Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Separation circuit”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 397 records · Page 22
All sourcesNASA NTRSDOE OSTI
NASA NTRS1991

Analysis of Fluctuating Static Pressure Measurements in a Large High Reynolds Number Transonic Cryogenic Wind Tunnel

Dynamic measurements of fluctuating static pressure levels were made using flush mounted high frequency response pressure transducers at eleven locations in the circuit of the National Transonic Facility (NTF) over the complete operating range of this wind tunnel. Measurements were made at test section Mach numbers from 0.2 to 1.2, at pressure from 1 to 8.6 atmospheres and at temperatures from ambient to -250 F, resulting in dynamic flow disturbance measurements at the highest Reynolds numbers available in a transonic ground test facility. Tests were also made independently at variable Mach number, variable Reynolds number, and variable drivepower, each time keeping the other two variables constant thus allowing for the first time, a distinct separation of these three important variables. A description of the NTF emphasizing its flow quality features, details on the calibration of the instrumentation, results of measurements with the test section slots covered, downstream choke, effects of liquid nitrogen injection and gaseous nitrogen venting, comparisons between air and nitrogen, isolation of the effects of Mach number, Reynolds number, and fan drive power, and identification of the sources of significant flow disturbances is included. The results indicate that primary sources of flow disturbance in the NTF may be edge-tones generated by test section sidewall re-entry flaps and the venting of nitrogen gas from the return leg of the tunnel circuit between turns 3 and 4 in the cryogenic mode of operation. The tests to isolate the effects of Mach number, Reynolds number, and drive power indicate that Mach number effects predominate. A comparison with other transonic wind tunnels shows that the NTF has low levels of test section fluctuating static pressure especially in the high subsonic Mach number range from 0.7 to 0.9.

Igoe, William B.↗
DOE OSTI2023

Topological terms with qubit regularization and relativistic quantum circuits

Qubit regularization provides a rich framework to explore quantum field theories. The freedom to choose how the important symmetries of the theory are embedded in the qubit regularization scheme allows us to construct new lattice models with rich phase diagrams. Some of the phases can contain topological terms which lead to critical phases. In this work we introduce and study the SU(3)-F qubit regularization scheme to embed the SO(3) spin-symmetry. We argue that qubit models in this regularization scheme contain several phases including a critical phase which describes the k = 1 Wess-Zumino-Witten (WZW) conformal field theory (CFT) at long distances, and two massive phases one of which is trvially gapped and the other which breaks the lattice translation symmetry. We construct a simple space-time Euclidean lattice model with a single coupling U and study it using the Monte Carlo method. We show the model has a critical phase at small U and a trivially massive phase at large U with a first order transition separating the two. Another feature of our model is that it is symmetric under space-time rotations, which means the temporal and spatial lattice spacing are connected to each other. The unitary time evolution operator obtained by a Wick rotation of the transfer matrix of our model can help us compute the physics of the k = 1 WZW CFT in real time without the need for tuning the temporal lattice spacing to zero. We use this idea to introduce the concept of a relativistic quantum circuit on a discrete space-time lattice.

Bhattacharya, Tanmoy↗
DOE OSTI2024

Time-resolved synchrotron light source X-ray detection with Low-Gain Avalanche Diodes

Low Gain Avalanche Diodes (LGADs) represent the state-of-the-art in timing measurements and will instrument future timing detectors at the High Luminosity Large Hadron Collider (HL-LHC) experiments. While conceived as a sensor for charged particles, the intrinsic gain of LGADs makes it possible to detect low energy X-rays with good energy resolution and excellent timing (tens of picoseconds). Here, using the Stanford Synchrotron Radiation Lightsource (SSRL) at SLAC, several LGADs designs were characterized with energies from 5 to 35 keV. The SSRL provides 10 ps pulsed X-ray bunches separated by 2.1 ns intervals, and with an energy dispersion (ΔE/E) of 1 X 10 -4 . LGADs fabricated by Hamamatsu Photonics (HPK) and Brookhaven National Laboratory (BNL) with different thicknesses ranging from 20 µm to 50 µm and different gain layer designs were read out a two stage fast amplification circuit and digitized with a high bandwidth, high sampling rate oscilloscope. PIN devices from HPK were characterized as well. A systematic and detailed characterization of the devices’ energy linearity, resolution and timing resolution as a function of X-ray energy was performed for different biasing voltages at room temperature

Charge multiplication↗
NASA NTRS1989

Gallium arsenide processing for gate array logic

The development of a reliable and reproducible GaAs process was initiated for applications in gate array logic. Gallium Arsenide is an extremely important material for high speed electronic applications in both digital and analog circuits since its electron mobility is 3 to 5 times that of silicon, this allows for faster switching times for devices fabricated with it. Unfortunately GaAs is an extremely difficult material to process with respect to silicon and since it includes the arsenic component GaAs can be quite dangerous (toxic) especially during some heating steps. The first stage of the research was directed at developing a simple process to produce GaAs MESFETs. The MESFET (MEtal Semiconductor Field Effect Transistor) is the most useful, practical and simple active device which can be fabricated in GaAs. It utilizes an ohmic source and drain contact separated by a Schottky gate. The gate width is typically a few microns. Several process steps were required to produce a good working device including ion implantation, photolithography, thermal annealing, and metal deposition. A process was designed to reduce the total number of steps to a minimum so as to reduce possible errors. The first run produced no good devices. The problem occurred during an aluminum etch step while defining the gate contacts. It was found that the chemical etchant attacked the GaAs causing trenching and subsequent severing of the active gate region from the rest of the device. Thus all devices appeared as open circuits. This problem is being corrected and since it was the last step in the process correction should be successful. The second planned stage involves the circuit assembly of the discrete MESFETs into logic gates for test and analysis. Finally the third stage is to incorporate the designed process with the tested circuit in a layout that would produce the gate array as a GaAs integrated circuit.

Cole, Eric D.↗
DOE OSTI2020

Perovskite Quantum Dot Solar Cells: Mapping Interfacial Energetics for Improving Charge Separation

Colloidal halide perovskite nanocrystals or quantum dots (QDs) show similar defect tolerance as thin film perovskite materials with added nanoscale phenomena. Perovskite QD solar cells have demonstrated efficiencies of 16.6%, greater than that of any other QD material system. While the efficiency lags behind the best thin-film perovskite devices, these solar cells could have advantages over the thin-film versions in terms of processability, phase stability, and high open-circuit voltages. However, some operating principles behind perovskite quantum dot device stacks and the associated electric field properties are still unknown. Here, we characterize the junction structure within perovskite QD solar cells, by exposing functioning cross-sections and using nanometer-scale Kelvin probe force microscopy to offer insight into the selection and performance of charge selective contacts. We also evaluated various solar cell device architectures with different selective contacts to isolate the role of each junction in device performance. We show that in high-performance n-i-p architectures, both electron- and hole-transport layer (HTL) interfaces possess a strong electric field, but in the case of the inverted p-i-n architecture, we find that high interfacial recombination at the HTL/QD junction is responsible for subpar device performance. Perovskite QD and thin film materials can synergistically be combined to offer more design flexibility in PV devices, and here we demonstrate that the interface between perovskite thin films and QDs are relatively benign and amenable for synergistic device design.

14 SOLAR ENERGY↗
NASA NTRS1971

Development of a plan for automating integrated circuit processing

The operations analysis and equipment evaluations pertinent to the design of an automated production facility capable of manufacturing beam-lead CMOS integrated circuits are reported. The overall plan shows approximate cost of major equipment, production rate and performance capability, flexibility, and special maintenance requirements. Direct computer control is compared with supervisory-mode operations. The plan is limited to wafer processing operations from the starting wafer to the finished beam-lead die after separation etching. The work already accomplished in implementing various automation schemes, and the type of equipment which can be found for instant automation are described. The plan is general, so that small shops or large production units can perhaps benefit. Examples of major types of automated processing machines are shown to illustrate the general concepts of automated wafer processing.

Source record↗
NASA NTRS1981

Modular hardware synthesis using an HDL

Although hardware description languages (HDL) are becoming more and more necessary to automated design systems, their application is complicated due to the difficulty in translating the HDL description into an implementable format, nonfamiliarity of hardware designers with high-level language programming, nonuniform design methodologies and the time and costs involved in transfering HDL design software. Digital design language (DDL) suffers from all of the above problems and in addition can only by synthesized on a complete system and not on its subparts, making it unsuitable for synthesis using standard modules or prefabricated chips such as those required in LSI or VLSI circuits. The present paper presents a method by which the DDL translator can be made to generate modular equations that will allow the system to be synthesized as an interconnection of lower-level modules. The method involves the introduction of a new language construct called a Module which provides for the separate translation of all equations bounded by it.

Covington, J. A.↗
NASA NTRS1987

Solar flare perturbations in stratospheric current systems

Electric field, conductivity, and ionization rate data were collected on two balloon payloads at 26 km in the southern hemisphere stratosphere during the solar flare of Feb. 16, 1984. Both polarities of the conductivity were enhanced by a factor of two at a payload with an invariant latitude (Lambda) of -56.3 deg (rigidity = 1.4GV). At the same time no transient effects were seen in any of these parameters by a more equatorially located payload at Lambda = -48.8 deg (rigidity = 2.8 GV). The two payloads were separated by 5 hours of local time. The vertical current density, J(z), at the poleward most payload was enhanced by over a factor of two, while no J(z) variations were seen for the equatorward payload. Interpretation of these observations suggests that a simple RC time constant analysis of the global circuit may be incorrect.

Holzworth, R. H.↗
DOE OSTI2025

Long-range optical coupling with epsilon-near-zero materials

Long-range resonant quantum tunneling of electrons happens across potential barriers when the wavefunction interferes constructively outside the barrier. Here we demonstrate an analogy in optical systems based on epsilon-near-zero materials, achieving phase-modulated, long-range optical interactions between transparent semiconducting oxide layers beyond the evanescent photonic coupling. Distinct from weak thin-film interference, intense electromagnetic fields confined within the epsilon-near-zero thin films show anti-correlated intensity oscillations as a function of interlayer separation up to hundreds of microns. The oscillatory, anti-correlated electromagnetic field intensities were probed by second harmonic generation from wedged indium tin oxide multilayers. Such a system that hosts subwavelength mode footprint and simultaneously long-range radiative coupling offers prospects for long-distance optical communication, large-scale photonic circuits, and hybrid quantum photonic systems.

Wang, Danqing [Fudan University, Shanghai (China);↗
NASA NTRS1977

Design, fabrication, and evaluation of charge-coupled devices with aluminum-anodized-aluminum gates

A 4-phase, 49 1/2 bit CCD shift register was designed and fabricated using two levels of aluminum metallization with anodic Al2O3 insulation separating the layers. Test circuitry was also designed and constructed. A numerical analysis of an MOS-RC transmission line was made and results are given to characterize performance for various conductivities. The electrical design of the CCD included a low-noise dual-gate input and a balanced floating diffusion output circuit. Metallization was accomplished both by low voltage DC sputtering and thermal evaporation. The audization was according to published procedures using a buffered tartaric acid bath. Approximately 20 wafers were processed with 50 complete chips per wafer. All devices failed by shorting between the metal levels at some point. Experimental procedures eliminated temperature effects from sintering and drying, anodic oxide thickness, edge effects, photoresist stripping procedures, and metallization techniques as the primary causes of failure. It was believed from a study of SEM images that protuberances (hillocks) grow up from the first level metal through the oxide either causing a direct short or producing a weak, highly stressed insulation point which fails at low voltage. The cause of these hillocks is unknown; however, they have been observed to grow during temperature excursions to 470 C.

Gassaway, J. D.↗
NASA NTRS1993

Demonstration of Y1Ba2Cu3O(7-delta) and complementary metal-oxide-semiconductor device fabrication on the same sapphire substrate

We report the first fabrication of active semiconductor and high-temperature superconducting devices on the same substrate. Test structures of complementary MOS transistors were fabricated on the same sapphire substrate as test structures of Y1Ba2Cu3O(7-delta) flux-flow transistors, and separately, Y1Ba2Cu3O(7-delta) superconducting quantum interference devices utilizing both biepitaxial and step-edge Josephson junctions. Both semiconductor and superconductor devices were operated at 77 K. The cofabrication of devices using these disparate yet complementary electronic technologies on the same substrate opens the door for the fabrication of true semiconductive/superconductive hybrid integrated circuits capable of exploiting the best features of each of these technologies.

Burns, M. J.↗
NASA NTRS1991

High-Power AlGaAs Quantum-Well Lasers On Si Substrates

AlxGa1-xAs lasers of graded-index-of-refraction, separate-confinement-heterostructure, single-quantum-well type fabricated on silicon substrates by migration-enhanced molecular-beam epitaxy followed by metalorganic vapor-phase epitaxy. They are intermediate products of continuing effort to develop low-threshold-current, high-efficiency lasers for parallel optical interconnections between large-scale optoelectronic integrated circuits.

Kim, Jae-Hoon↗
NASA NTRS1987

Global circuit variability from multiple stratospheric electrical measurements

The vertical component of the electric field, conductivity, and the derived current density from eight superpressure balloons are examined. Special emphasis was placed on the fair-weather, simultaneous measurements from widely spaced constant-altitude (26 km) balloons. The conductivity measurements were well organized by a simple ionization rate parameterization depending on the geomagnetic latitude. The variability of all the electrical parameters was found to be independent of the balloon separation. Much of the time the current density measurements were within 20 percent, for simultaneous flights, even though the balloons were up to 6000 km apart. Also, these simultaneous current density data show that the global current source was significantly variable on hourly and daily time scales. Finally, the use of the simultaneous current density data is discussed as a possible 'geoelectric index'. Advantages and limitations of such an index are discussed.

Norville, Kent↗
NASA NTRS1992

Capacity retention in hydrogen storage alloys

Results of our examination of the properties of several candidate materials for hydrogen storage electrodes and their relation to the decrease in H-storage capacity upon open-circuit storage over time are reported. In some of the alloy samples examined to date, only about 10 percent of the hydrogen capacity was lost upon storage for 20 days, while in others, this number was as high as 30 percent for the same period of time. This loss in capacity is attributed to two separate mechanisms: (1) hydrogen desorbed from the electrode due to pressure differences between the cell and the electrode sample; and (2) chemical and/or electrochemical degradation of the alloy electrode upon exposure to the cell environment. The former process is a direct consequence of the equilibrium dissociation pressure of the hydride alloy phase and the partial pressure of hydrogen in the hydride phase in equilibrium with that in the electrolyte environment, while the latter is related to the stability of the alloy phase in the cell environment. Comparison of the equilibrium gas-phase dissociation pressures of these alloys indicate that reversible loss of hydrogen capacity is higher in alloys with P(eqm) greater than 1 atm than in those with P(eqm) less than 1 atm.

Anani, A.↗
NASA NTRS2004

NASA Tech Briefs, April 2004

Topics covered include: Analysis of SSEM Sensor Data Using BEAM; Hairlike Percutaneous Photochemical Sensors; Video Guidance Sensors Using Remotely Activated Targets; Simulating Remote Sensing Systems; EHW Approach to Temperature Compensation of Electronics; Polymorphic Electronic Circuits; Micro-Tubular Fuel Cells; Whispering-Gallery-Mode Tunable Narrow-Band-Pass Filter; PVM Wrapper; Simulation of Hyperspectral Images; Algorithm for Controlling a Centrifugal Compressor; Hybrid Inflatable Pressure Vessel; Double-Acting, Locking Carabiners; Position Sensor Integral with a Linear Actuator; Improved Electromagnetic Brake; Flow Straightener for a Rotating-Drum Liquid Separator; Sensory-Feedback Exoskeletal Arm Controller; Active Suppression of Instabilities in Engine Combustors; Fabrication of Robust, Flat, Thinned, UV-Imaging CCDs; Chemical Thinning Process for Fabricating UV-Imaging CCDs; Pseudoslit Spectrometer; Waste-Heat-Driven Cooling Using Complex Compound Sorbents; Improved Refractometer for Measuring Temperatures of Drops; Semiconductor Lasers Containing Quantum Wells in Junctions; Phytoplankton-Fluorescence-Lifetime Vertical Profiler; Hexagonal Pixels and Indexing Scheme for Binary Images; Finding Minimum-Power Broadcast Trees for Wireless Networks; and Automation of Design Engineering Processes.

Source record↗
DOE OSTI2020

Pattern generator circuit for high-speed pulse generation

A pattern generator circuit includes a high-speed shift register and a non-overlap generator. The shift register is programmable to produce a pulse train of pulses having a defined pulse duration and a defined pulse-to-pulse interval. The non-overlap generator deserializes the incoming pulse train, and it produces a time-separated reset pulse based on the pulse train. The shift register is configured to permit the pulse durations and pulse-to-pulse interval to be selected arbitrarily over specified ranges in increments of a basic time unit that depends on the oscillator period.

42 ENGINEERING↗
DOE OSTI2020

Investigation on capacity loss mechanisms of lithium-ion pouch cells under mechanical indentation conditions

Capacity loss was observed in Li-ion cells after mechanical deformation approaching the onset of internal short circuit (ISCr). In this paper, a series of indentation tests were carried out on commercial Li-ion cells of three capacities (500, 1500 and 2000 mAh). Both in-situ and ex-situ methods were used to investigate the mechanisms of indentation-induced capacity loss. We note after indentation test, the cell capacity reduced by 0.5%–6% of its original value. The incremental capacity (IC) analysis results showed that IC curves generally shifted to lower voltage region, indicating the increase in cell internal resistance. In addition, the fitting results of electrochemical impedance spectroscopy (EIS) indicated that mechanical indentation can result in a reduction in ohmic resistance and the increase in polarization resistance. Scanning electron microscopy (SEM) and X-ray computed tomography (XCT) results showed crushing of graphite, mud cracking of copper current collectors and enlarged pores in separator, which is proposed to be the main reasons for the increase in polarization resistance and permanent capacity loss. The rapid capacity loss due to mechanical abuse was compared with the long-term capacity fading.

25 ENERGY STORAGE↗
DOE OSTI2020

Dielectric relaxation of neodymium chloride in water and in methanol

In this work, an open-ended coaxial probe was used to study the dielectric relaxation of neodymium chloride (NdCl 3 ) in water and in methanol at room temperature over the frequency range 0.2–40.0 GHz. An equivalent circuit model based on the antenna model was used to obtain the dielectric spectra with the effective removal of spurious effects. This extends the use of the open-ended coaxial probe technique for highly conductive substances. The structural and thermodynamic parameters obtained from the dielectric spectra of aqueous NdCl 3 solutions suggest that solvent-separated ion pairs and solvent-shared ion pairs dominate the low-frequency behavior at low concentrations. In methanol, solvent-shared ion pair relaxation modes were detected. No contact pair relaxation was observed in either solvent. Under all conditions, Nd 3+ was strongly solvated, as reflected by its high effective hydration number. The estimated association constant of NdCl 3 in water at infinite dilution was within the literature values and was lower than that observed in methanol.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗