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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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64 MeV proton irradiation was conducted on pixel technologies that span the range of commercially available electronic displays for crewed missions. Human-centric optical performance metrics are discussed and reported for assessment of pixel radiation susceptibilities.
Forecasting relativistic electron fluxes at geostationary Earth orbit (GEO) has been a long‐term goal of the scientific community, and significant advances have been made in the past, but the relation to the interior of the radiation belts, that is, to lower L‐shells, is still not clear. In this work we have identified 60 relativistic electron enhancement events at GEO to study the radial response of outer belt fluxes and the correlation between the fluxes at GEO and those at lower L‐shells. The enhancement events occurred between 1 October 2012 and 31 December 2017 and were identified using Geostationary Operational Environmental Satellite (GOES) 15 >2 MeV fluxes at GEO, which we have used to characterize the radial response of the radiation belt, by comparing to fluxes measured by the Van Allen probes Energetic Particle, Composition and Thermal Plasma Suite Relativistic Electron‐Proton Telescope (ECT‐REPT) between 2.5 5.0 and generally similar for L>4.5. Post‐enhancement maximum fluxes show a remarkable correlation for all L>4.0 although the magnitude of the pre‐existing fluxes on the outer belt plays a significant role and makes the ratio of pre‐enhancement to post‐enhancement fluxes less predictable in the region 4.0<L<4.5. For L<4 the fluxes are poorly correlated with geostationary orbit, but they also tend to be less variable. We have also examined SYM‐H, Kp, and AE indices and found that depending on their magnitude, the response of different parts of the outer belt can be better quantified.
64 MeV proton irradiation were conducted on pixel technologies that spans the range of commercially available electronic displays for crewed missions. Human-centric optical performance metrics and at-facility characterization techniques are discussed and reported for assessment of pixel radiation susceptibilities.
The HEAO 3 spacecraft's gamma-ray spectrometer has been used to obtain upper limits to the 511-keV electron-positron annihilation line flux from seven galaxies: M 81/M 82, NGC 4278, M 104, NGC 6500, NGC 2911, and NGC 262. These appear to contain scaled-up versions of the radio source in the galactic center, and their nonthermal activity appears to be confined to the central regions, implying that energetic particles produced in these nuclei do not escape into the low density regions of interstellar or intergalactic space. On the basis of the scaling law adopted, six of these seven galaxies should have been detected above the upper limits obtained for narrow 511 keV emission. Explanations are adduced which account for the scaling law's failure to predict the correct level of radiation annihilation.
Electron flux measurements by scintillation counters of the new artificial radiation belt
Calculation of radiation dose produced by high energy electrons on earth orbiting manned spacecraft
It is proposed that in loop coronal transients an erupting loop moves away from the solar surface, with a velocity exceeding the local Alfven speed, pushing against the overlying magnetic fields and driving a shock in the front of the moving part of the loop. Lower hybrid waves are excited at the shock front and propagate radially toward the center of the loop with phase velocity along the magnetic field that exceeds the thermal velocity. The lower hybrid waves stochastically accelerate the tail of the electron distribution inside the loop. The manner in which the accelerated electrons are trapped in the moving loop are discussed, and their radiation signature is estimated. It is suggested that plasma radiation can explain the power observed in stationary and moving type IV bursts.
The mobility of electrons in laser radiated DNA is closed to the energy transfer and energy migration of a biological molecule. Arrhenius has studied the conductivity of the electrons in a biological molecule. But his result is far from the experimental result and meanwhile the relation between some parameters in his theory and the micro-quantities in DNA is not very clear. In this paper, we propose a new phonon model of electron mobility in DNA and use Lippman-Schwinger equation and S-matrix theory to study the mobility of electrons in DNA crystal. The result is relatively close to the experiment result and some parameters in Arrhenius theory are explained in our work.
Radiation fields from energetic electron moving in helical orbit in magnetoactive plasma, using Maxwell equations
Here, in this work, we report a novel approach to reduce the channel resistance by inducing a phase transition behavior from 2H to 1T in a monolayer MoS 2 (1L-MoS 2 ) by a synchrotron X-ray monochromatic beam (mono-beam) radiation. The effects of the biphase structure by the mono-beam on the 1L-MoS2 film were investigated using Raman spectra, photoluminescence (PL) spectra, scanning tunneling microscopy, and scanning tunneling spectroscopy, respectively. Through material characterization, we identified that the lateral sliding of S-vacancies along the S-plane in the 1L-MoS 2 is the key reason for the origin of unidirectional phase transition. The precise phase engineering triggered by the mono-beam radiation process allows the realization of field-effect transistors (FET) with 2X improvement in mobility toward a high on/off ratio (~10 8 ) and a near-ideal subthreshold swing of ~88 mV per decade. The validity of the phase engineering could be further extended for its application as a memory device, exhibiting a gate tunable conduction modulation behavior and a high resistance ratio of ~10 2 at a gate bias of 5 V with endurance of ~100 cycles. Furthermore, an artificial neural network using the synaptic weight update with accuracy of ~93 % was achieved.
Proton irradiation damage on microelectronics - radiation effects
Process and radiation induced defects are characterized by a variety of electrical techniques, including capacitance-voltage measurements and charge pumping. Separation of defect type into stacking faults, displacement damage, oxide traps, interface states, etc. and their related causes are discussed. The defects are then related to effects on device parameters. Silicon MOS technology is emphasized. Several reviews of radiation effects and silicon processing exist.
Radiation fields produced by energetic electrons in helical orbit within magnetoactive plasma derived by solving Maxwell equations
Nuclear physics pertains to the understanding of the structure and dynamics of the nuclei of atoms, accounting for almost all of the visible matter in the universe. The future Electron-Ion Collider (EIC) will play a crucial role in discovering new laws of Nuclear physics. A pivotal aspect of the EIC is exceptional particle identification (PID). Identifying charged hadrons in their final state can be done with special types of Cherenkov Detectors. One type of detector utilizes the Detection of Internally Reflected Cherenkov radiation (DIRC) phenomena. Able to provide precise PID separation up to relatively high momenta, DIRC radiators, made of synthetic fused silica, produce Cherenkov radiation when hit by high energy electromagnetically charged particles. In this thesis we present details of the construction of a cosmic ray telescope (CRT) to utilize high energy muons from cosmic rays to test DIRC radiators. These types of radiators will be used for the high-performance DIRC (hpDIRC) to be used in the ePIC detector in the future EIC. We go into detail on the DIRC process and the individual pieces of hardware required to make the CRT. Lots of labor was used for certain parts of the CRT, specifically the construction of a dark box for the DIRC radiators. The CRT construction and implementation of all of its components are planned to be completed before 2025.
Emerging Electronics Technologies include: 1) Changes in the commercial semiconductor world; 2) Radiation Effects Sources (A sample test constraint); and 3) Challenges to Radiation Testing and Modeling: a) IC Attributes-Radiation Effects Implication b) Fault Isolation c) Scaled Geometry d) Speed e) Modeling Shortfall f) Knowledge Status
Inward radial diffusion of electrons of greater than 1.6 million electron volts in outer radiation zone
The response of coated thin polymer films to ultraviolet (UV), electron and proton radiation simultaneously has been evaluated, with selected measurements in situ. Exposure was intended to simulate the electron and proton radiation environment near the Earth-Sun Lagrangian points (LI and L2) for five years and approximately 1000 equivalent solar hours (ESH) UV. These orbital environments are relevant to several potential missions such as the Next Generation Space Telescope and Geomagnetic Storm Warning, both of which may use thin film based structures for a sunshade and solar sail, respectively. The thin film candidates (12.5 micrometers thick) consisted of commercially available materials (Kapton(R) E, HN, Upilex(R) S, CP-1, CP-2, TOR-RC, and TOR-LMBP) that were metalized on one side with vapor deposited aluminum. All of the films are aromatic polyimides, with the exception of TORLMBP, which is a copoly(arylene ether benzimidazole). The films were exposed as second surface mirrors and the effects of the exposure on solar absorptance, thermal emittance, and tensile properties were determined. The in situ changes in solar absorptance from Kapton(R) and Upilex(R) were less than 0. 1, whereas the solar absorptance of TOR and CP films increased by more than 0.3 without saturating. The thermal emittance measurements also showed that the Kapton(R) and Upilex(R) materials increased only 1-2%, but the remaining materials increased 5-8%. Based on tensile property measurements made in air following the test, the failure stress of every type of polymer film decreased as a result of irradiation. The polymers most stable in reflectance, namely Upilex(R) and Kapton(R), were also the strongest in tension before irradiation, and they retained the greatest percentage of tensile strength. The films less stable in reflectance were also weaker in tension, and lost more tensile strength as a result of irradiation. The apparent failure strain (as a percent of original gage length) of every type of polymer film except TOR-RC, decreased as a result of irradiation.
Electron & proton radiation effects on transmittance of glasses & adhesives