NINEs at Sandia National Labs: Tin qubits and nuclear spin dynamics in silicon QD devices
Presentation at LPS Quantum Computing Program Review (QCPR)
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Presentation at LPS Quantum Computing Program Review (QCPR)
Focused Ion Beam (FIB) systems are increasingly utilized in nanotechnology for nanostructuring, surface modification, doping, and rapid prototyping. Recently, their potential for quantum applications has been explored, leveraging FIB’s direct-write capabilities for in situ single ion implantation, which is crucial for fabricating single photon emitters. Color centers in diamond can function as qubits and are of particular interest due to their capacity to store and transmit quantum information. While Group-IV color centers exhibit high brightness, they require low temperatures to retain coherence. However, lead-vacancy in diamond (PbV) operates at the higher end (4 K) of this temperature spectrum due to larger ground-state splitting, making them particularly interesting. In this context, our study presents results for lead (Pb)-containing alloys with eutectic points below 600 °C and results on using tantalum (Ta) and titanium (Ti) as emitter materials for a Pb liquid metal alloy ion source. We show that a standard FIB system is able to resolve the different Pb isotopes and achieve nanoscale spot sizes, as required for quantum information science applications.
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Superconductivity of metallic indium antimonide and telluride compounds
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Sn and tetraethylammonium ions effects on Zn electrodeposition on Zn single crystals in aqueous KOH, using scanning electron microscopy
Auger emission spectroscopy, low energy electron diffraction, sputtering studies, and adhesion and friction experiments on single crystals of Cu-Sn, Cu-Al, and Fe-Al alloys
Sn additives effect on In thin film superconducting transmission lines, comparing with Pippard nonlocal theory for mean free path reduction
Surface segregation, adhesion and friction of monocrystalline Cu-Al, Cu-Sn and Fe-Al alloys from Auger emission spectroscopy and low energy electron diffraction experiments
Copper film is vapor-deposited on clean ribbon and sprayed with photosensitive etch-resistant material. Photographic film masks are placed on ribbon and exposed to ultraviolet light. Etchant removes copper and exposure to oxidizing atmosphere forms niobium oxide. Photosensitive material is removed and ribbon is immersed in molten temperatures.
Irradiated and unirradiated tensile and fatigue specimens of AISI 310 stainless steel and Ti-5Al-2.5Sn were tested in the range of 100 to 10,000 cycles to failure to determine the applicability of the method of universal slopes to irradiated materials. Tensile data for both materials showed a decrease in ductility and increase in ultimate tensile strength due to irradiation. Irradiation caused a maximum change in fatigue life of only 15 to 20 percent for both materials. The method of universal slopes predicted all the fatigue data for the 310 SS (irradiated as well as unirradiated) within a life factor of 2. For the titanium alloy, 95 percent of the data was predicted within a life factor of 3.
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In the method proposed for fabricating multifilamentary Nb3Sn tape, filamentary superconducting paths are produced in standard commercial superconductor tape by chemical milling of separator slots through the Nb3Sn layer. The multifilament configuration features a matrix of ten 1.2 mm wide parallel helical superconducting paths along the length of the tape. The paths are spaced 0.4 mm apart. Tapes tested as small pancake coils demonstrated the integrity and continuity of the matrix, and showed that critical current was sustained in direct proportion to retained superconductor.
Argon adsorption measurements are presented over a wide range of temperature and coverage on a series of three progressively sintered SnO2 surfaces. These data are analyzed by mercury porosimetry, the BET method, the CAEDMON distribution analysis, and the Singleton-Halsey equation. Isosteric heats are computed, and the high-temperature virial expansion of the data presented. The advantages and disadvantages of each method are discussed with particular attention to the ability of physical adsorption to discriminate among surfaces beyond the measurement of surface area.
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This paper summarizes the results of a series of studies dealing with crystal growth from the melt and in particular, the growth of the narrow bandgap semiconductor PbSnTe by the Bridgman technique. Theoretical calculations have shown that for low Prandtl number fluids such as semiconductors, convection has no effect on the temperature field in the melt but has a significant effect on the compositional field. They also show that convective flow will exist in a Bridgman growth system on earth, even in the 'thermally stable' configuration. Measurements of the specific heat have been made up to temperatures of 722 C. The thermal diffusivity has been measured up to 1010 C which includes values for the melt. The interdiffusion coefficients for PbTe and SnTe in the melt have been determined. A technique has been developed and tested which provides a vacuum tight quartz ampoule with electrical feedthroughs for interface demarcation studies during the Bridgman growth. Analysis of crystals grown has indicated that the PbSnTe system is solutally unstable and the distribution of SnTe in the crystal, after an anomalous first to freeze region, follows that predicted by Pfann for convection controlled growth. Studies of the amount of supercooling in PbSnTe indicate that this may explain an anomalous composition distribution in the first to freeze region of an unseeded growth.