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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 397 records · Page 22

Controlled semiconductor quantum dot fabrication utilizing focus ion beam

In this project, we experimented the focused ion beam (FIB) based fabrications of semiconductor quantum dots (QDs) by using metal nano particles (NPs) (e.g., Al) on semiconductor as a template and by means of the FIB induced direct metal-to-QD conversion. We have examined effect of the experimental conditions, including Ga + ion energy and dose as well as substrate temperature. The results of experiments have shown AlGaSb QD formation on GaSb substrate can be achieved under certain conditions but there are many challenges about the techniques, including compositional nonuniformity of the QDs formed, partial conversion of the metal NP to QD, and high defect concentration in the QDs.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

High Temperature Thick Film Sensor Development Based on Refractory Oxide Semiconductors

Solid-state, high-temperature sensing devices are required for accurate temperature, strain/stress, and failure monitoring for a range of advanced manufacturing, transportation, and military applications. High temperature conditions limit sensing strategies, where typically traditional metal and semiconductor materials are unstable, and the sensing options are limited to optical spectroscopy methods. In addition, strategies to embed the sensors directly within active components and protective thermal refractory are of interest that permit near-environment sensing which is not possible with the traditional electronic materials and components. Rare-earth chromite semiconductors exhibit some properties of interest for high temperature sensing technologies, such as: high microstructure and chemical stability, relatively high electronic conductivity at high temperatures, and relative thermal expansion coefficient matching to refractory thermal protective insulation (such as high-zirconia and -alumina ceramics). In this work, n-type and p-type doped lanthanum chromites compositions were computationally modelled and prepared, and the electrical, thermoelectric, and thermomechanical properties were measured for the obtained material systems. A few compositions were then processed into thick film health and temperature sensors and tested at high temperatures. To establish relative stability under harsh environment conditions, post- mortem microstructure and chemical composition was characterized after extended and cycle testing at high temperatures.

20 FOSSIL-FUELED POWER PLANTS↗

Development of a reliable Potting process for Photoconductive Semiconductor Switches (PCSS)

Electrical potting is an important process to protect semiconductor devices from damaging external elements (mechanical stress, moisture, high voltage, etc.) and provides structural support for delicate devices for electrical connectivity to a larger platform. This internship will focus on the development of a universal potting jig for photoconductive semiconductor switches (PCSS). The goal is to design a reliable compression jig that is cross compatible with various PCSS designs that allow for easy potting of devices with a high dielectric breakdown strength material. The challenge with the current potting jig is that the design is only compatible with one style of PCSS and applies uneven pressure that can lead to leakage of potting material. Our approach is to move from a design that applies pressure by binder clip to utilizing a micrometer based compressing jig for a reliable packaging process that can pot a variety of devices without having to have a unique compressing jig for each of style of PCSS. Possible roadblocks with the new design include epoxy leakage into the optical path and misalignment of the electrode – metal contact bond.

42 ENGINEERING↗

Gallium Arsenide Semiconductor Opening Switches: Enabling Nanosecond High Powering Pulsed Systems

The goal of this work awas to investigate design manufacturing semiconductor opening switches (SOS) in both silicon and gallium arsenide (GaAs). Solid-state opening switches are critical components for pulsed power systems and applications in directed energy, dielectric wall accelerators, and novel semiconductor manufacturing techniques. Under this funding, we have developed silicon SOS designs that suppresses an unwanted prepulse, increases the peak output voltage by about 10 percent, and reduces the pulse rise time by ~ 4x compared with more conventional profiles. Through this effort we have improved device fabrication and bonding techniques. Additionally, work on this the GaAs opening switch has defined a unique application space that these devices are suited for. GaAs opening switches have short risetimes and pulse widths compared to silicon devices, however the short carrier lifetime of GaAs makes the circuit design more challenging than in silicon. For high PRF operation, the lifetime of the GaAs is an advantage compared to silicon. TCAD simulations of GaAs devices have been used to optimize a GaAs profile. Additionally, we have designed pulsers with sub 50ns reserve pump times and tested GaAs COTs PIN diodes in them.

42 ENGINEERING↗

Laser Terahertz Emission Microscope for Imaging Grain Heterogeneity: A Case Study of CH3NH3PbI3 Perovskite Semiconductors

Strong terahertz (THz) emission from the methylammonium lead iodide (MAPbI3) perovskite semiconductors has been observed following above-bandgap photoexcitation, yet local THz responses of crystalline microstructures are absent. We implement laser THz emission microscope (LTEM), yet-to-be applied to the perovskite semiconductors, as a novel and complementary tool to evaluate the electronic and grain heterogeneity of MAPbI3 thin films. Two MAPbI3 samples with different grain sizes are studied. Using this approach, we show that the one with a larger grain size gives more uniform THz radiation. More significant spatial THz intensity fluctuation is observed for the sample with a smaller grain size.

36 MATERIALS SCIENCE↗

Single-crystal semiconductor films grown on foreign substrates

Intermediate alloy formed between foreign substrates and semiconductor material enable the growth of single crystal semiconductor films on the alloy layer. The melted film must not ball up on the surface of the substrate and neither chemically react nor alloy with the intermediate alloy formed on the substrate.

Vohl, P.↗

Bilateral, Zero-Impedance Static Semiconductor Switch

Static semiconductor switching circuit eliminates the undesirable features of electromechanical relays and conventional semiconductor switching circuits. There is a net zero voltage drop at the terminals and thus a zero impedance for bilateral currents there.

Doughman, C. L.↗

Methods of measurement for semiconductor materials, process control, and devices

Significant accomplishments include development of a procedure to correct for the substantial differences of transistor delay time as measured with different instruments or with the same instrument at different frequencies; association of infrared response spectra of poor quality germanium gamma ray detectors with spectra of detectors fabricated from portions of a good crystal that had been degraded in known ways; and confirmation of the excellent quality and cosmetic appearance of ultrasonic bonds made with aluminum ribbon wire. Work is continuing on measurement of resistivity of semiconductor crystals; study of gold-doped silicon, development of the infrared response technique; evaluation of wire bonds and die attachment; and measurement of thermal properties of semiconductor devices, delay time and related carrier transport properties in junction devices, and noise properties of microwave diodes.

Bullis, W. M.↗

A thin film, high sensitivity, two terminal, semiconductor strain sensor.

A two terminal semiconductor strain sensor which makes use of an evaporated piezoelectric layer to modulate the forward current-voltage characteristics of a thin film diode is described. The physical mechanisms are discussed and compared to other types of semiconductor sensors. Application to the electromechanical design of ultraminiature pressure transducers is discussed.

Mallon, J. R.↗

Electromagnetic radiation screening of semiconductor devices for long life applications

A review is presented of the mechanism of interaction of electromagnetic radiation in various spectral ranges, with various semiconductor device defects. Previous work conducted in this area was analyzed as to its pertinence to the current problem. The task was studied of implementing electromagnetic screening methods in the wavelength region determined to be most effective. Both scanning and flooding type stimulation techniques are discussed. While the scanning technique offers a considerably higher yield of useful information, a preliminary investigation utilizing the flooding approach is first recommended because of the ease of implementation, lower cost and ability to provide go-no-go information in semiconductor screening.

Hall, T. C.↗

An impedance analysis of double-stream interaction in semiconductors

The electromagnetic waves propagating through a drifting semiconductor plasma are studied from a macroscopic point of view in terms of double-stream interaction. The possible existing waves (helicon waves, longitudinal waves, ordinary waves, and pseudolongitudinal waves) which depend upon the orientation of the dc external magnetic field are derived. A powerful impedance concept is introduced to investigate the wave behavior of longitudinal (space charge) waves or pseudolongitudinal waves in a semiconductor plasma. The impedances due to one- and two-carrier stream interactions were calculated theoretically.

Chen, P. W.↗

Semiconductor surface protection material

A method and a product for protecting semiconductor surfaces is disclosed. The protective coating material is prepared by heating a suitable protective resin with an organic solvent which is solid at room temperature and converting the resulting solution into sheets by a conventional casting operation. Pieces of such sheets of suitable shape and thickness are placed on the semiconductor areas to be coated and heat and vacuum are then applied to melt the sheet and to drive off the solvent and cure the resin. A uniform adherent coating, free of bubbles and other defects, is thus obtained exactly where it is desired.

Packard, R. D.↗

Optical investigations of noncrystalline semiconductors

Three areas of investigation into the properties of amorphous silicon and boron are reported: (1) optical properties of elemental amorphous semiconductors; (2) Mossbauer studies of disordered systems; and (3) theoretical aspects of disordered semiconductors.

Blum, N. A.↗

A 15% efficient antireflection-coated metal-oxide-semiconductor solar cell

A new effect is being developed which significantly improves the conversion efficiency of antireflection-coated metal-oxide-semiconductor (AMOS) solar cells. The effect, a marked increase in the open-circuit voltage, is produced by the addition of an oxide layer to the semiconductor. Cells using gold on n-type gallium arsenide have been made with efficiencies up to 15% in terrestrial sunlight. All processing steps are amenable to the use of low-cost polycrystalline films of GaAs in place of the single crystals now used.

Stirn, R. J.↗

Semiconductor electrolyte photovoltaic energy converter

Feasibility and practicality of a solar cell consisting of a semiconductor surface in contact with an electrolyte are evaluated. Basic components and processes are detailed for photovoltaic energy conversion at the surface of an n-type semiconductor in contact with an electrolyte which is oxidizing to conduction band electrons. Characteristics of single crystal CdS, GaAs, CdSe, CdTe and thin film CdS in contact with aqueous and methanol based electrolytes are studied and open circuit voltages are measured from Mott-Schottky plots and open circuit photo voltages. Quantum efficiencies for short circuit photo currents of a CdS crystal and a 20 micrometer film are shown together with electrical and photovoltaic properties. Highest photon irradiances are observed with the GaAs cell.

Anderson, W. W.↗

Space processing of crystalline materials: A study of known methods of electrical characterization of semiconductors

A literature survey is presented covering nondestructive methods of electrical characterization of semiconductors. A synopsis of each technique deals with the applicability of the techniques to various device parameters and to potential in-flight use before, during, and after growth experiments on space flights. It is concluded that the very recent surge in the commercial production of large scale integrated circuitry and other semiconductor arrays requiring uniformity on the scale of a few microns, involves nondestructive test procedures which could well be useful to NASA for in-flight use in space processing.

Castle, J. G.↗

The AMOS cell - An improved metal-semiconductor solar cell

A new fabrication process is being developed which significantly improves the efficiency of metal-semiconductor solar cells. The resultant effect, a marked increase in the open-circuit voltage, is produced by the addition of an interfacial layer oxide on the semiconductor. Cells using gold on n-type gallium arsenide have been made in small areas (0.17 sq cm) with conversion efficiencies of 15% in terrestrial sunlight.

Stirn, R. J.↗