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At least 397 records · Page 22
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Thermal evolution of ferroelectric behavior in epitaxial Hf 0.5 Zr 0.5 O 2

In this paper, we report a cryogenic-temperature study on the evolution of the ferroelectric properties of epitaxial Hf 0.5 Zr 0.5 O 2 thin films on silicon. Wake-up, endurance, and fatigue of these films are found to be intricately correlated, strongly hysteretic, and dependent on available thermal energy. Field-dependent measurements reveal a decrease in polarization with temperature, which has been determined not to be an intrinsic change of the material property, rather a demonstration of the increase in the coercive bias of the material. Our findings suggest that a deficiency in thermal energy suppresses the mobility of defects presumed to be oxygen vacancies during wake-up and trapped injected charge during fatigue, which is responsible for polarization evolution during cycling. This permits accelerated wake-up and fatigue effects at high temperatures where thermal energy is abundant but delays these effects at cryogenic temperatures.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Ferroelectric polarization retention with scaling of Hf 0.5 Zr 0.5 O 2 on silicon

In this paper, we investigate the polarization retention of Hf 0.5 Zr 0.5 O 2 (HZO)-based metal–ferroelectric–insulator–Si (MFIS) capacitors with scaling of the ferroelectric (FE) layer thickness from 5 nm to 20 nm. The capacitors have a constant interface layer capacitance of ~24 μF/cm 2 , developed due to the integration of HZO on a degenerated Si as a bottom conducting electrode. It is observed that 20 nm HZO films show a small change (~5%) in FE polarization (P FE ) between short (10 μs) and long (6 s) retention time, while 5-nm-thick films exhibit a large difference (~90%). Furthermore, the dependence of P FE retention loss on the FE thickness can be understood by the presence of a built-in electric field in the FE layer, generated due to charge continuity between the FE and the interface layers in the ground state without any external bias. A direct experimental observation also confirms that a residual voltage is developed at the node between the metal–ferroelectric–metal and metal–oxide–semiconductor capacitors connected in series, in the ground state with zero external bias. It is expected that a proper understanding of the built-in field developed in the FE layer in an MFIS stack is crucial for FE memory retention characteristics.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Correlation between ferroelectricity and ferroelectric orthorhombic phase of Hf x Zr 1-x O 2 thin films using synchrotron x-ray analysis

The change in the interplanar spacing ( d -spacing) including the ferroelectric orthorhombic (O) phase in the low-temperature fabricated Hf x Zr 1-x O 2 (HZO) films was studied using synchrotron grazing-incidence wide-angle x-ray scattering analysis. The 10-nm-thick HZO films were fabricated by thermal and plasma-enhanced atomic layer deposition (TH- and PE-ALD) methods using H 2 O gas and O 2 plasma as oxidants, respectively, and a post-metallization annealing (PMA) was performed at 300–400 °C. The d -spacing of the mixture of (111)-, (101)-, and (111)-planes of O, tetragonal (T), and cubic (C) phases, respectively, for the TH- and PE-ALD HZO films increased up to 2.99 Å with an increase in PMA temperature, while the d -spacing estimated by conventional x-ray diffraction was 2.92 Å regardless of the PMA temperature. The remanent polarization (2 P r = P r + - P r - ) of the HZO films increased as the PMA temperature increased. It is clear that the 2 P r value satisfied a linear relationship as a function of the d -spacing of O(111)/T(101)/C(111) phases. Furthermore, the wake-up effect was found to depend on the ferroelectric O phase formation. The wake-up effect was significantly reduced in both the TH- and PE-ALD HZO films after the PMA at 400 °C due to the increase in the ferroelectric O phase formation. The leakage current density ( J )–electric field properties of the PE-ALD HZO film with the lowest d -spacing were divided into three steps, such as low, middle, and large J values, in the wake-up (10 3 cycles), pristine (10 0 cycle), and fatigue (10 7 cycles) states, respectively. Therefore, an analysis of the ferroelectric O phase is very important for understanding the ferroelectricity including endurance.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Phase transitions in Zr at sub-nanosecond time scales

Here solid-solid phase transitions are investigated in Zr thin films using shock compression induced by a short laser pulse (<1 ns). Shock wave profiles are measured at free surfaces for films of different thicknesses (a few micrometers) using chirped-pulse line velocimetry with 10 ps time resolution. Experiments are performed at pressures up to ~50 GPa, which is sufficient to reach the ω and β phases under equilibrium conditions. The shock wave structures are analyzed using a general Lagrangian analysis method, which allows for the calculation of stress–strain paths and assessments of phase transition behavior. In agreement with recent short laser pulse experiments using ultra-fast x-ray diffraction, we do not find any clear evidence of the α–ω transition, though this would be expected from the phase diagram. Instead, we infer a direct transformation to a metastable β-phase at lower shock pressures (<20 GPa) and equilibrium β at higher pressures. Through the velocimetry analysis, we find α–β transformation onset times of less than ~100 ps and completion times of less than ~200 ps.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Flexible machine-learning interatomic potential for simulating structural disordering behavior of Li 7 La 3 Zr 2 O 12 solid electrolytes

Batteries based on solid-state electrolytes, including Li 7 La 3 Zr 2 O 12 (LLZO), promise improved safety and increased energy density; however, atomic disorder at grain boundaries and phase boundaries can severely deteriorate their performance. Machine-learning (ML) interatomic potentials offer a uniquely compelling solution for simulating chemical processes, rare events, and phase transitions associated with these complex interfaces by mixing high scalability with quantum-level accuracy, provided that they can be trained to properly address atomic disorder. To this end, we report the construction and validation of an ML potential that is specifically designed to simulate crystalline, disordered, and amorphous LLZO systems across a wide range of conditions. The ML model is based on a neural network algorithm and is trained using ab initio data. Performance tests prove that the developed ML potential can predict accurate structural and vibrational characteristics, elastic properties, and Li diffusivity of LLZO comparable to ab initio simulations. As a demonstration of its applicability to larger systems, we show that the potential can correctly capture grain boundary effects on diffusivity, as well as the thermal transition behavior of LLZO. Here these examples show that the ML potential enables simulations of transitions between well-defined and disordered structures with quantum-level accuracy at speeds thousands of times faster than ab initio methods.

25 ENERGY STORAGE↗
DOE OSTI2022

Robust low-temperature (350 °C) ferroelectric Hf 0.5 Zr 0.5 O 2 fabricated using anhydrous H 2 O 2 as the ALD oxidant

Here, in this Letter, the robust ferroelectric properties of low-temperature (350 °C) Hf 0.5 Zr 0.5 O 2 (HZO) films are investigated. We demonstrate that the lower crystallization temperature of HZO films originates from a densified film deposition with an anhydrous H 2 O 2 oxidant in the atomic layer deposition process. As a consequence of this densification, H 2 O 2 -based HZO films showed completely crystallinity with fewer defects at a lower annealing temperature of 350 °C. This reduction in the crystallization temperature additionally suppresses the oxidation of TiN electrodes, thereby improving device reliability. The low-temperature crystallization process produces an H 2 O 2 -based HZO capacitor with a high remanent polarization ( P r ), reduced leakage current, high breakdown voltage, and better endurance. Furthermore, while an O 3 -based HZO capacitor requires wake-up cycling to achieve stable P r , the H 2 O 2 -based HZO capacitor demonstrates a significantly reduced wake-up nature. Anhydrous H 2 O 2 oxidant enables the fabrication of a more reliable ferroelectric HZO device using a low process thermal budget (350 °C).

36 MATERIALS SCIENCE↗
DOE OSTI2024

Photoinduced patterning of oxygen vacancies to promote the ferroelectric phase of Hf 0.5 Zr 0.5 O 2

Photoinduced reductions in the oxygen vacancy concentration were leveraged to increase the ferroelectric phase fraction of Hf 0.5 Zr 0.5 O 2 thinfilms. Modest ( ~ 2 — 77 pJ=cm 2 ) laser doses of visible light (488 nm, 2.54 eV) spatially patterned the concentration of oxygen vacancies as monitored by photoluminescence imaging. Local, tip-based, near-field, nanoFTIR measurements showed that the photoinduced oxygen vacancy concentration reduction promoted formation of the ferroelectric phase (space group Pca2 1 ), resulting in an increase in the piezoelectric response measured by piezoresponse force microscopy. Photoinduced vacancy tailoring provides, therefore, a spatially prescriptive, postsynthesis, and low-entry method to modify phase in HfO 2 -based materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Modifications in the charge trap landscape in Hf 0.5 Zr 0.5 O 2 as a function of oxygen vacancy concentration observed with photoemission electron microscopy

Oxygen vacancies in Hf x Zr (1-x) O 2 (HZO) both contribute to stabilization of the ferroelectric orthorhombic phase and promote leakage pathways that limit the endurance of devices based on the material. Here, for this reason, the defect states of oxygen vacancies were investigated using photoemission electron microscopy (PEEM) and photoluminescence spectroscopy (PL), as their concentration was varied via ex situ laser exposure. Following a controlled oxygen vacancy reduction via visible (2.54 eV) laser dosing of HZO, deep-ultraviolet (DUV, 5.82 eV) PEEM was used to spatially probe the resulting mid-gap defect states and work function. Work function was found to increase monotonically with the laser-induced reduction in oxygen vacancy concentration culminating in a total increase near 70 meV. The change implies a Fermi level shift toward the valence band as the total available electron-filled charge states are reduced with the removal of oxygen vacancies. A reduction in charge states is corroborated by the observed lessening of both photoemission and photoluminescence intensities after laser dosing. The deduced position of the Fermi level is within a band of near-conduction band defect states produced by oxygen vacancies that are linked to endurance limiting leakage currents. Together, these results directly identify the primary role of oxygen vacancies on the defect states in HZO while demonstrating that laser exposure can be used for their modification.

42 ENGINEERING↗
DOE OSTI2026

Electrode chemistry impact on retention performance of ferroelectric hafnium zirconium oxide (Hf 0.5 Zr 0.5 O 2−x ) capacitors

Polarization retention of 10 nm thick ferroelectric hafnium zirconium oxide (Hf 0.5 Zr 0.5 O 2−x , HZO) capacitors with W and TaN electrodes is investigated over temperatures ranging from 85 to 150 °C. Same state and opposite state polarization margins for devices with W electrodes show minimal retention loss after 10 5 at 150 °C. The devices capped with TaN electrodes show excellent same state retention, but the opposite state polarization margin in the TaN-electrode devices displays 40% retention loss at 150 °C after 10 5 s. The TaN-capped devices exhibit a more pronounced imprint, which is attributed to an increased oxygen vacancy content (compared to W-capped devices). The increased oxygen vacancy content in the TaN-capped devices is supported by photoluminescence and leakage current measurements. In addition, TaN-capped devices have chemically diffuse electrode–HZO interfaces; more abrupt interfaces are present in the W-capped devices. The presence of interfacial phases in the TaN-capped devices may lead to larger depolarization fields due to reduced charge screening. The results from this study provide further evidence that for HZO ferroelectric devices the electrode can significantly impact polarization retention behavior due to differences in oxygen vacancy concentration and formation of non-ferroelectric interfacial layers.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Searching for ternary magnetic Zr–Fe–B compounds through deep machine learning

We use deep machine learning (ML) combined with first-principles calculations to search for energetically favorable ternary magnetic zirconium–iron borides. We show that an iterative ML approach enables efficient screening of vast structural libraries, effectively selecting promising candidates for subsequent first-principles investigations. Twenty-two new Fe-rich ternary compounds with formation energies within 60 meV atom −1 above the known ternary convex hull and with magnetic polarization larger than 0.6 T are identified, among which ten structures exhibit significant uniaxial anisotropy with magnetocrystalline anisotropy constant K 1 ⩾ 0.8 MJ m −3 , including a Zr 2 Fe 14 B phase. Such an ML-guided approach dramatically accelerates the discovery of rare-earth-free permanent magnetic materials.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Indirect measurement of the 90 Sr ⁢(𝑛, 𝛾)⁢ 91 Sr reaction cross section and the implications for astrophysical Zr production

Here, the intermediate neutron-capture process (𝑖 process) has gained notable traction within the past decade as a way to describe stellar abundance observations which cannot be explained by the slow and rapid neutron-capture processes. Despite the general success of 𝑖-process models, many open questions remain. Among the observations, Zr stands out, as its elemental abundance is difficult to replicate with available 𝑖-process models, while the reactions that affect its production through the 𝑖 process are close enough to stability to study experimentally. Here, we present the experimental constraint of the nuclear level density and 𝛾-strength function (𝛾 SF) of 91 Sr using the 𝛽-Oslo method, which were then input into the TALYS Hauser-Feshbach code to produce the first experimental constraint of the 90 Sr ⁢(𝑛, 𝛾)⁢ 91 Sr capture reaction. This constraint was used alongside that of 92 Sr ⁢(𝑛, 𝛾)⁢ 93 Sr for a reduction in the uncertainty of [Y/Zr] production in the 𝑖-process relevant environmental neutron density of 10 13.5 and 10 14.5 neutrons/cm 3 .

Physics - Nuclear physics and radiation physics↗
DOE OSTI2026

Indirect tunneling enabled spontaneous time-reversal symmetry breaking and Josephson diode effect in TiN/Al 2 ⁢O 3 /Hf 0.8 ⁢Zr 0.2 ⁢O 2 /Nb tunnel junctions

Josephson diode (JD) effect in Josephson tunnel junctions (JTJs) has attracted a great deal of attention due to its importance for developing superconducting-circuitry-based quantum technologies. Even though the preparation of high-quality JTJs by techniques employed in the semiconductor industry has been demonstrated, which was an important milestone because JTJs are the building blocks of superconducting electronics even before the quantum era, the JD effect has not been accomplished in them, nor has the highly desirable electrical control of the effect. We report here the fabrication of JTJs featuring a composite tunnel barrier of Al 2 ⁢O 3 and Hf 0.8 ⁢Zr 0.2 ⁢O 2 using complementary-metal-oxide-semiconductor compatible atomic layer deposition. These JTJs were found to show the JD effect in nominally zero magnetic fields with nonreciprocity controllable via an electric training current, yielding a surprisingly large diode efficiency. The quasiparticle tunneling, through which the Josephson coupling in a JTJ is established, was found to show theoretically expected gap features but no nonreciprocity. We attribute these observations to the simultaneous presence of positive and negative local Josephson couplings in the JTJs, with the negative Josephson coupling originating from indirect tunneling, which results in spontaneous time-reversal symmetry breaking. Finally, the double-minima washboard potential for the ensemble-averaged phase difference in the resistively and capacitively shunted junction model is shown to fully account for the experimentally observed JD effect.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Paramagnon heat capacity in (Ti,Zr,Hf)NiFe x NiSn half-Heusler composites

As a measure of the temperature response of the energy of matter, the heat capacity $C_p$ is a fundamental thermodynamic property. Its dependence on magnetic field, especially at low temperatures, yields insight into the electronic, phononic, and magnetic states of condensed matter. Here, we present a set of paramagnetic and ferromagnetic (Ti, Zr, Hf)NiFe x Sn half-Heusler composites that exhibit low-field (<3 T) maxima in $C_p$ and higher-field magnetic quenching of the heat capacity at temperatures below 10 K. Using rigorous statistical analysis, we attribute the effect to the existence of paramagnons within the compounds. To explain the lowest-temperature (<4 K), low-field declines in $C_p$, we derive a magnon model up to fourth order in dispersion. While the combined paramagnon and magnon model matches the data well, the fit parameters are significantly underdetermined. Further, we provide a qualitative explanation of the secondary effect based on superconducting phases within the composites. Overall, our work highlights the insight of field-dependent heat capacity studies at fixed temperatures that cannot be as easily gleaned from the temperature-dependent heat capacity at fixed magnetic fields.

36 MATERIALS SCIENCE↗
DOE OSTI2022

First observation of isomeric states in 111 Zr, 113 Nb, and 115 Mo

Isomeric states in the neutron-rich nuclei 111 Zr [T 1/2 =0.10 (7) μs] , 113 Nb [T 1/2 =0.7 (4) μs], 115 Mo [T 1/2 =46 (3) μs] were first identified at the Radioactive Ion Beam Factory (RIBF) of RIKEN by using in-flight fission and fragmentation of a 238 U beam at an energy of 345 MeV/u. Here is a brief report of the γ transitions de-exciting from isomeric states and half-lives measurements, which provides the first spectroscopy in the nuclear region of prolate-to-oblate shape-phase transition around mass A ≈110.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2024

Determination of the spins and parities for the 0$^{+}_{4}$ and 0$^{+}_{5}$ states in 100 Zr

Here, two 0 + states at 1294.5 and 1774.0 keV, together with three 2 + and one 4 + levels, were identified or unambiguously spin-parity assigned for the first time in 100 Zr utilizing γ-ray spectroscopy and γ–γ angular correlation techniques with the Gammasphere spectrometer, following the β – decay of neutron-rich, mass-separated 100,100m Y isotopes. Comparisons with recent Monte Carlo shell-model calculations indicate that these two states are candidates for the bandhead of a sequence in a shape-coexisting spherical minimum predicted to be located around ≈1500 keV. According to the measured relative B(E2) relative transition probabilities, the 0$^+_5$ state exhibits decay properties which more closely align with those predicted for a spherical shape, while the 0$^+_4$ level is suggested to be associated with a weakly deformed shape similar to one related to the 0$^+_2$ state.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2024

Direct cross-section measurement of the weak r -process Sr 88 ( α , n ) Zr 91 reaction in ν -driven winds of core-collapse supernovae

About half of the heavy elements beyond iron are known to be produced by the rapid neutron capture process, known as the r process. However, the astrophysical site producing the r process is still uncertain. Chemical abundances observed in several cosmic sites indicate that different mechanisms should be at play. For instance, the abundances around silver measured in a subset of metal-poor stars indicate the presence of a weak r process. This process may be active in neutrino-driven winds of core collapse supernovae where (α,n) reactions dominate the synthesis of Ζ ≈ 40 elements in the expelled materials. Scarcely measured, the rates of (α,n) reactions are determined from statistical Hauser-Feshbach calculations with α-optical-model potentials, which are still poorly constrained. Further, the uncertainties of the (α,n) reaction rates therefore make a significant contribution to the uncertainties of the abundances determined from stellar modeling. In this work, the 88 Sr (α,n)⁢ 91 Zr reaction which impacts the weak r-process abundances has been probed at astrophysics energy for the first time; directly measuring the total cross sections at astrophysical energies of 8.37–13.09 MeV in the center of mass (3.8–7.5 GK). Two measurements were performed at ATLAS with the electrically segmented ionization chamber MUSIC, in inverse kinematics, while following the active target technique. The cross sections of this α-induced reaction on 88 Sr, located at the shell closure N = 50, have been found to be lower than expected, by a factor of 3, despite recent statistical calculations validated by measurements on neighboring nuclei. This result encourages more experimental investigations of (α,n) reactions, at Ν = 50 and towards the neutron-rich side, to further test the predictive power and reliability of such calculations.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2024

Ab initio computations of strongly deformed nuclei near Zr 80

Nuclei around N ≈ Z ≈ 40 are strongly deformed and exhibit coexistence of shapes. These phenomena have challenged nuclear models. Here, we perform ab initio coupled-cluster computations of low-lying collective states and electromagnetic quadrupole transitions of the even-even nuclei 72 Kr, 76,78 Sr, 78,80 Zr, and 84 Mo starting from chiral nucleon-nucleon and three-nucleon forces. Our calculations reproduce the coexistence of oblate and prolate shapes in these nuclei, yield rotational bands and strong electromagnetic transitions, but are not accurate for some observables and nuclei. Finally, these results highlight the advances and challenges of ab initio computations of heavy deformed nuclei.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2024

Unexpected Observation of Disorder and Multiple Phase-Transition Pathways in Shock-Compressed Zr

The response of materials under dynamic compression involves a complex interplay of various deformation mechanisms aimed at relieving shear stresses, yielding a remarkable diversity in material behavior. Here, in this Letter, we utilize femtosecond x-ray diffraction coupled with nanosecond laser compression to reveal an intricate competition between multiple shear-relieving mechanisms within an elemental metal. Our observations in shocked-compressed single-crystal Zr indicate a disorder-mediated shear relaxation at lower pressures. Above the phase-transition pressure, we observe the increasing contribution of structural phase transition in relieving shear stress. We detect not one but three concurrent pathways during the transition from the hcp to a hex-3 structure. These complex dynamics are partially corroborated through multimillion-atom molecular dynamics simulations employing a machine-learned interatomic potential. Our observation of multiple concurrent pathways and disorder during shock compression underscore the far greater intricacies in the dynamic response of metals than previously assumed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗