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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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A prototype of a two-channel capacitive ignition system for ground-based gas-turbine engines is developed. This system is based on a single-stage flyback transistor converter with a field-effect transistor controlled by an integrated timer. The timer operates in square-wave generator mode, with additional low-voltage voltage stabilization.
Indium foil, used as an interface material in transistor mountings, greatly reduces the thermal resistance of beryllia washers. This method improves the heat dissipation of power transistors in a vacuum environment.
Two new methods of incorporating field effect transistors into circuit designs have resulted in linear response of this type transistor over a wide range of controlled voltage levels. This increases its usefulness as a voltage-controlled resistor.
Zener diode in parallel with a silicon transistor supplies the starting current for a transistor-regulated power supply.
Segmentation of transistor bonding stripes and the inherent inductance of individual leads provides ballast for even current distribution across the junction of a high-frequency transistor.
Boron nitride ceramic heat sink cools transistors in r-f transmitter and receiver circuits. Heat dissipated by the transistor is conducted by the boron nitride housing to the metal chassis on which it is mounted.
Molded insulating spacer with one or more cavities is used as an insulated holder for mounting metal-case transistors in a chassis containing densely packed electronic components. The transistors are mechanically supported on their bases and electrically isolated from each other by the holder.
In tinning transistor leads, an aluminum jig is used to dip the leads into the molten tin. The jigs mass shunts excess heat given off by the molten tin before it reaches and damages the transistor body.
Unusual transistor connection that substitutes for a silicon diode and allows significantly higher repetition rates without increasing power loss rectifies an alternating current. Operation speed is improved by a factor of 10 or more when a given diode is replaced by this transistor circuit.
Circuit increases the range of a logarithmic current amplifier by combining a commercially available amplifier with a silicon epitaxial transistor. A temperature compensating network is provided for the transistor.
Unity gain buffer amplifier with a Field Effect Transistor /FET/ differential input stage responds much faster than bipolar transistors when operated at low current levels. The circuit uses a dual FET in a unity gain buffer amplifier having extremely high input impedance, low bias current requirements, and wide bandwidth.
Slide rule enables the ready conversion of transistor h parameters from one form to another and reduces calculation time by a factor of 5 to 10. The scales are selected to cover all ranges of each parameter that will normally exist for any transistor, and answers are given in the correct order of magnitude, making powers-of-ten calculations unnecessary.
Quantative relationships between radiation dosage to transistors and resultant damage are established. Calculation of these dose levels is based on high energy particle population data and analysis of the shielding effect provided by the enclosures surrounding a given transistor.
Base-triggered avalanche transistor circuit used in a Marx bank pulser configuration provides voltage multiplication with nanosecond rise-time. The avalanche-mode transistors replace conventional spark gaps in the Marx bank. The delay time from an input signal to the output signal to the output is typically 6 nanoseconds.
Extrapolation tables for the control of silicon transistor product reliability have been compiled. The tables are based on a version of the Arrhenius statistical relation and are intended to be used for low- and medium-power silicon transistors.
Modification of process for fabricating transistors, which comprises a metallization-pattern design for emitter and base areas together with a double bonding configuration for each emitter and base-bonding lead, improves uniformity of carrier injection in transistors and of reducing lead inductances at base-emitter terminals.
Bipolar n-p-n transistors fabrication to increase driving capabilities of complementary MOS transistors while retaining low power dissipation
GaAs-Ge heterojunction transistors with microwave planar geometry, calculating performance for comparison with Ge homojunction transistor