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At least 397 records · Page 22

Improving the Visible and Infrared Contrast Ratio of Microshutter Arrays

Three device improvements have been developed that dramatically enhance the contrast ratio of microshutters. The goal of a microshutter is to allow as much light through as possible when the shutters are in the open configuration, and preventing any light from passing through when they are in the closed position. The ratio of the transmitted light that is blocked is defined here as the contrast ratio. Three major components contribute to the improved performance of these microshutters: 1. The precise implementation of light shields, which protect the gap around the shutters so no light can leak through. It has been ascertained that without the light shield there would be a gap on the order of 1 percent of the shutter area, limiting the contrast to a maximum of 100. 2. The precise coating of the interior wall of each microshutter was improved with an insulator and metal using an angle deposition technique. The coating prevents any infrared light that finds an entrance on the surface of the microshutter cell from being emitted from a sidewall. Since silicon is in effect transparent to any light with a wavelength longer than .1 micrometer, these coatings are essential to blocking any stray signals when the shutters are closed. 3. A thin film of molybdenum nitride (MoN) was integrated onto the surface of the microshutter blade. This film provides the majority of light blockage over the microshutter and also ensures that the shutter can be operated over a wide temperature range by maintaining its flatness. These improvements were motivated by the requirements dictated by the James Webb Space Telescope NIRSpec instrument. The science goals of the NIRSpec require observing some of the very faintest objects in a given field of view that also may contain some very bright objects. To observe the faint objects, the light from the bright objects - which could be thousands of times brighter - must be completely blocked. If a closed microshutter is even slightly transmissive, a very bright object will still transmit a small signal, which can be larger than a signal from a very faint object transmitted through an open shutter. Since this situation can completely corrupt the results, it was necessary that the closed shutters be able to attenuate light by at least a factor of 2,000. There currently exist four flight-quality microshutter arrays that have been fully or are currently undergoing testing and the results support that the three improvements described above have successfully led to contrast levels greater than 50,000 in over 99 percent of the microshutters at an operating temperature of 35 K. Applications for these high-contrast microshutters are in the photomask generation and stepper equipment used to make integrated circuits and microelectromechanical (MEMS) devices. Since microshutters are a reconfigurable optical element, their versatility in these industries provides an improvement over printed masks and fixed projection alignment systems.

Jhabvala, Murzy↗

Hall Effect Thruster Plume Contamination and Erosion Study

The objective of the Hall effect thruster plume contamination and erosion study was to evaluate the impact of a xenon ion plume on various samples placed in the vicinity of a Hall effect thruster for a continuous 100 hour exposure. NASA Glenn Research Center was responsible for the pre- and post-test evaluation of three sample types placed around the thruster: solar cell cover glass, RTV silicone, and Kapton(R). Mass and profilometer), were used to identify the degree of deposition and/or erosion on the solar cell cover glass, RTV silicone, and Kapton@ samples. Transmittance, reflectance, solar absorptance, and room temperature emittance were used to identify the degree of performance degradation of the solar cell cover glass samples alone. Auger spectroscopy was used to identify the chemical constituents found on the surface of the exposed solar cell cover glass samples. Chemical analysis indicated some boron nitride contamination on the samples, from boron nitride insulators used in the body of the thruster. However, erosion outweighted contamination. All samples exhibited some degree of erosion. with the most erosion occurring near the centerline of the plume and the least occurring at the +/- 90 deg positions. For the solar cell cover glass samples, erosion progressed through the antireflective coating and into the microsheet glass itself. Erosion occurred in the solar cell cover glass, RTV silicone and Kapton(R) at different rates. All optical properties changed with the degree of erosion, with solar absorptance and room temperature emittance increasing with erosion. The transmittance of some samples decreased while the reflectance of some samples increased and others decreased. All results are consistent with an energetic plume of xenon ions serving as a source for erosion.

Jaworske, Donald A.↗

Apparatus for use in the production of ribbon-shaped crystals from a silicon melt

A susceptor for facilitating induction heating of silicon melt is described. The susceptor comprises a pair of susceptor halves of a thickness less than two skin depths, each being the mirror image of the other, disposed in mutually opposed, electrically insulated relation. The crucible comprises a quartz body supported by the graphite susceptor, whereby the R-F coil is electrically coupled with the melt.

Berkman, S.↗

Strength and flexibility properties of advanced ceramic fabrics

The mechanical properties of four advanced ceramic fabrics are measured at a temperature range of 23 C to 1200 C. The fabrics evaluated are silica, high-and low-boria content aluminoborosilicate, and silicon carbide. Properties studied include fabric break strengths from room temperature to 1200 C, and bending durability after temperature conditioning at 1200 C and 1400 C. The interaction of the fabric and ceramic insulation is also studied for shrinkage, appearance, bend resistance, and fabric-to-insulation bonding. Based on these tests, the low-boria content aluminoborosilicate fabric retains more strength and fabric durability than the other fabrics studied at high temperature.

Sawko, P. M.↗

High-efficiency device research

Progress on research in high-efficiency silicon solar cells is presented. Topics addressed include: recombination measurement techniques, doped crystals, minority carrier transport, oxygen process in solar cells, solar cell models, loss mechanics in solar cells, high-efficiency metal insulators, dendritic web cells, and surface and bulk loss reduction by low-energy hydrogen doping.

Burger, D. R.↗

Ultrathin VO 2 Films on Functional Substrates

The metal–insulator transition (MIT) in vanadium dioxide (VO 2 ) thin films is strongly affected by grain size, thickness, and interfacial properties. Typically, a minimum thickness around 50 nm is required for VO 2 to exhibit a significant MIT when functional substrates like sapphire and silicon are used. Several works have shown that thin films below 20 nm, with up to 2–3 decades of change in the resistance across the MIT, can be achieved but require complex pre- or postprocessing of the samples. We show that predeposition substrate condition control facilitates the direct growth of VO 2 ultrathin 15 nm films, exhibiting a resistance change between 3 and 4 decades across the MIT. Our findings indicate that the interface between the film and the substrate is crucial in determining the initial growth layers and the structural evolution. With appropriate substrate surface treatment, the desired VO 2 MIT can be enhanced regardless of the substrate crystallographic orientation. Moreover, we propose a novel approach to obtain large resistance changes across the MIT in ultrathin VO 2 films by incorporating a predeposited 1.5 nm vanadium oxide buffer layer, thereby eliminating the need to use different materials or complex pre- or postprocessing of the samples. Here we also demonstrate that this method improves the transition of 25–50 nm VO 2 thin films on silicon substrates. Our study reveals a simple approach for direct growth of ultrathin VO 2 films exhibiting a significant MIT, which is commonly accepted unattainable over substrates of technological importance, such as sapphire and silicon.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Development of organic non-flammable spacecraft potting, encapsulating and conformal coating compounds

The overall program objective was to develop a flexible compound which not only functioned in a manned aerospace environment as an effective electrical insulation, but whose flammability characteristics in 16.5 psia, 60% oxygen/40% nitrogen were evidenced by rapid self-extinguishment and minimal thermal (pyrolysis) degradation. The following polymeric matrices were examined in depth: fluoroelastomers, modified fluoroelastomers, silicone RTV's, and modified silicone and fluorosilicone RTV's. Almost none of these systems burned in air, but all burned in 6.2 psia oxygen. Inorganic, organic, and inorganic/organic additives were evaluated in conjunction with these polymers in order to achieve the required survival in the 16.5 psia 60/40 environment. Depending upon formulations, it was possible to achieve nonflammable products when tested in the 1/4 in. x 1/4 in. x 1 in. configuration, even up to and including 16.5 psia oxygen. However, in order to assure this level of flame resistance, it was found necessary to heavily load the matrix with the additives. This resulted in a significant reduction in mechanical properties and large increases in viscosities. Optimization of formulations to obtain a suitable balance between these properties and flammability resistance led to the final selection of Formulation 387 as the primary system.

Lieberman, S. L.↗

Opacified silica reusable surface insulation /RSI/ for thermal protection of the Space Shuttle Orbiter

A reusable surface insulation (RSI) material adopted for use on limited areas of the Orbiter's heat shield is described. The RSI is a rigid sintered fibrous silica material containing about 3% by weight of 1200-grit silicon carbide powder. RSI manufacture is described; strength characteristics and thermal conductivity of the final product can be tailored by controlling the isotropy, and the density, coefficient of thermal expansion, and specific heat are reported. Data establishing that opacification of RSI with silicon carbide lowers the thermal conductivity are presented.

Goldstein, H. E.↗

Opacified silica reusable surface insulation /RSI/ for thermal protection of the Space Shuttle Orbiter

The present paper deals with a second-generation reusable surface insulation (RSI) material, termed LI-2200, which has been chosen for use on limited areas of the Orbiter heat shield. It is a rigid sintered fibrous silica containing about 3% by weight 1200 grit silicon carbide powder, capable of surviving multiple reentries at temperatures on the order of 1400 C. The lower thermal conductivity achieved by opacification with silicon carbide is demonstrated by radiant transmission measurements and thermal response tests.

Goldstein, H. E.↗

Enhanced adhesion from high energy ion irradiation

It has been found that the adhesion of thin metal films on insulators, semiconductors, and metals could be improved by subjecting the material to a high-energy ion bombardment. Griffith et al. (1982) have first suggested a use of this technique with insulators. The present investigation has the objective to determine the mechanism for the adhesion enhancement. A description is presented of a preliminary transmission electron microscopy (TEM) study of thinned bonded samples of silver on silicon using electron diffraction. It is found that irradiation of a variety of thin film-substrate combinations by heavy ion beams will provide a remarkable improvement in the adherence of the film. The evidence for the mechanism involved in the enhancement of adhesion is discussed.

Werner, B. T.↗

Thermal management for a Mach 5 cruise aircraft using endothermic fuel

The present thermal management system for a carrier-based Mach 5 cruise-capable aircraft whose propulsion system does not entail cryogenic fuels is predicated on the use of the catalytic endothermic reaction of a petroleum-derived hydrocarbon fuel as the heat sink for engine cooling. The insulation of engine flowpath surfaces reduces cooling requirements. The primary elements of this closed-cycle cooling system are a fuel preheater, a catalytic fuel reactor, and engine wall-cooling panels; a silicone-based liquid polymer is used as the coolant. Structural, weight, and thermal analysis results are presented for each of the primary components.

Petley, Dennis H.↗

Hydrophobic versus Hydrophilic Interfacial Coatings on Silicon Nanoparticles Teach Us How to Design the Solid Electrolyte Interphase in Silicon-Based Li-Ion Battery Anodes

Herein, we evaluate the effect of covalently attached molecular coating hydrophobicity on the surface of the silicon nanoparticle (Si NP) active anode material for Li-ion batteries. The experiments are a means to identify the interfacial properties that help minimize electrochemical side reactions during cycling. Preformed coatings on the Si NP surfaces prior to electrode fabrication mimic the ionically conducting and electronically insulating properties of the solid electrolyte interphase (SEI). Hydrophilic oligomers such as polyethylene oxide (PEO) and other related structures are commonly identified as Li+-conducting components of the SEI. Here, we study the effect of such hydrophilic PEO versus hydrophobic alkyl molecular coatings on Si NP anode electrochemical performance. We also study the effect of the PEO oligomer length and the resulting effective thickness of the interfacial coating on the electrochemical performance. We find that PEO oligomers electrochemically isolate Si NPs when the PEO coating thickness approaches the electron tunneling distance of ~2.5 nm. Surprisingly, the thickness of the PEO-based coatings has a negligible effect on their ability to minimize electrochemical side reactions as measured by Coulombic efficiency. These results reveal how the interfacial coating on silicon anode materials should differ from an operando-formed SEI layer and discuss design strategies for an ideal interfacial active material coating based on these results.

25 ENERGY STORAGE↗

Method of fabricating germanium and gallium arsenide devices

A method of semiconductor diode fabrication is disclosed which relies on the epitaxial growth of a precisely doped thickness layer of gallium arsenide or germanium on a semi-insulating or intrinsic substrate, respectively, of gallium arsenide or germanium by either molecular beam epitaxy (MBE) or by metal-organic chemical vapor deposition (MOCVD). The method involves: depositing a layer of doped or undoped silicon dioxide on a germanium or gallium arsenide wafer or substrate, selectively removing the silicon dioxide layer to define one or more surface regions for a device to be fabricated thereon, growing a matched epitaxial layer of doped germanium or gallium arsenide of an appropriate thickness using MBE or MOCVD techniques on both the silicon dioxide layer and the defined one or more regions; and etching the silicon dioxide and the epitaxial material on top of the silicon dioxide to leave a matched epitaxial layer of germanium or gallium arsenide on the germanium or gallium arsenide substrate, respectively, and upon which a field effect device can thereafter be formed.

Jhabvala, Murzban↗

Silicon Membrane Mirrors with Electrostatic Shape Actuators

Efforts are under way to develop deformable mirrors equipped with microscopic electrostatic actuators that would be used to maintain their reflective surfaces in precise shapes required for their intended applications. Unlike actuators that depend on properties of materials (e.g., piezoelectric and electrostrictive actuators), electrostatic actuators are effective over a wide temperature range. A mirror of the present type would be denoted a MEMSDM (for microelectromechanical system deformable mirror). The reflective surface of such a mirror would be formed on a single-crystal silicon membrane that would be attached by posts to a silicon actuator membrane that would, in turn, be attached by posts to a rigid silicon base (see figure). The actuator membrane would serve as the upper electrode of a capacitor. Multiple lower electrodes, each occupying a conveniently small fraction of the total area, would be formed on an electrically insulating oxide layer on the base, thereby defining a multiplicity of actuator pixels. The actuator membrane would be corrugated in a pattern that would impart mechanical compliance needed for relaxation of operational and fabrication-induced stresses and to minimize the degree of nonlinearity of deformations. The compliance afforded by the corrugations would also help to minimize the undesired coupling of deformations between adjacent pixels (a practical goal being to keep the influence coefficient between adjacent pixels below 10 percent).

Yang, Eui-Hyeok↗

Packaging of an 8-kV Silicon Carbide Diode Module with Double-Side Cooling and Sintered-Silver Joints

Packaging innovations are needed for medium-voltage wide bandgap power semiconductor modules to enable their adaptation in grid applications. A unique challenge for packaging medium-voltage power modules is managing the trade-off between insulation demand and heat dissipation. The focus of this work was on developing a packaging innovation that improves the module heat dissipation and offers more flexibility to its insulation design. Two strategies were explored for the packaging of an 8-kV SiC diode rectifier module:(1) double-side cooling and (2) sintered-silver bonding. Double-side cooling was realized by using short metal posts rather than long and thin wire bonds for device interconnection, forming a low-profile package with devices sandwiched between two insulated metal substrates. Sintered-silver bonding enabled the devices to function reliably at over 250 °C. Simulations of the packaged module showed a low interconnect inductance of 2.67 nH and a 50% less heat transfer coefficient required to cool the chips. Prototypes of the module were fabricated, and preliminary electrical testing results validated the package design.

27 ARPA - Advanced Research Projects Agency-Energy↗

Improved Cure-in-Place Silicone Adhesives

Two improved cure-in-place silicone-elastomer-based adhesives have low thermal expansion and low thermal conductivity. Adhesives are flexible at low temperature and withstand high temperatures without disintegrating. New ablative compounds were initially developed for in-flight repair of insulating tile on Space Shuttle orbiter. Could find use in other applications requiring high-performance adhesives, such as sealants for solar collectors.

Blevins, C. E.↗

Verilog-A Device Models for Cryogenic Temperature Operation of Bulk Silicon CMOS Devices

Verilog-A based cryogenic bulk CMOS (complementary metal oxide semiconductor) compact models are built for state-of-the-art silicon CMOS processes. These models accurately predict device operation at cryogenic temperatures down to 4 K. The models are compatible with commercial circuit simulators. The models extend the standard BSIM4 [Berkeley Short-channel IGFET (insulated-gate field-effect transistor ) Model] type compact models by re-parameterizing existing equations, as well as adding new equations that capture the physics of device operation at cryogenic temperatures. These models will allow circuit designers to create optimized, reliable, and robust circuits operating at cryogenic temperatures.

Akturk, Akin↗

Spatial Atomic Layer Deposition of Aluminum Oxide as a Passivating Hole Contact for Silicon Solar Cells

In this work, tunneling aluminum oxide (Al 2 O 3 ) passivation layers are demonstrated to be a candidate for hole collecting, passivating contacts when coupled with a boron-doped surface. Here, these very thin Al 2 O 3 films (1.5-3 nm) are deposited using spatial atomic layer deposition (ALD) on boron diffused (110-115 Ω –1 ) hydrophilic surfaces operating as metal-insulator-semiconductor (MIS) contacts. Emitter saturation current density values of approximately ≈57 fA cm 2 are achieved for Al 2 O 3 film thicknesses of 2 nm before metallization. At this same thickness, contact resistivity values of 33 mΩ cm 2 are obtained after metallization. Most importantly, the boron diffusion, wet chemical surface preparation, and spatial ALD of Al 2 O 3 used to create these MIS structures were all performed with industrially relevant equipment on Cz wafers.

14 SOLAR ENERGY↗