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At least 397 records · Page 22
All sourcesNASA NTRSDOE OSTI
NASA NTRS1993

Electronic characterization of defects in narrow gap semiconductors

The study of point defects in semiconductors has a long and honorable history. In particular, the detailed understanding of shallow defects in common semiconductors traces back to the classic work of Kohn and Luttinger. However, the study of defects in narrow gap semiconductors represents a much less clear story. Here, both shallow defects (caused by long range potentials) and deep defects (from short range potentials) are far from being completely understood. In this study, all results are calculational and our focus is on the chemical trend of deep levels in narrow gap semiconductors. We study substitutional (including antisite), interstitial and ideal vacancy defects. For substitutional and interstitial impurities, the efects of relaxation are included. For materials like Hg(1-x)Cd(x)Te, we study how the deep levels vary with x, of particular interest is what substitutional and interstitial atoms yield energy levels in the gap i.e. actually produce deep ionized levels. Also, since the main technique utilized is Green's functions, we include some summary of that method.

Patterson, James D.↗
NASA NTRS1993

An application of small-gap equations in sealing devices

The study of a thin, incompressible Newtonian fluid layer trapped between two almost parallel, sliding surfaces has been actively pursued in the last decades. This subject includes lubrication applications such as slider bearings or the sealing of non-pressurized fluids with rubber rotary shaft seals. In the present work we analyze numerically the flow of lubricant fluid through a micro-gap of sealing devices. The first stage of this study is carried out assuming that a 'small-gap' parameter delta attains an extreme value in the Navier-Stokes equations. The precise meaning of small-gap is achieved by the particular limit delta = 0 which, within the bounds of the hypotheses, predicts transport of lubricant through the sealed area by centrifugal instabilities. Numerical results obtained with the penalty function approximation in the finite element method are presented. In particular, the influence of inflow and outflow boundary conditions, and their impact in the simulated flow, are discussed.

Vionnet, Carlos A.↗
NASA NTRS1994

Electronic characterization of defects in narrow gap semiconductors

We use a Green's function technique to calculate the position of deep defects in narrow gap semiconductors. We consider substitutional (including antisite), vacancy, and interstitial (self and foreign) deep defects. We also use perturbation theory to look at the effect of nonparabolic bands on shallow defect energies and find nonparabolicity can increase the binding by 10 percent or so. We consider mercury cadmium telluride (MCT), mercury zinc telluride (MZT), and mercury zinc selenide (MZS). For substitutional and interstitial defects we look at the situation with and without relaxation. For substitutional impurities in MCT, MZT, and MZS, we consider x (the concentration of Cd or Zn) in the range 0.1 less than x less than 0.3 and also consider appropriate x so E(sub g) = 0.1 eV for each of the three compounds. We consider several cation site s-like deep levels and anion site p-like levels. For E(sub g) = 0.1 eV, we also consider the effects of relaxation. Similar comments apply to the interstitial deep levels whereas no relaxation is considered for the ideal vacancy model. Relaxation effects can be greater for the interstitial than the substitutional cases. Specific results are given in figures and tables and comparison to experiment is made in a limited number of cases. We find, for example, that I, Se, S, Rn, and N are possible cation site, s-like deep levels in MCT and Zn and Mg are for anion site, p-like levels (both levels for substitutional cases). The corresponding cation and anion site levels for interstitial deep defects are (Au, Ag, Hg, Cd, Cu, Zn) and (N, Ar, O, F). For the substitutional cases we have some examples of relaxation moving the levels into the band gap, whereas for the interstitial case we have examples where relaxation moves it out of the band gap. Future work involves calculating the effects of charge state interaction and seeing the effect of relaxation on vacancy levels.

Patterson, James D.↗
NASA NTRS1994

High efficiency GaP power conversion for Betavoltaic applications

AstroPower is developing a gallium phosphide (GaP) based energy converter optimized for radio luminescent light-based power supplies. A 'two-step' or 'indirect' process is used where a phosphor is excited by radioactive decay products to produce light that is then converted to electricity by a photovoltaic energy converter. This indirect conversion of beta-radiation to electrical energy can be realized by applying recent developments in tritium based radio luminescent (RL) light sources in combination with the high conversion efficiencies that can be achieved under low illumination with low leakage, gallium phosphide based devices. This tritium to light approach is inherently safer than battery designs that incorporate high activity radionuclides because the beta particles emitted by tritium are of low average energy and are easily stopped by a thin layer of glass. GaP layers were grown by liquid phase epitaxy and p/n junction devices were fabricated and characterized for low light intensity power conversion. AstroPower has demonstrated the feasibility of the GaP based energy converter with the following key results: 23.54 percent conversion efficiency under 968 muW/sq cm 440 nm blue light, 14.59 percent conversion efficiency for 2.85 muW/sq cm 440 nm blue light, and fabrication of working 5 V array. We have also determined that at least 20 muW/sq cm optical power is available for betavoltaic power systems. Successful developments of this device is an enabling technology for low volume, safe, high voltage, milliwatt power supplies with service lifetimes in excess of 12 years.

Sims, Paul E.↗
NASA NTRS1995

Electronic characterization of defects in narrow gap semiconductors: Comparison of electronic energy levels and formation energies in mercury cadmium telluride, mercury zinc telluride, and mercury zinc selenide

The project has evolved to that of using Green's functions to predict properties of deep defects in narrow gap materials. Deep defects are now defined as originating from short range potentials and are often located near the middle of the energy gap. They are important because they affect the lifetime of charge carriers and hence the switching time of transistors. We are now moving into the arena of predicting formation energies of deep defects. This will also allow us to make predictions about the relative concentrations of the defects that could be expected at a given temperature. The narrow gap materials mercury cadmium telluride (MCT), mercury zinc telluride (MZT), and mercury zinc selenide (MZS) are of interest to NASA because they have commercial value for infrared detecting materials, and because there is a good possibility that they can be grown better in a microgravity environment. The uniform growth of these crystals on earth is difficult because of convection (caused by solute depletion just ahead of the growing interface, and also due to thermal gradients). In general it is very difficult to grow crystals with both radial and axial homogeneity.

Patterson, James D.↗
NASA NTRS1994

Dynamics of binary-disk interaction. 1: Resonances and disk gap sizes

We investigate the gravitational interaction of a generally eccentric binary star system with circumbinary and circumstellar gaseous disks. The disks are assumed to be coplanar with the binary, geometrically thin, and primarily governed by gas pressure and (turbulent) viscosity but not self-gravity. Both ordinary and eccentric Lindblad resonances are primarily responsible for truncating the disks in binaries with arbitrary eccentricity and nonextreme mass ratio. Starting from a smooth disk configuration, after the gravitational field of the binary truncates the disk on the dynamical timescale, a quasi-equilibrium is achieved, in which the resonant and viscous torques balance each other and any changes in the structure of the disk (e.g., due to global viscous evolution) occur slowly, preserving the average size of the gap. We analytically compute the approximate sizes of disks (or disk gaps) as a function of binary mass ratio and eccentricity in this quasi-equilibrium. Comparing the gap sizes with results of direct simulations using the smoothed particle hydrodynamics (SPH), we obtain a good agreement. As a by-product of the computations, we verify that standard SPH codes can adequately represent the dynamics of disks with moderate viscosity, Reynolds number R approximately 10(exp 3). For typical viscous disk parameters, and with a denoting the binary semimajor axis, the inner edge location of a circumbinary disk varies from 1.8a to 2.6a with binary eccentricity increasing from 0 to 0.25. For eccentricities 0 less than e less than 0.75, the minimum separation between a component star and the circumbinary disk inner edge is greater than a. Our calculations are relevant, among others, to protobinary stars and the recently discovered T Tau pre-main-sequence binaries. We briefly examine the case of a pre-main-sequence spectroscopic binary GW Ori and conclude that circumbinary disk truncation to the size required by one proposed spectroscopic model cannot be due to Linblad resonances, even if the disk is nonviscous.

Artymowicz, Pawel↗
NASA NTRS1995

Better Gas-Gap Thermal Switches For Sorption Compressors

Gas-gap thermal switches associated with sorption compressors of some heat pumps and cryogenic systems designed for higher performance, according to proposal, by introducing controlled turbulent flows into gas gaps. Utilizes convection in turbulent flow to transfer heat at greater rate. Design takes advantage of flow of working fluid. Working fluid also serve as heat transfer medium in gas gap.

Bhandari, Pradeep↗
NASA NTRS1996

Electronic Characterization of Defects in Narrow Gap Semiconductors-Comparison of Electronic Energy Levels and Formation Energies in Mercury Cadmium Telluride, Mercury Zinc Telluride, and Mercury Zinc Selenide

We have used a Green's function technique to calculate the energy levels and formation energy of deep defects in the narrow gap semiconductors mercury cadmium telluride (MCT), mercury zinc telluride (MZT) and mercury zinc selenide (MZS). The formation energy is calculated from the difference between the total energy with an impurity cluster and the total energy for the perfect crystal. Substitutional (including antisite), interstitial (self and foreign), and vacancy deep defects are considered. Relaxation effects are calculated (with molecular dynamics). By use of a pseudopotential, we generalize the ideal vacancy model so as to be able to consider relaxation for vacancies. Different charge states are considered and the charged state energy shift (as computed by a modified Haldane-Anderson model) can be twice that due to relaxation. Different charged states for vacancies were not calculated to have much effect on the formation energy. For all cases we find deep defects in the energy gap only for cation site s-like orbitals or anion site p-like orbitals, and for the substitutional case only the latter are appreciably effected by relaxation. For most cases for MCT, MZT, MZS, we consider x (the concentration of Cd or Zn) in the range appropriate for a band gap of 0.1 eV. For defect energy levels, the absolute accuracy of our results is limited, but the precision is good, and hence chemical trends are accurately predicted. For the same reason, defect formation energies are more accurately predicted than energy level position. We attempt, in Appendix B, to calculate vacancy formation energies using relatively simple chemical bonding ideas due to Harrison. However, these results are only marginally accurate for estimating vacancy binding energies. Appendix C lists all written reports and publications produced for the grant. We include abstracts and a complete paper that summarizes our work which is not yet available.

Patterson, James D.↗
NASA NTRS2001

Passive Gas-Gap Heat Switches for Use in Adiabatic Demagnetization Refrigerators

We have designed, built, and tested a gas gap heat switch that works passively, without the need for a separate, thermally activated getter. This switch uses He-3 condensed as a thin film on alternating plates of copper. The switch is thermally conductive at temperatures above about 0.2 K, and is insulating if either end of the switch is below about 0.15 K. The "on" conductance (7 mW/K at 0.25K) is limited by the surface area and gap between the copper leaves, the saturated vapor pressure of the He-3, and the Kapitza boundary resistance between the He-3 and the copper. The "off" conductance is determined by the helium containment shell which physically supports the two conductive ends. We have also designed and are building passive gas gap heat switches which will passively turn off near 1 K and 4 K. For these switches we rely on the rapidly changing vapor pressure of He-4 above neon or copper substrates, respectively, when the coverage is less than one monolayer. The different binding energies of the He-4 to the neon or copper give rise to the different temperatures where the switches transition between the on and off states.

Shirron, P. J.↗
NASA NTRS2001

Band-gap Engineering in Sputter Deposited Amorphous/Microcrystalline Sc(x)Ga(1-x)N

Reactive sputtering was used to grow thin films of Sc(x)Ga(1-x)N with scandium concentrations of 20%-70% on quartz substrates at temperatures of 300-675 K. X-ray diffraction (XRD) of the films showed either weak or no structure, suggesting the films are amorphous or microcrystalline. Optical absorption spectra were taken of each sample and the optical band gap was determined. The band gap varied linearly with increasing Ga concentration between 2.0 and 3.5 eV. Ellipsometry was used to confirm the band gap measurements and provide optical constants in the range 250-1200 nm. ScN and GaN have different crystal structures (rocksalt and wurzite, respectively), and thus may form a heterogeneous mixture as opposed to an alloy. Since the XRD data were inconclusive, bilayers of ScN/GaN were grown and optical absorption spectra taken. A fundamental difference in the spectra between the bilayer films and alloy films was seen, suggesting the films are alloys, not heterogeneous mixtures.

Little, Mark E.↗
NASA NTRS2003

Gap-Opening, Disk Clearing, and the Survival of the Regular Satellites of Jupiter and Saturn

It is only recently that the theory of disk-companion interactions yields migration rates due to the gas tidal torque that are in agreement with numerical simulations and up to an order of magnitude slower than previous estimates. Also, for a weakly turbulent disk, the gap size is controlled primarily by the damping length of acoustic waves launched by the secondary at Lindblad resonances, which in turn depends on whether the waves are 2D or 3D. At least for small azimuthal wavenumbers this damping length is of the order of the radial location of the Lindblad resonance. This may have important consequences for disk dispersal in satellite systems. In the case of Jupiter, it means that the inner Galilean satellites may have jointly opened a gap. On the other hand, in Saturn's system the satellites inside of Titan are probably too small to have opened gaps in the gas disk at the time of their formation; but the possibility exists that, by effectively clearing the gas disk inside its own orbit, Titan may have allowed smaller satellites to survive, depending on whether Titan can clear the disk in a timescale comparable to the migration rates due to gas drag and gas tidal torque for these objects.

Estrada, P. R.↗
NASA NTRS1989

Effects of microgravity on liposome-reconstituted cardiac gap junction channeling activity

Effects of microgravity on cardiac gap junction channeling activity were investigated aboard NASA zero-gravity aircraft. Liposome-reconstituted gap junctions were assayed for channel function during free-fall, and the data were compared with channeling at 1 g. Control experiments tested for 0 g effects on the structural stability of liposomes, and on the enzyme-substrate signalling system of the assay. The results demonstrate that short periods of microgravity do not perturb reconstituted cardiac gap junction channeling activity.

Heart/physiology↗
NASA NTRS2005

Fabrication of 3-D Photonic Band Gap Crystals Via Colloidal Self-Assembly

The behavior of photons in a Photonic Crystals, PCs, is like that of electrons in a semiconductor in that, it prohibits light propagation over a band of frequencies, called Photonic Band Gap, PBG. Photons cannot exist in these band gaps like the forbidden bands of electrons. Thus, PCs lend themselves as potential candidates for devices based on the gap phenomenon. The popular research on PCs stem from their ability to confine light with minimal losses. Large scale 3-D PCs with a PBG in the visible or near infra red region will make optical transistors and sharp bent optical fibers. Efforts are directed to use PCs for information processing and it is not long before we can have optical integrated circuits in the place of electronic ones.

Subramaniam, Girija↗
NASA NTRS2006

Grid Gap Measurement for an NSTAR Ion Thruster

The change in gap between the screen and accelerator grids of an engineering model NSTAR ion optics assembly was measured during thruster operation with beam extraction. The molybdenum ion optics assembly was mounted onto an engineering model NSTAR ion thruster. The measurement technique consisted of measuring the difference in height of an alumina pin relative to the downstream accelerator grid surface. The alumina pin was mechanically attached to the center aperture of the screen grid and protruded through the center aperture of the accelerator grid. The change in pin height was monitored using a long distance microscope coupled to a digital imaging system. Transient and steady-state hot grid gaps were measured at three power levels: 0.5, 1.5 and 2.3 kW. Also, the change in grid gap was measured during the transition between power levels, and during the startup with high voltage applied just prior to discharge ignition. Performance measurements, such as perveance, electron backstreaming limit and screen grid ion transparency, were also made to confirm that this ion optics assembly performed similarly to past testing. Results are compared to a prior test of 30 cm titanium ion optics.

Diaz, Esther M.↗
NASA NTRS2006

Space Human Factors Engineering Gap Analysis Project Final Report

Humans perform critical functions throughout each phase of every space mission, beginning with the mission concept and continuing to post-mission analysis (Life Sciences Division, 1996). Space missions present humans with many challenges - the microgravity environment, relative isolation, and inherent dangers of the mission all present unique issues. As mission duration and distance from Earth increases, in-flight crew autonomy will increase along with increased complexity. As efforts for exploring the moon and Mars advance, there is a need for space human factors research and technology development to play a significant role in both on-orbit human-system interaction, as well as the development of mission requirements and needs before and after the mission. As part of the Space Human Factors Engineering (SHFE) Project within the Human Research Program (HRP), a six-month Gap Analysis Project (GAP) was funded to identify any human factors research gaps or knowledge needs. The overall aim of the project was to review the current state of human factors topic areas and requirements to determine what data, processes, or tools are needed to aid in the planning and development of future exploration missions, and also to prioritize proposals for future research and technology development.

Hudy, Cynthia↗
NASA NTRS2007

Requirements and Technology Advances for Global Wind Measurement with a Coherent Lidar: A Shrinking Gap

Early concepts to globally measure vertical profiles of vector horizontal wind from space planned on an orbit height of 525 km, a single pulsed coherent Doppler lidar system to cover the full troposphere, and a continuously rotating telescope/scanner that mandated a vertical line of sight wind profile from each laser shot. Under these conditions system studies found that laser pulse energies of approximately 20 J at 10 Hz pulse repetition rate with a rotating telescope diameter of approximately 1.5 m was required. Further requirements to use solid state laser technology and an eyesafe wavelength led to the relatively new 2-micron solid state laser. With demonstrated pulse energies near 20 mJ at 5 Hz, and no demonstration of a rotating telescope maintaining diffraction limited performance in space, the technology gap between requirements and demonstration was formidable. Fortunately the involved scientists and engineers set out to reduce the gap, and through a combination of clever ideas and technology advances over the last 15 years, they have succeeded. This paper will detail the gap reducing factors and will present the current status.

Kavaya, Michael J.↗
NASA NTRS2007

Energy Band Gap, Intrinsic Carrier Concentration and Fermi Level of CdTe Bulk Crystal between 304 K and 1067 K

Optical transmission measurements were performed on CdTe bulk single crystal. It was found that when a sliced and polished CdTe wafer was used, a white film started to develop when the sample was heated above 530 K and the sample became opaque. Therefore, a bulk crystal of CdTe was first grown in the window area by physical vapor transport; the optical transmission was then measured and from which the energy band gap was derived between 304 and 1067 K. The band gaps of CdTe can be fit well as a function of temperature using the Varshini expression: Eg (e V) = 1.5860 - 5.9117xl0(exp -4) T(sup 2)/(T + 160). Using the band gap data, the high temperature electron-hole equilibrium was calculated numerically by assuming the Kane's conduction band structure and a heavy-hole parabolic valance band. The calculated intrinsic carrier concentrations agree well with the experimental data reported previously. The calculated intrinsic Fermi levels between 270 and 1200 K were also presented.

Su, Ching-Hua↗
NASA NTRS2010

Development and Evaluation of a Cloud-Gap-Filled MODIS Daily Snow-Cover Product

The utility of the Moderate Resolution Imaging Spectroradiometer (MODIS) snow-cover products is limited by cloud cover which causes gaps in the daily snow-cover map products. We describe a cloud-gap-filled (CGF) daily snowcover map using a simple algorithm to track cloud persistence, to account for the uncertainty created by the age of the snow observation. Developed from the 0.050 resolution climate-modeling grid daily snow-cover product, MOD10C1, each grid cell of the CGF map provides a cloud-persistence count (CPC) that tells whether the current or a prior day was used to make the snow decision. Percentage of grid cells "observable" is shown to increase dramatically when prior days are considered. The effectiveness of the CGF product is evaluated by conducting a suite of data assimilation experiments using the community Noah land surface model in the NASA Land Information System (LIS) framework. The Noah model forecasts of snow conditions, such as snow-water equivalent (SWE), are updated based on the observations of snow cover which are obtained either from the MOD1 OC1 standard product or the new CGF product. The assimilation integrations using the CGF maps provide domain averaged bias improvement of -11 %, whereas such improvement using the standard MOD1 OC1 maps is -3%. These improvements suggest that the Noah model underestimates SWE and snow depth fields, and that the assimilation integrations contribute to correcting this systematic error. We conclude that the gap-filling strategy is an effective approach for increasing cloud-free observations of snow cover.

Hall, Dorothy K.↗