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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 397 records · Page 22
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Growth and characterization of van der Waals heterostuctures formed by the topological insulator Bi{sub 2}Se{sub 3} and the trivial insulator SnSe{sub 2}

The formation, structure and electronic properties of SnSe{sub 2}–Bi{sub 2}Se{sub 3} van der Waals heterostructures were studied. Both heterostructures, SnSe{sub 2} on Bi{sub 2}Se{sub 3} and Bi{sub 2}Se{sub 3} on SnSe{sub 2}, were grown epitaxially with high crystallinity and sharp interfaces. Their electron band structures are of trivial and topological insulators, respectively. The Dirac surface states of Bi{sub 2}Se{sub 3} survive under the SnSe{sub 2} overlayer. One triple layer of SnSe{sub 2} was found to be an efficient spacer for separating a Bi{sub 2}Se{sub 3} topological-insulator slab into two and creating the corresponding topological surface states.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Crystallographic features related to a van der Waals coupling in the layered chalcogenide FePS{sub 3}

We investigated the crystallographic structure of FePS{sub 3} with a layered structure using transmission electron microscopy and powder X-ray diffraction. We found that FePS{sub 3} forms a rotational twin structure with the common axis along the c*-axis. The high-resolution transmission electron microscopy images revealed that the twin boundaries were positioned at the van der Waals gaps between the layers. The narrow bands of dark contrast were observed in the bright-field transmission electron microscopy images below the antiferromagnetic transition temperature, T{sub N} ≈ 120 K. Low-temperature X-ray diffraction showed a lattice distortion; the a- and b-axes shortened and lengthened, respectively, as the temperature decreased below T{sub N.} We propose that the narrow bands of dark contrast observed in the bright-field transmission electron microscopy images are caused by the directional lattice distortion with respect to each micro-twin variant in the antiferromagnetic phase.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Origin of the size-dependence of the equilibrium van der Waals binding between nanostructures

Nanostructures can be bound together at equilibrium by the van der Waals (vdW) effect, a small but ubiquitous many-body attraction that presents challenges to density functional theory. How does the binding energy depend upon the size or number of atoms in one of a pair of identical nanostructures? To answer this question, we treat each nanostructure properly as a whole object, not as a collection of atoms. Our calculations start from an accurate static dipole polarizability for each considered nanostructure, and an accurate equilibrium center-to-center distance for the pair (the latter from experiment, or from the vdW-DF-cx functional). We consider the competition in each term $-C_{2k}/d^{2k}$ ($k=3, 4, 5$) of the long-range vdW series for the interaction energy, between the size dependence of the vdW coefficient $C_{2k}$ and that of the $2k$-th power of the center-to-center distance $d$. The damping of these vdW terms can be negligible, but in any case it does not affect the size dependence for a given term in the absence of non-vdW binding. To our surprise, the vdW energy can be size-independent for quasi-spherical nanoclusters bound to one another by vdW interaction, even with strong nonadditivity of the vdW coefficient, as demonstrated for fullerenes. We also show that, for low-dimensional systems, the vdW interaction yields the strongest size-dependence, in stark contrast to that of fullerenes. We illustrate this with parallel planar polycyclic aromatic hydrocarbons. Other cases are between, as shown by sodium clusters.

99 GENERAL AND MISCELLANEOUS↗
DOE OSTI2023

Ultrafast laser-induced spin–lattice dynamics in the van der Waals antiferromagnet CoPS 3

CoPS 3 stands out in the family of the van der Waals antiferromagnets XPS 3 (X = Mn, Ni, Fe, and Co) due to the unquenched orbital momentum of the magnetic Co 2+ ions, which is known to facilitate the coupling of spins to both electromagnetic waves and lattice vibrations. Here, using a time-resolved magneto-optical pump–probe technique, we experimentally study the ultrafast laser-induced dynamics of mutually correlated spins and lattice. It is shown that a femtosecond laser pulse acts as an ultrafast heater and, thus, results in the melting of the antiferromagnetic order. At the same time, the resonant pumping of the 4 T 1g → 4 T 2g electronic transition in Co 2+ ions effectively changes their orbital momentum, giving rise to a mechanical force that moves the ions in the direction parallel to the orientation of their spins, thus generating a coherent B g phonon mode at the frequency of about 4.7 THz.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Infrared laser-induced isotope-selective dissociation of mixed (CF{sub 3}Br){sub m}Ar{sub n} van der Waals clusters

The paper presents the results of studies of IR laser-induced bromine-isotope-selective dissociation of small mixed (CF{sub 3}Br){sub m}Ar{sub n} van der Waals clusters (m = 1, 2 and 1 ≤ n ≤ 5 is the number of molecules and atoms in the clusters, respectively). The experiments used a pulsed CO{sub 2} laser to excite clusters and a quadrupole mass spectrometer to detect a molecular cluster beam. The research method is based on the selective vibrational excitation of clusters by IR laser radiation, leading to their predissociation. The possibilities of implementing bromine-isotope-selective dissociation of clusters are considered. The experimental setup and research method are briefly described. The results of determining the cluster dissociation efficiency and selectivity as functions of the energy and frequency of laser radiation are presented. It is shown that resonant vibrational excitation of clusters makes it possible to induce their isotope-selective dissociation. Thus, using a CF{sub 3}Br/Ar mixture with a pressure ratio of 1/200, the enrichment factors of the {sup 79}Br isotope are found to be K{sub enr}({sup 79}Br) = 1.15 ± 0.04 and 0.95 ± 0.03 under cluster irradiation conditions on the 9R(30) (ν = 1084.635 cm{sup −1}) and 9R(24) (ν = 1081.087 cm{sup −1}) lines, respectively The achieved dissociation selectivities for the clusters are, respectively, 1.16 ± 0.05 and 0.95 ± 0.04. The results obtained suggest that this method can be used to separate isotopes in molecules containing isotopes of heavy elements, which have a slight isotopic shift in the IR absorption spectra. (laser isotope separation)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Oscillatory redox behavior in oxides: Cyclic surface reconstruction and reactivity modulation via the Mars–van Krevelen mechanism

The breaking of translational symmetry at oxide surfaces gives rise to coordinatively unsaturated cations/anions and surface restructuring—key factors that govern surface reactivity. Using direct in situ environmental transmission electron microscopy (TEM) observations along with atomistic modeling, we report oscillatory redox behavior in CuO under H 2 , where cyclic surface reconstruction and reactivity modulation occur via the Mars–van Krevelen (MvK) mechanism. We observe self-switching between oxygen-rich and oxygen-deficient surface reconstructions, alternately activating and deactivating the surface for H 2 O formation. During periods of chemical inactivity, the oxygen-deficient surface undergoes slow reoxidation via lattice oxygen diffusing from subsurface and bulk reservoirs, restoring the active oxygen-rich surface termination. The inherent disparity in chemical activity among undercoordinated surface ions, along with sluggish subsurface-to-surface oxygen replenishment, drives this oscillatory redox cycle, modulating H2-induced loss of lattice oxygen at the surface and its delayed replenishment from the subsurface. This creates spatiotemporally separated redox steps at the oxide surface. The phenomena and atomistic insights presented here have significant implications for manipulating the surface reactivity of oxides by tuning the separation of these redox steps.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Low cost switching circuit for van der Pauw resistivity and Hall measurements at various temperatures

The electrical characterization of materials, particularly superconductors, semiconductors, and those undergoing metal-insulator transitions (MITs), relies significantly on resistivity and Hall measurements as a function of temperature. The van der Pauw four-point probe method is commonly used for such measurements, which involves resistance measurements for different circuit configurations connected to sample contacts. However, repeating these measurements at different temperatures is challenging and time consuming. Here, this study introduces a novel approach utilizing a switching circuit controlled by an Arduino device and a LabVIEW program to automate resistance measurements for different electrical configurations. The effectiveness of this setup was demonstrated by testing V 2 O 3 thin film samples deposited on Al 2 O 3 (001) substrates using DC magnetron sputtering. The MIT temperature of the sample was 115 K during heating and 100 K during cooling. The sample exhibited p-type charge carriers with a Hall coefficient of 1.3 ± 0.1 x 10 -4 cm 3 /C and Hall mobility of 1.7 x 10 -1 cm 2 /V∙s, which is consistent with findings from other studies employing commercial equipment.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Optical fingerprints of the electronic band reconstruction in van der Waals magnetic materials

We report a broadband study of the charge dynamics in the van der Waals magnetic materials 2H-M x TaS 2 (M = Mn and Co), which span the onset of both long-range antiferromagnetic (AFM) and ferromagnetic (FM) order, depending on the intercalation M and its concentration x. We discover a spectral weight (SW) shift from high to low energy scales for FM compositions, while reversely SW is removed from low towards high spectral energies for AFM compounds. This maps the related reconstruction of the electronic band structure along the crossover from the FM to AFM order, which restores an occupation balance in the density of states between spin majority and minority bands of the intercalated 3d elements.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Strongly adhesive dry transfer technique for van der Waals heterostructure

That one can stack van der Waals materials with atomically sharp interfaces has provided a new material platform of constructing heterostructures. The technical challenge of mechanical stacking is picking up the exfoliated atomically thin materials after mechanical exfoliation without chemical and mechanical degradation. Chemically inert hexagonal boron nitride (hBN) has been widely used for encapsulating and picking up vdW materials. However, due to the relatively weak adhesion of hBN, assembling vdW heterostructures based on hBN has been limited. Here, we report a new dry transfer technique. We used two vdW semiconductors (ZnPS 3 and CrPS 4 ) to pick up and encapsulate layers for vdW heterostructures, which otherwise are known to be hard to fabricate. By combining with optimized polycaprolactone (PCL) providing strong adhesion, we demonstrated various vertical heterostructure devices, including quasi-2D superconducting NbSe 2 Josephson junctions with atomically clean interface. The versatility of the PCL-based vdW stacking method provides a new route for assembling complex 2D vdW materials without interfacial degradation.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Magnetism and spin dynamics in room-temperature van der Waals magnet Fe 5 GeTe 2

Two-dimensional van der Waals (vdWs) materials have gathered a lot of attention recently. However, the majority of these materials have Curie temperatures that are well below room temperature, making it challenging to incorporate them into device applications. In this work, we synthesized a room-temperature vdW magnetic crystal Fe 5 GeTe 2 with a Curie temperature T c = 332 K, and studied its magnetic properties by vibrating sample magnetometry (VSM) and broadband ferromagnetic resonance (FMR) spectroscopy. The experiments were performed with external magnetic fields applied along the c -axis (H∥ c ) and the ab -plane (H∥ ab ), with temperatures ranging from 300 to 10 K. We have found a sizable Landé g -factor difference between the H∥ c and H∥ ab cases. In both cases, the Landé g -factor values deviated from g = 2. This indicates contribution of orbital angular momentum to the magnetic moment. The FMR measurements reveal that Fe 5 GeTe 2 has a damping constant comparable to Permalloy. With reducing temperature, the linewidth was broadened. Together with the VSM data, our measurements indicate that Fe 5 GeTe 2 transitions from ferromagnetic to ferrimagnetic at lower temperatures. Our experiments highlight key information regarding the magnetic state and spin scattering processes in Fe 5 GeTe 2 , which promote the understanding of magnetism in Fe 5 GeTe 2 , leading to implementations of Fe 5 GeTe 2 based room-temperature spintronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Scanning probe spectroscopy of sulfur vacancies and MoS 2 monolayers in side-contacted van der Waals heterostructures

We investigate the interplay between vertical tunneling and lateral transport phenomena in electrically contacted van der Waals heterostructures made from monolayer MoS 2 , hBN, and graphene. We compare data taken by low-temperature scanning tunneling spectroscopy to results from room-temperature conductive atomic force spectroscopy on monolayer MoS 2 with sulfur vacancies and with varying hBN layers. We show that for thick hBN barrier layers, where tunneling currents into the conductive substrate are suppressed, a side-contact still enables addressing the defect states in the scanning tunneling microscopy via the lateral current flow. Few-layer hBN realizes an intermediate regime in which the competition between vertical tunneling and lateral transport needs to be considered. The latter is relevant for device structures with both a thin tunneling barrier and a side-contact to the semiconducting layers.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Few-mode and anisotropic quantum transport in InSb nanoribbons using an all-van der Waals material-based gate

High-quality electrostatic gating is a fundamental ingredient for successful semiconducting device physics, and a key element of realizing clean quantum transport. Inspired by the widespread improvement of transport quality when two-dimensional van der Waals (vdW) materials are gated exclusively by other vdW materials, we have developed a method for gating non-vdW materials with an all-vdW gate stack, consisting of a hexagonal boron nitride dielectric layer and a few-layer graphite gate electrode. We demonstrate this gating approach on MOVPE-grown InSb nanoribbons (NRs), a novel variant of the InSb nanowire, with a flattened cross-section. In our all-vdW gated NR devices we observe conductance features that are reproducible and have low- to near-zero gate hysteresis. We also report quantized conductance, which persists to lower magnetic fields and longer channel lengths than typical InSb nanowire devices reported to date. Additionally, we observe level splitting that is highly anisotropic in an applied magnetic field, which we attribute to the ribbon cross-section. The performance of our devices is consistent with the reduced disorder expected from the all-vdW gating scheme, and marks the first report of ballistic, few-modes quantum transport in a non-vdW material with an all-vdW gate. Our results establish all-vdW gating as a promising approach for high-quality gating of non-vdW materials for quantum transport, which is in principle applicable generically, beyond InSb systems. In addition, the work showcases the specific potential of all-vdW gate/InSb NR devices for enabling clean quantum devices that may be relevant for spintronics and topological superconductivity studies.

InSb↗
DOE OSTI2023

Tunable quantum anomalous Hall effects in ferromagnetic van der Waals heterostructures

ABSTRACT The quantum anomalous Hall effect (QAHE) has unique advantages in topotronic applications, but it is still challenging to realize the QAHE with tunable magnetic and topological properties for building functional devices. Through systematic first-principles calculations, we predict that the in-plane magnetization induced QAHE with Chern numbers C = ±1 and the out-of-plane magnetization induced QAHE with high Chern numbers C = ±3 can be realized in a single material candidate, which is composed of van der Waals (vdW) coupled Bi and MnBi2Te4 monolayers. The switching between different phases of QAHE can be controlled in multiple ways, such as applying strain or (weak) magnetic field or twisting the vdW materials. The prediction of an experimentally available material system hosting robust, highly tunable QAHE will stimulate great research interest in the field. Our work opens a new avenue for the realization of tunable QAHE and provides a practical material platform for the development of topological electronics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2011

Finite-size effects and nonadditivity in the van der Waals interaction

We obtain analytically the exact nonretarded dispersive interaction energy between an atom and a perfectly conducting disk. We consider the atom in the symmetry axis of the disk and assume that the atom is predominantly polarizable in the direction of this axis. For this situation we discuss the finite-size effects on the corresponding interaction energy. We follow the recent procedure introduced by Eberlein and Zietal together with the old and powerful Sommerfeld's image method for nontrivial geometries. For the sake of clarity we present a detailed discussion of Sommerfeld's image method. Comparing our results for the atom-disk system with those recently obtained for an atom near a conducting plane with a circular aperture, we discuss the nonadditivity of the van der Waals interactions involving an atom and two complementary surfaces. We show that there is a given ratio z/a between the distance z from the atom to the center of the disk (aperture) and the radius of the disk a (aperture) for which nonadditivity effects vanish. Qualitative arguments suggest that this quite unexpected result will occur not only for a circular hole, but for any other symmetric hole.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2011

Phase diagram of Rydberg atoms with repulsive van der Waals interaction

We report a quantum Monte Carlo calculation of the phase diagram of bosons interacting with a repulsive inverse sixth power pair potential, a model for assemblies of Rydberg atoms in the local van der Waals blockade regime. The model can be parametrized in terms of just two parameters, the reduced density and temperature. Solidification happens to the fcc phase. At zero temperature, the transition density is found with the diffusion Monte Carlo method at density {rho}=3.9 (({Dirac_h}/2{pi}){sup 2}/mC{sub 6}){sup 3/4}, where C{sub 6} is the strength of the interaction. The solidification curve at nonzero temperature is studied with the path-integral Monte Carlo approach and is compared with transitions in corresponding harmonic and classical crystals. Relaxation mechanisms are considered in relation to present experiments.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2020

Alignment of Polarization against an Electric Field in van der Waals Ferroelectrics

Polarization in ferroelectrics can be switched in the direction of an applied electric field by dipole reorientation, enabling numerous applications and fundamental phenomena. In this study, we demonstrate that, in the van der Waals (vdW) layered ferrielectric Cu In P 2 S 6 , a unique mechanism exists where polarization aligns against the direction of the applied electric field, seemingly in violation of the fundamental properties of a dipolar solid. The mechanism is the result of the electric field driving the Cu atoms unidirectionally across the vdW gaps, which is distinctively different from dipole reorientation. The crossing of Cu atoms is the fundamental process of ionic conductivity, yet it is compatible with the existence of polarization. These phenomena are confirmed by nanoscale imaging and spectroscopy of ferroelectric capacitors, coupled with dynamic density-functional-theory simulations. The symbiotic relationship of ferroelectric and ionic phenomena enables alternative approaches to control polarization and necessitates a change in perspective on nucleation, domain-wall dynamics, and other ferroelectric and electromechanical characteristics in material systems where ionic and ferroelectric phenomena manifest.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Itinerant ferromagnetism in van der Waals Fe 5 – x Ge Te 2 crystals above room temperature

Two-dimensional (2D) van der Waals (vdW) magnets have recently attracted increasing attention, as they provide a novel system for exploring 2D magnetism. However, intrinsic ferromagnetism in 2D systems has almost exclusively been observed at low temperatures, limiting their technological relevance. Fe N Ge Te 2 ( N = 3 , 4, and 5) systems are currently becoming the most attractive 2D vdW materials due to their relatively high Curie temperatures and large saturation magnetization. However, the nature of their complex yet intriguing magnetic behaviors is still unclear, in part due to the multiple inequivalent iron sites and iron vacancies. In this study, we show evolution of magnetic ordering transitions in Fe 5 – x Ge Te 2 with high Curie temperature and a strong saturation magnetization using photoemission electron microscopy and transport measurements. At 275 K, the ferromagnet transitions to a ferrimagnet, and below 110 K transitions to a state with glassy clusters. These are evidenced from temperature-dependent magnetic stripe domain evolution and anisotropic magnetoresistance measurements. Our findings show a clear magnetic ground state of Fe 5 – x Ge Te 2 at room temperature which signals that Fe 5 – x Ge Te 2 system is a very promising candidate for spintronic devices and provides a material design pathway to further increase the Curie temperature and saturation moments in vdW ferromagnets.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Three-dimensional ferromagnetism and magnetotransport in van der Waals Mn-intercalated tantalum disufide

Van der Waals (vdW) ferromagnets are an important class of materials for spintronics applications. The recent discovery of atomically vdW magnets CrI 3 and Cr 2 Ge 2 Te 6 has triggered a renaissance in the area of two-dimensional (2D) magnetism. Herein we systematically studied 2H-Mn 0.28 TaS 2 single crystal, a 2D vdW ferromagnet with T c ~ 82.3K, and a large in-plane magnetic anisotropy. Mn K-edge x-ray absorption spectroscopy was measured to provide information on its electronic state and local atomic environment. The detailed magnetic isotherms measured in the vicinity of T c indicates that the spin coupling inside 2H-Mn 0.28 TaS 2 is of a 3D Heisenberg type coupled with the attractive long-range interaction between spins that decay as J(r) ≈ r –4.85 . Both resistivity ρ(T) and thermopower S(T) exhibit anomalies near T c , confirming that the hole-type transport carriers strongly interact with local moments. Furthermore, an unusual angle-dependent magnetoresistance is further observed, suggesting a possible field-induced novel magnetic structure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗