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Single crystal silicon p-n junction solar cells made with low resistivity substrates show poorer solar energy conversion efficiency than traditional theory predicts. The physical mechanisms responsible for this discrepancy are identified and characterized. The open circuit voltage in shallow junction cells of about 0.1 ohm/cm substrate resistivity is investigated under AMO (one sun) conditions.
A program having the overall objective of growing wide, thin silicon dendritic web crystals quasi-continuously from a semi-automated facility is discussed. The design considerations and fabrication of the facility as well as the test and operation phase are covered; detailed engineering drawings are included as an appendix. During the test and operation phase of the program, more than eighty growth runs and numerous thermal test runs were performed. At the conclusion of the program, 2.4 cm wide web was being grown at thicknesses of 100 to 300 micrometers. As expected, the thickness and growth rate are closely related. Solar cells made from this material were tested at NASA-Lewis and found to have conversion efficiencies comparable to devices fabricated from Czochralski material.
The development of a process for fabricating 2 x 4 cm back surface field silicon solar cells having screen printed wraparound contacts is described. This process was specifically designed to be amenable for incorporation into the automated nonvacuum production line. Techniques were developed to permit the use of screen printing for producing improved back surface field structures, wraparound dielectric layers, and wraparound contacts. The optimized process sequence was then used to produce 1852 finished cells. Tests indicated an average conversion efficiency of 11% at AMO and 28 C, with an average degradation of maximum power output of 1.5% after boiling water immersion or thermal shock cycling. Contact adherence was satisfactory after these tests, as well as long term storage at high temperature and high humidity.
Infrared upconversion is a technique that converts linearly polarized infrared photons to photons of higher frequency. The technique can be applied advantageously to the detection of IR radiation because the upconverted signal can be detected by photon-counting devices available for the visible spectral region. In addition, unlike presently available IR detectors, an upconversion device can provide sensitivity to IR radiation without the need for cryogenic cooling. Infrared upconversion was first demonstrated in 1961. By 1974, approximately 100% quantum conversion efficiency and a bandwidth of 1.81 microns had been attained. Photometric detection of IR radiation from various astronomical objects had also been demonstrated. Research is presently under way on the application of upconversion to astronomical spectroscopy and to imaging. The major drawback to the upconversion technique is the sheer bulk of the apparatus involved. It is anticipated that this problem can be overcome by applying the developing technology of integrated optics.
Aerospace and terrestrial applications of thermionic direct energy conversion and advances in direct energy conversion (DEC) technology are surveyed. Electrode materials, the cesium plasma drop (the difference between the barrier index and the collector work function), DEC voltage/current characteristics, conversion efficiency, and operating temperatures are discussed. Attention is centered on nuclear reactor system thermionic DEC devices, for in-core or out-of-core operation. Thermionic fuel elements, the radiation shield, power conditions, and a waste heat rejection system are considered among the thermionic DEC system components. Terrestrial applications include topping power systems in fossil fuel and solar power generation.
Effects of quantum mechanical interferences on third-order susceptibilities in molecules are studied. First principle calculations for molecular hydrogen are presented and shown to agree with results derived from experimental stimulated Raman gain and spontaneous Raman cross-section data. 10 percent third-harmonic conversion efficiency in H2 at 1 atm without phase matching should require a 150 MW per sq cm at 4.81 microns. As little as 5.9-MW power is sufficient when the beam is properly focused. Resonance Raman scattering (RRS) is proposed for experimentally investigating the interference effects, which tend to reduce the strength of third-order nonlinear susceptibilities.
Recent parametric studies of alternate SPS design concepts have shown that the concept appears technically feasible. The parametric studies were based on the use of advanced technology silicon solar cells for solar energy conversion. Solar array blanket unit masses of 0.31 to 0.46 kg/sq m were investigated. Conversion efficiencies of 15 to 17 percent air mass zero (AMO at 247 K) with a concentration ratio of two were considered. The systems were sized for a ground power output of 10 GW. To the level of detail studied, no design or operational problems were encountered that did not appear amenable to solution; however, the economic viability of the SPS concepts studied is obviously dependent upon a combination of technology advancement and/or the costs of competitive sources.
An imaging upconverter has been constructed which is suitable for use in the study of the thermal 10-micron radiation from astronomical sources. The infrared radiation is converted to visible radiation by mixing in a 1-cm-long proustite crystal. The phase-matched 2-kayser bandpass is tunable from 9 to 11 microns. The conversion efficiency is 2 by 10 to the -7th power and the field of view of 40 arc seconds on the sky contains several hundred picture elements, approximately diffraction-limited resolution in a large telescope. The instrument has been used in studies of the sun, moon, Mercury, and VY Canis Majoris.
High-frequency discharge in oxygen can be used to prepare superoxides of alkali and alkaline-earth metals. Since no direct-current discharge at the electrodes is present, no sputtering can contaminate the product, hence a high conversion efficiency.
Development of coal feed systems for coal gasification, fluidized bed combustion, and magnetohydrodynamic applications is discussed. Process operations experience, energy conversion efficiency, and environment effects are among the factors considered.
The use of rotary feeders in the coal gasification process is described with emphasis on the efficient conversion of coal to clean gaseous fuels. Commercial applications of the rotary feeder system are summarized.
Silicon and gallium arsenide solar cell developments are reviewed. The rationale for these efforts are cited showing the reasons for placing emphasis on survivability as well as high conversion efficiency.
The greatest gains in solar energy conversion efficiency of p-n-junction silicon solar cells come from increasing the open-circuit voltage V sub OC; it is important to understand and characterize the material parameters that limit the V sub OC. Strong experimental evidence exists to support the assertion that either an anomalously large minority carrier charge storage or an anomalously small minority carrier lifetime in the quasi-neutral emitter region limits the open circuit voltage. A method is presented for measuring charge storage and effective lifetime. Static and transient measurements are analyzed using physical models of the solar cell characteristics. This analysis yields the emitter charge storage and life-time, which then can be related to the various physical mechanisms, such as energy band gap shrinkage, that have been proposed earlier as responsible for limiting V sub OC.
Non-reflective vertical junction silicon cells provide high conversion efficiency radiation-resistant solar cells. New techniques of oxidation growth and the use of photolithography enable the use of an orientation dependent etch producing grooves 5 to 10 microns wide over 100 microns deep. These silicon wafers are then processed into solar cells with all of the processes performed at temperatures compatible with producing high efficiency solar cells. Most of the photogenerated carriers are created in the walls where they are within a few microns of the collecting junction. Consequently, degradation of carrier diffusion length due to radiation has a considerably reduced effect on collection efficiency. These 2 cm x 2 cm vertical junction silicon solar cells have exceeded 13% AMO efficiency and have shown superior radiation resistance.
Low cost polycrystalline silicon solar cells supported on substrates were prepared by depositing successive layers of polycrystalline silicon containing appropriate dopants over supporting substrates of a member selected from the group consisting of metallurgical grade polycrystalline silicon, graphite and steel coated with a diffusion barrier of silica, borosilicate, phosphosilicate, or mixtures thereof such that p-n junction devices were formed which effectively convert solar energy to electrical energy. To improve the conversion efficiency of the polycrystalline silicon solar cells, the crystallite size in the silicon was substantially increased by melting and solidifying a base layer of polycrystalline silicon before depositing the layers which form the p-n junction.
A controlled growth, heat-flow and cool-down process is described that yielded silicon with a high degree of single crystallinity. Even when the seed melted out, very large grains formed. Solar cell samples made from cast material yielded conversion efficiency of over 9%. Representative characterizations of grown silicon demonstrated a dislocation density of less than 100/sq cm and a minority carrier diffusion length of 31 micron. The source of silicon carbide in silicon ingots was identified to be from graphite retainers in contact with silica crucibles. Higher growth rates were achieved with the use of a graphite plug at the bottom of the silica crucible.
The performance and stability characteristics of a 10 kVA photovoltaic power system are studied using linear Bode analysis and a nonlinear analog simulation. Power conversion efficiencies, system stability, and system transient performance results are given for system operation at various levels of solar insolation. Additionally, system operation and the modeling of system components for the purpose of computer simulation are described.
Supercooling of silicon-tin alloy melts was studied. Values as high as 78 C at 1100 C and 39 C at 1200 C were observed, corresponding to supersaturation parameter values 0.025 and 0.053 at 1050 C and 1150 C, respectively. The interaction of tin with silane gas streams was investigated over the temperature range 1000 to 1200 C. Single-pass conversion efficiencies exceeding 30% were obtained. The growth habit of spontaneously-nucleated surface growth was determined to be consistent with dendritic and web growth from singly-twinned triangular nucleii. Surface growth of interlocking silicon crystals, thin enough to follow the surface of the liquid and with growth velocity as high as 5 mm/min, was obtained. Large area single-crystal growth along the melt surface was not achieved. Small single-crystal surface growth was obtained which did not propagate beyond a few millimeters.