide for Semiconductor Devices

Processes proposed for production of SiC crystals for use in semiconductors operating at temperatures as high as 900 degrees C. Combination of new processes produce silicon carbide chips containing epitaxial layers. Chips of SiC first grown on porous carbon matrices, then placed in fluidized bed, where additional layer of SiC grows. Processes combined to yield complete process. Liquid crystallization process used to make SiC particles or chips for fluidized-bed process.

Hsu, G. C.↗

Magnesium doping of efficient GaAs and Ga(0.75)In(0.25)As solar cells grown by metalorganic chemical vapor deposition

Magnesium has been substituted for zinc in GaAs and Ga(0.75)In(0.25)As solar cells grown by metalorganic chemical vapor deposition (MOCVD). Bis(cyclopentadienyl)magnesium (Cp2Mg) is used as the MOCVD transport agent for Mg. Full retention of excellent material quality and efficient cell performance results. The substitution of Mg for Zn would enhance the abruptness and reproducibility of doping profiles, and facilitate high temperature processing and operation, due to the much lower diffusion coefficient of Mg, relative to Zn, in these materials.

Lewis, C. R.↗